JPH05198768A - 半導体記憶装置およびその製造方法 - Google Patents

半導体記憶装置およびその製造方法

Info

Publication number
JPH05198768A
JPH05198768A JP4008617A JP861792A JPH05198768A JP H05198768 A JPH05198768 A JP H05198768A JP 4008617 A JP4008617 A JP 4008617A JP 861792 A JP861792 A JP 861792A JP H05198768 A JPH05198768 A JP H05198768A
Authority
JP
Japan
Prior art keywords
conductive layer
layer
capacitor
memory cell
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4008617A
Other languages
English (en)
Japanese (ja)
Inventor
Yasuo Nakatani
康雄 中谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4008617A priority Critical patent/JPH05198768A/ja
Priority to DE4238081A priority patent/DE4238081C2/de
Priority to KR1019930000377A priority patent/KR970007220B1/ko
Publication of JPH05198768A publication Critical patent/JPH05198768A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/043—Manufacture or treatment of capacitors having no potential barriers using patterning processes to form electrode extensions, e.g. etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP4008617A 1992-01-21 1992-01-21 半導体記憶装置およびその製造方法 Pending JPH05198768A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP4008617A JPH05198768A (ja) 1992-01-21 1992-01-21 半導体記憶装置およびその製造方法
DE4238081A DE4238081C2 (de) 1992-01-21 1992-11-11 Stapelkondensator und Verfahren zu dessen Herstellung
KR1019930000377A KR970007220B1 (ko) 1992-01-21 1993-01-13 적층형 콘덴서 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4008617A JPH05198768A (ja) 1992-01-21 1992-01-21 半導体記憶装置およびその製造方法

Publications (1)

Publication Number Publication Date
JPH05198768A true JPH05198768A (ja) 1993-08-06

Family

ID=11697912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4008617A Pending JPH05198768A (ja) 1992-01-21 1992-01-21 半導体記憶装置およびその製造方法

Country Status (3)

Country Link
JP (1) JPH05198768A (de)
KR (1) KR970007220B1 (de)
DE (1) DE4238081C2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19536528A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Integrierbarer Kondensator und Verfahren zu seiner Herstellung
EP0862207A1 (de) * 1997-02-27 1998-09-02 Siemens Aktiengesellschaft Verfahren zur Herstellung eines DRAM-Grabenkondensators
DE102005003164A1 (de) 2005-01-21 2006-07-27 Goldschmidt Gmbh Polyglycerinpartialester von Polyricinolsäure und mehrfunktionellen Carbonsäuren und deren Verwendung zur Herstellung von Emulsionen und Dispersionen
DE102005011785A1 (de) 2005-03-11 2006-09-21 Goldschmidt Gmbh Langzeitstabile kosmetische Emulsionen
EP2000124A1 (de) 2007-06-08 2008-12-10 Evonik Goldschmidt GmbH Kosmetische und pharmazeutische Öl-in-Wasser-Emulsionen mit einem Esterquat
DE102007040001A1 (de) 2007-08-23 2009-02-26 Evonik Goldschmidt Gmbh Neue zwitterionische Verbindungen enthaltende Formulierungen und deren Verwendung
DE102007041028A1 (de) 2007-08-29 2009-03-05 Evonik Goldschmidt Gmbh Verwendung estermodifizierter Organopolysiloxane zur Herstellung kosmetischer oder pharmazeutischer Kompositionen
DE102007049612A1 (de) 2007-10-17 2009-06-10 Evonik Goldschmidt Gmbh Bioaktive Zusammensetzung für kosmetische Anwendungen
DE102007055483A1 (de) 2007-11-21 2009-05-28 Evonik Goldschmidt Gmbh Kosmetische und dermatologische Formulierungen enthaltend Isononylbenzoat
EP2222715B1 (de) 2007-12-19 2019-07-24 Evonik Degussa GmbH Vernetzte hyaluronsäure in einer emulsion
DE102008022392A1 (de) 2008-05-06 2009-11-12 Evonik Goldschmidt Gmbh Kosmetika enthaltend Zistrosenkraut-Extrakte
DE102008001786A1 (de) 2008-05-15 2009-11-26 Evonik Goldschmidt Gmbh Verwendung organomodifizierter Siloxanblockcopolymere als Pflegewirkstoff zur Pflege von menschlichen oder tierischen Körperteilen
DE102008001788A1 (de) 2008-05-15 2009-11-26 Evonik Goldschmidt Gmbh Verwendung organomodifizierter Siloxanblockcopolymere zur Herstellung kosmetischer oder pharmazeutischer Zusammensetzungen
DE102008041020A1 (de) 2008-08-06 2010-02-11 Evonik Goldschmidt Gmbh Verwendung von Polysiloxanen mit quaternären Ammoniumgruppen zum Schutz von tierischen oder menschlichen Haaren vor Hitzeschädigung
DE102008042149A1 (de) 2008-09-17 2010-03-18 Evonik Goldschmidt Gmbh Kosmetische und dermatologische Formulierungen enthaltend Phenoxyalkylester
DE102008052341A1 (de) 2008-10-20 2010-04-22 Evonik Goldschmidt Gmbh Verwendung von Pflegeformulierungen enthaltend einen Extrakt aus Mangostan
DE102009002371A1 (de) 2009-04-15 2010-10-21 Evonik Goldschmidt Gmbh Verfahren zur Herstellung von geruchlosen Polyetheralkoholen mittels DMC-Katalysatoren und deren Verwendung in kosmetischen und/oder dermatologischen Zubereitungen
EP2540170A1 (de) 2011-06-29 2013-01-02 Evonik Degussa GmbH Dermatologisch wirksamer Hefeextrakt

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63143840A (ja) * 1986-12-08 1988-06-16 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH0210762A (ja) * 1988-06-28 1990-01-16 Mitsubishi Electric Corp キャパシタ
JPH0316258A (ja) * 1989-06-14 1991-01-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0295709B1 (de) * 1987-06-17 1998-03-11 Fujitsu Limited Verfahren zum Herstellen einer dynamischen Speicherzelle mit wahlfreiem Zugriff
JPH01120050A (ja) * 1987-11-02 1989-05-12 Hitachi Ltd 半導体記憶装置
US5504704A (en) * 1990-10-29 1996-04-02 Nec Corporation Semiconductor memory device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63143840A (ja) * 1986-12-08 1988-06-16 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPH0210762A (ja) * 1988-06-28 1990-01-16 Mitsubishi Electric Corp キャパシタ
JPH0316258A (ja) * 1989-06-14 1991-01-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
DE4238081C2 (de) 1995-05-24
KR970007220B1 (ko) 1997-05-07
DE4238081A1 (en) 1993-07-22
KR930017186A (ko) 1993-08-30

Similar Documents

Publication Publication Date Title
JP2504606B2 (ja) 半導体記憶装置およびその製造方法
JPH05198768A (ja) 半導体記憶装置およびその製造方法
JPH0629482A (ja) 二重のセル・プレートを備えた複数ポリ・スペーサ・スタック型キャパシタ
JPH02312269A (ja) 半導体記憶装置およびその製造方法
JPH0724283B2 (ja) Ｄｒａｍセルとｄｒａｍセルの積層型キャパシタ及びその製造方法
US6072241A (en) Semiconductor device with self-aligned contact and its manufacture
US5498561A (en) Method of fabricating memory cell for semiconductor integrated circuit
JP2614699B2 (ja) スタックキャパシタ製造方法
JP3288805B2 (ja) キャパシタの製造方法
JP2002009261A (ja) Ｄｒａｍキャパシタの製造方法
JP2001257320A (ja) 半導体記憶装置及びその製造方法
JP3200974B2 (ja) 半導体記憶装置の製造方法
JPH03205866A (ja) メモリ装置
JP2969764B2 (ja) 半導体装置及びその製造方法
JP3028774B2 (ja) 容量電極形成方法
JP3137401B2 (ja) 半導体記憶装置およびその製造方法
JPH05175452A (ja) 半導体記憶装置およびその製造方法
JP2753092B2 (ja) 半導体記憶装置の製造方法
JPH0661361A (ja) 半導体装置およびその製造方法
JP3204215B2 (ja) 半導体装置およびその製造方法
US5824593A (en) Method for making a capacitor on a semiconductor device
JPS63318152A (ja) ダイナミツクランダムアクセスメモリ
JPH06338592A (ja) 半導体記憶装置及びその製造方法
KR960006721B1 (ko) 스택 캐패시터 제조방법
KR100250683B1 (ko) 반도체 메모리소자의 캐패시터 제조방법

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 19980428