JPH0519957Y2 - - Google Patents
Info
- Publication number
- JPH0519957Y2 JPH0519957Y2 JP1986156002U JP15600286U JPH0519957Y2 JP H0519957 Y2 JPH0519957 Y2 JP H0519957Y2 JP 1986156002 U JP1986156002 U JP 1986156002U JP 15600286 U JP15600286 U JP 15600286U JP H0519957 Y2 JPH0519957 Y2 JP H0519957Y2
- Authority
- JP
- Japan
- Prior art keywords
- resin body
- hard resin
- electrode
- bowl
- header
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
本考案は、半導体装置、特に電気的特性に悪影
響を与える有害物質の内部への侵入を阻止する能
力の大きい半導体装置に関連する。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a semiconductor device, and particularly to a semiconductor device having a high ability to prevent harmful substances that adversely affect electrical characteristics from entering the inside of the device.
従来の技術
例えば、自動車に使用される交流発電機（オル
タネータ）の出力を整流する素子として、軟質樹
脂、即ちラバー状樹脂で半導体チツプを封止した
樹脂封止ダイオードが公知である。この樹脂封止
ダイオードを第６図について説明する。2. Description of the Related Art For example, a resin-sealed diode in which a semiconductor chip is sealed with a soft resin, that is, a rubber-like resin, is known as an element for rectifying the output of an alternator used in an automobile. This resin-sealed diode will be explained with reference to FIG.
ダイオード１は、平坦なベース部２ａ及びベー
ス部２ａから屈曲して伸び出す側部２ｂを有して
凹部２ｃの形成された椀形の電極２と、フランジ
状のヘツダー３ａ及びヘツダー３ａより小さい横
断面を有するリード部３ａからなるリード電極３
と、ベース部２ａとヘツダー３ａとの間に接続さ
れた半導体チツプ４と、半導体チツプ４を封止す
るために凹部２ｃに形成された軟質樹脂体５とを
備えている。半導体チツプ４の上面４ａ及び下面
４ｂは、それぞれ半田６によりヘツダー３ａの下
面３a1及びベース部２ａの上面２a1に接着されて
いる。 The diode 1 includes a bowl-shaped electrode 2 having a flat base part 2a and a side part 2b bent and extending from the base part 2a and a recess 2c formed therein, a flange-shaped header 3a, and a cross section smaller than the header 3a. Lead electrode 3 consisting of a lead portion 3a having a surface
, a semiconductor chip 4 connected between a base portion 2a and a header 3a, and a soft resin body 5 formed in a recess 2c for sealing the semiconductor chip 4. The upper surface 4a and lower surface 4b of the semiconductor chip 4 are bonded to the lower surface 3a1 of the header 3a and the upper surface 2a1 of the base portion 2a by solder 6, respectively.
椀形の電極２のベース部２ａは、約１mmの厚さ
を有する。また、ベース部２ａから屈曲して伸び
出す側部２ｂは、直径約9.5mm、高さ約2.3mm及び
厚さ約0.5mmの環状である。リード電極３のヘツ
ダー３ａは、約５mmの直径と約0.5mmの厚さを有
する。ヘツダー３ａから上方に伸びるリード部３
ａは、約1.5mmの直径で約18mmの長さを有する。
リード部３ａにはＵ字形のベンド部３b1が形成さ
れる。しかし、Ｕ字形のベンド部３b1を設けず
に、リード部３ｂを直線状に形成してもよい。 The base portion 2a of the bowl-shaped electrode 2 has a thickness of about 1 mm. Further, the side portion 2b that bends and extends from the base portion 2a has an annular shape with a diameter of about 9.5 mm, a height of about 2.3 mm, and a thickness of about 0.5 mm. The header 3a of the lead electrode 3 has a diameter of about 5 mm and a thickness of about 0.5 mm. Lead portion 3 extending upward from header 3a
a has a diameter of about 1.5 mm and a length of about 18 mm.
A U-shaped bend portion 3b1 is formed in the lead portion 3a. However, the lead portion 3b may be formed linearly without providing the U-shaped bend portion 3b1 .
半導体チツプ４の両主面４ａ，４ｂにはニツケ
ル電極（図示せず）が形成されている。半田６
は、鉛（Pb）95重量％、錫（Sn）５重量％のPb
−Sn系合金である。椀形の電極２及びリード電
極３は、ニツケルが被覆された銅材である。軟質
樹脂体５は、シリコンラバーである。軟質樹脂体
５は、椀形の電極２の凹部２ｃから少し盛り上が
るように形成され、半導体チツプ４の側面４ｃは
もちろん、ヘツダー３ａに続くリード部３ｂの下
部及び椀形の電極２の凹部２ｃ側を被覆する。ま
た、軟質樹脂体５は、椀形の電極２に半導体チツ
プ４とリード電極３を固着した後に椀形の電極２
の凹部２ｃに粘液状の樹脂形成溶液を注ぎ、熱処
理を施して形成される。 Nickel electrodes (not shown) are formed on both main surfaces 4a and 4b of the semiconductor chip 4. solder 6
is Pb with 95% lead (Pb) and 5% tin (Sn) by weight.
-It is a Sn-based alloy. The bowl-shaped electrode 2 and the lead electrode 3 are made of copper coated with nickel. The soft resin body 5 is silicon rubber. The soft resin body 5 is formed to be slightly raised from the recess 2c of the bowl-shaped electrode 2, and extends not only to the side surface 4c of the semiconductor chip 4 but also to the lower part of the lead portion 3b following the header 3a and the recess 2c side of the bowl-shaped electrode 2. Cover. Further, the soft resin body 5 is attached to the bowl-shaped electrode 2 after the semiconductor chip 4 and the lead electrode 3 are fixed to the bowl-shaped electrode 2.
It is formed by pouring a slimy resin forming solution into the recess 2c and subjecting it to heat treatment.
考案が解決しようとする問題点
ところで、軟質樹脂体５の椀形の電極２及びリ
ード電極３との結合は、封止用に多用されている
エポキシ樹脂等の硬質樹脂に比べれば、酸やアル
カリの存在によつて分断されやすい。しかも上記
熱処理工程では、収縮を伴う軟質樹脂体５の固化
の際に、矢印Ａ及びＢで示す接着部にストレスが
集中する。このため、これらの接着部において軟
質樹脂体５がリード電極３のリード部３ｂ又は椀
形の電極２の上部２b2の表面から剥離しやすい状
態にある。従つて、厳しい環境の下でダイオード
１を長期間使用すると、上記接着部を起点として
リード電極３のリード部３ｂ又は椀形の電極２の
側部２ｂの表面に沿つて軟質樹脂体５の剥離が進
行し、最終的にはヘツダー３ａの上面３a2及び側
面３a3又は椀形の電極２の側部２ｂの内面２b1及
びベース部２ａの上面２a1を経て、半導体チツプ
４の側面４ｃにまで軟質樹脂体５の剥離が達す
る。このように剥離が進行した状態では、ダイオ
オード１は、軟質樹脂体５の剥離部から剥離に伴
つて半導体チツプ４の側面４ｃに侵入する水分や
イオン性不純物等の有害物質により、逆方向電流
が増加してシヨート状になるなどの特性不良とな
る。Problems to be Solved by the Invention By the way, the connection between the soft resin body 5 and the bowl-shaped electrode 2 and the lead electrode 3 is more difficult to bond with acids and alkalis than with hard resins such as epoxy resins, which are often used for sealing. It is easy to be divided by the existence of Moreover, in the heat treatment step, stress is concentrated on the bonded portions indicated by arrows A and B when the soft resin body 5 is solidified with shrinkage. Therefore, the soft resin body 5 is easily peeled off from the surface of the lead part 3b of the lead electrode 3 or the upper part 2b2 of the bowl-shaped electrode 2 at these bonded parts. Therefore, if the diode 1 is used for a long period of time in a harsh environment, the soft resin body 5 may peel off along the surface of the lead part 3b of the lead electrode 3 or the side part 2b of the bowl-shaped electrode 2 starting from the adhesive part. progresses, and finally passes through the upper surface 3a 2 and side surface 3a 3 of the header 3a or the inner surface 2b 1 of the side portion 2b of the bowl-shaped electrode 2 and the upper surface 2a 1 of the base portion 2a, and finally reaches the side surface 4c of the semiconductor chip 4. The peeling of the soft resin body 5 reaches up to . In a state where the peeling has progressed in this way, the diode 1 has a reverse current caused by harmful substances such as moisture and ionic impurities that enter the side surface 4c of the semiconductor chip 4 from the peeled part of the soft resin body 5 as the chip peels off. This increases, resulting in poor characteristics such as a shot-like appearance.
そこで、本考案は、上記欠点を解消して、軟質
樹脂により封止されかつ電気的特性に悪影響を与
える有害物質の内部への侵入を阻止する能力の大
きい半導体装置を提供することを目的とする。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to eliminate the above-mentioned drawbacks and provide a semiconductor device that is sealed with a soft resin and has a high ability to prevent harmful substances that adversely affect electrical characteristics from entering the semiconductor device. .
問題点を解決するための手段
本考案による半導体装置は、凹部を有する支持
電極と、リード電極と、支持電極の凹部の底部と
リード電極との間に接続された半導体チツプと、
支持電極の凹部に充填されかつ半導体チツプを封
止する軟質樹脂体とを備えている。支持電極の側
部に外側硬質樹脂体が固着され、外側硬質樹脂体
とは分離した内側硬質樹脂体がリード電極のヘツ
ダーの上面に固着されている。外側硬質樹脂体及
び内側硬質樹脂体は軟質樹脂体により包囲されて
いる。Means for Solving the Problems A semiconductor device according to the present invention includes a support electrode having a recess, a lead electrode, and a semiconductor chip connected between the bottom of the recess of the support electrode and the lead electrode.
A soft resin body is provided which fills the recess of the support electrode and seals the semiconductor chip. An outer hard resin body is fixed to the side of the support electrode, and an inner hard resin body separate from the outer hard resin body is fixed to the upper surface of the header of the lead electrode. The outer hard resin body and the inner hard resin body are surrounded by a soft resin body.
作 用
硬質樹脂体と支持電極又はリード電極との結合
は、酸やアルカリの存在下においても、軟質樹脂
体のそれと比べると分断され難い。このため、厳
しい環境の下で半導体装置を使用したとき、支持
電極またはリード電極の表面に沿う樹脂体の剥離
が硬質樹脂体の部分で進行し難くなり、有害物質
の半導体チツプ表面への到達を阻止する能力が強
化される。支持電極の側部に外側硬質樹脂体が固
着され、内側硬質樹脂体がリード電極のヘツダー
の上面に外側硬質樹脂体とは分離して固着されて
いる。このため、金属と樹脂との間に熱膨張係数
の相違があつても、分離された外側硬質樹脂と内
側硬質樹脂とが金属との間で大きな熱応力を発生
しない。仮に、このような熱応力が発生しても、
外側硬質樹脂と内側硬質樹脂とを包囲する軟質樹
脂体により緩和される。Effect The bond between the hard resin body and the support electrode or lead electrode is less likely to be broken compared to that of a soft resin body even in the presence of acid or alkali. For this reason, when a semiconductor device is used in a harsh environment, peeling of the resin body along the surface of the support electrode or lead electrode becomes difficult to progress at the hard resin body part, which prevents harmful substances from reaching the semiconductor chip surface. The ability to stop will be strengthened. An outer hard resin body is fixed to the side of the support electrode, and an inner hard resin body is fixed to the upper surface of the header of the lead electrode separately from the outer hard resin body. Therefore, even if there is a difference in thermal expansion coefficient between the metal and the resin, large thermal stress will not be generated between the separated outer hard resin and inner hard resin and the metal. Even if such thermal stress occurs,
It is relieved by the soft resin body surrounding the outer hard resin and the inner hard resin.
実施例
以下、本考案の実施例を第１図〜第５図につい
て説明する。これらの図面では、第６図に示す部
分と同一の個所には同一符号を付し、説明を省略
する。Embodiment Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 5. In these drawings, the same parts as those shown in FIG. 6 are designated by the same reference numerals, and their explanation will be omitted.
第１図に示すように、本考案の半導体装置は、
椀形の電極２及びリード電極３と軟質樹脂体５と
の間介在する硬質樹脂体７を有する。硬質樹脂体
７は、エポキシ系樹脂やポリイミド系樹脂（ポリ
イミド樹脂に限らず、ポリイミド変性シリコン樹
脂などを含む）が適する。ここでは半導体装置の
封止用に多用されているエポキシ樹脂を使用し
た。硬質樹脂体７は、椀形の電極２の側部２ｂの
上部２b2に接着した外側硬質樹脂体７ａと、リー
ド電極３のヘツダー３ａの上部３a2に接着した内
側硬質樹脂体７ｂとを有する。硬質樹脂体７の外
側硬質樹脂体７ａと内側硬質樹脂体７ｂは、椀形
の電極２の凹部２ｃの上方から見て凹部２ｃの一
部に形成されている。側部２ｂの上部２b2には、
凹部２ｃ側で低くなる段差部２ｄを形成してい
る。また、この実施例では、シリコンラバーで形
成される軟質樹脂体５は、下部軟質樹脂体５ａと
上部軟質樹脂体５ｂで構成される。下部軟質樹脂
体５ａは、硬質樹脂体７の接着工程によつて半導
体チツプ４が劣化することを防止する。上部軟質
樹脂体５ｂは、下部軟質樹脂体５ａの上に、内側
硬質樹脂体７ｂを完全に被覆しかつ外側硬質樹脂
体７ａの頂部に至るまで封止するように形成され
る。 As shown in FIG. 1, the semiconductor device of the present invention is
It has a hard resin body 7 interposed between the bowl-shaped electrode 2 and lead electrode 3 and the soft resin body 5. The hard resin body 7 is suitably made of epoxy resin or polyimide resin (including not only polyimide resin but also polyimide-modified silicone resin). Here, epoxy resin, which is often used for sealing semiconductor devices, was used. The hard resin body 7 has an outer hard resin body 7a adhered to the upper part 2b2 of the side part 2b of the bowl-shaped electrode 2, and an inner hard resin body 7b adhered to the upper part 3a2 of the header 3a of the lead electrode 3. . The outer hard resin body 7a and the inner hard resin body 7b of the hard resin body 7 are formed in a part of the recess 2c of the bowl-shaped electrode 2 when viewed from above. In the upper part 2b 2 of the side part 2b,
A stepped portion 2d is formed which becomes lower on the side of the recessed portion 2c. Furthermore, in this embodiment, the soft resin body 5 made of silicone rubber is composed of a lower soft resin body 5a and an upper soft resin body 5b. The lower soft resin body 5a prevents the semiconductor chip 4 from deteriorating due to the bonding process of the hard resin body 7. The upper soft resin body 5b is formed on the lower soft resin body 5a so as to completely cover the inner hard resin body 7b and seal up to the top of the outer hard resin body 7a.
次に、第１図に示すダイオードの製造法を説明
する。 Next, a method of manufacturing the diode shown in FIG. 1 will be explained.
まず、椀形の電極２、半導体チツプ４及びリー
ド電極３を半田６により図示のように接着して、
未封止のダイオードを作る。次に、半導体チツプ
４の側面４ｃのエツチング、洗浄及び乾燥を行つ
た後、保護樹脂として下部軟質樹脂体５ａとなる
シリコンラバーの樹脂形成用粘液を半導体チツプ
４の側面４ｃを被覆するように椀形の電極２の凹
部２ｃに注入し、この粘液を加熱により固化させ
る。その後、外側硬質樹脂体７ａと内側硬質樹脂
体７ｂとなるエポキシ樹脂の樹脂形成用粘液を椀
形の電極２の側部２ｂの上部２b2及びヘツダー３
ａの上面３a2に塗布して、これらの粘液を加熱に
より固化させる。最後に、椀形の電極２の凹部２
ｃに上部軟質樹脂体５ｂとなるシリコンラバーの
樹脂形成用粘液を注入し、この粘液を加熱により
固化させる。 First, the bowl-shaped electrode 2, semiconductor chip 4, and lead electrode 3 are bonded with solder 6 as shown in the figure.
Make an unsealed diode. Next, after etching, washing and drying the side surface 4c of the semiconductor chip 4, a resin forming slime of silicone rubber which will become the lower soft resin body 5a as a protective resin is poured into a bowl so as to cover the side surface 4c of the semiconductor chip 4. The mucus is injected into the recess 2c of the shaped electrode 2, and the mucus is solidified by heating. After that, the resin forming slime of the epoxy resin that will become the outer hard resin body 7a and the inner hard resin body 7b is applied to the upper part 2b 2 of the side part 2b of the bowl-shaped electrode 2 and the header 3.
Apply to the upper surface 3a 2 of a and solidify the mucus by heating. Finally, the recess 2 of the bowl-shaped electrode 2
A resin-forming liquid of silicone rubber that will become the upper soft resin body 5b is injected into c, and this sticky liquid is solidified by heating.
本考案による半導体装置の耐環境性能を調査す
るため、エポキシ樹脂を椀形の電極２の側部２ｂ
の上部２b2とヘツダー３ａの上面３a2に付着し、
シリコンラバーで封止した本考案によるダイオー
ド及び従来のダイオードを作成し、耐環境性能を
調べるための厳しい加速寿命試験である電解試験
を行つた。即ち、各ダイオードに7.5Vの逆方向
電圧を印加した状態で、室温中に放置された10％
の塩水に10秒間浸漬した。10秒経過後に塩水から
取出し、逆方向電圧の印加状態のまま、各ダイオ
ードを30分間室温の大気中に放置した。これらの
過程を１サイクルとして10サイクル単位で50サイ
クルまでこの作業を行つた。各10サイクル終了毎
に各ダイオードを洗浄及び乾燥して逆方向電流を
測定した。この測定では、逆方向電流が規格値内
であれば良品とし、規格値外であれば不良品とし
て各ダイオードを選別した。その結果、本考案に
よるダイオードは良好な結果を示した。 In order to investigate the environmental resistance performance of the semiconductor device according to the present invention, epoxy resin was applied to the side 2b of the bowl-shaped electrode 2.
attached to the upper part 2b 2 of the header 3a and the upper surface 3a 2 of the header 3a,
A diode according to the present invention and a conventional diode sealed with silicone rubber were fabricated and subjected to an electrolytic test, which is a severe accelerated life test to examine environmental resistance performance. That is, 10% of the diode was left at room temperature with a reverse voltage of 7.5V applied to each diode.
immersed in salt water for 10 seconds. After 10 seconds, each diode was removed from the salt water and left in the air at room temperature for 30 minutes while a reverse voltage was applied. This process was carried out in units of 10 cycles up to 50 cycles, with these processes as one cycle. After each 10 cycles, each diode was cleaned and dried and the reverse current was measured. In this measurement, each diode was selected as a good product if the reverse current was within the standard value, and as a defective product if it was outside the standard value. As a result, the diode according to the present invention showed good results.
この電解試験では、椀形の電極２とリード電極
３のうち、（＋）極となる方には塩水の電気分解
により塩酸（HCl）が発生し、（−）極となる方
には同じくカセイソーダ（NaOH）が発生する。
これらの酸又はアルカリを含む電解液は、電極と
樹脂体の結合を分断し、電極からの樹脂体の剥離
を引き起こす。剥離を生じた部分には電解液が浸
透し、更に剥離を引き起こし、この繰返しにより
樹脂体の剥離が進行する。従つて、この電解試験
は、樹脂体（シリコンラバー及びエポキシ樹脂）
と椀形の電極２及びリード電極３との結合の強さ
が不良率の高低に顕著に現れてくる試験である。
なお、この試験を通して、シリコンラバー（軟質
樹脂体５）とエポキシ樹脂（硬質樹脂体７）の剥
離が問題になることはなかつた。 In this electrolytic test, between the bowl-shaped electrode 2 and the lead electrode 3, hydrochloric acid (HCl) is generated by electrolysis of salt water at the (+) electrode, and caustic soda is generated at the (-) electrode. (NaOH) is generated.
The electrolytic solution containing these acids or alkalis breaks the bond between the electrode and the resin body, causing the resin body to separate from the electrode. The electrolytic solution penetrates into the part where the peeling has occurred, causing further peeling, and by repeating this process, the peeling of the resin body progresses. Therefore, this electrolytic test is applicable to resin bodies (silicon rubber and epoxy resin).
In this test, the strength of the bond between the bowl-shaped electrode 2 and the lead electrode 3 is clearly reflected in the defective rate.
Note that throughout this test, peeling between the silicone rubber (soft resin body 5) and the epoxy resin (hard resin body 7) did not become a problem.
本考案では、硬質樹脂体７の具体的な形状は、
第２図〜第４図に例示するように種々の変更が可
能である。即ち、第２図Ａに示すように、椀形の
電極２の側部２ｂの上部２b2に側部２ｂに沿つて
環状に形成した溝部２ｅに外側硬質樹脂体７ａを
付着することができる。溝部２ｅを複数本形成し
てもよい。Ｂは、椀形の電極２の側部２ｂの上部
２b2に側部２ｂに沿つて環状に形成した突起２ｆ
を形成し、この突起２ｆの周囲に外側硬質樹脂体
７ａを形成した例を示す。 In the present invention, the specific shape of the hard resin body 7 is as follows:
Various modifications are possible as illustrated in FIGS. 2 to 4. That is, as shown in FIG. 2A, the outer hard resin body 7a can be attached to a groove 2e formed in an annular shape along the side part 2b at the upper part 2b2 of the side part 2b of the bowl-shaped electrode 2. A plurality of grooves 2e may be formed. B is a projection 2f formed in an annular shape along the side part 2b on the upper part 2b2 of the side part 2b of the bowl-shaped electrode 2.
An example is shown in which an outer hard resin body 7a is formed around the protrusion 2f.
第３図は、ガラス繊維の不織布に硬質樹脂の樹
脂形成用溶液を含浸・乾燥させたものを椀形の電
極２の側部２ｂの内面２b1に当てて、加熱して溶
融・固化させた例を示す。 Figure 3 shows a glass fiber nonwoven fabric impregnated with a hard resin resin forming solution and dried, applied to the inner surface 2b 1 of the side 2b of the bowl-shaped electrode 2, and heated to melt and solidify it. Give an example.
第４図Ａは、ヘツダー３ａの上面３a2にリード
部３ｂを環状に包囲する溝部３ｃを設け、この溝
部３ｃに沿つて環状に内側硬質樹脂体７ｂを形成
した例を示す。Ｂは、ヘツダー３ａの上面３a2に
リード部３ｂを環状に包囲する突起３ｄを設け、
この突起３ｄに囲まれた領域に内側硬質樹脂体７
ｂを形成した例を示す。Ｃは、ガラス繊維の不織
布に硬質樹脂の樹脂形成用溶液を含浸・乾燥させ
たものをヘツダー３ａの上面３a2に当てて、加熱
して溶融固化させ内側硬質樹脂体７ｂを形成した
例を示す。 FIG. 4A shows an example in which a groove 3c is provided on the upper surface 3a2 of the header 3a to annularly surround the lead portion 3b, and an inner hard resin body 7b is annularly formed along the groove 3c. B is provided with a protrusion 3d on the upper surface 3a2 of the header 3a, which surrounds the lead part 3b in an annular shape,
The inner hard resin body 7 is located in the area surrounded by this protrusion 3d.
An example of forming b is shown below. C shows an example in which a glass fiber nonwoven fabric impregnated with a hard resin resin forming solution and dried is applied to the upper surface 3a2 of the header 3a and heated to melt and solidify to form the inner hard resin body 7b. .
更に、第５図に示すように、椀形の電極２のベ
ース部２ａ又はリード電極３のヘツダー３ａに、
それぞれ半導体チツプ４に接着される突出部２a2
及び３a3を設けた半導体装置も本考案の技術的範
囲に包含される。また、上記実施例では、椀形の
電極２の側部２ｂの上部２b2に接着した外側硬質
樹脂体７ａと、リード電極３のヘツダー３ａの上
面３a2に接着した内側硬質樹脂体７ｂとを有する
硬質樹脂体７を示したが、外側硬質樹脂体７ａ及
び内側硬質樹脂体７ｂの両方を分離状態で形成し
た場合に十分な改善効果が認められる。 Furthermore, as shown in FIG. 5, on the base part 2a of the bowl-shaped electrode 2 or the header 3a of the lead electrode 3,
Projections 2a 2 each bonded to the semiconductor chip 4
and 3a3 are also included within the technical scope of the present invention. Further, in the above embodiment, the outer hard resin body 7a is adhered to the upper part 2b2 of the side part 2b of the bowl-shaped electrode 2, and the inner hard resin body 7b is adhered to the upper surface 3a2 of the header 3a of the lead electrode 3. Although the hard resin body 7 is shown, a sufficient improvement effect is recognized when both the outer hard resin body 7a and the inner hard resin body 7b are formed in a separated state.
なお、外側硬質樹脂体７ａと内側硬質樹脂体７
ｂの両方を形成する代りに、全面的に硬質樹脂体
で封止する構造も考えられる。しかし、自動車用
ダイオードのように熱処理や熱サイクルを厳しく
受ける半導体装置では、金属と樹脂の熱膨張係数
の違いによつて封止した硬質樹脂が椀形の電極２
及びリード電極３から剥離してしまう。したがつ
て、外側硬質樹脂体７ａと内側硬質樹脂体７ｂ
は、完全に分離させて形成すべきである。 Note that the outer hard resin body 7a and the inner hard resin body 7
Instead of forming both parts b, a structure in which the entire surface is sealed with a hard resin body can also be considered. However, in semiconductor devices such as automotive diodes that are subjected to severe heat treatment and thermal cycles, the bowl-shaped electrode 2 is sealed with hard resin due to the difference in thermal expansion coefficient between metal and resin.
And it peels off from the lead electrode 3. Therefore, the outer hard resin body 7a and the inner hard resin body 7b
should be formed completely separate.
考案の効果
上記の通り、本考案による半導体装置では、封
止樹脂体と電極との剥離が進行し難く、有害物質
の侵入を阻止する能力が強化されている。従つ
て、本考案によれば、耐環境性能の向上した半導
体装置を提供することができる。このように、本
考案は半導体装置の信頼性向上に大きく寄与でき
るものである。Effects of the Invention As described above, in the semiconductor device according to the present invention, separation between the sealing resin body and the electrode is difficult to progress, and the ability to prevent the intrusion of harmful substances is enhanced. Therefore, according to the present invention, it is possible to provide a semiconductor device with improved environmental resistance. In this way, the present invention can greatly contribute to improving the reliability of semiconductor devices.
第１図は本考案による半導体装置の断面図を示
す。第２図〜第４図は本考案の変形例を説明する
ためのもので、第２図Ａ，Ｂは椀形の電極２の側
部２ｂの上部２b2に外側硬質樹脂体を形成した例
を示す部分断面図、第３図は椀形の電極２の側部
２ｂの内側２b1に外側硬質樹脂体７ａを形成した
部分断面図、第４図Ａ，Ｂ，Ｃはヘツダー部３ａ
の上面３a2に内側硬質樹脂体７ｂを形成した部分
断面図を示す。第５図は本考案にる半導体装置の
変形例を示す断面図である。第６図は従来の半導
体装置の断面図を示す。
２……椀形の電極、２ａ……ベース部、２ｂ…
…側部、２ｃ……凹部、３……リード電極、３ａ
……ヘツダー、３ｂ……リード部、４……半導体
チツプ、５……軟質樹脂体、５ａ……下部軟質樹
脂体、５ｂ……上部軟質樹脂体、６……半田、７
……硬質樹脂体、７ａ……外側硬質樹脂体、７ｂ
……内側硬質樹脂体。
FIG. 1 shows a cross-sectional view of a semiconductor device according to the present invention. Figures 2 to 4 are for explaining modified examples of the present invention, and Figures 2A and 2B are examples in which an outer hard resin body is formed on the upper part 2b 2 of the side part 2b of the bowl-shaped electrode 2. 3 is a partial sectional view showing the outer hard resin body 7a formed on the inner side 2b1 of the side portion 2b of the bowl-shaped electrode 2, and FIG. 4A, B, and C are the header portions 3a.
A partial cross-sectional view is shown in which an inner hard resin body 7b is formed on the upper surface 3a2 . FIG. 5 is a sectional view showing a modification of the semiconductor device according to the present invention. FIG. 6 shows a cross-sectional view of a conventional semiconductor device. 2... Bowl-shaped electrode, 2a... Base part, 2b...
...Side part, 2c...Recess, 3...Lead electrode, 3a
...Header, 3b...Lead part, 4...Semiconductor chip, 5...Soft resin body, 5a...Lower soft resin body, 5b...Upper soft resin body, 6...Solder, 7
...Hard resin body, 7a...Outer hard resin body, 7b
...Inner hard resin body.
Claims (1)
記支持電極の凹部の底部と前記リード電極との
間に接続された半導体チツプと、前記凹部に充
填されかつ前記半導体チツプを封止する軟質樹
脂体とを備えた半導体装置において、 前記支持電極の側部に外側硬質樹脂体が固着
され、前記リード電極のヘツダーの上面には前
記外側硬質樹脂体とは分離した内側硬質樹脂体
が固着され、前記外側硬質樹脂体及び内側硬質
樹脂体は前記軟質樹脂体により包囲されている
ことを特徴とする半導体装置。 (2) 前記軟質樹脂体はシリコンラバーであり、前
記硬質樹脂体はエポキシ樹脂である実用新案登
録請求の範囲第(1)項記載の半導体装置。[Claims for Utility Model Registration] (1) A support electrode having a recess, a lead electrode, a semiconductor chip connected between the bottom of the recess of the support electrode and the lead electrode, and a semiconductor chip filled in the recess. In the semiconductor device comprising a soft resin body for sealing the semiconductor chip, an outer hard resin body is fixed to a side of the support electrode, and an outer hard resin body is attached to the upper surface of the header of the lead electrode, separate from the outer hard resin body. A semiconductor device characterized in that an inner hard resin body is fixed to the outer hard resin body, and the outer hard resin body and the inner hard resin body are surrounded by the soft resin body. (2) The semiconductor device according to claim (1), wherein the soft resin body is silicone rubber, and the hard resin body is epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986156002U JPH0519957Y2 (en) | 1986-10-14 | 1986-10-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986156002U JPH0519957Y2 (en) | 1986-10-14 | 1986-10-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6364049U JPS6364049U (en) | 1988-04-27 |
| JPH0519957Y2 true JPH0519957Y2 (en) | 1993-05-25 |
Family
ID=31077212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986156002U Expired - Lifetime JPH0519957Y2 (en) | 1986-10-14 | 1986-10-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0519957Y2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2726515B2 (en) * | 1989-09-22 | 1998-03-11 | 電気化学工業株式会社 | Semiconductor tower mounting circuit board and method of manufacturing the same |
| JP2008235674A (en) * | 2007-03-22 | 2008-10-02 | Toyota Motor Corp | Power module and vehicle inverter |
| JP2009277876A (en) * | 2008-05-14 | 2009-11-26 | Sanken Electric Co Ltd | Semiconductor device |
| JP5822656B2 (en) * | 2011-10-31 | 2015-11-24 | 株式会社 日立パワーデバイス | Semiconductor device and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS615812U (en) * | 1984-05-31 | 1986-01-14 | 日本メクトロン株式会社 | conveyor belt |
-
1986
- 1986-10-14 JP JP1986156002U patent/JPH0519957Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6364049U (en) | 1988-04-27 |
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