JPH05200575A - Laser beam machine - Google Patents
Laser beam machineInfo
- Publication number
- JPH05200575A JPH05200575A JP4014511A JP1451192A JPH05200575A JP H05200575 A JPH05200575 A JP H05200575A JP 4014511 A JP4014511 A JP 4014511A JP 1451192 A JP1451192 A JP 1451192A JP H05200575 A JPH05200575 A JP H05200575A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- height
- laser beam
- laser
- height direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 239000004642 Polyimide Substances 0.000 abstract description 7
- 229920001721 polyimide Polymers 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 3
- 238000003754 machining Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000945 filler Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Laser Beam Processing (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はレーザ加工装置に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser processing apparatus.
【０００２】[0002]
【従来の技術】従来、レーザ加工装置はウェハチャック
上のウェハ表面の高さを検出する機構によりウェハ表面
の高さを検出して、レーザ加工できるレーザ光の集光す
る位置にウェハ表面の高さを合わせて使用していた。こ
の時ウェハの水平方向の位置決めをする機構により高精
度にウェハの水平方向の位置決めを行い、レーザ光をウ
ェハに照射し加工する。2. Description of the Related Art Conventionally, a laser processing apparatus detects the height of the wafer surface by a mechanism for detecting the height of the wafer surface on a wafer chuck, and the height of the wafer surface is adjusted to a position where a laser beam that can be laser processed is focused. I used it together. At this time, the wafer is positioned in the horizontal direction with high accuracy by a mechanism for positioning the wafer in the horizontal direction, and the wafer is irradiated with laser light for processing.
【０００３】しかしながら、半導体集積回路は年々微細
加工されてきており、コストの面から樹脂封止を用いる
ケースが増加してきた。封止樹脂はその中に含まれてい
るフィラーが半導体集積回路チップに突き刺さり、配線
の断線が問題となる。However, semiconductor integrated circuits have been finely processed year by year, and the number of cases using resin sealing has increased from the viewpoint of cost. The filler contained in the encapsulating resin pierces the semiconductor integrated circuit chip, which causes a problem of disconnection of wiring.
【０００４】これを防止するために半導体集積回路チッ
プの表面にポリイミド等の有機絶縁膜が設けられてい
る。In order to prevent this, an organic insulating film such as polyimide is provided on the surface of the semiconductor integrated circuit chip.
【０００５】従来の技術について図面を用いて説明す
る。図３は半導体集積回路のレーザ加工するヒューズ部
の周辺部を含んだ断面図である。A conventional technique will be described with reference to the drawings. FIG. 3 is a cross-sectional view including a peripheral portion of a fuse portion to be laser-processed in a semiconductor integrated circuit.
【０００６】半導体基板１、例えばシリコン上部に酸化
膜２が形成されている。酸化膜２上にヒューズ３が形成
されている。さらにヒューズ３の上部に層間絶縁膜４が
形成されている。また、層間絶縁膜４の上にパッシベー
ション膜５が形成されている。ヒューズ３の切断部の上
部のパッシベーション膜５に開口部６が設けられてい
る。さらにパッシベーション膜５の上にポリイミド等の
有機絶縁膜７が形成されている。有機絶縁膜７には開口
部８が設けてある。An oxide film 2 is formed on a semiconductor substrate 1, for example, silicon. A fuse 3 is formed on the oxide film 2. Further, an interlayer insulating film 4 is formed on the fuse 3. Further, a passivation film 5 is formed on the interlayer insulating film 4. An opening 6 is provided in the passivation film 5 above the cut portion of the fuse 3. Further, an organic insulating film 7 such as polyimide is formed on the passivation film 5. An opening 8 is provided in the organic insulating film 7.
【０００７】従来のレーザ加工装置は、有機絶縁膜７の
表面でウェハの高さを検出し、検出した高さにレーザ光
を集光して加工する。The conventional laser processing apparatus detects the height of the wafer on the surface of the organic insulating film 7 and condenses the laser light at the detected height for processing.
【０００８】[0008]
【発明が解決しようとする課題】上記従来の方法では、
有機絶縁膜７の厚さは約３〜８μｍあり、ヒューズ３の
上面から有機絶縁膜７の表面までの距離ｔは約５〜１０
μｍになる。SUMMARY OF THE INVENTION In the above conventional method,
The thickness of the organic insulating film 7 is about 3-8 μm, and the distance t from the upper surface of the fuse 3 to the surface of the organic insulating film 7 is about 5-10.
μm.
【０００９】集光していたレーザ光はヒューズ３の上面
でレーザ光が広がってしまう。このため微細なレーザ光
にすることができず、微細なレーザ加工ができないとい
う問題があった。The laser light that has been focused spreads on the upper surface of the fuse 3. For this reason, there is a problem that it is not possible to make a fine laser beam, and a fine laser processing cannot be performed.
【００１０】本発明は、上記問題を解決するもので、微
細なレーザ加工を可能とし、ヒューズのレイアウトの微
細化を可能として半導体集積回路の高集積化を実現でき
るレーザ加工装置を提供することを目的とするものであ
る。The present invention solves the above problems and provides a laser processing apparatus which enables fine laser processing, enables finer layout of fuses, and realizes higher integration of semiconductor integrated circuits. It is intended.
【００１１】[0011]
【課題を解決するための手段】上記問題を解決するた
め、本発明のレーザ加工装置はウェハの高さ方向のオフ
セットを入力する入力機構と、ウェハ表面の高さを検出
する検出機構と、前記オフセット分だけ前記ウェハの高
さを移動させる移動機構と、前記ウェハの水平方向の位
置決めをする位置決め機構と、前記ウェハにレーザ光を
照射する加工機構とを備えている。In order to solve the above problems, the laser processing apparatus of the present invention comprises an input mechanism for inputting an offset in the height direction of a wafer, a detection mechanism for detecting the height of the wafer surface, and A moving mechanism for moving the height of the wafer by an offset amount, a positioning mechanism for horizontally positioning the wafer, and a processing mechanism for irradiating the wafer with laser light are provided.
【００１２】[0012]
【作用】本発明によれば、ウェハの高さ方向のオフセッ
トを任意に入力することができ、ウェハ表面の高さの検
出した位置とレーザ加工する位置との差が有っても、ウ
ェハの高さ方向のオフセット分ウェハの高さを移動させ
ることが可能となり、ヒューズの上面部にレーザ光を集
光することができる。よって、ポリイミド等の有機絶縁
膜が半導体集積回路のチップの上に形成されても、微細
なレーザ加工が可能となる。According to the present invention, an offset in the height direction of the wafer can be arbitrarily input, and even if there is a difference between the position where the height of the wafer surface is detected and the position where laser processing is performed, The height of the wafer can be moved by the offset in the height direction, and the laser light can be focused on the upper surface of the fuse. Therefore, even if the organic insulating film such as polyimide is formed on the chip of the semiconductor integrated circuit, fine laser processing can be performed.
【００１３】[0013]
【実施例】本発明のレーザ加工装置の一実施例を図１及
び図２を用いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the laser processing apparatus of the present invention will be described with reference to FIGS.
【００１４】図１は、本発明のレーザ加工装置の一実施
例を説明するための機構ブロック図である。FIG. 1 is a mechanism block diagram for explaining one embodiment of the laser processing apparatus of the present invention.
【００１５】図において、１は入力機構、２は検出機
構、３は移動機構、４は位置決め機構、５は加工機構、
６はレーザ、７はウェハ、８はステージである。In the figure, 1 is an input mechanism, 2 is a detection mechanism, 3 is a moving mechanism, 4 is a positioning mechanism, 5 is a processing mechanism,
6 is a laser, 7 is a wafer, and 8 is a stage.
【００１６】まずはじめに、ステージ８上のウェハ７の
高さ方向のオフセットを入力する入力機構１があり、オ
フセット量をメモリーする。First, there is an input mechanism 1 for inputting an offset in the height direction of the wafer 7 on the stage 8, and the offset amount is stored in memory.
【００１７】次に、ウェハ７表面の高さを検出する検出
機構２があり、次に高さのオフセット分ウェハ７の高さ
を移動させる移動機構３がある。これにより、レーザ６
の光の集光する高さ方向の位置とレーザ加工する物質の
高さ方向の位置を相対的に調整される。Next, there is a detecting mechanism 2 for detecting the height of the surface of the wafer 7, and then there is a moving mechanism 3 for moving the height of the wafer 7 by an offset of the height. This allows the laser 6
The position in the height direction where the light is condensed and the position in the height direction of the substance to be laser processed are relatively adjusted.
【００１８】次に、高精度にウェハ７の水平方向の位置
決めする位置決め機構４があり、レーザ加工位置にウェ
ハ７を移動する。Next, there is a positioning mechanism 4 for positioning the wafer 7 in the horizontal direction with high accuracy, and the wafer 7 is moved to the laser processing position.
【００１９】次にレーザ６の光をウェハ７に照射し加工
する加工機構５により本発明のレーザ加工装置はなって
いる。Next, the laser processing apparatus of the present invention comprises the processing mechanism 5 for irradiating the wafer 7 with the light of the laser 6 and processing.
【００２０】図２は、本発明のレーザ加工装置を用いて
半導体集積回路を製造する方法について説明するための
工程フロー図である。FIG. 2 is a process flow chart for explaining a method for manufacturing a semiconductor integrated circuit using the laser processing apparatus of the present invention.
【００２１】まずはじめに、入力機構１により、ウェハ
７の高さ方向のオフセット量を入力する。First, the offset amount of the wafer 7 in the height direction is input by the input mechanism 1.
【００２２】このオフセット量は、半導体集積回路のポ
リイミド等の有機絶縁膜の表面からヒューズの表面まで
の距離をあらかじめ測定しておき、レーザ加工が最適に
成るように求めておいた量である。This offset amount is an amount which is obtained in advance by measuring the distance from the surface of the organic insulating film such as polyimide of the semiconductor integrated circuit to the surface of the fuse so as to optimize the laser processing.
【００２３】次に、検出機構２によってウェハ７表面の
高さを検出する。次に高さのオフセット分ウェハ７の高
さ分だけ移動機構３によって移動させる。これにより、
レーザ６の光の集光する高さ方向の位置とレーザ加工す
る物質の高さ方向の位置を相対的に調整される。Next, the detection mechanism 2 detects the height of the surface of the wafer 7. Next, the moving mechanism 3 moves the wafer 7 by the height offset. This allows
The position in the height direction where the light of the laser 6 is focused and the position in the height direction of the substance to be laser processed are relatively adjusted.
【００２４】次に、すでに入力されたレーザ加工する位
置データに基づき高精度にウェハ７の水平方向の位置決
めがなされるように位置決め機構４がある。Next, there is the positioning mechanism 4 so that the wafer 7 can be positioned in the horizontal direction with high accuracy based on the already input position data for laser processing.
【００２５】これによってレーザ加工位置にウェハ７を
移動する。次に加工機構５によってレーザ６の光をウェ
ハ７に照射し加工する。As a result, the wafer 7 is moved to the laser processing position. Next, the processing mechanism 5 irradiates the wafer 7 with the light of the laser 6 for processing.
【００２６】本発明によれば、ウェハ７の高さ方向のオ
フセットを任意に入力することができ、ウェハ７表面の
高さの検出した位置とレーザ加工する位置との差が有っ
ても、ウェハ７の高さ方向のオフセット分ウェハ７の高
さを移動させることが可能となり、ヒューズの上面部に
レーザ６の光を集光することができる。よって、ポリイ
ミド等の有機絶縁膜が半導体集積回路のチップの上に形
成されても、微細なレーザ加工が可能となる。According to the present invention, an offset in the height direction of the wafer 7 can be arbitrarily input, and even if there is a difference between the position where the height of the surface of the wafer 7 is detected and the laser processing position, The height of the wafer 7 can be moved by an offset in the height direction of the wafer 7, and the light of the laser 6 can be focused on the upper surface of the fuse. Therefore, even if the organic insulating film such as polyimide is formed on the chip of the semiconductor integrated circuit, fine laser processing can be performed.
【００２７】[0027]
【発明の効果】以上のように、本発明のレーザ加工装置
によれば、ウェハ表面の高さの検出した位置とレーザ加
工する位置との差が有っても、ウェハの高さ方向のオフ
セット分ウェハの高さを移動させることが可能となり、
ヒューズの上面部にレーザ光を集光することができる。
よって、ポリイミド等の有機絶縁膜が半導体集積回路の
チップの上に形成されても、微細なレーザ加工が可能と
なる。As described above, according to the laser processing apparatus of the present invention, even if there is a difference between the position where the height of the wafer surface is detected and the position where the laser processing is performed, the offset in the height direction of the wafer is obtained. It becomes possible to move the height of the wafer,
Laser light can be focused on the upper surface of the fuse.
Therefore, even if the organic insulating film such as polyimide is formed on the chip of the semiconductor integrated circuit, fine laser processing can be performed.
【図１】本発明の一実施例を説明するためのレーザ加工
装置の機構ブロック図FIG. 1 is a mechanical block diagram of a laser processing apparatus for explaining an embodiment of the present invention.
【図２】本発明のレーザ加工装置で半導体装置を製造す
る方法の工程フロー図FIG. 2 is a process flow chart of a method for manufacturing a semiconductor device with the laser processing apparatus of the present invention.
【図３】従来の半導体集積回路のレーザ加工する部分の
周辺部を含んだ断面図FIG. 3 is a cross-sectional view including a peripheral portion of a portion to be laser processed of a conventional semiconductor integrated circuit.
１ 入力機構 ２ 検出機構 ３ 移動機構 ４ 位置決め機構 ５ 加工機構 1 Input mechanism 2 Detection mechanism 3 Moving mechanism 4 Positioning mechanism 5 Processing mechanism
Claims (1)
ェハの高さ方向のオフセットを入力する入力機構と、ウ
ェハ表面の高さを検出する検出機構と、前記オフセット
分だけ前記ウェハの高さを移動させる移動機構と、前記
ウェハの水平方向の位置決めをする位置決め機構と、前
記ウェハにレーザ光を照射する加工機構とを備えたこと
を特徴とするレーザ加工装置。1. A wafer fixed to a stage, an input mechanism for inputting an offset in the height direction of the wafer, a detection mechanism for detecting the height of the wafer surface, and a height of the wafer for the offset. A laser processing apparatus comprising: a moving mechanism for moving the wafer; a positioning mechanism for horizontally positioning the wafer; and a processing mechanism for irradiating the wafer with laser light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4014511A JPH05200575A (en) | 1992-01-30 | 1992-01-30 | Laser beam machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4014511A JPH05200575A (en) | 1992-01-30 | 1992-01-30 | Laser beam machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05200575A true JPH05200575A (en) | 1993-08-10 |
Family
ID=11863105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4014511A Pending JPH05200575A (en) | 1992-01-30 | 1992-01-30 | Laser beam machine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05200575A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003533876A (en) * | 2000-05-16 | 2003-11-11 | ジェネラル スキャニング インコーポレイテッド | Method and system for precisely positioning the waist of a material processing laser beam for processing microstructures in a laser processing site |
| JP2008068312A (en) * | 2006-09-15 | 2008-03-27 | Keyence Corp | Laser processing apparatus, height offset adjustment method in three-dimensional laser processing, and laser processing apparatus control program |
| US7767928B2 (en) * | 2001-09-05 | 2010-08-03 | Lasertec Gmbh | Depth measurement and depth control or automatic depth control for a hollow to be produced by a laser processing device |
-
1992
- 1992-01-30 JP JP4014511A patent/JPH05200575A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003533876A (en) * | 2000-05-16 | 2003-11-11 | ジェネラル スキャニング インコーポレイテッド | Method and system for precisely positioning the waist of a material processing laser beam for processing microstructures in a laser processing site |
| US7767928B2 (en) * | 2001-09-05 | 2010-08-03 | Lasertec Gmbh | Depth measurement and depth control or automatic depth control for a hollow to be produced by a laser processing device |
| JP2008068312A (en) * | 2006-09-15 | 2008-03-27 | Keyence Corp | Laser processing apparatus, height offset adjustment method in three-dimensional laser processing, and laser processing apparatus control program |
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