JPH0520301U - Variable resistor - Google Patents
Variable resistorInfo
- Publication number
- JPH0520301U JPH0520301U JP6616891U JP6616891U JPH0520301U JP H0520301 U JPH0520301 U JP H0520301U JP 6616891 U JP6616891 U JP 6616891U JP 6616891 U JP6616891 U JP 6616891U JP H0520301 U JPH0520301 U JP H0520301U
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- layer
- strip
- shaped resistor
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Landscapes
- Adjustable Resistors (AREA)
Abstract
(57)【要約】
【目的】 馬蹄形の抵抗体の内周部分への電流集中を解
消する。
【構成】 馬蹄形の抵抗体を均一な厚みの同心の複数の
帯状抵抗体層２０ａ〜２０ｆで構成し、これら帯状抵抗
体層の幅を外周ほど大として各帯状抵抗体層の抵抗値を
ほぼ等しくする。さらに、各帯状抵抗体層２０ａ〜２０
ｆの間に熱伝導性の良い絶縁層２１を介在させる。
(57) [Summary] [Purpose] To eliminate current concentration in the inner circumference of the horseshoe-shaped resistor. A horseshoe-shaped resistor is composed of a plurality of concentric strip-shaped resistor layers 20a to 20f having a uniform thickness, and the width of these strip-shaped resistor layers is made larger toward the outer circumference so that the resistance values of the strip-shaped resistor layers are substantially equal. To do. Furthermore, each strip-shaped resistor layer 20a-20
An insulating layer 21 having good thermal conductivity is interposed between f.
Description
【０００１】[0001]
この考案は可変抵抗器に関し、特に絶縁基体に馬蹄形の抵抗体が配置された可 変抵抗器に関する。 The present invention relates to a variable resistor, and more particularly to a variable resistor in which a horseshoe-shaped resistor is arranged on an insulating base.
【０００２】[0002]
図５は従来のこの種の可変抵抗器の平面図であり、図６はそのＡ−Ａ断面図で ある。円形の絶縁基体１の一面１ａに例えばカーボンと樹脂との混合材よりなる 抵抗ペーストを塗布して馬蹄形の抵抗体層２が形成される。この抵抗体層２の両 端には例えば銀ペーストなどの導電ペーストを塗布して電極３、４が形成されて いる。 FIG. 5 is a plan view of a conventional variable resistor of this type, and FIG. 6 is a sectional view taken along line AA of FIG. A horseshoe-shaped resistor layer 2 is formed by applying a resistance paste made of, for example, a mixture of carbon and resin to one surface 1a of the circular insulating substrate 1. Electrodes 3 and 4 are formed on both ends of the resistor layer 2 by applying a conductive paste such as silver paste.
【０００３】 さらに、絶縁基体１の一面１ａ上には、抵抗体層２の内側に、抵抗体層２と間 隙を保って円形の導電体層５が形成されている。馬蹄形の抵抗体層２の開口部、 即ち電極３と４との間には導電体層５に接続される電極６が形成されている。こ れら導電体層５および電極６は電極３、４と同様に導電ペーストを塗布して形成 される。Further, on the one surface 1 a of the insulating substrate 1, a circular conductor layer 5 is formed inside the resistor layer 2 with a space kept from the resistor layer 2. An electrode 6 connected to the conductor layer 5 is formed between the openings of the horseshoe-shaped resistor layer 2, that is, between the electrodes 3 and 4. The conductor layer 5 and the electrode 6 are formed by applying a conductive paste like the electrodes 3 and 4.
【０００４】 摺動子７は例えば金属ブラシなどの摺動接点８が接点支持部９に取り付けられ てなり、その接点支持部９の一端は、抵抗体層２の中心において絶縁基体１に回 転自在に挿通保持された回動軸１１に取り付けられる。回動軸１１の回転により 摺動接点８が抵抗体層２および導電体層５上を摺動する。摺動接点８により抵抗 体層２と導電体層５とが短絡される。The slider 7 has a sliding contact 8 such as a metal brush attached to a contact supporting portion 9, and one end of the contact supporting portion 9 rotates to the insulating substrate 1 at the center of the resistor layer 2. It is attached to the rotary shaft 11 that is freely inserted and held. The rotation of the rotary shaft 11 causes the sliding contact 8 to slide on the resistor layer 2 and the conductor layer 5. The sliding contact 8 short-circuits the resistor layer 2 and the conductor layer 5.
【０００５】 上記の構成において、電極３と４との間には抵抗体層２全体による一定の抵抗 値が得られるとともに、電極３と６との間あるいは電極４と６との間には摺動子 ７の摺動接点８の位置に対応した抵抗値が得られる。In the above structure, a constant resistance value is obtained between the electrodes 3 and 4 due to the entire resistance layer 2, and a gap between the electrodes 3 and 6 or between the electrodes 4 and 6 is obtained. A resistance value corresponding to the position of the sliding contact 8 of the pendulum 7 can be obtained.
【０００６】[0006]
上記の可変抵抗器における抵抗値Ｒは、抵抗体層２の断面積をＳ、平均長さを Ｌ、比抵抗をρとすると、Ｒ＝ρＬ／Ｓで与えられる。ところが、従来の抵抗体 層２は図６に示すように均一な厚さに形成されており、また抵抗体層２の外周長 さは内周長さよりも長いため、外周部分の方が内周部分よりも高抵抗となる。こ のため、電流が内周部分に集中する現象が発生し、発熱や周囲温度による抵抗値 変化が大きいという問題点があった。 The resistance value R in the above variable resistor is given by R = ρL / S, where S is the cross-sectional area of the resistor layer 2, L is the average length, and ρ is the specific resistance. However, the conventional resistor layer 2 is formed to have a uniform thickness as shown in FIG. 6, and the outer peripheral length of the resistor layer 2 is longer than the inner peripheral length. It has a higher resistance than the part. For this reason, there is a problem in that the current concentrates on the inner peripheral portion, causing large changes in resistance value due to heat generation and ambient temperature.
【０００７】 この考案の目的は抵抗体層の内周部分に電流集中が発生しない可変抵抗器を提 供することにある。An object of the present invention is to provide a variable resistor in which current concentration does not occur in the inner peripheral portion of the resistor layer.
【０００８】[0008]
この考案は、馬蹄形の抵抗体を均一な厚みの同心の複数の帯状抵抗体層で構成 し、これら帯状抵抗体層は外周ほど幅を大とし、各帯状抵抗体層の間に熱伝導性 の良い絶縁層を介在させることにより、可変抵抗器を構成したものである。 In this invention, a horseshoe-shaped resistor is composed of a plurality of concentric strip-shaped resistor layers of uniform thickness, and these strip-shaped resistor layers have a wider width toward the outer periphery, and a thermal conductive layer is formed between the strip-shaped resistor layers. The variable resistor is configured by interposing a good insulating layer.
【０００９】[0009]
上記のように構成されたこの考案の可変抵抗器によれば、各帯状抵抗体層はそ れぞれ独立した抵抗体として作用し、かつそれぞれの抵抗値はほぼ等しくなる。 従って、各帯状抵抗体層に流れる電流はほぼ等しくなり、従来のような抵抗体の 内周部分への電流集中もなく、抵抗体全体として理想的な電流分布となる。この ため、電流集中に起因する発熱は解消され、かつ各帯状抵抗体層の間には熱伝導 性の良い絶縁層を介在させているため、抵抗体の温度上昇は低減し、周囲温度に よる抵抗値変化も小さくなる。 According to the variable resistor of the present invention constructed as described above, each strip-shaped resistor layer acts as an independent resistor, and the respective resistance values become substantially equal. Therefore, the currents flowing through the respective strip-shaped resistor layers become almost equal, and there is no current concentration in the inner peripheral portion of the resistor as in the conventional case, and the resistor has an ideal current distribution as a whole. For this reason, heat generation due to current concentration is eliminated, and since an insulating layer with good thermal conductivity is interposed between each strip resistor layer, the temperature rise of the resistor is reduced, and The change in resistance is also small.
【００１０】[0010]
この考案の実施例を図面を参照して説明する。 図１はこの考案による可変抵抗器の第１の実施例を示す平面図であり、図２は そのＢ−Ｂ断面図である。図において、図５、６と同一部分には同一符号を付し ている。図５、６の従来の可変抵抗器との相違点は、馬蹄形の抵抗体を複数の帯 状抵抗体層２０ａ、２０ｂ、２０ｃ、２０ｄ、２０ｅ、２０ｆで構成しているこ とである。各帯状抵抗体層２０ａ〜２０ｆは均一な厚みで、その幅方向を軸心と 平行とし、同心状とされ、また外周の帯状抵抗体層ほど幅が大とされている。即 ち、外周の帯状抵抗体層２０ａの幅Ｗ1 と内周の帯状抵抗体層２０ｆの幅Ｗ2 と は、それら帯状抵抗体層２０ａ、２０ｆの長さＬ1 、Ｌ2 の比によって決められ 、Ｗ2 ／Ｗ1 ＝Ｌ2 ／Ｌ1 となるように設定されている。An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view showing a first embodiment of a variable resistor according to the present invention, and FIG. 2 is a B-B sectional view thereof. In the figure, the same parts as those in FIGS. 5 and 6 are designated by the same reference numerals. 5 and 6 is different from the conventional variable resistor in that a horseshoe-shaped resistor is composed of a plurality of strip-shaped resistor layers 20a, 20b, 20c, 20d, 20e and 20f. Each of the strip-shaped resistor layers 20a to 20f has a uniform thickness, is concentric with the width direction parallel to the axis, and has a larger width in the outer peripheral strip-shaped resistor layers. Immediate Chi, the width W 2 of the inner periphery of the belt-shaped resistive layer 20f and the width W 1 of the belt-shaped resistive layer 20a of the outer periphery, determined by the ratio of the lengths L 1, L 2 thereof band resistor layer 20a, 20f Therefore, W 2 / W 1 = L 2 / L 1 is set.
【００１１】 各帯状抵抗体層２０ａ〜２０ｆの間には絶縁層２１が介在されている。この実 施例においては、絶縁層２１は絶縁基体１に一体形成されている。つまり、絶縁 基体１の一面１ａには帯状抵抗体層２０ａ〜２０ｆの形成に必要な複数の溝が形 成され、これらの溝に抵抗ペーストが埋め込まれることにより、帯状抵抗体層２ ０ａ〜２０ｆが形成され、それらの間の絶縁基体１の層が絶縁層２１となる。こ のような絶縁基体１は熱伝導性が良い無機質、例えばＳｉＯ2 、Ａｌ2 Ｏ3 、窒 化ホウ素などを材料として焼結により形成される。An insulating layer 21 is interposed between the strip resistor layers 20a to 20f. In this embodiment, the insulating layer 21 is formed integrally with the insulating base 1. That is, a plurality of grooves necessary for forming the band-shaped resistor layers 20a to 20f are formed on the one surface 1a of the insulating substrate 1, and the resistance paste is embedded in these grooves to form the band-shaped resistor layers 20a to 20f. Are formed, and the layer of the insulating substrate 1 between them becomes the insulating layer 21. The insulating substrate 1 as described above is formed by sintering using an inorganic material having a high thermal conductivity, such as SiO 2 , Al 2 O 3 , or boron nitride.
【００１２】 上記の構成によれば、各帯状抵抗体層２０ａ〜２０ｆの抵抗値はほぼ等しくな り、電流集中がなくなり、局部的な発熱が解消される。 図３はこの考案の第２の実施例における抵抗体の構造を説明するための断面原 理図である。この実施例においては、絶縁層２１の先端は抵抗体層２２で覆われ ており、絶縁層２１が露出しない構造とされている。抵抗体層２２をカーボンと 樹脂とよりなる抵抗ペーストの塗布により形成することにより、摩擦係数を小さ くすることができる。従って、この実施例では、摺動子の良好な摺動が得られ、 可変抵抗器の操作性が向上する。According to the above configuration, the resistance values of the strip-shaped resistor layers 20a to 20f become substantially equal, current concentration is eliminated, and local heat generation is eliminated. FIG. 3 is a cross-sectional principle view for explaining the structure of the resistor body according to the second embodiment of the present invention. In this embodiment, the tip of the insulating layer 21 is covered with the resistor layer 22 so that the insulating layer 21 is not exposed. By forming the resistor layer 22 by applying a resistor paste made of carbon and resin, the friction coefficient can be reduced. Therefore, in this embodiment, good sliding of the slider is obtained and the operability of the variable resistor is improved.
【００１３】 図４はこの考案の第３の実施例における抵抗体の構造を説明するための断面原 理図である。この実施例においては各帯状抵抗体層２０ａ〜２０ｆは図４に示し た断面において絶縁基体１の一面１ａ上における軸心Ｃを通る直線を対称軸とす る左右対称の台形とされ、かつそれら台形の左右の稜が軸心Ｃを通る直線上にそ れぞれ整列されている構造となっている。FIG. 4 is a cross-sectional principle view for explaining the structure of the resistor body according to the third embodiment of the present invention. In this embodiment, each of the strip resistor layers 20a to 20f has a symmetrical trapezoidal shape with the straight line passing through the axis C on the one surface 1a of the insulating substrate 1 as the axis of symmetry in the cross section shown in FIG. The left and right edges of the trapezoid are aligned on a straight line passing through the axis C, respectively.
【００１４】[0014]
この考案によれば、抵抗体を構成する各帯状抵抗体層の抵抗値はほぼ等しくな るため、抵抗体の内周部分への電流集中はなくなる。このため、電流集中に起因 する発熱は解消され、さらに各帯状抵抗体層の間には熱伝導性の良い絶縁層を介 在させているため、抵抗体の温度上昇は低減し、周囲温度による抵抗値変化も小 さくなる。 According to this invention, the resistance values of the strip-shaped resistor layers forming the resistor are substantially equal to each other, so that current concentration on the inner peripheral portion of the resistor is eliminated. For this reason, heat generation due to current concentration is eliminated, and since an insulating layer with good thermal conductivity is interposed between each strip-shaped resistor layer, the temperature rise of the resistor is reduced and it is The change in resistance is also small.
【図１】この考案による可変抵抗器の第１の実施例を示
す平面図。FIG. 1 is a plan view showing a first embodiment of a variable resistor according to the present invention.
【図２】図１のＢ−Ｂ断面図。FIG. 2 is a sectional view taken along line BB of FIG.
【図３】この考案の第２の実施例における抵抗体の構造
を説明するための断面原理図。FIG. 3 is a sectional principle view for explaining a structure of a resistor body according to a second embodiment of the present invention.
【図４】この考案の第３の実施例における抵抗体の構造
を説明するための断面原理図。FIG. 4 is a sectional principle view for explaining a structure of a resistor body according to a third embodiment of the present invention.
【図５】従来の可変抵抗器を示す平面図。FIG. 5 is a plan view showing a conventional variable resistor.
【図６】図５のＡ−Ａ断面図。6 is a cross-sectional view taken along the line AA of FIG.
１ 絶縁基体 ２ 抵抗体層 ５ 導電体層 ７ 摺動子 ８ 摺動接点 ２０ａ、２０ｂ、２０ｃ、２０ｄ、２０ｅ、２０ｆ
帯状抵抗体層 ２１ 絶縁層1 Insulating Substrate 2 Resistor Layer 5 Conductor Layer 7 Slider 8 Sliding Contact 20a, 20b, 20c, 20d, 20e, 20f
Band-shaped resistor layer 21 Insulation layer
Claims (1)
いて、上記抵抗体は均一な厚みの同心の複数の帯状抵抗
体層からなり、これら帯状抵抗体層は外周ほど幅が大と
されており、上記各帯状抵抗体層の間に熱伝導性の良い
絶縁層が介在されていることを特徴とする可変抵抗器。1. A variable resistor having a horseshoe-shaped resistor, wherein the resistor is composed of a plurality of concentric band-shaped resistor layers having a uniform thickness, and these band-shaped resistor layers are wider toward the outer periphery. A variable resistor characterized in that an insulating layer having good thermal conductivity is interposed between the respective strip resistor layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6616891U JPH0520301U (en) | 1991-08-21 | 1991-08-21 | Variable resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6616891U JPH0520301U (en) | 1991-08-21 | 1991-08-21 | Variable resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0520301U true JPH0520301U (en) | 1993-03-12 |
Family
ID=13308057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6616891U Pending JPH0520301U (en) | 1991-08-21 | 1991-08-21 | Variable resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0520301U (en) |
-
1991
- 1991-08-21 JP JP6616891U patent/JPH0520301U/en active Pending
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