JPH0522376B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma vapor phase reaction apparatus and a plasma vapor phase reaction method used for forming films, particularly semiconductor films, etc.

[Conventional technology]

As a conventionally known structure of a plasma vapor phase reactor, one in which a substrate is arranged parallel to one electrode surface of a parallel plate type electrode is known.

In this case, the electric field (generally a high frequency electric field is used) applied between the electrodes is perpendicular to the substrate.

In addition, there are two methods for introducing reactive gas: a method in which the reactive gas is blown out from the other side of the electrode in a direction perpendicular to the surface to be formed, and a method in which the reactive gas is simply introduced into the reaction vessel, filling the entire reaction vessel with the reactive gas. Methods are known in which the reactor is filled with gas, and in particular, a reactive gas is supplied without forming a gas flow in one direction.

[Problems with conventional technology]

In the conventionally known parallel plate type plasma vapor phase reaction method mentioned above, the growth rate of the film is
There is a problem in that it is small at 0.1 to 2 Å/sec.

In particular, in the method of filling the entire reaction chamber with reactive gas, the reaction product is extremely small at 0.1 to 0.4 Å/sec, and in addition, reaction products adhere to the inner wall of the chamber in the form of flakes, which fall onto the substrate and become pinned. There was a problem in that it induced the formation of holes.

Further, in the above-mentioned parallel plate type device, since the substrate is arranged on one electrode in parallel with the electrode, there is a problem that the productivity is low. For example, when producing a solar cell, the manufacturing cost exceeds 5,000 yen for a 10 cm ² substrate, and 4,000 yen of that amount
The current state of affairs was completely absurd, with costs exceeding 100,000 yen being depreciation costs for equipment.

[Problem to be solved by the invention]

The present invention addresses the problems of the conventional parallel plate type plasma gas phase reactor described above, such as "inefficient use of reactive gas (poor film forming efficiency)" and "small number of substrates that can be simultaneously formed. The purpose of this study is to solve the above problems and to obtain a highly productive plasma vapor phase reaction device and a plasma vapor phase reaction method using this device.

[Means to solve the problem]

(First Invention) The first aspect of the present invention is to provide a means for introducing and discharging a reactive gas, a pair of electrodes, a pair of guides, and a plurality of substrates between the pair of electrodes. a means for holding the plurality of substrates apart; a movable substrate support having a structure surrounding the entirety of the plurality of substrates; The substrate is confined in a closed space, and means for introducing and discharging the reactive gas are provided so that the reactive gas flows approximately parallel to the surface on which the substrate is formed, and the reactive gas is applied from the pair of electrodes. The pair of electrodes are provided such that the electric field that generates the plasma is applied approximately parallel to the formation surface of the substrate, and the flow of the reactive gas and the electric field that generates the plasma are approximately orthogonal to each other. As you do,
The gist of the configuration is that means for introducing and discharging the reactive gas, and the pair of electrodes are provided.

(Second Invention) The second aspect of the present invention is to provide a means for introducing and discharging a reactive gas, a pair of electrodes, a pair of guides, and a plurality of substrates between the pair of electrodes. A plasma vapor phase reaction method using a plasma vapor phase reaction apparatus comprising: a means for holding the plurality of substrates apart; and the substrate support, and are confined in a closed space,
The reactive gas is flowed approximately parallel to the formation surface of the substrate, the electric field for generating plasma applied from the pair of electrodes is applied approximately parallel to the formation surface of the substrate, and the reaction gas is flowed approximately parallel to the formation surface of the substrate. The gist of this is that the plasma gas phase reaction is carried out in such a way that the flow of the gas and the electric field that generates the plasma are approximately perpendicular to each other.

In the present invention, a plurality of substrates are held by a substrate support having a structure surrounding the substrates, and during film formation, a closed space is formed by the substrate support and a pair of guides, and the substrates are held in the closed space. By holding the
This provides high film formability.

Further, by flowing the reactive gas approximately parallel to the surface on which the substrate is formed and applying an electric field approximately parallel to the surface on which the substrate is to be formed, it is possible to increase the utilization efficiency of the reactive gas.

Furthermore, since the plasma generated by the electric field applied from the pair of electrodes is confined in the closed space formed by the substrate support and the pair of guides, the plasma does not spread throughout the interior of the reaction vessel and is efficiently generated. A film is formed.

・Do not contaminate the inner wall of the reaction vessel.

This effect can be obtained.

Examples utilizing the present invention will be shown below, and the present invention will be explained based on specific examples.

〔Example〕

The configuration of this embodiment is shown in FIG.

In the drawing, the reactive gas is the gas introduction system 26, 2.
7, 28, passes through the inlet 66, and is ejected laterally from the outlet 18. Further, the unnecessary gas after the reaction is exhausted from the exhaust port 21 to the rotary pump 37 via 76. The substrates 2 are arranged vertically in a row and are held in space by a substrate support (holder) 74. Guides 70 and 71 allow the reactive gas to flow selectively into the horizontal cylindrical space.

The electric field that generates plasma is generated by a high frequency power source 1.
The voltage is applied in parallel to the formation surfaces of the plurality of vertically held electrodes through a pair of electrodes 67 and 72 from 5. Here, a substrate support 74 and a pair of guides 70,
Since a closed space is formed by 71 and the generated plasma is confined, the reaction efficiency can be increased and a configuration can be adopted in which unnecessary film formation is not performed on the inner wall of the reaction vessel.

Furthermore, in this embodiment, as the basic structure is shown in FIG. 4, the direction of the electric field applied between the pair of electrodes 67 and 72 (vertical direction in FIG. 4),
The reactive gas is introduced from the inlet 66 and discharged from the outlet 21.
The structure is such that the direction of the flow of the reactive gas discharged into the reactor (the direction from right to left in FIG. 4) is approximately perpendicular to the flow direction.

In addition, an infrared lamp is used for heating the substrate.
2' are provided above and below to ensure uniform heating.

When the configuration of this embodiment is adopted, the substrate 2 support 74 can be easily moved from one system to another, and is an excellent structure for mass production.

A typical example of the film formed in this example is a non-single crystal semiconductor layer to which hydrogen or a halogen element is added.

Specifically, silicon, germanium, silicon carbide (not only SiC, but also SixC _1-x 0 in the present invention)
<X<1), germanium silicide (SixGe _1-x 0<X<1), tin silicide (SixSn _1-x
0<X<1).

Furthermore, by connecting a plurality of reaction vessels, a plurality of semiconductor layers having conductivity type of P, N, or I can be formed, and junctions such as PN
A junction, PI junction, NI junction or PIN junction can be formed.

[Reference Example 1] A closed space is formed by a substrate support and a pair of guides, a reactive gas is caused to flow approximately parallel to the surface of the substrate to be formed on a plurality of substrates held within the closed space, and A plasma vapor phase reaction apparatus having a configuration in which an electric field is applied from a pair of electrodes approximately parallel to the surface on which a substrate is formed will be shown below as a reference example.

The plasma vapor phase reactor of this reference example will be explained with reference to FIG.

This drawing shows PI junction, NI junction, PN junction, PIN junction, PINIP junction, PINIP junction or PINPIN...
Semiconductor layers with different conductivity types or the same conductivity type but with different main components or stoichiometric ratios are formed on a semiconductor on a substrate such as a PIN junction, and each semiconductor is a semiconductor formed in a previous process. In order to prevent the second semiconductor layer from being influenced by the previous semiconductor layer, a second semiconductor layer is formed in another independent reaction vessel connected to the reaction vessel in which the previous semiconductor layer was formed, and is laminated and bonded on top of the previous semiconductor layer. This is a device for creating and continuously forming multiple layers.

In the drawings, a multi-chamber (in this case, three reaction vessels) type plasma having first and second preliminary chambers formed by laminating three P-, I-, and N-type semiconductor layers constituting a PIN junction is shown. An example of a gas phase reactor is shown.

In the drawings, , has three reaction vessels 6, 7, 8, each having independently reactive gas introduction means 17, 18, 19 and exhaust means 20, 2.
1 and 22 to prevent reactive gas from flowing back from the supply system or exhaust system or from mixing with reactive gas from other systems.

This apparatus was provided with a first preliminary chamber 5 on the entrance side, and substrates 4, 4 were inserted into a substrate holder (also referred to as holder) 74 through a door 42 and placed in this preliminary chamber. The substrates having the surfaces on which the film is to be formed are arranged such that the back surfaces on which the film is not formed are in contact with each other, with a gap of 2 to 10 cm, preferably 3 to 5 cm.
The length of this gap in the flow direction of the reactive gas on the substrate is
3 to 4 as the length increases to 10 cm, 15 cm, and 20 cm.
cm, 4-5 cm, and 5-6 cm. Furthermore, this first preliminary chamber 5 was evacuated using a vacuum pump 35 by opening a valve 34. Thereafter, the reaction vessels 6, 7, and 8, which had been evacuated in advance, were moved by closing the gate valve 44. At this time, the substrate 1 held in the reaction container 6 is transferred to the reaction container 7.
Then, the substrates held in the reaction vessel 8 and the substrates held in the reaction vessel 8 were simultaneously moved to the preliminary chamber 9 on the second outlet side by opening the gate valves 45, 46, and 47.

After the gate valve 47 was closed, the substrate transferred to the second preliminary chamber was brought to atmospheric pressure by introducing nitrogen through 41, and was taken out through the door 43.

That is, the movements of the gate valves are as follows: when the doors 47, 43 are opened at atmospheric pressure, the gate valves 44, 45, 46,
47 is closed, and a plasma gas phase reaction is carried out in each chamber. On the contrary, door 42,
43 is closed and the preliminary chambers 5, 9 are sufficiently evacuated, the gate valves 44, 45, 46, 47
It has a mechanism that opens and moves the substrate and holder of each chamber to the adjacent chamber.

Furthermore, a cylindrical space is formed in the reaction vessel, a substrate is placed in the cylindrical space, and a film is formed on the substrate by plasma reaction. After the film is formed in the first reaction vessel, the substrate is placed. The holder provided therein is configured to be moved to the second reaction vessel. In the second reaction vessel, a holder similar to that of the first reaction vessel was surrounded by guides at the top and bottom to form a cylindrical space.

Therefore, when the reaction takes place in a cylindrical space, the first
A film similar to the first film formed on the substrate in the reaction chamber will also adhere to the holder, and the second film will be deposited as is.
When the holder is moved to the reaction chamber and the second film is further formed, the second film is similarly formed on the holder. Therefore, the film is formed on the holder in the same atmosphere as when the film is formed on the substrate.

Therefore, in the device of this reference example, a film is formed on the inner wall of the holder in the same way as the substrate, so
The inside of the holder becomes the same atmosphere as the film formation surface,
Even if the first film detaches from the inner wall of the holder, the same thing will happen on the film forming surface, and it will not affect the properties of the film itself, so a high quality film can be formed. As a result, high quality semiconductor devices can be manufactured. Furthermore, since the plasma does not leak outside the cylindrical space, there is no film formation on the inner wall of the reaction vessel. This eliminates the need to clean the inside of the reaction vessel.

The case of forming a P-type semiconductor layer in the first reaction vessel 6 in the system will be described below.

The reaction system (including reaction vessel 6) is 10 ^-3 to 10 torr
Preferably it is 0.01 to 1 torr, for example 0.1 torr.

For the silicide gas 24, reactive gases include silane (SinH _2o+2 ≧ especially SiH ₄ ), dichlorosilane (SiH ₂ Cl ₁ ), trichlorosilane (SiHCl ₂ ), and silicon tetrafluoride (SiF ₄ ). Silane, which is easy to handle, was used. Dichlorosilane is cheaper and may be used.

Methane (CH ₄ ) was used for the carbide gas 23 to form SixC _1-x (0<X<1) in this example. It may be a carbide gas such as CF ₄ or a carbon chloride such as carbon tetrachloride (CCl ₄ ).

For silicon carbide (SixC _1-x 0<X<1),
2000PPM of boron with hydrogen as a P-type impurity
diborane diluted to 25%. In addition, gallyum was treated with TMG (Ca(CH ₂ ) ₃ ) at 10 ¹⁹ ~
It may be added to a concentration of 9×10 ²¹ cm ⁻³ .

As the carrier gas 39, hydrogen (H ₂ ) was used during the reaction, but nitrogen (N ₂ ) was used in the form of liquid nitrogen before and after the start of the reaction. These reactive gases pass through the respective flowmeters 33 and valves 32, and then enter the negative electrode 61 of the high frequency power source from the reactive gas inlet 17.
The reactor was supplied to the reaction vessel 6 through the process. Reactive gas is 7
The substrate is introduced into the substrate 1 and the holder 74 forming a cylindrical space through a guide of 0, and electrical energy, for example, high frequency energy of 13.56 MHz, is applied between the negative electrode 61 and the positive electrode 51 to cause a reaction, and a reaction is generated on the substrate. The material was coated.

The substrate was heated to 100-400°C, for example 200°C, by infrared heaters 11, 11'.

This infrared heater is also called an infrared image furnace, and since it has a rod shape, the upper heater and the lower heater are arranged in a direction orthogonal to each other, and the cylindrical space in this reaction vessel is heated to 200±10℃, preferably ±50℃. It was installed within ℃. This heater only has a 200~200°
Temperatures of 120°C and 80°C also caused non-uniformity and were not practical at all. Furthermore, by making the substrates orthogonal to each other, the temperature distribution between the substrates could be kept within ±10°C. Thereafter, as described above, the above-described reactive gas was introduced into the container, and high-frequency energy 14 of 10 to 50 W was further supplied to cause a plasma reaction.

Thus, the P-type semiconductor layer has B ₂ H ₆ /SiH ₄ =0.5%,
A thin film having a thickness of about 100 Å was formed using this reaction system under the conditions of CH ₄ /(SiH ₄ +CH ₄ )=0.5. Eg=2.0eV, σ=1×10 ^-4 ~3×10 ^-3 (Ω
cm) ^-1 .

Conventional silicon carbide generally requires greater high frequency energy than silicon alone. Therefore, when the electric field is perpendicular to the surface to be formed, the transparent conductive film (ITO or tin oxide 600 to 800
When the electrode coating (A) is spattered, it turns into tin oxide or metal tin, which is not transparent and tends to become cloudy.

However, as shown in the embodiments of the present invention, when the plasma electric field is made approximately parallel to the surface to be formed, the reaction products due to this electric field move along the surface.
No clouding due to sputtering effect was observed even when 30 to 50 W was applied, and the characteristic yield and manufacturing yield were improved compared to the case where the vertical electric field had a limit of 2 to 5 W.

Substrates include conductor substrates (stainless steel, titanium, titanium nitride, and other metals), semiconductors (silicon, silicon carbide,
germanium), insulators (alumina, glass,
Organic materials) or composite substrates (conductive films such as tin oxide or ITO on a glass insulating substrate or a single layer on ITO)
One in which a two-layer film with SnO ₂ is formed, one in which conductive electrodes are selectively formed on an insulating substrate,
A P- or N-type semiconductor formed on an insulating substrate was used. The substrate can be flexible or a rigid plate.

In this way, a plasma reaction is performed for 1 to 5 minutes, and P
A silicon carbide film doped with boron or gallium as a type impurity was fabricated. Further, a substrate is placed on the first semiconductor layer and a second semiconductor layer is placed on top of the first semiconductor layer.
was moved to a reaction vessel 7, where an intrinsic semiconductor layer was formed to a thickness of about 5000 Å.

Furthermore, in addition to high frequencies, microwaves with a frequency of 1 GHz or higher, for example 2.45 GHz, are supplied.

In FIG. 2, the reactive gas is introduced from the quartz tube inlet into the mesh or porous electrode 6.
It was derived after going through 7. reactive gas outlet 18;
Substrate 2, holder 74, exhaust port 21, pair of electrodes 6
7 and 68 are further shown in a third perspective view (with the front half cut away).

That is, in FIG. 3, the substrates 2 are placed parallel to each other with a fixed gap of 3 cm, for example, in the vertical direction in a holder 74 which is an insert type with their back surfaces aligned with each other. Made of holder and quartz,
It has a disk-shaped disk on the upper side and a substrate groove 94 connected to the disk. The disk is held in space by four supports 80, 80', which rotate according to the rotation of the shafts 79, 79', thereby rotating the disk at a speed of 3 to 10 revolutions per minute; It promotes homogenization of reactive gases.

The reactive gas is passed through a hole 73 with a diameter of 1 to 3 mm from the outlet 18.
It passes through a mesh electrode (hole approximately 5 to 10 mm) 67 and is blown out downward. In order to prevent reactive gas from being released in the 80 direction by the guide 70 of the holder,
The gap between 81 and 81 was 1 cm or less, preferably 2 to 5 mm. The reactive gas is formed into a cylindrical hollow space formed in the form of a chimney by the formation surfaces of the substrates 2, 2 and the wall 96 for holding the groove 95 for erecting the substrate 2. It was made to flow in layers in the directions of 83 and 85. The quartz sidewall 96 is spaced 10 to 20 mm outward from the groove 95 to prevent reactive gas from sagging on the sidewall 96, thereby increasing the uniformity of the coating thickness at the edge of the substrate 2. promoted.

Regarding the exhaust system, in order to reduce the inflow of reactive gas from 84 and to selectively give priority to 85, the gap between the guide 71 and the lower end of the substrate was set to 1 cm or less. That is, by setting the conductance of the gas flows 82 and 84 to about 1/5 or less, preferably 1/30 to 1/100, of 83 and 85, the reactive gas was selectively introduced into the cylindrical space. The distance between the positive electrode 68 and the lower end of the substrate was determined by adjusting the height of the guide.

Furthermore, the negative electrode 67 and the upper end of the substrate, that is, the disk 74
Similarly, the distance between the guide 70 and the guide 70 was adjusted.

As is clear from FIG. 3, the electrode has a quartz guide 70, an upper lid 93, a guide 71,
It is surrounded by a lower lid 94 to prevent parasitic discharge between the electrode and the inner wall of the chamber (particularly the stainless steel chamber). Furthermore, since the inner diameter of the reactive gas inlet 68 and the negative electrode have approximately the same size, and the inner diameter of the exhaust port 21 and the positive electrode have approximately the same size, when high-frequency discharge is performed, this cylinder The reactive gas flows along the shaped space, that is, the surface on which the reactive gas is formed, preferentially causing the space to become a plasma discharge. As a result, the plasma conversion rate of the reactive gas becomes extremely high, and it is possible to prevent excessive reaction products from adhering to the inner wall of the reaction vessel (belgear) in the form of flakes, which can cause pinholes. Ta.

In addition to the configuration of FIG. 3 as described above, in FIG. 2 with corresponding numbers, infrared lamps 12,
12' are provided in the upper and lower directions to promote homogenization of the substrate.

The structure shown in FIG. 3 is similar to that of the electrodes, substrates, substrate supports (holders), reactive gas outlets, and exhaust ports in the reaction vessels 6 and 8 in the system shown in FIG. Thus, in FIG. 3, the substrate and the substrate support (holder) were able to arrive from the direction of the system 77 and move in the direction of the system 78 without any hindrance.

Regarding the effect of microwaves having a frequency of 1 GHz or higher in FIG. 2, details are shown in Patent Application No. 57-126047 (filed on July 19, 2013) filed by the present inventor.

In the drawing, it was possible to obtain 3 Å/sec at 250°C by applying a high frequency electric field of 20 W and silane at 30 c.c./min. As a result, compared to 0.1 to 1 Å/sec in the conventional parallel plate electrode system, the film growth rate in the same reaction vessel is 10 cm ² 8 Å/sec compared to 10 cm ² 8 Å/sec in the former case. 0.5
In terms of Å/second, this has increased six times, making it possible to produce a total of 48 times more volume. In addition, in the conventional space for manufacturing 50 cm, a 20 cm x 50 cm substrate with a gap of 5 cm,
Arraying can be done at the same time, and the area to be formed is practically 20
× 50 × 20 = 2 × 10 ⁴ cm ² , so it can be increased 8 times, and the distance between the electrodes is now 25 to 27 cm compared to the conventional 4 cm, which improves the ionization rate of reactive gas and increases the film growth rate. can also obtain 4 Å/s, so
As a result, it was found to be an extremely ideal mass production method with a growth rate that is 64 times faster.

Since the semiconductor layer thus formed has a long plasma state distance, its photoconductivity also ranges from 2×10 ^-4 to 7×
10 ^-3 (Ωcm) ^-1 , dark conductivity 3×10 ^-7 ~1×10 ^-1 (Ω
cm) ^-1 .

In this way, the type semiconductor layer is approximately 5000 Å thick in the system.
After forming the substrate to a thickness of , the substrate was transferred to the reaction vessel 8 of the system according to the operations described above, and an N-type semiconductor layer was formed. To this N-type semiconductor layer, as shown in FIG. 1, phosphin was supplied from 31 at PH ₃ /SiH ₄ =0.1%, silane was supplied from 30, and carrier gas hydrogen was supplied from 29 at SiH ₄ /H ₂ =50 to form a system. Similarly, an N-type microcrystalline or polycrystalline semiconductor layer having a fiber structure was formed to a thickness of 200 Å. Other reaction equipment is the same as the system.

After this process, enter the PIN from the second preliminary room 9.
An aluminum electrode with a thickness of approximately 1 μm is made by vacuum evaporation on the substrate that has been formed to form the bond.
(ITO + SnO ₂ ) surface electrode - (PIN
Semiconductor) (Al back electrode) was constructed.

Its characteristics as a photoelectric conversion device are 7 to 9%, with an average of 8% as an intrinsic efficiency characteristic at AM1 (100 mW/cm ² ) on a 10 cm ² substrate, and it is a hybrid type 15
Even on a cm×40 cm substrate, an intrinsic efficiency of 6 to 7% could be obtained. This improvement in efficiency is due to the fact that the PI junction on the side where light enters is extremely planar, and even in non-single crystal semiconductors such as amorphous or semi-amorphous semiconductors, an I-type semiconductor layer is grown on a P-type semiconductor layer. This was due to the lamination, and the release voltage was 0.88 to 0.9V.
The short circuit current is large at 20 to 22 mA/ ^cm2 , and the FF is also
As large as 0.70 to 0.78, the density of recombination centers inside the PIN type semiconductor layer is 1/10 to 1/10 compared to conventional methods.
It is estimated that the increase in current due to the reduction to 1/50 led to a large improvement in characteristics.

As described above, the plasma reactor of this reference example improves the productivity of semiconductors formed by 30 to 70 times, and the characteristics are also improved compared to the conventional conversion efficiency of 5 to 7%.
This is an extremely original product that improves performance by 30%.

[Reference example 2] This reference example is an example in which the method of arranging the substrates is changed.

The structure of this reference example is shown in FIG. 5, and FIG. 5A corresponds to the structure shown in FIG. 3.

In FIG. 5A, the reactive gas is introduced from the inlet 66 to the exhaust port 21 via the negative electrode 67, and then to the positive electrode 6.
8. As for the exhaust system 74, the substrate 2 has a tapered shape and becomes narrower from the inlet side to the exhaust port side of the substrate, further promoting uniformity of the formed film.

Here, in A, flakes were not attached to the surface to be formed, that is, the production yield due to pinholes was improved, and in addition, the film quality of the film was homogeneous in the flow direction of the reactive gas. However, the productivity was about 1/2 that of the first manufacturing equipment.

In the above specification, it is assumed that there is one PIN junction. However, in many applications such as PINIP type phototransistors, PINPIN...PIN tandem structure photoelectric conversion devices, reaction vessels may be further connected according to the number of semiconductor layers.

In the above description, there is no restriction on the crystal structure of the formed non-single crystal semiconductor film, whether it is amorphous or polycrystalline.

Furthermore, instead of neutralizing the dangling bonds of silicon or carbon with hydrogen by Si-H or C-H,
It goes without saying that the process may be carried out using -Cl, C-Cl and a halide gas, particularly a chloride gas, but the concentration is preferably 10 at % or less, for example 2 to 5 at %.

Regarding the types of semiconductors to be formed, Si, Ge, SixC _1-x (0<X<1), SixGe _1-x (0
<X<1), SixSn _1-x (0<X<1), but it goes without saying that compound semiconductors such as GaAs, GaAlAs, BP, and Cds may also be used.

In addition, P- or N-type impurities are selectively mixed or diffused into the formed silicon carbide film using photoetching technology to partially create a PN junction, and this junction is used to create transistors, diodes, W- A PIN junction type visible light laser, light emitting element, or photoelectric conversion element having an N-W (WIDE-NALLOW-WIDE) structure may be made. In particular, W-N (WIDE TO NALLOW), which has a heterojunction structure with a wide energy band width on the incident light side, is fabricated independently and laminated with different conductivity types as well as different products in each reaction chamber. We believe that this technology is extremely important industrially.

〔Effect of the invention〕

By confining multiple substrates in a closed space using a substrate support with a structure surrounding the entire multiple substrates and a pair of guides, and applying a reactive gas and an electric field parallel to the surface of the substrate to be formed, multiple substrates can be formed. It has become possible to simultaneously form films on substrates and obtain high productivity.

Furthermore, since the plasma is confined within the substrate support during film formation, unnecessary film formation within the reaction vessel is reduced, reducing the problem of cleaning inside the reaction vessel, which is a problem in the CVD process. .

[Brief explanation of the drawing]

FIGS. 1 and 2 are schematic diagrams of a manufacturing apparatus for forming a semiconductor film as a reference example. FIG. 3 shows a perspective view of a portion of the apparatus of FIG. FIG. 4 shows an embodiment of the invention. FIG. 5 shows another reference example corresponding to FIG. 3. [Explanation of symbols], 26, 27, 28... gas introduction system, 66... inlet, 18... outlet, 21...
...Exhaust port, 76...Exhaust system, 37...Rotary pump, 74...Substrate support, 70, 71...Reactive gas, 15...High frequency power supply, 67, 72...
A pair of electrodes, 12, 12'...infrared lamp.

Claims (1)

[Claims] 1. means for introducing and discharging a reactive gas, a pair of electrodes, a pair of guides, and a means for holding a plurality of substrates between the pair of electrodes with the surfaces to be formed separated from each other. and a movable substrate support having a structure surrounding the entire plurality of substrates, the plasma vapor phase reactor comprising: the pair of guides and the substrate support,
The plurality of substrates are confined in a closed space, and means for introducing and discharging the reactive gas are provided so that the reactive gas flows approximately parallel to the surface on which the substrate is formed; The pair of electrodes are provided so that the electric field that generates the plasma applied from the electrodes is applied approximately parallel to the surface on which the substrate is formed, and the flow of the reactive gas and the electric field that generates the plasma are connected. means for introducing the reactive gas and means for discharging the reactive gas so as to be substantially perpendicular to each other;
A plasma vapor phase reaction apparatus, characterized in that the pair of electrodes are provided. 2 means for introducing and discharging reactive gas; a pair of electrodes; a pair of guides; a means for holding a plurality of substrates between the pair of electrodes with their formation surfaces separated; and the plurality of substrates. A plasma vapor phase reactor using a plasma vapor phase reactor having a movable substrate support having a structure surrounding the entire structure, wherein the substrate is moved into a closed space by the pair of guides and the substrate support. The reactive gas is flowed approximately parallel to the formation surface of the substrate, and the electric field for generating plasma applied from the pair of electrodes is approximately parallel to the formation surface of the substrate. and performing the plasma vapor phase reaction in such a manner that the flow of the reactive gas and the electric field that generates the plasma are substantially perpendicular to each other.