JPH0522377B2 - - Google Patents

Info

Publication number
JPH0522377B2
JPH0522377B2 JP58048070A JP4807083A JPH0522377B2 JP H0522377 B2 JPH0522377 B2 JP H0522377B2 JP 58048070 A JP58048070 A JP 58048070A JP 4807083 A JP4807083 A JP 4807083A JP H0522377 B2 JPH0522377 B2 JP H0522377B2
Authority
JP
Japan
Prior art keywords
layer
deposited
wafer
vacuum chamber
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58048070A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5956732A (ja
Inventor
Ranchun Yangu Peetaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Unisys Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisys Corp filed Critical Unisys Corp
Publication of JPS5956732A publication Critical patent/JPS5956732A/ja
Publication of JPH0522377B2 publication Critical patent/JPH0522377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP58048070A 1982-03-26 1983-03-24 真空蒸着層に正傾斜のステツプ変化を与える方法 Granted JPS5956732A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/362,577 US4405658A (en) 1982-03-26 1982-03-26 Method of producing positive slope step changes on vacuum deposited layers
US362577 1982-03-26

Publications (2)

Publication Number Publication Date
JPS5956732A JPS5956732A (ja) 1984-04-02
JPH0522377B2 true JPH0522377B2 (2) 1993-03-29

Family

ID=23426647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58048070A Granted JPS5956732A (ja) 1982-03-26 1983-03-24 真空蒸着層に正傾斜のステツプ変化を与える方法

Country Status (5)

Country Link
US (1) US4405658A (2)
EP (1) EP0090613B1 (2)
JP (1) JPS5956732A (2)
CA (1) CA1192672A (2)
DE (1) DE3379137D1 (2)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0082588A3 (en) * 1981-11-02 1983-10-26 Konica Corporation Photolithographic elements for the production of metal images
US4496648A (en) * 1982-03-26 1985-01-29 Sperry Corporation Method of making high reliability lead-alloy Josephson junction
US5357397A (en) * 1993-03-15 1994-10-18 Hewlett-Packard Company Electric field emitter device for electrostatic discharge protection of integrated circuits
JPH09184080A (ja) 1995-12-27 1997-07-15 Vacuum Metallurgical Co Ltd 超微粒子による薄膜形成方法、およびその薄膜形成装置
US6855299B1 (en) 1998-06-04 2005-02-15 Kenneth J. Southwick Collider chamber apparatus and method of use of same
US6110432A (en) * 1998-06-04 2000-08-29 Southwick; Kenneth J. Collider chamber apparatus and method of use of same
KR101446910B1 (ko) * 2007-12-27 2014-10-06 주식회사 동진쎄미켐 도전성 유리의 투명전도 산화막 패턴 형성방법 및 이에의하여 제조되는 도전성 유리
US20090252845A1 (en) * 2008-04-03 2009-10-08 Southwick Kenneth J Collider chamber apparatus and method of use
US20100187320A1 (en) * 2009-01-29 2010-07-29 Southwick Kenneth J Methods and systems for recovering and redistributing heat
US20110149678A1 (en) * 2009-10-09 2011-06-23 Southwick Kenneth J Methods of and Systems for Improving the Operation of Electric Motor Driven Equipment
TWI513993B (zh) 2013-03-26 2015-12-21 Ind Tech Res Inst 三軸磁場感測器、製作磁場感測結構的方法與磁場感測電路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7412383A (nl) * 1974-09-19 1976-03-23 Philips Nv Werkwijze voor het vervaardigen van een in- richting met een geleiderpatroon.
US4129167A (en) * 1977-07-18 1978-12-12 General Electric Company Nb3 Ge superconductive films grown with nitrogen
US4218532A (en) * 1977-10-13 1980-08-19 Bell Telephone Laboratories, Incorporated Photolithographic technique for depositing thin films
US4224361A (en) * 1978-09-05 1980-09-23 International Business Machines Corporation High temperature lift-off technique

Also Published As

Publication number Publication date
US4405658A (en) 1983-09-20
CA1192672A (en) 1985-08-27
EP0090613B1 (en) 1989-02-01
EP0090613A3 (en) 1986-10-01
DE3379137D1 (en) 1989-03-09
EP0090613A2 (en) 1983-10-05
JPS5956732A (ja) 1984-04-02

Similar Documents

Publication Publication Date Title
CA1204883A (en) Semiconductor device and manufacturing process thereof
US5081064A (en) Method of forming electrical contact between interconnection layers located at different layer levels
US5354416A (en) Dry etching method
JP2895324B2 (ja) 集積回路製造のための改良された材料蒸着方法
GB2173822A (en) Planarizing semiconductor surfaces
KR19980080768A (ko) 낮은 저항을 갖는 평활한 질화 티타늄 박막
JPH0522377B2 (2)
GB2119166A (en) Integrated circuit planarizing process
KR100243785B1 (ko) 스텝된 반도체 웨이퍼 위에 알루미늄층을 형성시키기위한 다단계 스퍼터링 방법
EP0258698B1 (en) Dry etching method
JPS61170050A (ja) 低抵抗接点の形成方法
US20200135464A1 (en) Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
US4418095A (en) Method of making planarized Josephson junction devices
KR100220933B1 (ko) 반도체 소자의 금속배선 형성방법
US5614070A (en) Sputtering apparatus for forming metal lines
KR100270460B1 (ko) 스퍼터링장치
US20030042133A1 (en) Method for depositing a metal barrier layer
KR100200499B1 (ko) 반도체 소자의 금속배선막 형성방법
KR100480572B1 (ko) 알루미늄배선층형성방법
JPS5932126A (ja) 半導体装置の製造方法
JPS63155645A (ja) 表面平坦化方法
KR0161431B1 (ko) 스퍼터링 장치 및 이를 이용한 금속막 형성방법
JPH0311543B2 (2)
KR100458294B1 (ko) 반도체소자의장벽금속층형성방법
JPS58199523A (ja) 半導体装置の製造方法