JPS5956732A - 真空蒸着層に正傾斜のステツプ変化を与える方法 - Google Patents

真空蒸着層に正傾斜のステツプ変化を与える方法

Info

Publication number
JPS5956732A
JPS5956732A JP58048070A JP4807083A JPS5956732A JP S5956732 A JPS5956732 A JP S5956732A JP 58048070 A JP58048070 A JP 58048070A JP 4807083 A JP4807083 A JP 4807083A JP S5956732 A JPS5956732 A JP S5956732A
Authority
JP
Japan
Prior art keywords
deposited
layer
slope
wafer
inert gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58048070A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0522377B2 (2
Inventor
ペ−タ−・ランチユン・ヤング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Sperry Rand Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sperry Rand Corp filed Critical Sperry Rand Corp
Publication of JPS5956732A publication Critical patent/JPS5956732A/ja
Publication of JPH0522377B2 publication Critical patent/JPH0522377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP58048070A 1982-03-26 1983-03-24 真空蒸着層に正傾斜のステツプ変化を与える方法 Granted JPS5956732A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/362,577 US4405658A (en) 1982-03-26 1982-03-26 Method of producing positive slope step changes on vacuum deposited layers
US362577 1982-03-26

Publications (2)

Publication Number Publication Date
JPS5956732A true JPS5956732A (ja) 1984-04-02
JPH0522377B2 JPH0522377B2 (2) 1993-03-29

Family

ID=23426647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58048070A Granted JPS5956732A (ja) 1982-03-26 1983-03-24 真空蒸着層に正傾斜のステツプ変化を与える方法

Country Status (5)

Country Link
US (1) US4405658A (2)
EP (1) EP0090613B1 (2)
JP (1) JPS5956732A (2)
CA (1) CA1192672A (2)
DE (1) DE3379137D1 (2)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0082588A3 (en) * 1981-11-02 1983-10-26 Konica Corporation Photolithographic elements for the production of metal images
US4496648A (en) * 1982-03-26 1985-01-29 Sperry Corporation Method of making high reliability lead-alloy Josephson junction
US5357397A (en) * 1993-03-15 1994-10-18 Hewlett-Packard Company Electric field emitter device for electrostatic discharge protection of integrated circuits
JPH09184080A (ja) 1995-12-27 1997-07-15 Vacuum Metallurgical Co Ltd 超微粒子による薄膜形成方法、およびその薄膜形成装置
US6855299B1 (en) 1998-06-04 2005-02-15 Kenneth J. Southwick Collider chamber apparatus and method of use of same
US6110432A (en) * 1998-06-04 2000-08-29 Southwick; Kenneth J. Collider chamber apparatus and method of use of same
KR101446910B1 (ko) * 2007-12-27 2014-10-06 주식회사 동진쎄미켐 도전성 유리의 투명전도 산화막 패턴 형성방법 및 이에의하여 제조되는 도전성 유리
US20090252845A1 (en) * 2008-04-03 2009-10-08 Southwick Kenneth J Collider chamber apparatus and method of use
US20100187320A1 (en) * 2009-01-29 2010-07-29 Southwick Kenneth J Methods and systems for recovering and redistributing heat
US20110149678A1 (en) * 2009-10-09 2011-06-23 Southwick Kenneth J Methods of and Systems for Improving the Operation of Electric Motor Driven Equipment
TWI513993B (zh) 2013-03-26 2015-12-21 Ind Tech Res Inst 三軸磁場感測器、製作磁場感測結構的方法與磁場感測電路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7412383A (nl) * 1974-09-19 1976-03-23 Philips Nv Werkwijze voor het vervaardigen van een in- richting met een geleiderpatroon.
US4129167A (en) * 1977-07-18 1978-12-12 General Electric Company Nb3 Ge superconductive films grown with nitrogen
US4218532A (en) * 1977-10-13 1980-08-19 Bell Telephone Laboratories, Incorporated Photolithographic technique for depositing thin films
US4224361A (en) * 1978-09-05 1980-09-23 International Business Machines Corporation High temperature lift-off technique

Also Published As

Publication number Publication date
JPH0522377B2 (2) 1993-03-29
US4405658A (en) 1983-09-20
CA1192672A (en) 1985-08-27
EP0090613B1 (en) 1989-02-01
EP0090613A3 (en) 1986-10-01
DE3379137D1 (en) 1989-03-09
EP0090613A2 (en) 1983-10-05

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