JPH0523537U - Probe card - Google Patents

Abstract

(57) [Summary] [Purpose] Keep the contact resistance of the probe at the electrode pad constant,
It is to facilitate a layout in which the probes are not concentrated. [Structure] A probe (11) having a through hole (13) formed in the substrate (11), attached to the periphery of the through hole (13) of the substrate (11), and having a tip protruding toward the through hole (13) ( A method for measuring electrical characteristics of a semiconductor element (14) by bringing the electrode pads (16) of the semiconductor element (14) into contact with the semiconductor elements (14). A rectangular opening is formed in accordance with the shape of the above, and the probes (12a) (12b) facing the corresponding electrode pads (16) of the semiconductor element (14) are arranged in parallel on each side of the periphery of the through hole (13). To do. Further, a step (18) is provided on the periphery of the through hole (13), and the probe (12a) attached to the upper step (19a) and the lower step (19).
Place every other probe (12b) attached to b).

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a probe card, and more particularly to a probe card used for manufacturing a semiconductor device for measuring electrical characteristics of a large number of semiconductor elements collectively formed on a semiconductor wafer.

[0002]

[Prior Art]

 In the manufacture of semiconductor devices, a large number of semiconductor elements are collectively formed on a semiconductor wafer, and before the semiconductor wafer is cut and separated by dicing for each semiconductor element, the electrical characteristics of each semiconductor element in the state of the semiconductor wafer are The quality of the semiconductor device is determined after measuring the static characteristics.

A measuring device generally called a probe card is used for measuring the electrical characteristics of the semiconductor element in the state of the semiconductor wafer.

As shown in FIGS. 3 and 4, the probe card includes a substrate (1) electrically connected to a measuring device main body (not shown) through a socket, and a socket on the substrate (1). And a large number of probes (2) electrically connected to each other via a wiring pattern (not shown) extending from the contact portion. A through-hole (3) having a substantially elliptical shape is formed in the central portion of the substrate (1) according to the size of a semiconductor element described later, and the through-hole (3) extends from the peripheral edge of the through-hole (3). The probes (2) are radially arranged toward the semiconductor element (4) located below the. The probe (2) has a thick base end, is attached to the peripheral edge of the through hole (3) and is electrically connected to the wiring pattern, and extends from the base end toward the semiconductor element (4). The tip portion is thin, and is bent and formed so as to be inclined downward toward the electrode pad (6) formed on the peripheral portion of the surface of the semiconductor element (4).

The electrical characteristics of the semiconductor element are measured by the probe card having the above structure as follows.

First, the probe card is arranged above the semiconductor wafer (5), and the semiconductor element (4) to be measured is positioned and arranged immediately below the through hole (3). In this state, the tip of each probe (2) of the probe card was placed around the surface of the semiconductor element (4) by bringing the semiconductor wafer (5) and the probe card relatively close to each other. Contact the electrode pad (6). Then, when the probe (2) and the electrode pad (6) come into contact with each other, the semiconductor wafer (5) and the probe card are moved slightly closer to each other, so that the tip of the probe (2) is moved to the electrode pad (6). ) By rubbing the probe (2) in the extending direction, the probe (2) is surely brought into contact with the electrode pad (6) with a predetermined pressing force. Then, the electrical characteristics of the semiconductor element (4) are measured by energization by the contact of the probe (2) with the electrode pad (6). The measurement of the electrical characteristics of the semiconductor element (4) is sequentially performed on all the semiconductor elements (4) of the semiconductor wafer (5).

[0007]

[Problems to be solved by the device]

 By the way, in recent years, the semiconductor element (4) tends to be large, for example, a rectangle, and accordingly, the opening shape of the through hole (3) of the probe card becomes an elliptical shape [see FIG. 3]. The number of the probes (2) tends to increase as the number of the electrode pads (6) increases as the integration degree in 4) increases. As a result, the above-mentioned conventional probe card has the following problems.

First, a large number of probes (2) are arranged radially from the peripheral edge of the through hole (3) toward the electrode pads (6) of the semiconductor element (4). The thicker base end of 2) is advantageous because it allows the array pitch of the probe (2) to be increased at the base end, but on the other hand, the probe (2) does not function as an electrode pad (6). The direction in which the tip rubs the electrode pad (6) when contacting is different for each probe (2), and since the opening shape of the through hole (3) is elliptical, the through hole (3) Since the length of the probe (2) from the peripheral edge of 3) to the electrode pad (6) is different, the contact resistance of the probe (2) at the electrode pad (6) varies and accurate measurement is realized. It was difficult.

Secondly, when the number of the probes (2) increases, it becomes very difficult to lay out the probes (2) in a radial pattern. Since the proximal end portion of the probe (2) is concentrated near the portion corresponding to, there is a problem that the probe (2) is short-circuited due to attachment of foreign matter or the like.

Therefore, the present invention has been proposed in view of the above problems, and an object thereof is to make the contact resistance of the probe at the electrode pad constant so that the probe is not concentrated. An object of the present invention is to provide a probe card capable of facilitating a layout.

[0011]

[Means for Solving the Problems]

 As a technical means for achieving the above object, the present invention has a base end portion attached to a peripheral edge of a through hole formed in a substrate and a tip end portion of the electrode pad of a device to be measured located below the through hole. In a device that measures the electrical characteristics of the device under test by bringing a probe protruding toward it into contact with its electrode pad, the through-hole should have a rectangular opening shape that matches the shape of the device under test. It is characterized in that the probes facing the corresponding electrode pads of the device under test are arranged in parallel on each side of the peripheral edge.

Further, the present invention provides a probe having a base end attached to the periphery of a through hole formed in a substrate and a tip protruding toward an electrode pad of a device under test located below the through hole. In order to measure the electrical characteristics of the device under test by making contact with the electrode pad, a step is formed on the periphery of the through hole, and the probe attached to the upper step and the probe attached to the lower step are connected. It is characterized by arranging every other needle.

[0013]

[Action]

 In the probe card according to the present invention, the through hole is formed into a rectangular opening shape in accordance with the shape of the element to be measured, and the probes facing the corresponding electrode pads of the element to be measured are arranged in parallel on each side of the periphery of the through hole. As a result, the direction in which the probe rubs the electrode pad is constant on the opposite sides of the through hole, so the contact resistance of the probe on the electrode pad is constant and the layout of the probe is simplified. To be done.

Further, by providing a step on the periphery of the through hole and arranging every other probe attached to the upper part and the probe attached to the lower part, the number of the above-mentioned probes is increased. Even if the number increases, the arrangement pitch in the same plane does not become small, and the occurrence of short circuits due to the adhesion of foreign matter is reduced as much as possible.

[0015]

【Example】

 An embodiment of the probe card according to the present invention will be described with reference to FIGS.

As shown in FIGS. 1 and 2, the probe card of the present invention includes a substrate (11) electrically connected to a measuring device main body (not shown) through a socket, and a substrate (11) on the substrate (11). And a large number of probes (12a) (12b) electrically connected through a wiring pattern (not shown) extending from the socket portion.

The first feature of the present invention is that the through hole (13) formed in the central portion of the substrate (11) is rectangular (rectangular) according to the shape (rectangular in the figure) of the semiconductor element (14). The probe (12a) (12b) has an opening shape and faces the electrode pad (16) corresponding to the peripheral portion (15) of the surface of the semiconductor element (14) on each side (17) of the periphery of the through hole (13). ) Are arranged in parallel. That is, the probes (12a) (12b) attached to the respective side portions (17) of the peripheral edge of the through hole (13) extend in a direction orthogonal to the respective side portions (15) of the semiconductor element (14), On the opposite side (17), the extending directions of the probes (12a) (12b) are the same, and on the adjacent side (17), the extending directions of the probes (12a) (12b) are orthogonal to each other. In a relationship. As a result, as will be described later, the directions in which the tips of the probes (12a) (12b) rub the surface of the electrode pad (16) are two orthogonal directions.

A second feature of the present invention is that a step (18) is provided on the periphery of the through hole (13), and the probe (12a) and the lower step (19b) attached to the upper step (19a). This is because the probe (12b) attached to and every other line were arranged. Here, the probe (12a) (12b) has a thicker base end, which is not shown, as in the conventional case, and is attached to the periphery of the through hole (13) and electrically connected to the wiring pattern. , The tip extending from the base end toward the semiconductor element (14) is thin, and is bent so as to be inclined downward toward the electrode pad (16) formed on the peripheral portion of the surface of the semiconductor element (14). Has been formed. Therefore, as described above, the probes (12a) attached to the upper step (19a) of the peripheral edge of the through hole (13) are arranged in the same plane, and the probe (12b) attached to the lower step (19b). ) Are arranged in the same plane. The arrangement pitch of each of the probes (12a) and (12b) attached to the upper step (19a) and the lower step (19b) of the peripheral edge of the through hole (13) at the base end is different from that of the electrode pad (16). Even if the number of probes (12a) (12b) increases as the number of electrode pads (16) increases, which is twice the arrangement pitch, the proximal ends of the probes (12a) (12b) It is possible to suppress the arrangement pitch at the point where it becomes small as much as possible.

The electrical characteristics of the semiconductor element are measured by the probe card having the above structure as follows.

First, as in the conventional case, the probe card is arranged above the semiconductor wafer (20), and the semiconductor element (14) to be measured is positioned and arranged immediately below the through hole (13). In this state, by bringing the semiconductor wafer (20) and the probe card into close proximity to each other, the tips of the probe cards (12a) and (12b) are arranged around the surface of the semiconductor element (14). The electrode pad (16) provided is contacted. Then, the semiconductor wafer (20) and the probe card are moved slightly closer to each other from the time when the probes (12a) (12b) and the electrode pad (16) are brought into contact with each other, so that the probes (12a) (12b) By rubbing the tip of the probe on the electrode pad (16) in the direction in which the probe (12a) (12b) extends, the probe (12a) (12b) surely contacts the electrode pad (16) with a predetermined pressing force. I am trying to do it. Then, the electrical characteristics of the semiconductor element (14) are measured by energization by the contact of the probe (12a) (12b) with the electrode pad (16). The measurement of the electrical characteristics of the semiconductor element (14) is sequentially performed for all the semiconductor elements (14) of the semiconductor wafer (20).

Here, since the tips of the probes (12a) (12b) rub the electrode pad (16) in two direct directions, the probe (12a) (12b ) The direction in which the tip of the probe rubs the electrode pad (16) is constant, the contact state of the tip of the probe (12a) (12b) with the electrode pad (16) is stable, and the contact resistance is kept constant. can do. Further, in this way, the layout of the tips (12a) and (12b) on the substrate (11) is simplified, and the tips (12a) and (12b) are intensively placed at a specific place. There is no such thing. Also, since the base end portions of the probes (12a) and (12b) are installed at different positions in the upper step portion (19a) and the lower step portion (19b), foreign matter may adhere between the probe tips (12a) and (12b). Nor.

[0022]

[Effect of the device]

 According to the probe card of the present invention, the through hole is formed into a rectangular opening shape according to the shape of the element to be measured, and each probe on each side of the periphery of the through hole faces the corresponding electrode pad of the element to be measured. By arranging in parallel with each other, the direction in which the probe rubs the electrode pad is constant on the opposite sides of the through hole, so that the contact resistance of the probe on the electrode pad is stable and the layout of the probe is This simplifies the manufacture of the probe card and makes highly accurate measurement possible.

Further, by providing a step on the periphery of the through hole and arranging every other probe attached to the upper portion and the probe attached to the lower portion, the number of the above-mentioned probe is reduced. Even if the number increases, the arrangement pitch in the same plane does not become small, and even if the integration degree of the device under test is improved, it is possible to sufficiently cope with it, and a short circuit due to adhesion of foreign matter etc. may occur. As much as possible, the reliability is greatly improved.

[Brief description of drawings]

FIG. 1 is a plan view showing an embodiment of a probe card according to the present invention.

FIG. 2 is an enlarged sectional view of an essential part of FIG.

FIG. 3 is a plan view showing a conventional example of a probe card.

4 is a partially enlarged sectional view of FIG.

[Explanation of symbols]

 11 Substrate 12a Probe 12b Probe 13 Through hole 14 Element to be measured (semiconductor element) 16 Electrode pad 18 Step 19a Upper part 19b Lower part

Claims (2)

[Scope of utility model registration request] 1. A probe having a base end attached to the periphery of a through hole formed in a substrate and a tip protruding toward an electrode pad of a device to be measured located below the through hole, the probe having the electrode pad. In which the electrical characteristics of the element to be measured are measured by contacting with the element, the through hole is formed into a rectangular opening shape in accordance with the shape of the element to be measured, and each side of the peripheral edge of the through hole corresponds to the element The probe card is characterized in that the respective probes facing the corresponding electrode pad are arranged in parallel. 2. A probe having a base end portion attached to the periphery of a through hole formed in a substrate and a tip portion protruding toward an electrode pad of a device to be measured located below the through hole, the electrode pad In order to measure the electrical characteristics of the device under test by making contact with the above, a step is provided at the peripheral edge of the through hole, and every other probe attached to the upper step and one attached to the lower step A probe card characterized by being placed in.