JPH0524924A - Sic-coated silicon nitride-silicon carbide combined sintered compact - Google Patents

Sic-coated silicon nitride-silicon carbide combined sintered compact

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Publication number
JPH0524924A
JPH0524924A JP3204935A JP20493591A JPH0524924A JP H0524924 A JPH0524924 A JP H0524924A JP 3204935 A JP3204935 A JP 3204935A JP 20493591 A JP20493591 A JP 20493591A JP H0524924 A JPH0524924 A JP H0524924A
Authority
JP
Japan
Prior art keywords
sic
sintered body
film
coated
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3204935A
Other languages
Japanese (ja)
Inventor
Atsusane Yoshizawa
淳誠 吉沢
Satoshi Iio
聡 飯尾
Hiroshi Tajima
容 多島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP3204935A priority Critical patent/JPH0524924A/en
Publication of JPH0524924A publication Critical patent/JPH0524924A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【構成】SiC/(SiC+Si3 4 )重量比が0.
1〜0.5のSi3 4 −SiC複合焼結体上に、膜厚
が2〜100μmのSiCが被覆されていることを特徴
とするSiC被覆窒化珪素−炭化珪素複合焼結体。 【効果】SiCの被覆による強度劣化並びに熱サイクル
下で使用した場合の被覆膜の剥離及び強度劣化が生じに
くい、密着性に優れたSiC膜を被覆した耐酸化性及び
耐摩耗性を有する被覆焼結体を得ることができる。
(57) [Summary] [Constitution] The weight ratio of SiC / (SiC + Si 3 N 4 ) is 0.
A SiC-coated silicon nitride-silicon carbide composite sintered body, characterized in that a Si 3 N 4 -SiC composite sintered body of 1 to 0.5 is coated with SiC having a film thickness of 2 to 100 μm. [Effect] A coating which is coated with a SiC film having excellent adhesion, which is resistant to strength deterioration due to the coating of SiC, peeling of the coating film when used under a thermal cycle, and strength deterioration, and which has oxidation resistance and wear resistance. A sintered body can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【産業上の利用分野】本発明は、ガスタービン部品、自
動車エンジン部材等の高温で使用される耐酸化及び耐熱
サイクルの構造材料並びに切削工具、摺動部材等の高硬
度及び耐摩耗性が要求される材料に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention requires structural materials which are used at high temperatures, such as gas turbine parts and automobile engine parts, and which have oxidation resistant and heat resistant cycles, and high hardness and wear resistance of cutting tools, sliding members and the like. Related to the material.

【0002】[0002]

【従来の技術】SiC(被覆材)と焼結体との密着性を
高めた被覆焼結体として以下のものがある。特開昭58
−88190号公報では、窒化珪素(Si34 )焼結
体を炭化珪素(SiC)によりCVDコーティングした
被覆焼結体が開示されている(以下「従来技術1」とい
う)。特開昭62−197370号公報では、窒化珪素
(Si3 4 )焼結体の粒界に熱膨張率の大きい結晶相
を析出させ、炭化珪素(SiC)被膜の熱膨張率に近づ
けることで密着強度を高めた被覆焼結体が開示されてい
る(以下「従来技術2」という)。
2. Description of the Related Art The following are coated sintered bodies in which the adhesion between SiC (covering material) and the sintered body is improved. JP-A-58
Japanese Patent Laid-Open No. 88190 discloses a coated sintered body in which a silicon nitride (Si 3 N 4 ) sintered body is CVD coated with silicon carbide (SiC) (hereinafter referred to as “prior art 1”). In Japanese Patent Laid-Open No. 62-197370, a crystal phase having a large coefficient of thermal expansion is precipitated at a grain boundary of a silicon nitride (Si 3 N 4 ) sintered body to bring it closer to the coefficient of thermal expansion of a silicon carbide (SiC) coating. A coated sintered body having improved adhesion strength is disclosed (hereinafter referred to as "prior art 2").

【0003】[0003]

【発明が解決しようとする課題】しかし、これらの従来
技術によるSiC被覆Si3 4 焼結体は、下記に示す
課題がある。従来技術1による被覆焼結体は、焼結体
(Si3 4 )と被覆材(SiC)の熱膨張差により、
熱サイクル下で使用したときにクラックを生じてしま
う。従来技術2による被覆焼結体は、Si3 4 焼結体
の熱膨張率をSiCの熱膨張率に近づけるためにSi3
4 の焼結時に用いる大量の焼結助剤が焼結体の強度劣
化をまねいてしまう。上記の理由により、従来技術の被
覆焼結体は、構造材料として用いる際に要求される熱サ
イクルがかかるような環境下では、使用が不可能であっ
た。本発明の目的は、SiCの被覆による強度劣化並び
に熱サイクル下で使用した場合の被覆膜の剥離及び強度
劣化が生じにくい、密着性に優れたSiC膜を被覆した
耐酸化性及び耐摩耗性を有する被覆焼結体を提供するこ
とである。
However, these conventional SiC-coated Si 3 N 4 sintered bodies have the following problems. The coated sintered body according to the conventional technique 1 has a difference in thermal expansion between the sintered body (Si 3 N 4 ) and the coating material (SiC).
Cracks will occur when used under heat cycle. Coated sintered body according to the prior art 2, Si 3 in order to approximate the thermal expansion coefficient of Si 3 N 4 sintered body in thermal expansion coefficient of SiC
A large amount of sintering aid used during the sintering of N 4 causes the strength of the sintered body to deteriorate. For the above reasons, the coated sintered body of the prior art cannot be used under the environment where the thermal cycle required when used as a structural material is applied. An object of the present invention is to prevent the deterioration of strength due to the coating of SiC and the peeling and strength deterioration of the coating film when used under a thermal cycle, and the oxidation resistance and wear resistance of the SiC film coated with excellent adhesiveness. To provide a coated sintered body having:

【0004】[0004]

【課題を解決するための手段】その手段は、SiC/
(SiC+Si3 4 )重量比が0.1〜0.5のSi
3 4 −SiC複合焼結体上に、膜厚が2〜100μm
のSiCが被覆されていることを特徴とするSiC被覆
Si3 4 −SiC複合焼結体を用いることである。こ
こでSiC膜を被覆する方法としては、炭素源ガスとS
i源ガスの混合ガスを励起したガスを焼結体に接触させ
て行うCVD法(例えばプラズマCVD法、熱CVD
法、光CVD法)或いはPVD法などの被覆法を用いる
ことができるが、つきまわり性からみてCVD法が最も
好ましい。また、焼結体は、常圧焼結、ホットプレス焼
結、ガス圧焼結、HIP焼結などの何れの方法によるも
のであってもよい。
Means for Solving the Problems The means is SiC /
(SiC + Si 3 N 4 ) Si with a weight ratio of 0.1 to 0.5
The film thickness is 2 to 100 μm on the 3 N 4 —SiC composite sintered body.
SiC of is to use a SiC coated Si 3 N 4 -SiC composite sintered body characterized by being coated. Here, as a method of coating the SiC film, carbon source gas and S
A CVD method (for example, plasma CVD method, thermal CVD method) in which a gas obtained by exciting a mixed gas of i source gas is brought into contact with a sintered body.
Coating method, photo CVD method) or PVD method, but the CVD method is most preferable from the viewpoint of throwing power. Further, the sintered body may be obtained by any method such as normal pressure sintering, hot press sintering, gas pressure sintering, and HIP sintering.

【0005】[0005]

【作用】本発明で用いる焼結体は、SiC/(SiC+
Si3 4 )の重量比が0.1〜0.5のSi3 4
SiCの複合焼結体であるため熱膨張率がSiC膜の熱
膨張率に近く、膜/焼結体界面に働く残留応力による膜
の剥離や被覆焼結体の強度劣化が少ない。また、Si3
4 にSiCを複合化させることによって高強度化させ
た焼結体を用いているため、焼結助剤を大量に含有させ
て熱膨張率をSiCに合わせるような場合に生じる強度
劣化もない。更にSiC膜合成にあたっては、焼結体中
に均一分散しているSiCが気相合成の過程で、焼結体
と膜との密着性を高めるため、熱サイクルがかかるよう
な環境下に置かれても膜が剥離することがない。焼結体
のSiC/(SiC+Si3 4 )重量比が0.1に満
たない場合には、焼結体の熱膨張率と膜の熱膨張率との
差が大きくなるために膜/焼結体界面の残留応力で膜が
剥がれやすくなり、また焼結体のSiC量が少ないため
に膜の密着性も低下することから熱サイクルがかかるよ
うな環境下で使用すると膜剥離が生じやすい。逆に焼結
体のSiC/(SiC+Si3 4 )重量比が0.5よ
り大きくなると、焼結体自体の性質がSiCに近くなっ
て熱衝撃に弱くなるため、熱サイクル後の強度劣化が大
きくなる場合がある。
The sintered body used in the present invention is SiC / (SiC +
Si 3 N 4 -with a weight ratio of Si 3 N 4 of 0.1 to 0.5.
Since it is a composite sintered body of SiC, the coefficient of thermal expansion is close to the coefficient of thermal expansion of the SiC film, and there is little peeling of the film or deterioration of the strength of the coated sintered body due to residual stress acting on the interface between the film and the sintered body. Also, Si 3
Since a sintered body that has been made stronger by combining SiC with N 4 is used, there is no strength deterioration that occurs when a large amount of a sintering additive is added to adjust the thermal expansion coefficient to SiC. .. Further, when synthesizing the SiC film, the SiC uniformly dispersed in the sintered body is placed in an environment where a heat cycle is applied in order to enhance the adhesion between the sintered body and the film in the process of vapor phase synthesis. However, the film does not peel off. When the SiC / (SiC + Si 3 N 4 ) weight ratio of the sintered body is less than 0.1, the difference between the coefficient of thermal expansion of the sintered body and the coefficient of thermal expansion of the film becomes large, so that the film / sintered The film is likely to peel off due to the residual stress at the body interface, and the adhesion of the film is also reduced due to the small amount of SiC in the sintered body. Therefore, when used in an environment where a thermal cycle is applied, the film tends to peel off. On the contrary, when the SiC / (SiC + Si 3 N 4 ) weight ratio of the sintered body becomes larger than 0.5, the property of the sintered body itself becomes close to that of SiC and becomes weak against thermal shock, so that the strength deterioration after the thermal cycle is caused. It can grow.

【0006】SiCの膜厚が 2μmに満たない場合は、
膜による耐酸化性向上効果が不十分であり、100μm
を越える場合には、焼結体中のSiCによる膜密着性向
上効果以上に、膜内に蓄積された残留応力のために、被
覆焼結体が強度劣化したり、膜密着性が低下する。Si
3 4 −SiC複合焼結体の作製には、出発原料にS
i、C及びNを含む非晶質粉末を用いた場合は、出発原
料にSi3 4 、SiCの結晶質粉末を用いた場合より
さらによい密着性が得られる。出発原料にSi、C及び
Nを含む非晶質粉末を用いた場合は、焼結体中にSiC
が均一,微細に分散しやすく、焼結体中のSiCが膜密
着性に及ぼす効果がより高められるためと考えられる。
When the film thickness of SiC is less than 2 μm,
The effect of improving the oxidation resistance by the film is insufficient, 100 μm
If it exceeds, the strength of the coated sintered body is deteriorated or the film adhesiveness is deteriorated due to residual stress accumulated in the film beyond the effect of improving the film adhesiveness by SiC in the sintered body. Si
For the production of the 3 N 4 —SiC composite sintered body, S was used as the starting material.
When an amorphous powder containing i, C and N is used, better adhesion can be obtained than when a crystalline powder of Si 3 N 4 or SiC is used as a starting material. When an amorphous powder containing Si, C and N is used as a starting material, SiC is contained in the sintered body.
It is considered that this is because the particles are easily dispersed uniformly and finely, and the effect of SiC in the sintered body on the film adhesion is further enhanced.

【0007】SiC膜の合成は、原料ガス組成比(Si
源ガス/炭素源ガスモル比)0.5〜2.0,合成圧力
100〜400torr合成温度1200〜1400℃
で行うのが好ましい。原料ガス組成比、合成圧力がこの
範囲からはずれると、焼結体中のSiCの存在効果が十
分現れず焼結と膜との整合性が悪かったり、膜内に微小
ポアが生成し膜の耐酸化性が悪くなったりする場合があ
る。合成温度が1200°C未満の場合には膜中に非晶
質が顕著に生成し、1400°Cを越えると膜中にポア
が生成していずれの場合も耐酸化性が低下する。
The composition of the SiC film is based on the composition ratio of the source gas (Si
Source gas / carbon source gas molar ratio) 0.5 to 2.0, synthesis pressure 100 to 400 torr Synthesis temperature 1200 to 1400 ° C
It is preferable to carry out. If the source gas composition ratio and the synthesis pressure deviate from this range, the effect of the presence of SiC in the sintered body does not sufficiently appear, the compatibility between the sintering and the film is poor, and micropores are generated in the film to prevent the acid resistance of the film. There is a case where the chemical conversion becomes worse. When the synthesis temperature is less than 1200 ° C, amorphous is remarkably formed in the film, and when it exceeds 1400 ° C, pores are formed in the film and the oxidation resistance is lowered in any case.

【実施例】基材の出発原料としてSi、C及びNを含む
非晶質粉末(表では、Si−C−Nと表示)にY2 3
粉末8外重量%を加えて湿式混合し、乾燥後、ホットプ
レス焼結(圧力350kgf/cm2 、温度1800
℃、時間4h)を行ない各種SiC/(SiC+Si3
4 )重量比の焼結体を作製した。また、基材の出発原
料としてSi3 4 粉末(比表面積10m2 /g)、S
iC粉末(比表面積17m2 /g)とY2 3 粉末8外
重量%を湿式混合し、乾燥後、ホットプレス焼結(圧力
350kgf/cm2 、温度1800℃、時間4h)を
行ない各種SiC/(SiC+Si3 4 )重量比の焼
結体を作製した。
EXAMPLES Amorphous powder containing Si, C and N as a starting material for a base material (indicated as Si—C—N in the table) is mixed with Y 2 O 3
8% by weight of powder was added, wet-mixed, dried, and hot-press sintered (pressure 350 kgf / cm 2 , temperature 1800).
Various SiC / (SiC + Si 3)
A sintered body having a N 4 ) weight ratio was produced. In addition, as a starting material for the base material, Si 3 N 4 powder (specific surface area 10 m 2 / g), S
iC powder (specific surface area 17 m 2 / g) and Y 2 O 3 powder 8% by weight were wet mixed, dried, and then hot-press sintered (pressure 350 kgf / cm 2 , temperature 1800 ° C., time 4 h) to perform various types of SiC. A sintered body having a weight ratio of / (SiC + Si 3 N 4 ) was prepared.

【表1】 得られた焼結体を#200のダイヤミンド砥石で平面研
削加工した後、熱CVD装置の反応容器内にそれぞれ設
置した。そして表1に示した合成温度、合成圧力の条件
下に反応室内へ原料ガスSiCl4 、CH4 を表1に示
したSiCl4 /CH4 比で、また水素ガスを2.0S
LMで導入して焼結体上に1〜150μmの厚みのSi
C膜をコーティングした。
[Table 1] The obtained sintered body was subjected to surface grinding with a # 200 DIAMIND grindstone, and then placed in a reaction container of a thermal CVD apparatus. Then, under the conditions of the synthesis temperature and the synthesis pressure shown in Table 1, the raw material gases SiCl 4 and CH 4 were introduced into the reaction chamber at the SiCl 4 / CH 4 ratio shown in Table 1, and the hydrogen gas was 2.0 S.
Introduced by LM and Si with a thickness of 1 to 150 μm on the sintered body
C film was coated.

【0008】そして、これら試料に対して、スパン30
mmにて三点曲げ強度試験、大気雰囲気下1400°C
200時間の酸化テスト後の酸化増量測定、並びに大気
雰囲気下で室温〜1400°Cまでの熱サイクルを10
0回かけた後の目視による膜密着性調査及びスパン30
mmの三点曲げ強度試験を行なった結果を表2に示し
た。ここで、酸化増量とは、(酸化テスト後重量−酸化
テスト前重量)/(前表面積)と定義する。
Then, for these samples, the span 30
3-point bending strength test in mm, 1400 ° C in air
After the oxidation test for 200 hours, the oxidation weight increase measurement and the thermal cycle from room temperature to 1400 ° C in the atmosphere were performed for 10 times.
Visual inspection of film adhesion and span 30 after applying 0 times
Table 2 shows the results of the three-point bending strength test of mm. Here, the oxidation weight increase is defined as (weight after oxidation test-weight before oxidation test) / (front surface area).

【表2】 本願発明に係わる実施例は、No.1〜No.10であ
り、比較例は、No.11〜No.16である。Si3
4 −SiC複合焼結体を単独に基材のみで使用した場
合(No.14)は基材の耐酸化性が悪いため高温下で
使用した場合に強度劣化等が生じやすいが、表1に示し
た各種SiC被覆基材では多くの場合、著しい耐酸化性
向上効果が見られる。焼結体にSi3 4 を使用した被
覆焼結体(No.11)及びSiC含有量の少ないSi
3 4 −SiC複合焼結体を使用した被覆焼結体(N
o.12)は熱サイクル試験後に膜の剥離が生じてしま
う。No.11及びNo.12では膜と焼結体の熱膨張
率の差が大きいために膜/焼結体界面に大きな残留応力
が発生し、また焼結体中のSiCによる膜密着性向上効
果もない(あるいは少ない)ために、熱サイクルの過程
で膜剥離に至ったと考えられる。
[Table 2] The embodiment according to the present invention is No. 1-No. No. 10, and the comparative example is No. 11-No. Sixteen. Si 3
When the N 4 -SiC composite sintered body is used alone as the base material (No. 14), the base material has poor oxidation resistance, so that strength deterioration easily occurs when used at high temperatures. In many cases, the various SiC-coated base materials shown in (1) have a remarkable effect of improving the oxidation resistance. Coated sintered body using Si 3 N 4 (No. 11) and Si with low SiC content
Coated sintered body using 3 N 4 -SiC composite sintered body (N
o. In 12), peeling of the film occurs after the heat cycle test. No. 11 and No. In No. 12, since the difference in the coefficient of thermal expansion between the film and the sintered body is large, a large residual stress is generated at the film / sintered body interface, and there is no (or little) effect of improving the film adhesion by SiC in the sintered body. Therefore, it is considered that the film peeled off during the thermal cycle.

【0009】一方、SiCをSiC/(SiC+Si3
4 )重量比で0.1〜0.5複合化した焼結体No.
1〜10では100回の熱サイクルの後にも膜の剥離は
生じなかった。No.1〜10の中でも、No.1は熱
膨張率がSiC膜と焼結体とで比較的差が大きく、膜剥
離しやすいと考えられるが、焼結体中に均一分散してい
るSiCが膜密着性向上に寄与するために、剥離が生じ
にくくなっていると考えられる。SiC/(SiC+S
3 4 )重量比が0.5を越えた焼結体を用いた場合
(No.13)、焼結体自体が熱衝撃に弱いために、熱
サイクルの後の強度劣化が大きかったと考えられる。熱
サイクル前後の強度を考慮すると実施例No.1及びN
o.4より、SiC/(SiC+Si3 4 )重量比
は、0.2〜0.4が更に望ましい
On the other hand, SiC is replaced by SiC / (SiC + Si 3
N 4 ) 0.1 to 0.5 composite by weight ratio of sintered body No.
In Nos. 1 to 10, no peeling of the film occurred even after 100 thermal cycles. No. No. 1 among 10 No. 1 has a relatively large coefficient of thermal expansion between the SiC film and the sintered body, and it is considered that the film is easily peeled off. However, since SiC uniformly dispersed in the sintered body contributes to the improvement of the film adhesion. It is considered that peeling is less likely to occur. SiC / (SiC + S
When a sintered body having a weight ratio of i 3 N 4 ) of more than 0.5 was used (No. 13), it is considered that the sintered body itself was weak against thermal shock, so that the strength deterioration after the thermal cycle was large. Be done. Considering the strength before and after the heat cycle, the example No. 1 and N
o. 4, the SiC / (SiC + Si 3 N 4 ) weight ratio is more preferably 0.2 to 0.4.

【0010】膜厚が 1μmのNo.15は酸化テストに
おける酸化増量が大きく、膜厚不足であると考えられ
る。膜厚が150μmのNo.16では熱サイクル試験
後の膜剥離が生じており、膜が厚いために膜内に蓄積さ
れた残留応力が、焼結体中のSiCの膜密着性を高める
効果より大きくなったためと考えられる。また、試料N
o.1〜No.10の被覆膜のSiCをX線で解析した
ところ、主としてβ相が確認された。
No. 1 having a film thickness of 1 μm Sample No. 15 has a large oxidation increase in the oxidation test and is considered to have an insufficient film thickness. No. with a film thickness of 150 μm It is considered that in No. 16, film peeling occurred after the heat cycle test, and the residual stress accumulated in the film became larger than the effect of enhancing the film adhesion of SiC in the sintered body because the film was thick. Also, sample N
o. 1-No. When the SiC of the coating film of 10 was analyzed by X-ray, the β phase was mainly confirmed.

【発明の効果】上述のように本発明によれば耐酸化性が
良好で、強度劣化の少ないSiC被覆部材が得られ、実
用に際して熱サイクルのかかる環境下でも使用できるな
ど工業上有用な効果を得られるのである。
As described above, according to the present invention, an SiC coated member having good oxidation resistance and little strength deterioration can be obtained, and industrially useful effects such as being able to be used in an environment where a heat cycle is applied in practical use are obtained. You can get it.

Claims (1)

【特許請求の範囲】 【請求項1】SiC/(SiC+Si3 4 )重量比が
0.1〜0.5のSi3 4 −SiC複合焼結体上に、
膜厚が2〜100μmのSiCが被覆されていることを
特徴とするSiC被覆窒化珪素−炭化珪素複合焼結体。 【0001】
To the Claims 1] SiC / (SiC + Si 3 N 4) weight ratio on Si 3 N 4 -SiC composite sintered body of 0.1 to 0.5,
A SiC-coated silicon nitride-silicon carbide composite sintered body, which is coated with SiC having a film thickness of 2 to 100 μm. [0001]
JP3204935A 1991-07-19 1991-07-19 Sic-coated silicon nitride-silicon carbide combined sintered compact Pending JPH0524924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3204935A JPH0524924A (en) 1991-07-19 1991-07-19 Sic-coated silicon nitride-silicon carbide combined sintered compact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3204935A JPH0524924A (en) 1991-07-19 1991-07-19 Sic-coated silicon nitride-silicon carbide combined sintered compact

Publications (1)

Publication Number Publication Date
JPH0524924A true JPH0524924A (en) 1993-02-02

Family

ID=16498794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3204935A Pending JPH0524924A (en) 1991-07-19 1991-07-19 Sic-coated silicon nitride-silicon carbide combined sintered compact

Country Status (1)

Country Link
JP (1) JPH0524924A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525556A (en) * 1994-04-14 1996-06-11 The Dow Chemical Company Silicon nitride/silicon carbide composite powders

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525556A (en) * 1994-04-14 1996-06-11 The Dow Chemical Company Silicon nitride/silicon carbide composite powders
US5538675A (en) * 1994-04-14 1996-07-23 The Dow Chemical Company Method for producing silicon nitride/silicon carbide composite
US5643843A (en) * 1994-04-14 1997-07-01 The Dow Chemical Company Silicon nitride/silicon carbide composite densified materials prepared using composite powders

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