JPH0526323B2 - - Google Patents
Info
- Publication number
- JPH0526323B2 JPH0526323B2 JP1311098A JP31109889A JPH0526323B2 JP H0526323 B2 JPH0526323 B2 JP H0526323B2 JP 1311098 A JP1311098 A JP 1311098A JP 31109889 A JP31109889 A JP 31109889A JP H0526323 B2 JPH0526323 B2 JP H0526323B2
- Authority
- JP
- Japan
- Prior art keywords
- mol
- sio
- point
- metal
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 45
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 39
- 239000000654 additive Substances 0.000 claims description 27
- 230000000996 additive effect Effects 0.000 claims description 27
- 239000000919 ceramic Substances 0.000 claims description 21
- 238000010304 firing Methods 0.000 claims description 15
- 229910052573 porcelain Inorganic materials 0.000 claims description 14
- 239000003985 ceramic capacitor Substances 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 12
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 229910052791 calcium Inorganic materials 0.000 claims description 10
- 229910052712 strontium Inorganic materials 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000010586 diagram Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 6
- 229910052691 Erbium Inorganic materials 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 5
- 229910052689 Holmium Inorganic materials 0.000 claims description 5
- 229910052771 Terbium Inorganic materials 0.000 claims description 5
- 229910052775 Thulium Inorganic materials 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- 239000011701 zinc Substances 0.000 description 15
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 13
- 239000000292 calcium oxide Substances 0.000 description 13
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 13
- 239000011777 magnesium Substances 0.000 description 13
- 239000011575 calcium Substances 0.000 description 12
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 11
- 239000000395 magnesium oxide Substances 0.000 description 11
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 11
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910018068 Li 2 O Inorganic materials 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical group O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical group [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical group [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical group [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 230000001089 mineralizing effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000012257 stirred material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical group [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Description
[産業上の利用分野]
本発明は、誘電体磁器と少なくとも2つの電極
とから成る単層又は積層構造の磁器コンデンサ及
びその製造方法に関する。
[従来の技術]
従来、積層磁器コンデンサを製造する際には、
誘電体磁器原料粉末から成るグリーンシート(未
焼結磁器シート)に白金又はパラジウム等の貴金
属の導電性ペーストを所望パターンに印刷し、こ
れを複数枚積み重ねて圧着し、1300℃〜1600℃の
酸化性雰囲気中で焼結させた。これにより、誘電
体磁器と内部電極とが同時に得られる。上述の如
く、貴金属を使用すれば、酸化性雰囲気中で高温
で焼結させても目的とする内部電極を得ることが
できる。しかし、白金、パラジウム等の貴金属は
高価であるため、必然的に積層磁器コンデンサが
コスト高になつた。
上述の問題を解決することができるものとし
て、本件出願人に係わる特公昭61−14607号公報
には、
(Bak-xMx)OkTiO2(但し、MはMg及びZnの
内の少なくとも1種)から成る基本成分と、
LiO2とSiO2とから成る添加成分とを含む誘電体
磁器組成物が開示されている。
また、特公昭61−14608号公報には、上記の特
公昭61−14607号公報のLi2OとSiO2の代りに、
Li2OとSiO2とMO(但し、MOはBaO、CaO及び
SrOの内の少なくとも1種)とから成る添加成分
とを含む誘電体磁器組成物が開示されている。
また、特公昭6−14609号公報には、(Bak-x-y
MxLy)OkTiO2(但し、MはMg及びZnの少なく
とも1種、LはSr及びCaの内の少なくとも1種)
から成る基本成分とLi2OとSi2とから成る添加成
分とを含む誘電体磁器組成物が開示されている。
また、特公昭61−14610号公報には、上記の特
公昭61−14609号公報におけるLi2OとSiO2の代り
に、Li2OとSiO2とMO(但し、MOはBaO、CaO
及びSrOの内の少なくとも1種)とから成る添加
成分を含む誘電体磁器組成物が開示されている。
また、特公昭61−14611号公報には、(Bak-x
Mx)OkTiO2(但し、MはMg、Zn、Sr及びCaの
少なくとも1種)から成る基本成分と、B2O3と
SiO2とら成る添加成分とを含む誘導体磁器組成
物が開示されている。
また、特公昭62−1595号公報には、(Bak-xMx)
OkTiO2(但し、MはMg、Zn、Sr及びCaの内の少
なくとも1種)から成る基本成分と、B2O3と
MO(但しMOはBaO、MgO、ZnO、SrO及び
CaOの少なくとも1種)とから成る添加成分とを
含む誘導体磁器組成物が開示されている。
また、特公昭62−1596号公報には、上記の特公
昭62−1595号公報のB2O3とMOの代りに、B2O3
とSiO2とMO(但しMOはBaO、MgO、ZnO、
SrO及びCaOの内の少なくとも1種)とから成る
添加成分とを含む誘導体磁器組成物が開示されて
いる。
これらに開示されている誘電体磁器組成物は、
還元性雰囲気1200℃以下の条件の焼成で得ること
ができ、比誘電率が2000以上、静電容量の温度変
化率が−25℃〜+85℃で±10%の範囲にすること
ができるものである。
[発明が解決しようとする課題]
ところで、近年の電子回路の高密度化に伴い、
積層コンデンサの小型化の要求が非常に強く、こ
れに対応する為に、温度変化率を悪化させること
なく誘電体の非誘電率を、上記各公報に開示され
ている誘電体磁器組成物の比誘電率よりも更に増
大させることが望まれている。
そこで、本発明の目的は、非酸化性雰囲気、
1200℃以下の温度での焼成で得るものであるにも
拘らず、高い誘電率を有し、且つ広い温度範囲に
わたつて誘電率の温度変化率が小さい誘電体磁器
を備えている磁器コンデンサ及びその製造方法を
提供することにある。
[課題を解決するための手段]
上記目的を達成するための本発明は、誘電体磁
器と、前記磁器に接触している少なくとも2つの
電極とから成る磁器コンデンサにおいて、前記磁
器が100.0重量部の基本成分と0.2〜5.0重量部の添
加成分とから成り、前記基本成分が、(1−α)
{Bak-xMx)Ok(Ti1-yRy)O2-y/2}+αCaZrO3(た
だし、MはMg、Znの内の少なくとも1種の金
属、LはCa、Sr内の少なくとも1種の金属、R
はSc、Y、Gd、Dy、Ho、Er、Yb、Tb、Tm、
Luの内の少なくとも1種の金属、α、k、x、
z、yは、0.005≦α≦0.04、1.00≦k≦1.05、0
<x<0.10、0<z≦0.05、0.01≦x+z≦0.10、
0<y≦0.04を満足する数値)であり、前記添加
成分がB2O3とSiO2とMO(但し、MOはBaO、
SrO、CaO、MgO及びZnOの内の少なくとも1
種の金属酸化物)から成り、且つ前記B2O3と前
記SiO2と前記MOとの組成範囲がこれ等の組成を
モル%で示す三角図における前記B2O3が1モル
%、前記SiO2が80モル%、前記MOが19モル%の
点(A)と、前記B2O3が1モル%、前記SiO2が39モ
ル%、前記MOが60モル%の点(B)と、前記B2O3
が30モル%、前記SiO2が0モル%、前記MOが70
モル%の点(C)と、前記B2O3が90モル%、前記
SiO2が0モル%、前記MOが10モル%の点(D)と、
前記B2O3が90モル%、前記SiO2が10モル%、前
記MOが0モル%の点(E)と、前記B2O3が20モル
%、前記SiO2が80モル%、前記MOが0モル%の
点(F)とを順に結ぶ6本の直線で囲まれた領域内の
ものであるコンデンサに係わるものである。な
お、基本成分を示す組成式において、k−x−
z、x、z、k、1−y、y、2−y/2は勿論
それぞれの元素の原子数を示し、(1−α)とα
は組成式の第1項の(Bak-x-zMxLz)Ok(Ti1-y
Ry)O2-y/2と第2項のCaZrO3との割合をモルで
示すものであり、Baはバリウム、Oは酸素、Ti
はチタン、Mgはマグネシウム、Znは亜鉛、Caは
カルシウム、Srはストロンチウムである。また、
Scはスカンジウム、Yはイツトリウム、Gdはガ
ドリニウム、Dyはジスプロシウム、Hoはホロニ
ウム、Erはエルビウム、Ybはイテルビウム、Tb
はテルビウム、Tmはツリウム、Luはルテチウム
である。添加成分におけるB2O3は酸化ボロン、
SiO2は酸化けい素BaOは酸化バリウム、SrOは酸
化ストロンチウム、CaOは酸化カルシウム、
MgOは酸化マグネシウム、ZnOは酸化亜鉛であ
る。
製造方法に係わる発明は、上記の基本成分と添
加成分との混合物を用意する工程と、少なくとも
2つの電極部分を有する前記混合物の成形物を作
る工程と、前記電極部分を有する前記成形物を非
酸化性雰囲気で焼成する工程と、前記焼成で得ら
れた成形物を酸化性雰囲気で熱処理する工程とを
含む磁器コンデンサの製造方法に係わるものであ
る。
[作用効果]
上記発明の磁器コンデンサにおける誘電体磁器
を非酸化性雰囲気、1200℃以下の焼成で得ること
ができる。従つて、ニツケル等の卑金属の導電性
ペーストをグリーンシートに塗布し、グリーンシ
ートと導電性ペーストとを同時に焼成する方法に
よつて磁器コンデンサを製造することが可能にな
る。誘電体磁器の組成を本発明で特定された範囲
にすることによつて、比誘電率が3000以上、誘電
体損失tan δが2.5%以下、抵抗率ρが1×
106MΩ・cm以上であり、且つ比誘電率の温度変
化率が−55℃〜125℃で−15%〜+15%(25℃を
基準)、−25℃〜85℃で−10%〜+10%(20℃を基
準)の範囲に収まる誘電体磁器を備えたコンデン
サを提供することができる。
[実施例]
次に、本発明に従う実施例及び比較例について
説明する。
まず、本発明に従う基本成分の組成式
(1−α){(Bak-x-zMxLz)Ok(Ti1-yRy)
O2-y/2}+αCaZrO3
における第1項の(Bak-x-zMxLz)Ok(Ti1-yRy)
O2-y/2(以下第1基本成分と呼ぶ)を第1表及び
第2表の試料No.1のk−x−z、x、z、x+
z、y、kの欄に示す割合で得るため、換言すれ
ば、(Ba0.96M0.04L0.02)O1.02(Ti0.99R0.01)O1.995
、
更に詳細には、M0.04=Mg0.02Zn0.02、L0.02=
Ca0.01Sr0.01及びR0.01=Yb0.01であるので、(Ba0.96
Mg0.02Zn0.02Ca0.01Sr0.01)O1.02(Ti0.99Yb0.01)
O1.995を得るために、純度99.0%以上のBaCO3(炭
酸バリウム)、MgO(酸化マグネシウム)、ZnO
(酸化亜鉛)、CaO(酸化カルシウム)、SrO(酸化
ストメンチウム)及びTiO2(酸化チタン)、
Yb2O3(酸化イツテルビウム)を用意し、不純物
を目方に入れないで
BaCO3:1044.06g(0.96モル部相当)
MgO:4.43g(0.02モル部相当)
ZnO:8.95g(0.02モル部相当)
CaO:3.08g(0.01モル部相当)
SrO:5.70g(0.01モル部相当)
TiO2:435.06g(0.99モル部相当)
Yb2O3:10.84g(0.005モル部相当)を秤量した。
次に、秤量されたこれ等の原料をポツトミル
(pot mill)に入れ、更にアルミナボールと水2.5
とを入れ、15時間湿式撹拌した後、撹拌物をス
テンレスポツトに入れて熱風式乾燥器で150℃、
4時間乾燥した。次にこの乾燥物を粗粉砕し、こ
の粗粉砕物をトンネル炉にて大気中で1200℃、2
時間仮焼し、上記組成式の第1基本成分を得た。
また、基本成分の組成式の第2項のCaZrO3(以
下、第2基本成分と呼ぶ)を得るために、
CaCO3(炭酸カルシウム)とZrO2(酸化ジルコニ
ウム)とが等モルとなる様に前者を448.96g、後
者を551.04gをそれぞれ秤量し、これ等を混合
し、乾燥し、粉砕した後に、約1250℃で2時間大
気中で仮焼した。
つぎに、第1表の試料No.1に示すように1−α
が0.98モル、αが0.02モルとなるように、98モル
部(984.34g)の第1基本成分(Ba0.96Mg0.02
Zn0.02Ca0.01Sr0.01)O1.02(Ti0.99Yb0.01)O1.995の
粉
末と、2モル部(15.66g)の第2基本成分
(CaZrO3)の粉末とを混合して1000gの基本成分
を得た。
一方、第3表の試料No.1の添加成分を得るため
に、B2O3を1.03g(1モル)と、SiO2を70.57g
(80モル部)と、BaCO3を11.03g(3.8モル部)
と、CaCO3を13.99g(9.5モル部)と、MgOを
3.38g(5.7モル部)とをそれぞれ秤量し、この
混合物にアルコールを300c.c.加え、ポリエチレン
ポツトにてアルミナボールを用いて10時間撹拌し
た後、大気中1000℃で2時間仮焼成し、これを
300c.c.の水と共にアルミナポツトに入れ、アルミ
ナボール15時間粉砕し、しかる後、150℃で4時
間乾燥させてB2O3が1モル%、SiO2が80モル%、
MOが19モル%(BaO3.8モル%+CaO9.5モル%
+MgO5.7モル%)の組成の添加成分の粉末を得
た。なお、MOの内容であるBaOとCaOとMgO
との割合は第3表に示すように20モル%、50モル
%、30モル%となる。
次に、100重量部(1000g)の基本成分に2重
量部(20g)の添加成分を添加し、更に、アクリ
ル酸エステルポリマー、グリセリン、縮合リン酸
塩の水溶液から成る有機バインダを基本成分と添
加成分との合計重量に対して15重量%添加し、更
に、50重量%の水を加え、これ等をボールミルに
入れて粉砕及び混合して磁器原料のスラリーを作
製した。
次に、上記スラリーを真空脱泡機に入れて脱泡
し、このスラリーをリバースロールコータに入
れ、ここから得られる薄膜成形物を長尺なポリエ
ステルフイルム上に連続して受け取ると共に、同
フイルム上でこれを100℃に加熱して乾燥させ、
厚さ約25μmの未焼結磁器シートを得た。このシ
ートは長尺なものであるが、これを10cm角の正方
形に裁断して使用する。
一方、内部電極用の導電ペーストは、粒径平均
1.5μmのニツケル粉末10gと、エチルセルロース
0.9gをブチルカルビトール9.1gに溶解させたも
のとを撹拌器に入れ、10時間撹拌することにより
得た。この導電ペーストを長さ14mm、幅7mmのパ
ターンを50個有するスクリーンを介して上記未焼
結磁器シートの片側に印刷した後、これを乾燥さ
せた。
次に、上記印刷面を上にして未焼結磁器シート
を2枚積層した。この際、隣接する上下のシート
において、その印刷面がパターンの長手方向に約
半分程ずれるように配置した。更に、この積層物
の上下両面にそれぞれ4枚ずつ厚さ60μmの未結
磁器シートを積層した。次いで、この積層物を約
50℃の温度で厚さ方向に約40トンの荷重を加えて
圧着させた。しかる後、この積層物を格子状に裁
断し、50個の積層チツプを得た。
次に、この積層体を雰囲気焼成が可能な炉に入
れ、大気雰囲気中で100℃/hの速度で600℃まで
昇温して、有機バインダを燃焼させた。しかる
後、炉の雰囲気を大気からH2(2体積%)+N2
(98体積%)の雰囲気に変えた。そして、炉を上
述の如き還元性雰囲気とした状態を保つて、積層
対加熱温度を600℃から焼結温度の1130℃まで、
100℃/hの速度で昇温して1130℃(最高温度)
を3時間保持した後、100℃/hの速度で600℃ま
で降温し、雰囲気を大気雰囲気(酸化性雰囲気)
におきかえて、600℃を30分間保持して酸化処理
を行い、その後、室温まで冷却して積層焼結対チ
ツプを作製した。
次に、第1図に示す積層磁器コンデンサ10を
得るために、3つの誘電体磁器層12と2つの内
部電極14とから成る積層焼結体チツプ15に一
対の外部電極16を形成した。なお、外部電極1
6は、電極が露出する焼結体チツプ15の側面に
亜鉛とガラスフリツト(glass frit)とビヒクル
(vehicle)とから成る導電性ペーストを塗布して
乾燥し、これを大気中で550℃の温度で15分間焼
付け、亜鉛電極層18を形成し、更にこの上に無
電解メツキで法で銅層20を形成し、更にこの上
に電気メツキ法でPb−Sn半田層22を設けたも
のから成る。
このコンデンサ10の誘電体磁器層12の厚さ
は0.02mm、一対の内部電極14の対向面積は5mm
×5mm=25mm2である。なお、焼結後の磁器層12
の組成は、焼結前の基本成分と添加成分との混合
組成と実質的に同じである。
次に、コンデンサ10の電気的特性を測定し、
その平均値を求めたところ、第3表に示す如く、
比誘電率εsが3700、tan δが1.1%、抵抗率ρが
3.8×106MΩ・cm、25℃の静電容量を基準にした
−55℃及び+125℃の静電容量の変化率ΔC-55、
ΔC125が−10.2%、+4.3%、20℃の静電容量を基
準にした−25℃、+85℃の静電容量の変化率
ΔC-25、ΔC85は−7.1%、−3.6%であつた。
なお、電気的特性は次の要領で測定した。
(A) 比誘電率εsは、温度20℃、周波数1kHz、電圧
(実効値)1.0Vの条件で静電容量を測定し、こ
の測定値一対の内部電極14の対向面積25mm2と
一対の内部電極14間の磁器層12の厚さ0.02
mmから計算で求めた。
(B) 誘電体損失tan δ(%)は比誘電率と同一条
件で測定した。
(C) 抵抗率ρ(MΩ・cm)は、温度20℃において
DC100Vを1分間印加した後に一対の外部電極
16間の抵抗値を測定し、この測定値と寸法と
に基づいて計算で求めた。
(D) 静電容量の温度特性は、恒温槽の中に試料を
入れ、−55℃、−25℃、0℃、+20℃、+40℃、+
60℃、+85℃、+105℃、+125℃の各温度におい
て、周波数1kHz、電圧(実効値)1.0Vの条件
で静電容量を測定し、20℃及び25℃の時の静電
容量に対する各温度における変化率を求めるこ
とによつて得た。
以上、試料No.1の作製方法及びその特性につい
て述べたが、試料No.2〜126についても、基本成
分及び添加成分の組成、これ等の割合、及び還元
性雰囲気での焼成温度を第1表〜第4表に示すよ
うに変えた他は、試料No.1と全く同一の方法で積
層磁器コンデンサを作製し、同一方法で電気的特
性を測定した。
第1表には、基本成分を示す組成式における
(1−α)とαとk−x−zとxとzとx+zが
示され、xの欄のMg、Znは一般式のMの内容を
示し、Mg、Znの欄にはこれ等の原子数が示さ
れ、合計の欄にはこれ等の合計値(x値)が示さ
れ、zの欄のCa、Srは一般式のLの内容を示し、
Ca、Srの欄にはこれ等の原子数が示され、合計
の欄にはこれ等の合計値(z値)が示されてい
る。
第2表には基本成分を示す組成式におけるRの
内容と量及びkの値が示されている。即ち、yの
欄のSe、Y、Gd、Dy、Ho、Er、Ybは一般式の
Rの内容を示し、これ等の欄にはこれ等の原子数
が示され、合計の欄にはこれ等の合計値(y値)
が示されている。
第3表にはそれぞれの試料の添加成分の添加量
及び組成が示されている。添加成分の添加量は基
本成分100重量部に対する重量部で示されている。
第3表の添加成分のMOの内容の欄には、BaO、
MgO、ZnO、SrO、CaOの割合がモル%で示さ
れている。
第4表は各試料の焼成温度及び電気的特性を示
す。この第4表において、静電容量の温度特性
は、25℃の静電容量を基準した−55℃及び+125
℃の静電容量変化率ΔC-55(%)及びΔC125(%)
と、20℃の静電容量を基準した−25℃及び+85℃
の静電容量変化率ΔC-25(%)及びΔC85(%)とで
示されている。
[Industrial Field of Application] The present invention relates to a ceramic capacitor having a single-layer or laminated structure consisting of dielectric ceramic and at least two electrodes, and a method for manufacturing the same. [Conventional technology] Conventionally, when manufacturing multilayer ceramic capacitors,
A conductive paste of noble metals such as platinum or palladium is printed in a desired pattern on a green sheet (unsintered porcelain sheet) made of dielectric porcelain raw material powder, multiple sheets are stacked and pressed together, and oxidized at 1300°C to 1600°C. sintered in a neutral atmosphere. Thereby, the dielectric ceramic and the internal electrode can be obtained at the same time. As mentioned above, if a noble metal is used, the intended internal electrode can be obtained even if it is sintered at high temperature in an oxidizing atmosphere. However, since precious metals such as platinum and palladium are expensive, the cost of multilayer ceramic capacitors has inevitably increased. As a solution to the above-mentioned problem, Japanese Patent Publication No. 14607/1987, filed by the applicant , states that ( Bakx Mx ) OkTiO2 (where M is at least one of Mg and Zn). basic ingredients consisting of seeds);
A dielectric ceramic composition is disclosed that includes an additive component consisting of LiO 2 and SiO 2 . In addition, in Japanese Patent Publication No. 61-14608, instead of Li 2 O and SiO 2 in the above-mentioned Japanese Patent Publication No. 61-14607,
Li 2 O, SiO 2 and MO (however, MO is BaO, CaO and
A dielectric ceramic composition containing an additive component consisting of at least one type of SrO is disclosed. In addition, in Special Publication No. 6-14609, (Ba kxy
M x L y ) O k TiO 2 (M is at least one of Mg and Zn, L is at least one of Sr and Ca)
A dielectric ceramic composition is disclosed that includes a basic component consisting of Li 2 O and an additive component consisting of Li 2 O and Si 2 . In addition, in Japanese Patent Publication No. 61-14610, instead of Li 2 O and SiO 2 in the above-mentioned Japanese Patent Publication No. 61-14609, Li 2 O, SiO 2 and MO (however, MO is BaO, CaO
and at least one of SrO) is disclosed. In addition, in Special Publication No. 61-14611, (Ba kx
M x )O k TiO 2 (where M is at least one of Mg, Zn, Sr, and Ca) and B 2 O
A dielectric ceramic composition is disclosed that includes an additive component consisting of SiO 2 . In addition, in Special Publication No. 1595/1983, (Ba kx M x )
A basic component consisting of O k TiO 2 (where M is at least one of Mg, Zn, Sr, and Ca), and B 2 O 3 .
MO (However, MO is BaO, MgO, ZnO, SrO and
A dielectric ceramic composition is disclosed that includes an additive component consisting of at least one type of CaO. In addition, in Japanese Patent Publication No. 62-1596, instead of B 2 O 3 and MO in the above-mentioned Japanese Patent Publication No. 62-1595, B 2 O 3
and SiO 2 and MO (however, MO is BaO, MgO, ZnO,
A dielectric ceramic composition is disclosed that includes an additive component consisting of at least one of SrO and CaO. The dielectric ceramic compositions disclosed in these are:
It can be obtained by firing in a reducing atmosphere of 1200℃ or less, has a dielectric constant of 2000 or more, and can have a temperature change rate of capacitance of ±10% from -25℃ to +85℃. be. [Problem to be solved by the invention] By the way, with the recent increase in the density of electronic circuits,
There is a strong demand for miniaturization of multilayer capacitors, and in order to meet this demand, we have improved the non-permittivity of the dielectric material to the ratio of the dielectric ceramic compositions disclosed in the above publications without worsening the rate of temperature change. It is desired to further increase the dielectric constant. Therefore, the purpose of the present invention is to provide a non-oxidizing atmosphere,
Porcelain capacitors equipped with dielectric porcelain that has a high dielectric constant and a small rate of change in dielectric constant over a wide temperature range, even though it is obtained by firing at a temperature of 1200°C or lower. The object of the present invention is to provide a manufacturing method thereof. [Means for Solving the Problems] To achieve the above object, the present invention provides a ceramic capacitor comprising a dielectric ceramic and at least two electrodes in contact with the ceramic, in which the ceramic is 100.0 parts by weight. It consists of a basic component and 0.2 to 5.0 parts by weight of additional components, and the basic component is (1-α)
{ Ba kx M _ _ _ 1 type of metal, R
are Sc, Y, Gd, Dy, Ho, Er, Yb, Tb, Tm,
At least one metal of Lu, α, k, x,
z, y are 0.005≦α≦0.04, 1.00≦k≦1.05, 0
<x<0.10, 0<z≦0.05, 0.01≦x+z≦0.10,
0<y≦0.04), and the additive components are B 2 O 3 , SiO 2 and MO (however, MO is BaO,
At least one of SrO, CaO, MgO and ZnO
and the composition range of the B 2 O 3 , the SiO 2 and the MO is 1 mol % of the B 2 O 3 in the triangular diagram showing these compositions in mol %, A point (A) where SiO 2 is 80 mol% and the MO is 19 mol%, and a point (B) where the B 2 O 3 is 1 mol%, the SiO 2 is 39 mol%, and the MO is 60 mol%. , said B 2 O 3
is 30 mol%, the SiO 2 is 0 mol%, and the MO is 70 mol%.
Point (C) of mol %, the above B 2 O 3 is 90 mol %, the above
A point (D) where SiO 2 is 0 mol % and the MO is 10 mol %,
A point ( E ) where the B 2 O 3 is 90 mol %, the SiO 2 is 10 mol % , and the MO is 0 mol %; This relates to a capacitor within a region surrounded by six straight lines sequentially connecting the point (F) where MO is 0 mol %. In addition, in the composition formula showing the basic components, k-x-
z, x, z, k, 1-y, y, 2-y/2 of course indicate the number of atoms of each element, and (1-α) and α
is the first term of the composition formula (Ba kxz M x L z )O k (Ti 1-y
R y ) indicates the ratio of O 2-y/2 and the second term CaZrO 3 in moles, where Ba is barium, O is oxygen, and Ti
is titanium, Mg is magnesium, Zn is zinc, Ca is calcium, and Sr is strontium. Also,
Sc is scandium, Y is yttrium, Gd is gadolinium, Dy is dysprosium, Ho is holonium, Er is erbium, Yb is iterbium, Tb
is terbium, Tm is thulium, and Lu is lutetium. B 2 O 3 in the additive component is boron oxide,
SiO 2 is silicon oxide, BaO is barium oxide, SrO is strontium oxide, CaO is calcium oxide,
MgO is magnesium oxide and ZnO is zinc oxide. The invention related to the manufacturing method includes the steps of: preparing a mixture of the above-mentioned basic components and additive components; making a molded product of the mixture having at least two electrode parts; and non-containing the molded product having the electrode parts. The present invention relates to a method for manufacturing a ceramic capacitor, which includes a step of firing in an oxidizing atmosphere and a step of heat-treating a molded product obtained by the firing in an oxidizing atmosphere. [Operation and Effect] The dielectric ceramic in the ceramic capacitor of the above invention can be obtained by firing in a non-oxidizing atmosphere at 1200°C or lower. Therefore, it becomes possible to manufacture a ceramic capacitor by applying a conductive paste of a base metal such as nickel to a green sheet and firing the green sheet and the conductive paste simultaneously. By setting the composition of the dielectric ceramic within the range specified in the present invention, the relative dielectric constant is 3000 or more, the dielectric loss tan δ is 2.5% or less, and the resistivity ρ is 1×
10 6 MΩ・cm or more, and the temperature change rate of relative permittivity is -15% to +15% (based on 25°C) from -55°C to 125°C, and -10% to +10 from -25°C to 85°C. % (based on 20°C), we can provide capacitors with dielectric ceramics that fall within the range of 20℃. [Examples] Next, Examples and Comparative Examples according to the present invention will be described. First, the compositional formula of the basic components according to the present invention (1-α) {(Ba kxz M x L z )O k (Ti 1-y R y )
(Ba kxz M x L z )O k (Ti 1-y R y ) of the first term in O 2-y/2 } +αCaZrO 3
O 2-y/2 (hereinafter referred to as the first basic component) is k-x-z, x, z, x+ of sample No. 1 in Tables 1 and 2.
In other words, (Ba 0.96 M 0.04 L 0.02 ) O 1.02 (Ti 0.99 R 0.01 ) O 1.995
,
More specifically, M 0.04 = Mg 0.02 Zn 0.02 , L 0.02 =
Since Ca 0.01 Sr 0.01 and R 0.01 = Yb 0.01 , (Ba 0.96
Mg 0.02 Zn 0.02 Ca 0.01 Sr 0.01 ) O 1.02 (Ti 0.99 Yb 0.01 )
BaCO3 (barium carbonate), MgO (magnesium oxide), ZnO with a purity of 99.0% or more to obtain O 1.995
(zinc oxide), CaO (calcium oxide), SrO (stmentium oxide) and TiO 2 (titanium oxide),
Prepare Yb 2 O 3 (ytterbium oxide) and add it without adding any impurities . Equivalent) CaO: 3.08 g (equivalent to 0.01 mole part) SrO: 5.70 g (equivalent to 0.01 mole part) TiO 2 : 435.06 g (equivalent to 0.99 mole part) Yb 2 O 3 : 10.84 g (equivalent to 0.005 mole part) were weighed. Next, put these weighed raw materials into a pot mill, add an alumina ball and 2.5 ml of water.
After wet stirring for 15 hours, the stirred material was placed in a stainless steel pot and heated to 150℃ in a hot air dryer.
It was dried for 4 hours. Next, this dried material is coarsely pulverized, and the coarsely pulverized material is heated in a tunnel furnace at 1200°C in the atmosphere for 20 minutes.
The product was calcined for a period of time to obtain the first basic component having the above compositional formula. In addition, in order to obtain CaZrO 3 (hereinafter referred to as the second basic component) in the second term of the composition formula of the basic component,
Weighed 448.96 g of the former and 551.04 g of the latter so that CaCO 3 (calcium carbonate) and ZrO 2 (zirconium oxide) were equimolar, mixed them, dried them, and crushed them, resulting in approximately 1250 g of ZrO 2 (zirconium oxide). It was calcined in air at ℃ for 2 hours. Next, as shown in sample No. 1 in Table 1, 1−α
98 mol parts (984.34 g) of the first basic component (Ba 0.96 Mg 0.02
A powder of Zn 0.02 Ca 0.01 Sr 0.01 ) O 1.02 (Ti 0.99 Yb 0.01 ) O 1.995 and 2 mole parts (15.66 g) of a powder of the second basic component (CaZrO 3 ) were mixed to obtain 1000 g of the basic component. Ta. On the other hand, in order to obtain the additive components of sample No. 1 in Table 3, 1.03 g (1 mol) of B 2 O 3 and 70.57 g of SiO 2 were added.
(80 mol parts) and 11.03 g (3.8 mol parts) of BaCO 3
, 13.99 g (9.5 mole parts) of CaCO 3 and MgO
3.38 g (5.7 mole parts) of each were weighed, 300 c.c. of alcohol was added to this mixture, stirred in a polyethylene pot using an alumina ball for 10 hours, and then pre-calcined in the air at 1000°C for 2 hours. this
The alumina balls were placed in an alumina pot with 300 c.c. of water, ground for 15 hours, and then dried at 150°C for 4 hours to form a mixture of 1 mol% B 2 O 3 and 80 mol% SiO 2 .
MO is 19 mol% (BaO3.8 mol% + CaO9.5 mol%
An additive component powder having a composition of 5.7 mol %) was obtained. In addition, the contents of MO, BaO, CaO, and MgO
As shown in Table 3, the proportions are 20 mol%, 50 mol%, and 30 mol%. Next, 2 parts by weight (20 g) of additive components are added to 100 parts by weight (1000 g) of the basic component, and an organic binder consisting of an aqueous solution of acrylic acid ester polymer, glycerin, and condensed phosphate is added to the basic component. A slurry of porcelain raw material was prepared by adding 15% by weight based on the total weight of the ingredients, and further adding 50% by weight of water, and placing them in a ball mill to grind and mix. Next, the above slurry is degassed by putting it into a vacuum defoaming machine, and this slurry is put into a reverse roll coater, and the thin film molding obtained from this is continuously received on a long polyester film, and the film is coated on the same film. Then heat this to 100℃ and dry it.
A green porcelain sheet with a thickness of about 25 μm was obtained. This sheet is long, but it is cut into 10cm squares. On the other hand, the conductive paste for internal electrodes has an average particle size of
10g of 1.5μm nickel powder and ethyl cellulose
A solution of 0.9 g dissolved in 9.1 g of butyl carbitol was placed in a stirrer and stirred for 10 hours. This conductive paste was printed on one side of the unsintered porcelain sheet through a screen having 50 patterns of 14 mm in length and 7 mm in width, and then dried. Next, two unsintered porcelain sheets were laminated with the printed surfaces facing up. At this time, the adjacent upper and lower sheets were arranged so that their printed surfaces were shifted by about half in the longitudinal direction of the pattern. Further, four unset porcelain sheets each having a thickness of 60 μm were laminated on the upper and lower surfaces of this laminate. This laminate is then approximately
A load of approximately 40 tons was applied in the thickness direction at a temperature of 50°C to bond the material. Thereafter, this laminate was cut into a grid shape to obtain 50 laminate chips. Next, this laminate was placed in a furnace capable of firing in an atmosphere, and the temperature was raised to 600° C. at a rate of 100° C./h in an air atmosphere to burn the organic binder. After that, the atmosphere of the furnace is changed from the atmosphere to H 2 (2% by volume) + N 2
(98% by volume). Then, while maintaining the reducing atmosphere in the furnace as described above, the heating temperature for lamination was increased from 600°C to the sintering temperature of 1130°C.
Raise the temperature at a rate of 100℃/h to 1130℃ (maximum temperature)
After holding for 3 hours, the temperature was lowered to 600°C at a rate of 100°C/h, and the atmosphere was changed to air (oxidizing atmosphere).
Instead, oxidation treatment was performed by holding the temperature at 600°C for 30 minutes, and then cooling to room temperature to produce a laminated sintered chip. Next, in order to obtain the multilayer ceramic capacitor 10 shown in FIG. 1, a pair of external electrodes 16 were formed on a multilayer sintered chip 15 consisting of three dielectric ceramic layers 12 and two internal electrodes 14. In addition, external electrode 1
In step 6, a conductive paste consisting of zinc, glass frit, and vehicle is applied to the side surface of the sintered chip 15 where the electrodes are exposed, dried, and then heated in the atmosphere at a temperature of 550°C. A zinc electrode layer 18 is formed by baking for 15 minutes, a copper layer 20 is formed thereon by electroless plating, and a Pb-Sn solder layer 22 is further formed on this by electroplating. The thickness of the dielectric ceramic layer 12 of this capacitor 10 is 0.02 mm, and the opposing area of a pair of internal electrodes 14 is 5 mm.
×5mm= 25mm2 . Note that the porcelain layer 12 after sintering
The composition of is substantially the same as the mixed composition of the basic components and additive components before sintering. Next, measure the electrical characteristics of the capacitor 10,
When the average value was calculated, as shown in Table 3,
The relative dielectric constant ε s is 3700, tan δ is 1.1%, and the resistivity ρ is
3.8×10 6 MΩ・cm, capacitance change rate ΔC -55 at -55℃ and +125℃ based on capacitance at 25℃,
ΔC 125 is -10.2%, +4.3%, capacitance change rate ΔC -25 at -25℃ and +85℃ based on capacitance at 20℃, ΔC 85 is -7.1%, -3.6%. It was hot. Note that the electrical characteristics were measured in the following manner. (A) The relative permittivity ε s is determined by measuring the capacitance under the conditions of temperature 20°C, frequency 1kHz, and voltage (effective value) 1.0V, and the measured value is calculated using the opposing area of 25 mm 2 of the pair of internal electrodes 14 and the pair of Thickness of porcelain layer 12 between internal electrodes 14: 0.02
Calculated from mm. (B) Dielectric loss tan δ (%) was measured under the same conditions as the relative dielectric constant. (C) Resistivity ρ (MΩ・cm) at a temperature of 20℃
After applying DC 100V for 1 minute, the resistance value between the pair of external electrodes 16 was measured, and calculated based on this measured value and the dimensions. (D) Temperature characteristics of capacitance are measured by placing the sample in a thermostatic chamber and measuring the temperature at -55℃, -25℃, 0℃, +20℃, +40℃, +
Capacitance was measured at each temperature of 60℃, +85℃, +105℃, and +125℃ under the conditions of frequency 1kHz and voltage (effective value) 1.0V, and the capacitance at each temperature at 20℃ and 25℃ was measured. It was obtained by finding the rate of change in . The preparation method and characteristics of sample No. 1 have been described above, but for samples No. 2 to 126, the composition of the basic components and additive components, their ratios, and the firing temperature in a reducing atmosphere were A multilayer ceramic capacitor was produced in exactly the same manner as Sample No. 1, except for the changes shown in Tables 4 to 4, and its electrical characteristics were measured in the same manner. Table 1 shows (1-α), α, k-x-z, x, z, and x+z in the compositional formula showing the basic components, and Mg and Zn in the x column are the contents of M in the general formula. The numbers of these atoms are shown in the Mg and Zn columns, the total value (x value) of these is shown in the total column, and Ca and Sr in the z column are the numbers of L in the general formula. indicate the content,
The Ca and Sr columns show the numbers of these atoms, and the total column shows their total value (z value). Table 2 shows the content and amount of R and the value of k in the compositional formula showing the basic components. In other words, Se, Y, Gd, Dy, Ho, Er, and Yb in the y column indicate the contents of R in the general formula, the numbers of these atoms are shown in these columns, and these are shown in the total column. etc. total value (y value)
It is shown. Table 3 shows the amounts and compositions of the additive components for each sample. The amount of the additive component added is shown in parts by weight based on 100 parts by weight of the basic component.
In Table 3, the MO content column for additive components includes BaO,
The proportions of MgO, ZnO, SrO, and CaO are shown in mol%. Table 4 shows the firing temperature and electrical properties of each sample. In this Table 4, the temperature characteristics of capacitance are -55℃ and +125℃ based on 25℃ capacitance.
Capacitance change rate in °C ΔC -55 (%) and ΔC 125 (%)
and -25℃ and +85℃ based on 20℃ capacitance
The rate of change in capacitance is expressed as ΔC -25 (%) and ΔC 85 (%).
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【表】
第1表〜第4表から明らかな如く、本発明に従
う試料では、非酸化性雰囲気、1200℃以下の焼成
で、非誘電率εsが3000以上、誘電体損失tan δが
2.5%以下、抵抗率ρが1×106MΩ・cm以上、静
電容量の温度変化率ΔC-55及びΔC125が−15%〜
+15%、ΔC-25及びΔC85は−10%〜+10%の範囲
となり、所望特性のコンデンサを得ることが出来
る。一方、試料No.11〜13、38、43、44、49、50、
54、55、59、60、68〜71、77、81、82、86、91、
94、97、100、103、106、109、114、126では本発
明の目的を達成することができない。従つて、こ
れ等は本発明の範囲外のものである。
第4表にはΔC-55、ΔC125、ΔC-25、ΔC85のみ
が示されているが、本発明の範囲に属する試料の
−25℃〜+85℃の範囲の種々の静電へ量の変化率
ΔCは、−10%〜+10%の範囲に収まり、また、−
55℃〜+125℃の範囲の種々の静電容量の変化率
ΔCは、−15%〜+15%の範囲に収まつている。
次に、組成の限定理由について述べる。
x+zの値が、試料No.60に示す如く、零の場合
には、ΔC-25が−10%〜+10%の範囲外となる
が、試料No.61、62、63に示す如く、x+zの値が
0.01の場合には、所望の電気的特性を得ることが
できる。従つて、x+zの値の下限は0.01であ
る。一方、試料No.69、70に示す如く、x+zの値
が0.12の場合には、ΔC85が−10%〜+10%の範囲
外となるが、試料No.76に示す如く、x+zの値が
0.10の場合には、所望の電気的特性を得ることが
できる。但し、x+zの値が試料No.68、71に示す
如く、0.07であつてもzの値が0.05を越えてしま
う場合には所望の電気的特性が得られない。従つ
て、x+zの上限値は0.10であるが、同時にzの
上限値は0.05にしなければならない。なお、M成
分のMgとZn及びL成分のCaとSrはほぼ同様に
働き、0<x<0.10を満足する範囲でMgとZnの
内の一方又は両方を使用すること、また0<z≦
0.05を満足する範囲でCaとSrの内の一方又は両
方を使用することができる。そして、M成分及び
L成分の1種又は複数種の何れの場合においても
x+zの値を0.01〜0.10の範囲にすることが望ま
しい。
yの値が、試料No.91、94、97、100、103、106、
109、114、126に示す如く、0.06の場合には緻密
な焼結体が得られないが、試料No.90、93、96、
99、102、105、108等に示す如く、yの値が0.04
の場合には所望の電気的特性を得ることができ
る。従つて、yの値の上限は0.04である。なお、
R成分のSc、Y、Dy、Ho、Er、Ybはほぼ同様
に働き、これ等から選択された1つを使用して
も、又は複数を使用しても同様な結果が得られ
る。そして、R成分が1種又は複数種のいずれの
場合に於いてもyの値を0.04以下の範囲にするこ
とが望ましい。また、yは0.04以下であれば、0
に近い微量であつてもそれなりの効果がある。な
お、組成式でRで示す成分は、静電容量の温度特
性の改善に寄与する。即ち、R成分の添加によつ
て−55℃〜125℃の範囲での静電容量の温度変化
率ΔC-55〜ΔC125を−15%〜+15%の範囲に容易
に収めることが可能になると共に、−25℃〜85℃
の範囲での静電容量の温度変化率ΔC-25〜ΔC85−
10%〜+10%の範囲に容易に収めることが可能に
なり、且つ各温度範囲における静電容量の温度変
化率の変動幅を小さくすることができる。また、
R成分は抵抗率ρを大きくする作用及び焼結性を
高める作用を有する。
αの値が試料No.50、55に示す如く、零の場合に
は、ΔC-25が−10%〜+10%の範囲外、ΔC-55が
−15%〜+15%の範囲外となるが、試料No.51、56
に示す如く、αの値が0.005の場合には、所望の
電気的特性を得ることができる。従つて、αの値
の下限は0.05である。一方、試料No.54、59に示す
如くαの値が0.05の場合には、ΔC85が−10%〜+
10%の範囲外となるが、試料No.53、58に示す如
く、αの値が0.04の場合には所望の電気的特性を
得ることができる。従つて、αの値の上限は0.04
である。
kの値が、試料No.77、82に示す如く、1.0より
も小さい場合には、ρが1×106MΩ・cm未満と
なり、大幅に低くなるが、試料No.78、83に示す如
く、kの値が1.00の場合には、所望の電気的特性
が得られる。従つて、kの値の下限は1.00であ
る。一方、kの値が、試料No.81、86に示す如く、
1.05より大きい場合には緻密な焼結体が得られな
いが、試料No.80、85に示す如く、kの値が1.05の
場合には所望の電気的特性が得られる。従つて、
kの値の上限は1.05である。
添加成分の添加量が零の場合には、試料No.38、
44から明らかな如く、焼成温度が1250℃であつて
も緻密な焼結体が得られないが、試料No.39、45に
示す如く、添加量が100重量部の基本成分に対し
て0.2重量部の場合には、1170℃の焼成で所望の
電気的特性を有する焼結体が得られる。従つて、
添加成分の下限は0.2重量部である。一方、試料
No.43、49に示す如く、添加成分の添加量が7.0重
量部の場合には、εsが300未満となり、更にΔC85
が−10%〜+10%の範囲外となるか、又はΔC-55
が−15%〜−15%の範囲外となるが、試料No.42、
48に示す如く、添加量が5.0重量部の場合には所
望特性を得ることができる。従つて、添加量の上
限は5.0重量部である。
添加成分の好ましい組成は、第2図のB2O3−
SiO2−MOの組成比を示す三角図に基づいて決定
することができる。三角図の第1の点(A)は、試料
No.1のB2O3が1モル%、SiO2が80モル%、MO
が19モル%の組成を示し、第2の点(B)は、試料No.
2のB2O3が1モル%、SiO2が39モル%、MOが
60モル%の組成を示し、第3の点(C)は、試料No.3
のB2O3が30モル%、SiO2が0モル%、MOが70
モル%の組成を示し、第4の点(D)は、試料No.4の
B2O3が90モル%、SiO2が0モル%、MOが10モ
ル%の組成を示し、第5の点(E)は、試料No.5の
B2O3が90モル%、SiO2が10モル%、MOが0モ
ル%の組成を示し、第6の点(F)は、試料No.6の
B2O3が20モル%、SiO2が80モル%、MOが0モ
ル%の組成を示す。
本発明の範囲に属する試料の添加成分の組成は
三角図の第1〜6の点(A)〜(F)を順に結ぶ6本の直
線で囲まれた領域内の組成になつている。この領
域内の組成とすれば、所望の電気的特性を得るこ
とができる。一方、試料No.11〜13のように、添加
成分の組成が本発明で特定した範囲外となれば、
緻密な焼結体を得ることができない。なお、MO
成分は例えば試料No.14〜18に示す如くBaO、
MgO、ZnO、SrO、CaOのいずれか1つであつ
てもよいし、又は他の試料で示すように適当な比
率としてもよい。
[変形例]
以上、本発明の実施例について述べたが、本発
明はこれに限定されるものではなく、例えば次の
変形例が可能なものである。
(a) 基本成分の中に、本発明の目的を阻害しない
範囲で微量のMnO2(好ましくは0.05〜0.1重量
%)等の鉱化剤を添加し、焼結性を向上させて
もよい。また、その他の物質を必要に応じて添
加してもよい。
(b) 出発原料を、実施例で示したもの以外の酸化
物又は水酸化物又はその他の化合物としてもよ
い。
(c) 焼成時の非酸化性雰囲気での処理の後の酸化
性雰囲気での処理の温度を600℃以外の焼結温
度よりも低い温度(好ましくは500℃〜1000℃
の範囲)としてもよい。即ち、ニツケル等の電
極材料と磁器の酸化とを考慮して種々変更する
ことが可能である。
(d) 非酸化性雰囲気中の焼成温度を、電極材料を
考慮して種々変えることができる。ニツケルを
内部電極とする場合には、1050℃〜1200℃の範
囲でニツケル粒子の凝集がほとんど生じない。
(e) 焼結を中性雰囲気で行つてもよい。
(f) 積層磁器コンデンサ以外の一般的な単層の磁
器コンデンサにも勿論適用可能である。
(g) 組成式におけるR成分の中のTb、Tm、Lu
については特に第1表〜第4表に掲載されてい
ないが、R成分の他のものと同様に使用するこ
とができることが確認されている。[Table] As is clear from Tables 1 to 4, the samples according to the present invention have a dielectric constant ε s of 3000 or more and a dielectric loss tan δ when fired in a non-oxidizing atmosphere at 1200°C or lower.
2.5% or less, resistivity ρ is 1×10 6 MΩ・cm or more, temperature change rate of capacitance ΔC -55 and ΔC 125 is -15% ~
+15%, ΔC -25 and ΔC 85 are in the range of -10% to +10%, making it possible to obtain a capacitor with desired characteristics. On the other hand, sample Nos. 11 to 13, 38, 43, 44, 49, 50,
54, 55, 59, 60, 68-71, 77, 81, 82, 86, 91,
94, 97, 100, 103, 106, 109, 114, and 126 cannot achieve the object of the present invention. Therefore, these are outside the scope of the present invention. Although only ΔC -55 , ΔC 125 , ΔC -25 and ΔC 85 are shown in Table 4, various electrostatic charges in the range of -25°C to +85°C for samples belonging to the scope of the present invention are shown. The rate of change ΔC falls within the range of -10% to +10%, and -
The various capacitance change rates ΔC in the range of 55° C. to +125° C. are in the range of −15% to +15%. Next, the reasons for limiting the composition will be described. When the value of x+z is zero, as shown in sample No. 60, ΔC -25 is outside the range of -10% to +10%, but as shown in sample Nos. 61, 62, and 63, the value of x+z value
In the case of 0.01, desired electrical characteristics can be obtained. Therefore, the lower limit of the value of x+z is 0.01. On the other hand, as shown in sample No. 69 and 70, when the value of x+z is 0.12, ΔC 85 is outside the range of -10% to +10%, but as shown in sample No. 76, when the value of x+z is
In the case of 0.10, desired electrical characteristics can be obtained. However, as shown in sample Nos. 68 and 71, even if the value of x+z is 0.07, if the value of z exceeds 0.05, the desired electrical characteristics cannot be obtained. Therefore, the upper limit of x+z is 0.10, but at the same time the upper limit of z must be 0.05. In addition, Mg and Zn of the M component and Ca and Sr of the L component work almost in the same way, and one or both of Mg and Zn should be used within the range that satisfies 0<x<0.10, and 0<z≦
One or both of Ca and Sr can be used within a range that satisfies 0.05. It is desirable that the value of x+z be in the range of 0.01 to 0.10 in either case of one or more of the M component and the L component. The value of y is sample No. 91, 94, 97, 100, 103, 106,
As shown in samples No. 109, 114, and 126, a dense sintered body cannot be obtained in the case of 0.06, but sample Nos. 90, 93, 96,
99, 102, 105, 108 etc., the value of y is 0.04
In this case, desired electrical characteristics can be obtained. Therefore, the upper limit of the value of y is 0.04. In addition,
The R components Sc, Y, Dy, Ho, Er, and Yb work almost in the same way, and the same result can be obtained even if one selected from these or a plurality of them are used. In addition, it is desirable that the value of y be in the range of 0.04 or less, regardless of whether there is one type of R component or multiple types of R components. Also, if y is 0.04 or less, 0
Even small amounts close to 100% have certain effects. Note that the component represented by R in the compositional formula contributes to improving the temperature characteristics of capacitance. That is, by adding the R component, it becomes possible to easily keep the temperature change rate of capacitance ΔC -55 to ΔC 125 in the range of -55°C to 125°C within the range of -15% to +15%. with -25℃~85℃
Temperature change rate of capacitance in the range ΔC -25 to ΔC 85 −
It becomes possible to easily keep the capacitance within the range of 10% to +10%, and the fluctuation width of the temperature change rate of capacitance in each temperature range can be made small. Also,
The R component has the function of increasing the resistivity ρ and the function of increasing sinterability. If the value of α is zero, as shown in samples No. 50 and 55, ΔC -25 will be outside the range of -10% to +10%, and ΔC -55 will be outside the range of -15% to +15%. , Sample No. 51, 56
As shown in the figure, when the value of α is 0.005, desired electrical characteristics can be obtained. Therefore, the lower limit of the value of α is 0.05. On the other hand, when the value of α is 0.05 as shown in samples No. 54 and 59, ΔC 85 varies from −10% to +
Although it is outside the range of 10%, desired electrical characteristics can be obtained when the value of α is 0.04, as shown in Sample Nos. 53 and 58. Therefore, the upper limit of the value of α is 0.04
It is. When the value of k is smaller than 1.0, as shown in Samples No. 77 and 82, ρ becomes less than 1×10 6 MΩ・cm, which is significantly lower, but as shown in Samples No. 78 and 83, , k is 1.00, desired electrical characteristics can be obtained. Therefore, the lower limit of the value of k is 1.00. On the other hand, the value of k is as shown in sample Nos. 81 and 86,
When the value of k is greater than 1.05, a dense sintered body cannot be obtained, but as shown in sample Nos. 80 and 85, when the value of k is 1.05, desired electrical characteristics can be obtained. Therefore,
The upper limit of the value of k is 1.05. If the amount of additive components added is zero, sample No. 38,
As is clear from No. 44, a dense sintered body cannot be obtained even when the firing temperature is 1250°C, but as shown in Samples No. 39 and 45, the addition amount is 0.2 parts by weight per 100 parts by weight of the basic component. In this case, a sintered body with desired electrical properties can be obtained by firing at 1170°C. Therefore,
The lower limit of additive components is 0.2 parts by weight. On the other hand, the sample
As shown in Nos. 43 and 49, when the amount of the additive component is 7.0 parts by weight, ε s is less than 300, and ΔC 85
is outside the range of -10% to +10%, or ΔC -55
is outside the range of -15% to -15%, but sample No. 42,
As shown in No. 48, when the amount added is 5.0 parts by weight, desired characteristics can be obtained. Therefore, the upper limit of the amount added is 5.0 parts by weight. The preferred composition of the additive components is B 2 O 3 − in FIG.
It can be determined based on a triangular diagram showing the composition ratio of SiO 2 -MO. The first point (A) in the triangular diagram is the sample
No. 1 B 2 O 3 is 1 mol%, SiO 2 is 80 mol%, MO
shows a composition of 19 mol%, and the second point (B) is sample No.
B 2 O 3 of 2 is 1 mol%, SiO 2 is 39 mol%, MO is
It shows a composition of 60 mol%, and the third point (C) is sample No. 3.
B 2 O 3 of 30 mol %, SiO 2 0 mol %, MO 70
The composition in mol% is shown, and the fourth point (D) is the composition of sample No. 4.
It shows a composition of 90 mol% B 2 O 3 , 0 mol% SiO 2 , and 10 mol% MO, and the fifth point (E) is that of sample No. 5.
It shows a composition of 90 mol% B 2 O 3 , 10 mol% SiO 2 , and 0 mol% MO, and the sixth point (F) is the same as that of sample No. 6.
The composition is 20 mol% B2O3 , 80 mol% SiO2 , and 0 mol% MO. The composition of the additive components of the sample that falls within the scope of the present invention is within the region surrounded by six straight lines connecting points 1 to 6 (A) to (F) in the triangular diagram in order. If the composition is within this range, desired electrical characteristics can be obtained. On the other hand, if the composition of the additive components falls outside the range specified in the present invention, as in Samples No. 11 to 13,
A dense sintered body cannot be obtained. In addition, M.O.
The components include BaO, as shown in samples No. 14 to 18, for example.
It may be any one of MgO, ZnO, SrO, CaO, or an appropriate ratio as shown in other samples. [Modifications] Although the embodiments of the present invention have been described above, the present invention is not limited thereto, and, for example, the following modifications are possible. (a) A trace amount of a mineralizing agent such as MnO 2 (preferably 0.05 to 0.1% by weight) may be added to the basic components to improve the sinterability, within a range that does not impede the object of the present invention. Further, other substances may be added as necessary. (b) The starting materials may be oxides or hydroxides or other compounds other than those shown in the examples. (c) The temperature of the treatment in the oxidizing atmosphere after the treatment in the non-oxidizing atmosphere during firing is lower than the sintering temperature other than 600℃ (preferably 500℃ to 1000℃).
range). That is, various changes can be made in consideration of the electrode material such as nickel and the oxidation of porcelain. (d) The firing temperature in a non-oxidizing atmosphere can be varied depending on the electrode material. When nickel is used as the internal electrode, almost no aggregation of nickel particles occurs in the range of 1050°C to 1200°C. (e) Sintering may be performed in a neutral atmosphere. (f) It is of course applicable to general single-layer ceramic capacitors other than multilayer ceramic capacitors. (g) Tb, Tm, Lu in the R component in the composition formula
Although it is not particularly listed in Tables 1 to 4, it has been confirmed that it can be used in the same way as the other R components.
第1図は本発明の実施例に係わる積層型磁器コ
ンデンサを示す断面図、第2図は添加成分の組成
範囲を示す三角図である。
12……磁器層、14……内部電極、16……
外部電極。
FIG. 1 is a sectional view showing a multilayer ceramic capacitor according to an embodiment of the present invention, and FIG. 2 is a triangular diagram showing the composition range of additive components. 12...Porcelain layer, 14...Internal electrode, 16...
external electrode.
Claims (1)
とも2つの電極とから成る磁器コンデンサにおい
て、 前記磁器が100.0重量部の基本成分と、 0.2〜5.0重量部の添加成分とから成り、 前記基本成分が、 (1−α){(Bak-x-zMxLz)Ok(Ti1-yRy)
O2-y/2}+αCaZrO3 (但し、MはMg、Znの内の少なくとも1種の金
属、LはCa、Srの内の少なくとも1種の金属、
RはSc、Y、Gd、Dy、Ho、Er、Yb、Tb、
Tm、Luの内の少なくとも1種の金属、α、k、
x、z、yは、 0.005≦α≦0.04 1.00≦k≦1.05 0<x<0.10 0<1≦0.05 0.01≦x+z≦0.10 0<y≦0.04 を満足する数値)であり、 前記添加成分がB2O3とSiO2とMO(但し、MO
はBaO、SrO、CaO、MgO及びZnOの内の少な
くとも1種の金属酸化物)から成り、且つ前記
B2O3と前記SiO2と前記MOとの組成範囲がこれ
等の組成をモル%で示す三角図における。 前記B2O3が1モル%、前記SiO2が80モル%、
前記MOが19モル%の点(A)と、 前記B2O3が1モル%、前記SiO2が39モル%、
前記MOが60モル%の点(B)と、 前記B2O3が30モル%、前記SiO2が0モル%、
前記MOが70モル%の点(C)と、 前記B2O3が90モル%、前記SiO2が0モル%、
前記MOが10モル%の点(D)と、 前記B2O3が90モル%、前記SiO2が10モル%、
前記MOが0モル%の点(E)と、 前記B2O3が20モル%、前記SiO2が80モル%、
前記MOが0モル%の点(F)と を順に結ぶ6本の直線で囲まれた領域内のもので
あることを特徴とするコンデンサ。 2 100.0重量部の基本成分と、0.2〜5.0重量部の
添加成分とから成り、前記基本成分が、 (1−α){(Bak-x-zMxLz)Ok(Ti1-yRy)
O2-y/2}+αCaZrO3 (但し、MはMg、Znの内の少なくとも1種の金
属、LはCa、Srの内の少なくとも1種の金属、
RはSc、Y、Gd、Dy、Ho、Er、Yb、Tb、
Tm、Luの内の少なくとも1種の金属、α、k、
x、z、yは、0.005≦α≦0.04、1.00≦k≦
1.05、0<x<0.10、0<1≦0.05、0.01≦x+
z≦0.10、0<y≦0.04を満足する数値)であ
り、前記添加成分がB2O3とSiO2とMO(但し、
MOはBaO、SrO、CaO、MgO及びZnOの内の少
なくとも1種の金属酸化物)から成り、且つ前記
B2O3と前記SiO2と前記MOとの組成範囲がこれ
等の組成をモル%で示す三角図における前記
B2O3が1モル%、前記SiO2が80モル%、前記
MOが19モル%の点(A)と、前記B2O3が1モル%、
前記SiO2が39モル%、前記MOが60モル%の点(B)
と、前記B2O3が30モル%、前記SiO2が0モル%、
前記MOが70モル%の点(C)と、前記B2O3が90モ
ル%、前記SiO2が0モル%、前記MOが10モル%
の点(D)と、前記B2O3が90モル%、前記SiO2が10
モル%、前記MOが0モル%の点(E)と、前記
B2O3が20モル%、前記SiO2が80モル%、前記
MOが0モル%の点(F)とを順に結ぶ6本の直線で
囲まれた領域内のものであることを特徴とする混
合物を用意する工程と、 少なくとも2つの電極部分を有する前記混合物
の成形物を作る工程と、 前記電極部分を有する前記成形物を非酸化性雰
囲気で焼成する工程と、 前記焼成で得られた成形物を酸化性雰囲気で熱
処理する工程と を含む磁器コンデンサの製造方法。[Scope of Claims] 1. A ceramic capacitor comprising dielectric ceramic and at least two electrodes in contact with the ceramic, wherein the ceramic comprises 100.0 parts by weight of a basic component and 0.2 to 5.0 parts by weight of an additive component. The basic component is (1-α) {(Ba kxz M x L z )O k (Ti 1-y R y )
O 2-y/2 }+αCaZrO 3 (M is at least one metal among Mg and Zn, L is at least one metal among Ca and Sr,
R is Sc, Y, Gd, Dy, Ho, Er, Yb, Tb,
Tm, at least one metal among Lu, α, k,
x, z, y are numerical values satisfying the following: 0.005≦α≦0.04 1.00≦k≦1.05 0<x<0.10 0<1≦0.05 0.01≦x+z≦0.10 0<y≦0.04), and the additive component is B 2 O 3 and SiO 2 and MO (however, MO
consists of at least one metal oxide of BaO, SrO, CaO, MgO and ZnO), and
The composition ranges of B 2 O 3 , the SiO 2 and the MO are shown in a triangular diagram showing these compositions in mol%. The B 2 O 3 is 1 mol%, the SiO 2 is 80 mol%,
Point (A) where the MO is 19 mol %, the B 2 O 3 is 1 mol %, the SiO 2 is 39 mol %,
Point (B) where the MO is 60 mol%, the B 2 O 3 is 30 mol%, the SiO 2 is 0 mol%,
Point (C) where the MO is 70 mol %, the B 2 O 3 is 90 mol %, the SiO 2 is 0 mol %,
Point (D) where the MO is 10 mol%, the B 2 O 3 is 90 mol%, the SiO 2 is 10 mol%,
Point (E) where the MO is 0 mol%, the B 2 O 3 is 20 mol%, the SiO 2 is 80 mol%,
A capacitor characterized in that the MO is within a region surrounded by six straight lines sequentially connecting points (F) with 0 mol %. 2 Consists of 100.0 parts by weight of the basic component and 0.2 to 5.0 parts by weight of additional components, and the basic component is (1-α) {(Ba kxz M x L z )O k (Ti 1-y R y )
O 2-y/2 }+αCaZrO 3 (M is at least one metal among Mg and Zn, L is at least one metal among Ca and Sr,
R is Sc, Y, Gd, Dy, Ho, Er, Yb, Tb,
Tm, at least one metal among Lu, α, k,
x, z, y are 0.005≦α≦0.04, 1.00≦k≦
1.05, 0<x<0.10, 0<1≦0.05, 0.01≦x+
z≦0.10, 0<y≦0.04), and the additive components are B 2 O 3 , SiO 2 and MO (however,
MO consists of at least one metal oxide of BaO, SrO, CaO, MgO, and ZnO, and
The composition range of B 2 O 3 , the SiO 2 and the MO is shown in the triangular diagram showing these compositions in mol%.
B 2 O 3 is 1 mol %, the SiO 2 is 80 mol %, the above
Point (A) where MO is 19 mol%, and the above B 2 O 3 is 1 mol%,
Point (B) where the SiO 2 is 39 mol% and the MO is 60 mol%
and the B 2 O 3 is 30 mol %, the SiO 2 is 0 mol %,
Point (C) where the MO is 70 mol%, the B 2 O 3 is 90 mol%, the SiO 2 is 0 mol%, and the MO is 10 mol%.
point (D), the B 2 O 3 is 90 mol %, the SiO 2 is 10 mol %
mol%, the point (E) where the MO is 0 mol%, and the point (E) where the MO is 0 mol%;
B 2 O 3 is 20 mol %, SiO 2 is 80 mol %,
a step of preparing a mixture characterized in that the mixture is within a region surrounded by six straight lines sequentially connecting points (F) where MO is 0 mol %; A method for manufacturing a porcelain capacitor, comprising: making a molded product; firing the molded product having the electrode portion in a non-oxidizing atmosphere; and heat-treating the molded product obtained by the firing in an oxidizing atmosphere. .
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1311098A JPH03171715A (en) | 1989-11-30 | 1989-11-30 | Porcelain capacitor and manufacture thereof |
| US07/618,710 US5077636A (en) | 1989-11-30 | 1990-11-27 | Solid dielectric capacitor and method of manufacture |
| DE69009693T DE69009693T2 (en) | 1989-11-30 | 1990-11-27 | Solid dielectric capacitor and manufacturing method. |
| EP90122664A EP0430178B1 (en) | 1989-11-30 | 1990-11-27 | Solid dielectric capacitor and method of manufacture |
| KR1019900019735A KR930004744B1 (en) | 1989-11-30 | 1990-11-30 | Magnetic Capacitor and Manufacturing Method Thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1311098A JPH03171715A (en) | 1989-11-30 | 1989-11-30 | Porcelain capacitor and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03171715A JPH03171715A (en) | 1991-07-25 |
| JPH0526323B2 true JPH0526323B2 (en) | 1993-04-15 |
Family
ID=18013116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1311098A Granted JPH03171715A (en) | 1989-11-30 | 1989-11-30 | Porcelain capacitor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03171715A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2938672B2 (en) * | 1992-03-25 | 1999-08-23 | 太陽誘電株式会社 | Porcelain capacitor and method of manufacturing the same |
-
1989
- 1989-11-30 JP JP1311098A patent/JPH03171715A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03171715A (en) | 1991-07-25 |
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