JPH05282934A - Method for forming transparent conductive film - Google Patents
Method for forming transparent conductive filmInfo
- Publication number
- JPH05282934A JPH05282934A JP4077236A JP7723692A JPH05282934A JP H05282934 A JPH05282934 A JP H05282934A JP 4077236 A JP4077236 A JP 4077236A JP 7723692 A JP7723692 A JP 7723692A JP H05282934 A JPH05282934 A JP H05282934A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- metal compound
- film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
- Manufacturing Of Electric Cables (AREA)
- Liquid Crystal (AREA)
- Chemically Coating (AREA)
Abstract
(57)【要約】
【目的】複数の透明導電膜の間で透光性や導電性のバラ
ツキがなく、均一な特性が得られた。
【構成】透明導電膜用の液状金属化合物を超音波振動が
印加されたノズルを介して霧状にし、その霧状金属化合
物を被着用基体の表面に吹き付けて金属化合物膜を形成
し、その後、該金属化合物膜を空気中あるいは酸素を含
む雰囲気中で２００〜６００℃で加熱し酸化させること
により透明導電膜を形成することを特徴とする透明導電
膜の形成方法。
(57) [Summary] [Purpose] There was no variation in translucency or conductivity among a plurality of transparent conductive films, and uniform characteristics were obtained. [Structure] A liquid metal compound for a transparent conductive film is atomized through a nozzle to which ultrasonic vibration is applied, and the atomized metal compound is sprayed onto the surface of a substrate to be coated to form a metal compound film. A method for forming a transparent conductive film, which comprises forming the transparent conductive film by heating the metal compound film in air or in an atmosphere containing oxygen at 200 to 600 ° C. to oxidize it.
Description
【０００１】[0001]
【産業上の利用分野】本発明はスプレー法により膜厚ム
ラのない透明導電膜の形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a transparent conductive film having a uniform film thickness by a spray method.
【０００２】[0002]
【従来の技術】近時、透明導電膜はイメージセンサー、
液晶表示装置、タッチパネル等に盛んに用いられてい
る。この透明導電膜の材料にはＩｎ2 Ｏ3 、ＳｎＯ2 、
Ｉｎ−Ｓｎ−Ｏ化合物、ＴｉＯ3 、Ｓｂ2 Ｏ3 等が提案
され、その一部は既に実用化されている。この透明導電
膜の形成方法として、真空蒸着、スパッタリング
法、反応性スパッタリング法、スプレー法（噴霧熱
分解法）、グロー放電酸化法、ＣＶＤ法等が提案さ
れている。2. Description of the Related Art Recently, a transparent conductive film is an image sensor,
It is widely used in liquid crystal display devices and touch panels. The material of this transparent conductive film is In 2 O 3 , SnO 2 ,
In-Sn-O compound, TiO 3, Sb 2 O 3 or the like have been proposed, some of which are already in practical use. As a method for forming this transparent conductive film, vacuum deposition, sputtering method, reactive sputtering method, spray method (spray pyrolysis method), glow discharge oxidation method, CVD method and the like have been proposed.
【０００３】[0003]
【発明が解決しようとする問題点】しかしながら、これ
らの提案の透明導電膜の形成方法のうち、、、、
、はいずれも真空装置を必要として、その設備に多
大な費用を要し、また、そのメンテナンスにも時間や経
費を要すという問題点があった。更にこれらの方法では
成膜面を大面積化することは困難であるという問題点も
ある。しかも、、、、ではターゲット材を用い
るが、その用意したターゲット材のすべてが透明導電膜
用に使われるのではなく、通常６０〜７０％は未使用の
ままになり、その分、製造コストを高めるという問題点
もある。However, among the methods for forming the transparent conductive film proposed by these methods,
All of them had a problem that they required a vacuum device, which required a great deal of cost for the equipment, and required time and expense for their maintenance. Further, there is a problem that it is difficult to enlarge the film formation surface by these methods. Moreover, the target material is used in ,,, but not all of the prepared target materials are used for the transparent conductive film, and 60% to 70% of the target material is normally unused, which reduces the manufacturing cost. There is also the problem of increasing it.
【０００４】これに対しての方法では、Ｉｎ、Ｓｎ、
Ｓｂ等の金属の有機物や錯体をスプレーで塗布し、次い
で空気中あるいは酸素を含む雰囲気中で２００〜６００
℃で加熱して酸化させることによりＩｎ2 Ｏ3 等を基板
上に形成するという方法であり、この方法であれば、メ
タルマスク等を使用することで（或いはスクリーン印
刷）することによりフォトリソなしでパターンを形成す
ることができる。In the method for this, In, Sn,
An organic substance or complex of a metal such as Sb is applied by spraying, and then 200 to 600 in air or an atmosphere containing oxygen.
It is a method of forming In 2 O 3 etc. on the substrate by heating at ℃ and oxidizing it. In this method, by using a metal mask etc. (or screen printing) without photolithography A pattern can be formed.
【０００５】このの方法では、真空装置を必要としな
いので、上記の問題点が解消できるが、その反面、スプ
レーを使用することにより透明導電膜の厚みのムラが生
じ、これにより、多数に配列された透明導電膜の間で透
光性や導電性のバラツキができるという問題点があっ
た。This method does not require a vacuum device, so that the above problems can be solved, but on the other hand, the use of a spray causes unevenness of the thickness of the transparent conductive film, which causes a large number of arrangements. There is a problem that variations in translucency and conductivity may occur between the formed transparent conductive films.
【０００６】[0006]
【問題点を解決するための手段】本発明の透明導電膜の
形成方法は、透明導電膜用の液状金属化合物を圧縮ガス
を用いて超音波振動が印加されたノズルより霧状に噴出
させ、その霧状金属化合物を被着用基体の表面に吹き付
けて金属化合物膜を形成し、その後、該金属化合物膜を
空気中あるいは酸素を含む雰囲気中で２００〜６００℃
で加熱し酸化させることにより透明導電膜を形成するこ
とを特徴とする。A method for forming a transparent conductive film according to the present invention is such that a liquid metal compound for a transparent conductive film is jetted in a mist form from a nozzle to which ultrasonic vibration is applied using a compressed gas. The atomized metal compound is sprayed on the surface of the substrate to be coated to form a metal compound film, and then the metal compound film is heated to 200 to 600 ° C. in air or an atmosphere containing oxygen.
It is characterized in that a transparent conductive film is formed by heating and oxidizing it.
【０００７】[0007]
【作用】この透明導電膜の形成方法であれば、超音波振
動をノズルに印加しているので、発生した霧状金属化合
物の径が小さくなるとともに均一化し、そのような霧状
金属化合物が被着用基体の表面に効率的に付着し、これ
により、厚みのムラがきわめて小さくなった良質の透明
導電膜を形成することができる。With this method of forming a transparent conductive film, since ultrasonic vibration is applied to the nozzle, the diameter of the atomized metal compound generated becomes smaller and uniform, and such atomized metal compound is not covered. It adheres efficiently to the surface of the wearing substrate, and as a result, it is possible to form a high-quality transparent conductive film with extremely small thickness unevenness.
【０００８】[0008]
【実施例】以下、本発明の実施例を述べる。EXAMPLES Examples of the present invention will be described below.
【０００９】図１は本発明の透明導電膜の形成方法を示
す概要図であり、図２はこの形成方法に用いられるノズ
ルの断面図である。FIG. 1 is a schematic view showing a method for forming a transparent conductive film of the present invention, and FIG. 2 is a sectional view of a nozzle used in this forming method.
【００１０】図１においては、１は透明導電膜用の液状
金属化合物２が入ったタンクであり、３はスプレーであ
る。また、４はメタルマスク、５は被着用基体であり、
６は被着用基体５の表面に成膜された未加熱処理の透明
導電用膜を示す。In FIG. 1, 1 is a tank containing a liquid metal compound 2 for a transparent conductive film, and 3 is a spray. Further, 4 is a metal mask, 5 is a substrate to be worn,
Reference numeral 6 denotes an unheated transparent conductive film formed on the surface of the substrate 5 to be attached.
【００１１】このような構成において、タンク１内の液
状金属化合物２は適度にスプレーノズル３に送られ、こ
のスプレーノズル３により該液状金属化合物２が霧状７
となって被着用基体５に向かう。そして、メタルマスク
４により所定の形状に成膜される。In such a structure, the liquid metal compound 2 in the tank 1 is appropriately sent to the spray nozzle 3, and the liquid metal compound 2 is atomized by the spray nozzle 3.
And goes to the substrate 5 to be worn. Then, a film is formed into a predetermined shape by the metal mask 4.
【００１２】図２に示すノズル３によれば、８は液状金
属化合物２の注入口、９は霧化面であり、この注入口８
から霧化面９に向かって液状金属化合物２が輸送され
る。また、１０は圧電素子、１１はこの圧電素子１０に
電気的に印加するための入力端子である。According to the nozzle 3 shown in FIG. 2, 8 is an injection port for the liquid metal compound 2 and 9 is an atomizing surface.
The liquid metal compound 2 is transported from here to the atomization surface 9. Further, 10 is a piezoelectric element, and 11 is an input terminal for electrically applying to the piezoelectric element 10.
【００１３】このような構成のノズル３において、注入
口８から霧化面９に向かって輸送される液状金属化合物
２に、圧電素子１０により発生した超音波振動エネルギ
ーが加わり、その霧化が促進される。その超音波振動に
振幅が霧化面９で最大になるように設計することにより
効率的に霧化され、これにより、より細粒化するととも
に均一化させることができる。In the nozzle 3 having such a structure, ultrasonic vibration energy generated by the piezoelectric element 10 is added to the liquid metal compound 2 transported from the injection port 8 toward the atomizing surface 9, and the atomization thereof is promoted. To be done. The ultrasonic vibration is efficiently atomized by designing it so that its amplitude is maximized on the atomization surface 9, whereby it is possible to make the particles finer and uniform.
【００１４】上記液状金属化合物２の成分としては、金
属有機物や金属錯体等があり、例えばネオデカン酸Ｉ
ｎ、ネオデカン酸Ｓｎ、オクチル酸Ｓｎ、ネオデカン酸
Ｓｂ、オクチル酸Ｓｂ等があり、これらを単独でもしく
は組み合わせて用いる。そして、この成分をブタノー
ル、トルエン、アセチルアセトン、トリクロルトリフル
オロエタン、ノーマルブチルアセテート等の溶剤に溶か
す。Examples of the component of the liquid metal compound 2 include metal organic substances and metal complexes. For example, neodecanoic acid I
n, neodecanoic acid Sn, octyl acid Sn, neodecanoic acid Sb, octyl acid Sb, and the like, and these are used alone or in combination. Then, this component is dissolved in a solvent such as butanol, toluene, acetylacetone, trichlorotrifluoroethane, or normal butyl acetate.
【００１５】かくして上記構成の透明導電膜の形成方法
によれば、より細粒化するとともに均一化させた霧状液
状金属有機物を被着用基体５の表面に塗布でき、これに
より、厚みのムラがきわめて小さくなった透明導電用膜
６を形成することができる。また、この形成方法によれ
ば、霧化効率が高く、細粒化されるので、粒子の運動量
との関係で質量が小さくなるので、被着用基体５の表面
での反跳が小さくなり、これによっても厚みのムラがき
わめて小さくなった透明導電用膜６を形成することがで
きる。Thus, according to the method for forming a transparent conductive film having the above-mentioned structure, the atomized liquid metal organic material which is made finer and uniform can be applied to the surface of the substrate 5 to be adhered, whereby unevenness in thickness is caused. The extremely small transparent conductive film 6 can be formed. Further, according to this forming method, the atomization efficiency is high and the particles are atomized, so that the mass is small in relation to the momentum of the particles, and therefore the recoil on the surface of the wearing base body 5 is small, Also by this, the transparent conductive film 6 in which the thickness unevenness is extremely small can be formed.
【００１６】次にこの透明導電用膜６を空気中あるいは
酸素を含む雰囲気中で２００〜６００℃で加熱し酸化さ
せることにより透明導電膜を形成することができ、これ
により、多数に配列された透明導電膜の間で透光性や導
電性のバラツキがなく、均一な特性が得られた。Next, the transparent conductive film 6 can be formed by heating the transparent conductive film 6 in air or in an atmosphere containing oxygen at 200 to 600 ° C. to oxidize it. There was no variation in translucency or conductivity between the transparent conductive films, and uniform characteristics were obtained.
【００１７】本発明者等は上記の技術的思想に基づき、
下記の実験を行った。Based on the above technical idea, the present inventors have
The following experiment was conducted.
【００１８】（例１）先ず液状金属化合物２には、ネオ
デカン酸インジウムＩｎ（Ｃ9 Ｈ19ＣＯＯ）3 と、ネオ
デカン酸スズＳｎ（Ｃ9 Ｈ19ＣＯＯ）4 との混合物を用
いて、その混合比率はＩｎとＳｎの原子比率でもってＩ
ｎ／Ｓｎ＝９５／５、その混合物の溶剤にはアセチルア
セトンを用いた。また、ノズル３には岩下エンジニアリ
ング株式会社製のソノテックシステムを用いて、その超
音波振動の周波数は、ｆ＝１２０ＫＨｚ、中間粒子径２
０μｍ、有効粒子径５０μｍに設定した。被着用基体５
には、コーニング製♯７０５９のガラス基板を用いた。Example 1 First, as the liquid metal compound 2, a mixture of indium neodecanoate In (C 9 H 19 COO) 3 and tin neodecanoate Sn (C 9 H 19 COO) 4 was used. The ratio is I with the atomic ratio of In and Sn.
n / Sn = 95/5, and acetylacetone was used as a solvent for the mixture. Moreover, the nozzle 3 uses a Sonotec system manufactured by Iwashita Engineering Co., Ltd., and the frequency of ultrasonic vibration is f = 120 KHz and the intermediate particle diameter is 2
The particle size was set to 0 μm and the effective particle size was 50 μm. Base material 5
For this, a glass substrate # 7059 manufactured by Corning was used.
【００１９】図１の透明導電膜の形成方法により上記条
件に従って被着用基体５の上にゾル状の金属有機化合物
の薄膜（透明導電用膜６）を作製した。A thin film of a sol-like metal organic compound (transparent conductive film 6) was formed on the substrate 5 to be attached according to the above conditions by the method for forming the transparent conductive film shown in FIG.
【００２０】次いで、この透明導電用膜６が形成された
基体５を加熱器（図示せず）に投入し、空気中で５００
℃に加熱し、この透明導電用膜６を加熱酸化し、インジ
ウムとスズの複合酸化物からなる透明導電膜へ化学変化
させた。この透明導電膜は厚み１０μｍ以下で、抵抗率
が２〜１０キロオーム／□の範囲内の均質な成膜になっ
た。また、この透明導電膜の可視光領域での光学的透過
率が９０〜１００％と良好であり、しかも、膜面にわた
って均一であった。Then, the substrate 5 on which the transparent conductive film 6 is formed is put into a heater (not shown), and 500 in air.
The transparent conductive film 6 was heated to 0 ° C. and heated and oxidized to chemically change to a transparent conductive film made of a composite oxide of indium and tin. This transparent conductive film had a thickness of 10 μm or less, and a uniform film having a resistivity of 2 to 10 kΩ / □ was formed. The optical transmittance of this transparent conductive film in the visible light region was as good as 90 to 100%, and moreover, it was uniform over the film surface.
【００２１】（例２）上記の（例２）において、超音波
振動をノズルに印加しないで、その他は同じ方法により
インジウムとスズの複合酸化物からなる透明導電膜を形
成したところ、この抵抗率は５〜１００キロオーム／□
の範囲内であり、その値は膜の部位によりばらつきが大
きかった。しかも、この透明導電膜の可視光領域での光
学的透過率が６０〜９０％と部位によるばらつきが大き
く、品質の悪い膜となった。(Example 2) A transparent conductive film made of a complex oxide of indium and tin was formed by the same method as in Example 2 except that ultrasonic vibration was not applied to the nozzle. Is 5 to 100 kilohms / □
, And the value varied greatly depending on the site of the membrane. Moreover, the optical transmissivity of this transparent conductive film in the visible light region was 60 to 90%, and there were large variations depending on the site, resulting in a film of poor quality.
【００２２】（例３）上記の（例１）において、液状金
属化合物２には、ネオデカン酸アンチモンＳｂ（Ｃ9 Ｈ
19ＣＯＯ）4 と、ネオデカン酸スズＳｎ（Ｃ9 Ｈ19ＣＯ
Ｏ）4 との混合物を用いて、その混合比率はＳｂとＳｎ
の原子比率でもってＳｎ／Ｓｂ＝９２／８、その混合物
の溶剤にはアセチルアセトンを用いた。そして、その他
は同じ方法によりアンチモンとスズの複合酸化物からな
る透明導電膜を形成したところ、この各ラインの抵抗率
は２〜１６キロオーム／□であり、また、この透明導電
膜の可視光領域での光学的透過率が９３〜１００％であ
り、この膜全体にわたって均質であった。(Example 3) In the above (Example 1), the liquid metal compound 2 contains antimony neodecanoate Sb (C 9 H
19 COO) 4 and tin neodecanoate Sn (C 9 H 19 CO
O) 4 and the mixing ratio is Sb and Sn.
The atomic ratio of Sn / Sb was 92/8, and acetylacetone was used as the solvent for the mixture. When a transparent conductive film made of a composite oxide of antimony and tin was formed by the same method except for the above, the resistivity of each line was 2 to 16 kOhm / □, and the visible light region of this transparent conductive film was The optical transmission at 93-100% was homogeneous throughout the film.
【００２３】[0023]
【発明の効果】以上の通り、本発明の透明導電膜の形成
方法によれば、超音波振動をノズルに印加するスプレー
法であるので、発生した霧状金属化合物の径が小さくな
るとともに均一化し、そのような霧状金属化合物が被着
用基体の表面に効率的に付着し、これにより、厚みのム
ラがきわめて小さくなった透明導電膜を形成することが
でき、その結果、多数に配列された透明導電膜の間で透
光性や導電性のバラツキがなく、均一な特性が得られ
た。As described above, according to the method for forming the transparent conductive film of the present invention, since the spray method is one in which ultrasonic vibration is applied to the nozzle, the diameter of the atomized metal compound generated becomes smaller and uniform. , Such an atomized metal compound efficiently adheres to the surface of the substrate to be coated, whereby a transparent conductive film having extremely small thickness unevenness can be formed, and as a result, a large number of them are arranged. There was no variation in translucency or conductivity between the transparent conductive films, and uniform characteristics were obtained.
【００２４】また、この透明導電膜の形成方法であれ
ば、真空装置を必要とせず、その設備費用を不要し、ま
た、そのメンテナンスも不要し、更に成膜面を大面積化
することも容易になった。Further, according to this method of forming a transparent conductive film, a vacuum device is not required, the equipment cost thereof is not required, the maintenance thereof is also unnecessary, and it is easy to enlarge the film forming surface. Became.
【図１】本発明の透明導電膜の形成方法を示す説明図で
ある。FIG. 1 is an explanatory view showing a method for forming a transparent conductive film of the present invention.
【図２】図１に示すノズルの断面図である。FIG. 2 is a cross-sectional view of the nozzle shown in FIG.
２・・・・液状金属化合物 ３・・・・スプレー ５・・・・ノズル ６・・・・透明導電用膜 ９・・・・霧化面 １０・・・圧電素子 2 ... Liquid metal compound 3 ... Spray 5 ... Nozzle 6 ... Transparent conductive film 9 ... Atomizing surface 10 ... Piezoelectric element
Claims (1)
を用いて超音波振動が印加されたノズルより霧状に噴出
させ、その霧状金属化合物を被着用基体の表面に吹き付
けて金属化合物膜を形成し、その後、該金属化合物膜を
空気中あるいは酸素を含む雰囲気中で２００〜６００℃
で加熱し酸化させることにより透明導電膜を形成するこ
とを特徴とする透明導電膜の形成方法。1. A liquid metal compound for a transparent conductive film is ejected in a mist form from a nozzle to which ultrasonic vibration is applied by using a compressed gas, and the atomized metal compound is sprayed onto the surface of a substrate to be coated. After forming a film, the metal compound film is then heated to 200 to 600 ° C. in air or an atmosphere containing oxygen.
A method for forming a transparent conductive film, which comprises forming a transparent conductive film by heating and oxidizing it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4077236A JPH05282934A (en) | 1992-03-31 | 1992-03-31 | Method for forming transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4077236A JPH05282934A (en) | 1992-03-31 | 1992-03-31 | Method for forming transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05282934A true JPH05282934A (en) | 1993-10-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4077236A Pending JPH05282934A (en) | 1992-03-31 | 1992-03-31 | Method for forming transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05282934A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0682988A1 (en) * | 1994-05-18 | 1995-11-22 | Xerox Corporation | Acoustic deposition of material layers |
| JP2006245134A (en) * | 2005-03-01 | 2006-09-14 | Clean Venture 21:Kk | Photoelectric conversion device and method for manufacturing the same |
| KR100932297B1 (en) * | 2009-08-10 | 2009-12-16 | 한국생산기술연구원 | Liquid crystal dropping device using ultrasonic wave |
| WO2015056874A1 (en) * | 2013-10-17 | 2015-04-23 | 주식회사 펩트론 | Ultrasonic automizer for aseptic process |
| WO2015056873A1 (en) * | 2013-10-17 | 2015-04-23 | 주식회사 펩트론 | Ultrasonic automizer for aseptic process |
-
1992
- 1992-03-31 JP JP4077236A patent/JPH05282934A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0682988A1 (en) * | 1994-05-18 | 1995-11-22 | Xerox Corporation | Acoustic deposition of material layers |
| US5591490A (en) * | 1994-05-18 | 1997-01-07 | Xerox Corporation | Acoustic deposition of material layers |
| JP2006245134A (en) * | 2005-03-01 | 2006-09-14 | Clean Venture 21:Kk | Photoelectric conversion device and method for manufacturing the same |
| KR100932297B1 (en) * | 2009-08-10 | 2009-12-16 | 한국생산기술연구원 | Liquid crystal dropping device using ultrasonic wave |
| WO2011019186A3 (en) * | 2009-08-10 | 2011-06-30 | 한국생산기술연구원 | Apparatus for dispensing liquid crystals using ultrasonic waves |
| US8888548B2 (en) | 2009-08-10 | 2014-11-18 | Korea Institute Of Industrial Technology | Apparatus of dispensing liquid crystal using the ultrasonic wave |
| WO2015056874A1 (en) * | 2013-10-17 | 2015-04-23 | 주식회사 펩트론 | Ultrasonic automizer for aseptic process |
| WO2015056873A1 (en) * | 2013-10-17 | 2015-04-23 | 주식회사 펩트론 | Ultrasonic automizer for aseptic process |
| US9757757B2 (en) | 2013-10-17 | 2017-09-12 | Peptron, Inc. | Ultrasonic atomizer for aseptic process |
| US9776201B2 (en) | 2013-10-17 | 2017-10-03 | Peptron, Inc. | Ultrasonic atomizer for aseptic process |
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