JPH0529302A - Manufacturing device for semiconductor device - Google Patents
Manufacturing device for semiconductor deviceInfo
- Publication number
- JPH0529302A JPH0529302A JP18595991A JP18595991A JPH0529302A JP H0529302 A JPH0529302 A JP H0529302A JP 18595991 A JP18595991 A JP 18595991A JP 18595991 A JP18595991 A JP 18595991A JP H0529302 A JPH0529302 A JP H0529302A
- Authority
- JP
- Japan
- Prior art keywords
- head
- interval
- tray
- distance
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000012495 reaction gas Substances 0.000 claims abstract description 7
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 239000006185 dispersion Substances 0.000 claims abstract description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造装置
に関し、特に酸化膜等を堆積させる常圧ＣＶＤ装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to an atmospheric pressure CVD apparatus for depositing an oxide film or the like.
【０００２】[0002]
【従来の技術】従来の常圧ＣＶＤ装置は、搬送用トレイ
にローディングされた半導体基板を移動させ、反応ガス
を放出するディスパージョンヘッド（以下ヘッドと称す
る）の下を通過させる事により、酸化膜等を堆積させる
機能を有している。2. Description of the Related Art In a conventional atmospheric pressure CVD apparatus, a semiconductor substrate loaded on a transfer tray is moved and passed under a dispersion head (hereinafter referred to as a head) which releases a reaction gas, thereby forming an oxide film. It has the function of depositing etc.
【０００３】そして形成する膜の膜厚の制御は反応ガス
を放出するヘッドと半導体基板を搬送するトレイの間隔
（以下ヘッド間隔と称する）を一定に保つ方法が講じら
れていた。In order to control the film thickness of the film to be formed, a method has been taken in which the distance between the head for discharging the reaction gas and the tray for transporting the semiconductor substrate (hereinafter referred to as the head distance) is kept constant.
【０００４】[0004]
【発明が解決しようとする課題】この従来の常圧ＣＶＤ
装置では複数トレイの平行度と特定トレイとのヘッド間
隔を保つことにより膜厚を制御する構造になっている
為、トレイの変形等によりヘッド間隔が変化し、そのト
レイにローディングされた半導体基板の膜厚がばらつく
という問題点がある。This conventional atmospheric pressure CVD
Since the device has a structure in which the film thickness is controlled by maintaining the parallelism of a plurality of trays and the head interval with a specific tray, the head interval changes due to the deformation of the trays, etc. There is a problem that the film thickness varies.
【０００５】またトレイの搬送系の摩耗・ヘッドのガタ
つき等によってもヘッド間隔がばらつき、その結果、膜
厚がばらつくという問題点もある。Further, there is also a problem that the head interval varies due to abrasion of the tray transport system, the backlash of the head, etc., and as a result, the film thickness varies.
【０００６】本発明の目的は、トレイの変形，トレイの
搬送系の摩耗・ヘッドのガタつき等によるヘッド間隔の
ばらつきを除去し、反応ガスを放出するヘッドと半導体
基板を搬送するトレイの間隔を常に一定に保ち膜厚ばら
つきを低減できる半導体装置の製造装置を提供すること
にある。An object of the present invention is to eliminate variations in the head gap due to deformation of the tray, wear of the tray conveying system, rattling of the head, etc. It is an object of the present invention to provide a semiconductor device manufacturing apparatus capable of constantly maintaining a constant value and reducing variations in film thickness.
【０００７】[0007]
【課題を解決するための手段】本発明の半導体装置の製
造装置である常圧ＣＶＤ装置は、ヘッドとトレイの間隔
を測定するセンサー部と、その信号によりヘッド間隔を
制御するコントローラー部及びヘッド間隔調整部とを備
えている。SUMMARY OF THE INVENTION An atmospheric pressure CVD apparatus which is a semiconductor device manufacturing apparatus of the present invention comprises a sensor section for measuring the distance between a head and a tray, a controller section for controlling the head distance by the signal, and a head distance. And an adjusting unit.
【０００８】[0008]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例の半導体装置の製造装置で
ある常圧ＣＶＤ装置の断面図である。The present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of an atmospheric pressure CVD apparatus which is a semiconductor device manufacturing apparatus according to an embodiment of the present invention.
【０００９】フレキシブルガス配管４ａから送られてく
る反応ガスがヘッド３を通りトレイ６にローディングさ
れた半導体基板１に酸化膜等を成長する。この際ヘッド
ガイド７，トレイ６に入っている同極性の電磁石２がそ
れぞれ対向しあうところで反発しあい、離れている距離
をセンサー８が測定する。その測定した結果からコント
ローラー５がヘッドガイド７についている電磁石２の磁
力を制御しヘッドガイド７を動かす事でヘッド３，トレ
イ６の間隔（ヘッド間隔）を一定に保ち均一な膜厚にす
る。The reaction gas sent from the flexible gas pipe 4a passes through the head 3 to grow an oxide film or the like on the semiconductor substrate 1 loaded on the tray 6. At this time, the head guide 7 and the electromagnets 2 of the same polarity contained in the tray 6 repel each other when they face each other, and the sensor 8 measures the distance. Based on the measured results, the controller 5 controls the magnetic force of the electromagnet 2 attached to the head guide 7 and moves the head guide 7 to keep the distance between the head 3 and the tray 6 (head distance) constant and obtain a uniform film thickness.
【００１０】図２は本発明の他の実施例の断面図であ
る。ヘッド３，トレイ６の間隔（ヘッド間隔）をセンサ
ー８が測定する。FIG. 2 is a sectional view of another embodiment of the present invention. The sensor 8 measures the distance between the head 3 and the tray 6 (head distance).
【００１１】その測定した結果からコントローラー５が
モーター２ｂを制御しトレイ６を動かす事でヘッド間隔
を一定に保つ。Based on the measurement result, the controller 5 controls the motor 2b to move the tray 6 to keep the head interval constant.
【００１２】上述した実施例１，２の違いは、反応ガス
を放出するヘッド３側を制御するか半導体基板１を搬送
するトレイ６を制御するかという点である。The difference between the first and second embodiments described above is whether to control the head 3 side for discharging the reaction gas or the tray 6 for carrying the semiconductor substrate 1.
【００１３】[0013]
【発明の効果】以上説明したように本発明は、常圧ＣＶ
Ｄ装置の反応ガスを放出するヘッドと、半導体基板を搬
送するトレイの間隔を測定するセンサーと、制御するコ
ントローラーで一定に保つことにより、 （１）ヘッド間隔変動から発生する酸化膜等の膜厚ばら
つき低減 （２）間隔調整等人の手による設定が減ることによる人
為的ミス低減 ができるという効果がある。As described above, according to the present invention, the normal pressure CV is used.
By keeping constant with the head that discharges the reaction gas of the D device and the sensor that measures the distance between the trays that carry the semiconductor substrates, and the controller that controls the thickness, (1) the film thickness of the oxide film or the like caused by the fluctuation of the head distance Variability reduction (2) There is an effect that human error can be reduced by reducing the setting by humans such as interval adjustment.
【００１４】理論的には上述した不具合の発生は０％に
できる。Theoretically, the occurrence of the above problems can be reduced to 0%.
【図１】本発明の一実施例の常圧ＣＶＤ装置の構成を示
す概略断面図である。FIG. 1 is a schematic sectional view showing the structure of an atmospheric pressure CVD apparatus according to an embodiment of the present invention.
【図２】本発明の他の実施例の常圧ＣＶＤ装置の構成を
示す概略断面図である。FIG. 2 is a schematic sectional view showing the structure of an atmospheric pressure CVD apparatus according to another embodiment of the present invention.
１ 半導体基板 ２ａ 電磁石 ２ｂ モーター ３ ヘッド ４ａ フレキシブルガス配管 ４ｂ ガス配管 ５ コントローラー ６ トレイ ７ ヘッドガイド ８ センサー Ｗ ヘッド間隔 1 semiconductor substrate 2a electromagnet 2b motor 3 head 4a flexible gas piping 4b gas piping 5 controller 6 tray 7 head guide 8 sensor W head spacing
Claims (1)
ＳＧ膜等を堆積させる常圧ＣＶＤ装置において、反応ガ
スを放出するディスパージョンヘッドと半導体基板を搬
送するトレイの間隔の自動調整機能を備える事を特徴と
する半導体装置の製造装置。Claims: 1. An oxide film, a PSG film, and a BP on a semiconductor substrate.
An atmospheric pressure CVD apparatus for depositing an SG film or the like, which is provided with a function of automatically adjusting a distance between a dispersion head for discharging a reaction gas and a tray for carrying a semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18595991A JPH0529302A (en) | 1991-07-25 | 1991-07-25 | Manufacturing device for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18595991A JPH0529302A (en) | 1991-07-25 | 1991-07-25 | Manufacturing device for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0529302A true JPH0529302A (en) | 1993-02-05 |
Family
ID=16179874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18595991A Pending JPH0529302A (en) | 1991-07-25 | 1991-07-25 | Manufacturing device for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0529302A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003249491A (en) * | 2002-02-26 | 2003-09-05 | Nec Kansai Ltd | Cvd system and method |
| DE102006018515A1 (en) * | 2006-04-21 | 2007-10-25 | Aixtron Ag | CVD reactor with lowerable process chamber ceiling |
-
1991
- 1991-07-25 JP JP18595991A patent/JPH0529302A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003249491A (en) * | 2002-02-26 | 2003-09-05 | Nec Kansai Ltd | Cvd system and method |
| DE102006018515A1 (en) * | 2006-04-21 | 2007-10-25 | Aixtron Ag | CVD reactor with lowerable process chamber ceiling |
| US8157915B2 (en) | 2006-04-21 | 2012-04-17 | Aixtron Inc. | CVD reactor having a process-chamber ceiling which can be lowered |
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