JPH0529448A - Exhaust method - Google Patents
Exhaust methodInfo
- Publication number
- JPH0529448A JPH0529448A JP18624191A JP18624191A JPH0529448A JP H0529448 A JPH0529448 A JP H0529448A JP 18624191 A JP18624191 A JP 18624191A JP 18624191 A JP18624191 A JP 18624191A JP H0529448 A JPH0529448 A JP H0529448A
- Authority
- JP
- Japan
- Prior art keywords
- airtight container
- predetermined
- container
- vacuum
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
(57)【要約】 （修正有）
【目的】 気密容器付着物を除去し大気に解放される気
密容器の排気を短時間で実行できる排気方法を提供す
る。
【構成】 開閉扉を開き気密容器を大気に解放する以前
に気密容器壁を所定の温度に加熱し、大気解放中および
開閉扉を閉じて気密容器内を真空排気中の所定時間、気
密容器を所定の加熱温度に維持し、次に所定の温度に冷
却する。他の方法は気密容器を長時間大気に解放後、排
気操作開始前より少なくとも気密容器を所定の温度に加
熱し、開閉扉を閉じて気密容器内を排気中の所定時間、
気密容器を所定の加熱温度に維持し、次に所定の温度に
冷却する。また、その他の方法は、気密容器を大気に解
放中、気密容器を所定の温度に加熱し、開閉扉を閉じて
気密容器内を排気中の所定時間所定の加熱温度に維持
し、次に所定の温度に冷却する。
(57) [Summary] (Correction) [Purpose] To provide an exhaust method capable of removing deposits in an airtight container and exhausting the airtight container released to the atmosphere in a short time. [Structure] Before opening the open / close door and opening the airtight container to the atmosphere, the airtight container wall is heated to a predetermined temperature, and the airtight container is opened for a predetermined time while the air is being evacuated and the open / close door is closed. It is maintained at a predetermined heating temperature and then cooled to a predetermined temperature. Another method is to open the airtight container to the atmosphere for a long time, then heat at least the airtight container to a predetermined temperature before starting the exhaust operation, close the opening / closing door and exhaust the airtight container for a predetermined time,
The airtight container is maintained at a predetermined heating temperature and then cooled to a predetermined temperature. Another method is to heat the airtight container to a predetermined temperature while releasing the airtight container to the atmosphere, close the open / close door to maintain the airtight container at a predetermined heating temperature for a predetermined time during evacuation, and then to a predetermined temperature. Cool to temperature.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、排気方法に関する。FIELD OF THE INVENTION The present invention relates to an exhaust method.
【０００２】[0002]
【従来の技術】従来、半導体ウェハ製造工程において
は、ＣＶＤ装置、エピタキシャル装置、酸化膜形成装
置、拡散装置等の成膜装置やイオン注入装置、ドライ・
エッチング装置およびスパッター装置等、被処理体たと
えば半導体ウェハを真空状態にしての処理、たとえば成
膜やイオン注入等を行う装置が数多く用いられている。
これらの真空処理装置は半導体ウェハを多数枚一度に処
理するバッチ式や一枚毎に処理する枚葉式がある。また
真空容器はステンレスまたはアルミ合金により製作され
ており、排気装置としてターボ分子ポンプやロータリー
ポンプを用いて、大気圧から排気を行っている。2. Description of the Related Art Conventionally, in a semiconductor wafer manufacturing process, a film forming device such as a CVD device, an epitaxial device, an oxide film forming device, a diffusion device, an ion implantation device, a dry
Many apparatuses, such as an etching apparatus and a sputtering apparatus, are used for processing a target object such as a semiconductor wafer in a vacuum state, for example, performing film formation or ion implantation.
These vacuum processing apparatuses include a batch type in which a large number of semiconductor wafers are processed at once, and a single wafer type in which each semiconductor wafer is processed. The vacuum container is made of stainless steel or aluminum alloy, and a turbo molecular pump or a rotary pump is used as an exhaust device to exhaust from the atmospheric pressure.
【０００３】真空容器を大気圧に解放した状態から容器
を密閉し排気を行う場合、高真空度を得るために排気開
始後、所定の圧力になってから真空容器を一定時間ベー
キングと称される高温、たとえばアルミ合金からなる容
器では 140℃に加熱脱ガス処理を行う方法が行われてい
る。また真空容器内部を真空状態から大気圧に戻す場合
には乾燥窒素ガスや乾燥空気を容器に導入しその気体雰
囲気で容器が満たされるようにしたり、容器の内部に挿
入される試料等の交換で容器の一部を解放する場合に
は、乾燥窒素ガスや乾燥空気が解放口より放出する処置
を実施し、大気中の水分が真空容器内に進入し難いよう
に対策を施している。When the vacuum container is hermetically evacuated in a state where the vacuum container is opened to the atmospheric pressure, the vacuum container is referred to as baking for a certain period of time after the evacuation is started and a predetermined pressure is reached in order to obtain a high degree of vacuum. At a high temperature, for example, a container made of an aluminum alloy is heated to 140 ° C for degassing. In addition, when returning the inside of the vacuum container from atmospheric pressure to atmospheric pressure, dry nitrogen gas or dry air may be introduced into the container so that the container is filled with the gas atmosphere, or the sample inserted into the container can be replaced. When part of the container is released, dry nitrogen gas or dry air is discharged from the release port, and measures are taken to prevent moisture in the atmosphere from entering the vacuum container.
【０００４】[0004]
【発明が解決しようとする課題】ベーキングを行って真
空排気する技術では、ベーキングに長時間を要するため
効率が悪いという改善点を有していた。また真空容器を
大気に解放する際に乾燥窒素ガスを真空容器の解放口よ
り放出する方法では、多量に乾燥窒素ガスを放出しても
所定時間たとえば 1分間解放すると真空容器への大気の
拡散あるいは流入や巻き込みは避けられず、大気の水分
が真空容器内に付着してしまうという問題点があった。The technique of baking and evacuation has a problem that the efficiency is poor because the baking requires a long time. Also, in the method of releasing dry nitrogen gas from the opening of the vacuum container when releasing the vacuum container to the atmosphere, even if a large amount of dry nitrogen gas is released, if the release is performed for a predetermined time, for example, 1 minute, the atmosphere will diffuse or Inflow and entrainment are unavoidable, and there is a problem that atmospheric moisture adheres to the inside of the vacuum container.
【０００５】以上説明したような真空処理を行う半導体
処理装置では、被処理体を真空容器に搬入する際、真空
容器が大気圧に戻され、真空容器内壁が大気に接触した
際、極めて短時間のうちに真空容器内壁表面への水分を
主体とする気体分子の吸着が起こる。また室温状態で粗
排気が行われた真空容器内では、真空容器内壁に付着し
た大気中の水分の凝縮・結露が発生する。In the semiconductor processing apparatus for performing the vacuum processing as described above, when the object to be processed is loaded into the vacuum container, the vacuum container is returned to the atmospheric pressure, and when the inner wall of the vacuum container comes into contact with the atmosphere, it takes an extremely short time. During this time, gas molecules mainly composed of water are adsorbed on the surface of the inner wall of the vacuum container. Further, in the vacuum container that has been roughly evacuated at room temperature, condensation and dew condensation of moisture in the atmosphere attached to the inner wall of the vacuum container occurs.
【０００６】初期の排気過程では、こうした容器内壁へ
吸着あるいは付着した水分が徐々に蒸発し、主な残留気
体として圧力の減少を妨げ、所定の真空度に達する所要
時間を長くし、処理効率を低下させる要因になってい
る。特に外部雰囲気の湿度が高い場合や、真空容器が冷
却されている場合には、結露の発生が著しく、真空引き
に時間がかかっている。In the initial evacuation process, the water adsorbed or adhered to the inner wall of the container gradually evaporates, which prevents the pressure from decreasing as a main residual gas, prolongs the time required to reach a predetermined degree of vacuum, and improves the processing efficiency. It has become a factor to reduce. In particular, when the humidity of the external atmosphere is high or when the vacuum container is cooled, dew condensation occurs remarkably, and it takes time to evacuate.
【０００７】本発明は上記の欠点を改善するためになさ
れたもので、気密容器付着物を除去し大気に解放される
気密容器の排気を短時間で実行できる排気方法を提供す
るものである。The present invention has been made in order to solve the above-mentioned drawbacks, and provides an exhausting method capable of removing adhering substances in an airtight container and exhausting the airtight container released to the atmosphere in a short time.
【０００８】[0008]
【課題を解決するための手段】第１の発明方法は、開閉
扉を開き気密容器を大気に少なくとも解放する以前に気
密容器壁を所定の温度に加熱する工程と、気密容器を大
気解放中および上記開閉扉を閉じて気密容器内を真空排
気中の所定時間、少なくとも上記気密容器を所定の加熱
温度に維持する工程と、次に上記気密容器を所定の温度
に冷却する工程とからなることを特徴とする排気方法。According to a first method of the present invention, a step of heating an airtight container wall to a predetermined temperature before opening an opening / closing door and at least opening the airtight container to the atmosphere, releasing the airtight container to the atmosphere, and For a predetermined time during which the inside of the airtight container is vacuum evacuated by closing the opening / closing door, a step of maintaining at least the airtight container at a predetermined heating temperature, and a step of subsequently cooling the airtight container to a predetermined temperature, The characteristic exhaust method.
【０００９】第２の発明方法は、気密容器を長時間大気
に解放後、排気するに際し、排気操作開始前より少なく
とも気密容器を所定の温度に加熱する工程と、開閉扉を
閉じて気密容器内を排気中の所定時間、少なくとも気密
容器を所定の加熱温度に維持する工程と、次に気密容器
を所定の温度に冷却する工程とからなることを特徴とす
る排気方法。In the second invention method, when the airtight container is exposed to the atmosphere for a long time and then exhausted, a step of heating the airtight container to a predetermined temperature at least before the start of the exhaust operation, and closing the opening / closing door to close the airtight container During the evacuation for a predetermined time, at least maintaining the airtight container at a predetermined heating temperature, and then cooling the airtight container to a predetermined temperature.
【００１０】第３の発明方法は、気密容器を大気に解放
中、少なくとも気密容器を所定の温度に加熱する工程
と、開閉扉を閉じて気密容器内を排気中の所定時間、少
なくとも気密容器を所定の加熱温度に維持する工程と、
次に気密容器を所定の温度に冷却する工程とからなるこ
とを特徴とする排気方法。According to a third method of the present invention, at least during heating the airtight container to the atmosphere, heating the airtight container to a predetermined temperature, and closing the opening / closing door to exhaust the airtight container for a predetermined time. Maintaining a predetermined heating temperature,
Next, a method of cooling the airtight container to a predetermined temperature is provided.
【００１１】[0011]
【作用】この発明方法は、気密容器とこの気密容器に設
けられる加熱手段および冷却手段と、前記気密容器に接
続される排気手段とよりなっている真空装置において、
気密容器が大気解放前および大気解放中、加熱手段によ
り気密容器内壁が水の気化温度以上に加熱されるので水
分の気密容器内壁への付着は少ない。気密容器を真空排
気して減圧の初期期間も上記と同様に加熱しているので
水分の減圧に起因する凝縮・結露も少ない。また所定時
間後、前記冷却手段により気密容器および被処理体を脱
ガスの少ない温度に冷却することにより気密容器内は良
好な高真空を得ることができる。The method of the present invention comprises a vacuum apparatus comprising an airtight container, heating means and cooling means provided in the airtight container, and exhaust means connected to the airtight container,
Before and during the air release of the airtight container to the atmosphere, the heating means heats the inner wall of the airtight container to a temperature above the vaporization temperature of water, so that the adhesion of water to the inner wall of the airtight container is small. Since the airtight container is evacuated and heated in the same manner as above during the initial period of depressurization, condensation and dew condensation due to the depressurization of water are also small. After a predetermined time, the cooling means cools the airtight container and the object to be treated to a temperature at which degassing is small, so that a good high vacuum can be obtained in the airtight container.
【００１２】[0012]
【実施例】実施例１
以下、本発明の排気方法をイオン注入装置のロードロッ
ク部に適用した一実施例について、まずイオン注入装置
の構成を図面を参照して具体的に説明する。図１に示さ
れる気密容器たとえば真空容器１は、材質たとえばステ
ンレススチールにより溶接構造とされた立方たとえば
縦、横、高さ約25×25×50cmのもので、容器外周囲には
冷却手段としてたとえば外直径 6mm位の銅製パイプから
なる冷媒循環用配管２が螺旋状に巻回され、この配管２
は熱伝導をよくするため上記真空容器１に密着たとえば
ロウ付けされ、上記配管２の両端は図示しない冷媒温度
調整用装置たとえばチラー等に接続され、冷媒が循環供
給可能な如く構成されている。また上記真空容器の加熱
手段としてたとえばシーズヒータからなる発熱部である
ヒータ４が螺旋状の上記冷媒循環用配管２と交互に上記
真空容器１に密着して螺旋状に巻回され、外部の図示し
ない加熱のための電力供給制御装置に接続されている。
また上記真空容器１の内部には被処理体たとえば半導体
ウェハの加熱手段としての、たとえばハロゲンランプ６
が設けられている。EXAMPLE 1 An example in which the exhaust method of the present invention is applied to a load lock section of an ion implantation apparatus will be described in detail below with reference to the drawings. An airtight container shown in FIG. 1, for example, a vacuum container 1 is a cubic structure having a welded structure made of, for example, stainless steel, for example, length, width, and height of about 25 × 25 × 50 cm. A refrigerant circulation pipe 2 made of a copper pipe having an outer diameter of about 6 mm is spirally wound.
In order to improve heat conduction, is adhered to, for example, brazed to the vacuum container 1, and both ends of the pipe 2 are connected to a refrigerant temperature adjusting device (not shown), such as a chiller, so that the refrigerant can be circulated and supplied. Further, as a heating means for the vacuum container, a heater 4, which is a heat-generating part made of, for example, a sheathed heater, is closely wound on the vacuum container 1 alternately with the spiral refrigerant circulation pipe 2 and is spirally wound. Not connected to the power supply controller for heating.
Further, inside the vacuum container 1, for example, a halogen lamp 6 is provided as a heating means for heating an object to be processed, for example, a semiconductor wafer.
Is provided.
【００１３】上記真空容器１のたとえば対向する両側面
にはゲートバルブＧ１、Ｇ２が被処理体たとえば半導体
ウェハを搬出入するため設置されている。Gate valves G1 and G2 are installed on both sides of the vacuum container 1 which face each other, for loading and unloading an object to be processed such as a semiconductor wafer.
【００１４】また上記真空容器１内の上部には図示しな
いガス供給源からたとえば窒素ガスを供給するガス供給
管８が設けられている。A gas supply pipe 8 for supplying, for example, nitrogen gas from a gas supply source (not shown) is provided in the upper portion of the vacuum container 1.
【００１５】また前記真空容器１の底部には真空容器１
を排気するため、たとえばロータリポンプで能力 250リ
ットル／分およびたとえばターボ分子ポンプで能力 300
リットル／秒によって構成された排気装置１４が接続さ
れ、真空度たとえば10-6Torrから10-9Torrに減圧するこ
とが可能の如き構成で、ロードロック部１５が形成され
ている。At the bottom of the vacuum container 1, the vacuum container 1
For example, a rotary pump with a capacity of 250 l / min and a turbomolecular pump with a capacity of 300 l / min.
An exhaust device 14 configured by liter / second is connected, and a load lock portion 15 is formed with a structure capable of reducing the degree of vacuum, for example, from 10 −6 Torr to 10 −9 Torr.
【００１６】図２はイオン注入装置の全体構成を示す説
明図である。すなわち真空容器内にイオン源２２、質量
分析器２４、およびビーム整形器２６等がイオン通路に
順次設けられ、図示しない真空排気手段により真空状態
に保持される如くイオン発生部２０が構成されている。
このイオン発生部２０と同一真空雰囲気になるように結
合された処理部３０には、被処理体たとえば複数枚の半
導体ウェハを保持し予め定められた速度で回転する回転
テーブル２８と、この回転テーブル２８に被処理体を予
め定められたプログラムで自動的に搬入搬出する搬送ア
ーム３２を備えたロボットが設けられている。FIG. 2 is an explanatory view showing the overall structure of the ion implantation apparatus. That is, the ion source 22, the mass analyzer 24, the beam shaper 26, and the like are sequentially provided in the ion passage in the vacuum container, and the ion generation unit 20 is configured so as to be kept in a vacuum state by the vacuum evacuation means (not shown). .
A rotating table 28 that holds an object to be processed, for example, a plurality of semiconductor wafers, and rotates at a predetermined speed is provided in a processing unit 30 that is connected to the ion generating unit 20 in the same vacuum atmosphere, and this rotating table. 28, a robot provided with a transfer arm 32 for automatically carrying in and out the object to be processed according to a predetermined program is provided.
【００１７】上記容器１外に設けられ処理前の被処理体
を複数枚収容したカセット３６、たとえばウェハキャリ
アを上記真空容器２内に予め定められたプログラムで自
動的に搬入搬出する搬送機構３４が設けられている。以
上の如くイオン注入装置は構成されている。A cassette 36 provided outside the container 1 and containing a plurality of unprocessed objects, for example, a transfer mechanism 34 for automatically loading and unloading a wafer carrier into and out of the vacuum container 2 according to a predetermined program. It is provided. The ion implanter is configured as described above.
【００１８】次に、上記装置の排気方法の一例について
述べる。Next, an example of the exhaust method of the above apparatus will be described.
【００１９】真空容器１内に複数枚の処理済み被処理体
たとえば半導体ウェハが収納されたカセット１０が載置
されており、上記半導体ウェハをカセット１０と共に搬
出する場合について以下説明する。大気中の水分が真空
容器１の内壁に付着することを防ぐため、真空状態でヒ
ータ４に電流を流すことにより真空容器１内を所定時間
たとえば 5分間、所定の温度たとえば 140℃に加熱す
る。その後、真空容器１内にガス供給管８から窒素ガス
を大気圧になるまで導入し大気圧になった後、上記カセ
ット１０を搬出するため、大気側ゲートバルブＧ１を開
く。次に搬送機構３４を駆動させることによって真空容
器１内の処理済みウェハの入ったカセット１０を搬出
し、処理前の半導体ウェハの入ったカセット３６を真空
容器１内に搬入する。すなわちカセット１０の入れ替え
を行う。その後、大気側のゲートバルブＧ１を閉じ、真
空容器１内を排気装置２０により所定の真空度まで排気
する。この排気処理と同時に、大気に露出されたことに
より真空容器１の内壁面上など大気中で付着した水分を
速やかに蒸発せしめ、排気処理を促進するために被処理
体である半導体ウェハは真空容器１の外周に設けたヒー
タ４および真空容器１内に設けたハロゲンランプ６を動
作させることにより所定の温度たとえば 140℃に上記１
壁を加熱し、所定の時間たとえば 5分間加熱状態を保持
する。その後、冷却循環用配管２に冷却媒体を循環させ
速度たとえば50℃/ 分から 100℃／分で所定の温度たと
えば20℃に冷却する。A case will be described below in which a cassette 10 containing a plurality of processed objects such as semiconductor wafers is placed in the vacuum container 1 and the semiconductor wafer is unloaded together with the cassette 10. In order to prevent moisture in the atmosphere from adhering to the inner wall of the vacuum container 1, an electric current is passed through the heater 4 in a vacuum state to heat the inside of the vacuum container 1 to a predetermined temperature, for example, 140 ° C. for a predetermined time, for example, 5 minutes. After that, nitrogen gas is introduced into the vacuum container 1 from the gas supply pipe 8 until the atmospheric pressure is reached, and after the atmospheric pressure is reached, the atmosphere side gate valve G1 is opened to carry out the cassette 10. Next, by driving the transfer mechanism 34, the cassette 10 containing the processed wafer in the vacuum container 1 is unloaded, and the cassette 36 containing the unprocessed semiconductor wafer is loaded in the vacuum container 1. That is, the cassette 10 is replaced. After that, the gate valve G1 on the atmosphere side is closed, and the inside of the vacuum container 1 is evacuated to a predetermined vacuum degree by the evacuation device 20. Simultaneously with this exhaust processing, the semiconductor wafer which is the object to be processed is a vacuum container in order to quickly evaporate the moisture adhering in the atmosphere such as the inner wall surface of the vacuum container 1 by being exposed to the atmosphere, and to accelerate the exhaust processing. 1 is operated at a predetermined temperature, for example, 140 ° C., by operating the heater 4 provided on the outer periphery of 1 and the halogen lamp 6 provided in the vacuum container 1.
Heat the wall and keep it heated for a certain time, for example 5 minutes. After that, a cooling medium is circulated in the cooling circulation pipe 2 to cool it to a predetermined temperature, for example, 20 ° C. at a rate of, for example, 50 ° C./minute to 100 ° C./minute.
【００２０】次に、真空容器１内が所定の真空度に達し
た後、処理部３０側のゲートバルブＧ２を開いて真空容
器１内のウェハを搬送アーム３２により回転テーブル２
８上の所定位置に搬送する。回転テーブル２８の周縁予
め定められた位置にウェハが所定枚数載置されると、当
該回転テーブル２８が垂直に起立し、イオン発生部２０
からのイオンが加速されて各ウェハに走査的にイオン注
入処理を行う。Next, after the inside of the vacuum container 1 reaches a predetermined degree of vacuum, the gate valve G2 on the processing unit 30 side is opened and the wafer in the vacuum container 1 is transferred by the transfer arm 32 to the rotary table 2.
8 to a predetermined position. When a predetermined number of wafers are placed at a predetermined position on the peripheral edge of the rotary table 28, the rotary table 28 stands upright and the ion generating unit 20.
Ions are accelerated to perform a scanning ion implantation process on each wafer.
【００２１】上記した大気圧から排気処理を行った３つ
の例について経過時間と圧力の関係を図５に示す。図５
において変化曲線は本発明の実施例方法で真空容器１
を排気処理したもので真空状態から大気圧に戻し、真空
排気開始後 5分間真空容器１内を 140℃の加熱状態を保
ち、その後、冷却を行い真空容器１を室温に戻した場合
の圧力変化の特性を示す。変化曲線は従来の排気方法
で真空容器１を真空状態から大気圧に戻した後、真空排
気を開始するまでの間、常に真空容器１を室温である20
℃に保った場合の圧力変化の特性を示す。変化曲線は
真空容器１を真空排気開始後20分間は変化曲線と同様
に室温状態を保ち、その後、真空容器１を 140℃で 5分
間保持した後、冷却を行った場合の圧力変化の特性を示
す。FIG. 5 shows the relationship between the elapsed time and the pressure for the three examples in which the exhaust processing was performed from the above atmospheric pressure. Figure 5
The change curve in the vacuum container 1 according to the embodiment of the present invention is
The pressure change when the vacuum container is heated to 140 ° C for 5 minutes after the start of vacuum evacuation and then cooled to room temperature. Shows the characteristics of. The change curve shows that the vacuum container 1 is always at room temperature until the vacuum exhaust is started after the vacuum container 1 is returned from the vacuum state to the atmospheric pressure by the conventional exhaust method.
The characteristic of pressure change when kept at ℃ is shown. The change curve shows the characteristics of the pressure change when the vacuum container 1 is kept at room temperature for 20 minutes after the vacuum evacuation is started, and then the vacuum container 1 is kept at 140 ° C for 5 minutes and then cooled. Show.
【００２２】図５の変化曲線から明らかなように、従
来の方法では大気圧から10-7Torrの真空度に到達するの
に約40分、10-8Torrに達するには約1000分かかっている
が、本発明では変化曲線からも明らかなように、各々
の真空度到達時間は約 9分および約40分と従来の方法に
比べて1/4 から1/25に排気処理時間が短縮されている。
上記実施例装置において加熱手段、冷却手段としては
真空容器１をカバーで覆い、このカバーの内に熱媒体た
とえば熱風や冷却媒体たとえば液体窒素の蒸気を導入し
てもよい。また排気処理工程において真空容器１および
被処理体を加熱して真空容器１の内壁面付着物を除去し
た後、ガス供給管８よりたとえば冷却された乾燥気体た
とえば窒素や不活性ガスのアルゴンガスを真空容器１に
所定量導入して前記真空容器１および被処理体を冷却し
てもよい。As is clear from the change curve of FIG. 5, it takes about 40 minutes to reach a vacuum degree of 10 -7 Torr from atmospheric pressure and about 1000 minutes to reach 10 -8 Torr by the conventional method. However, in the present invention, as it is clear from the change curve, the time required to reach each vacuum degree is about 9 minutes and about 40 minutes, and the exhaust treatment time is shortened from 1/4 to 1/25 compared with the conventional method. ing.
As the heating means and the cooling means in the apparatus of the above embodiment, the vacuum container 1 may be covered with a cover, and a heating medium such as hot air or a cooling medium such as liquid nitrogen vapor may be introduced into the cover. In the exhaust treatment step, after the vacuum container 1 and the object to be processed are heated to remove the deposits on the inner wall surface of the vacuum container 1, dry gas such as cooled nitrogen such as nitrogen or an inert gas such as argon gas is supplied from the gas supply pipe 8. A predetermined amount may be introduced into the vacuum container 1 to cool the vacuum container 1 and the object to be processed.
【００２３】また真空容器１を長時間たとえば 1日以上
室温状態で大気圧に放置しておいた場合にあっても、排
気開始直前たとえば 5分前から排気開始後所定の時間た
とえば 5分間加熱状態にして内壁面付着物を除去し、そ
の後、真空容器１および被処理体を冷却することで上記
と同様に排気処理時間の短縮効果がある。Even when the vacuum vessel 1 is left at room temperature for a long time, for example, for one day or more at atmospheric pressure, it is heated for a predetermined time, for example, 5 minutes immediately before the start of exhaust, for example, 5 minutes before the start of exhaust. By removing the deposits on the inner wall surface and then cooling the vacuum container 1 and the object to be processed, the effect of shortening the exhaust processing time can be obtained similarly to the above.
【００２４】実施例２
本発明方法は上記実施例装置についてのみ使用できる方
法ではなく、次に説明する第２の実施例装置についても
使用できる方法である。Embodiment 2 The method of the present invention is not only a method that can be used only with the above-mentioned apparatus of the present invention, but also a method that can be used with the apparatus of the second embodiment described below.
【００２５】本発明の真空排気方法装置を枚葉式ロード
ロック部に適用した一実施例について、図３を参照して
具体的に説明する。真空容器内壁の加熱冷却に対して熱
応答性を向上するために真空容器１は外真空容器１Ａと
内真空容器１Ｂの二重構造にしている。外真空容器１Ａ
は主に大気の圧力を受け持つために機械構造的に丈夫に
設計・製作してあり、その内側の真空度は内真空容器１
Ｂの真空度との中間たとえば1Torr から 1×10-4Torrに
なるように排気可能の如く構成されている。An embodiment in which the vacuum evacuation method apparatus of the present invention is applied to a single-wafer load lock unit will be specifically described with reference to FIG. In order to improve the thermal response to heating and cooling of the inner wall of the vacuum container, the vacuum container 1 has a double structure of an outer vacuum container 1A and an inner vacuum container 1B. Outer vacuum container 1A
Is designed and manufactured to be mechanically strong because it mainly bears the pressure of the atmosphere.
It is constructed such that it can be evacuated to an intermediate level between the vacuum degree of B and 1 × 10 −4 Torr, for example.
【００２６】内真空容器１Ｂは外真空容器１Ａの内側に
設けられる。この内真空容器１Ｂは熱伝導性が高くなる
ように設計・製作されており、その外周囲には実施例１
と同様な加熱手段４と冷却手段２が設けられている。The inner vacuum container 1B is provided inside the outer vacuum container 1A. The inner vacuum container 1B is designed and manufactured so as to have high thermal conductivity, and the outer periphery thereof is provided with the first embodiment.
Similar heating means 4 and cooling means 2 are provided.
【００２７】また前記内真空容器１Ｂの下部にはこの内
真空容器１Ｂを排気するための排気路５８が外真空容器
１Ａを貫通して設けられており、図示しない排気装置た
とえばロータリポンプ能力 250リットル／分およびたと
えばターボ分子ポンプ能力 300リットル／秒が接続さ
れ、真空たとえば10-6Torrから10-9Torrに減圧すること
が可能の如く構成されている。An exhaust passage 58 for exhausting the inner vacuum container 1B is provided in the lower part of the inner vacuum container 1B so as to penetrate the outer vacuum container 1A, and an exhaust device (not shown), for example, a rotary pump capacity of 250 liters is provided. / Min and, for example, a turbomolecular pump capacity of 300 liters / second are connected and configured so that it is possible to reduce the vacuum, for example from 10 -6 Torr to 10 -9 Torr.
【００２８】前記真空容器の両側面にはゲートバルブＧ
１、Ｇ２が被処理体たとえば半導体ウェハの搬出入のた
め設置されている。A gate valve G is provided on both sides of the vacuum container.
1 and G2 are installed for carrying in and out an object to be processed, for example, a semiconductor wafer.
【００２９】前記真空容器１Ｂには被処理体たとえば半
導体ウェハ１２を載置する、たとえばセラミック基板よ
りなるサセプタ４０が設けられる。このサセプタ４０の
断面構造を図４に示す。サセプタ４０は絶縁性セラミッ
ク４２およびこのセラミック４２内に埋設されたセラミ
ックヒータ４４よりなる加熱ヒータ部と、これを保持し
冷媒循環構造を有する上プレート４６、下プレート４８
よりなるプレート部で構成される。このプレート部には
冷媒導入口５２と排出口５４が設置され、図示しない冷
媒温度制御用装置から送出された冷媒が冷媒導入口５２
から入り、スパイラル状の冷媒循環溝５０を循環し、サ
セプタ４０を冷却した後、冷媒排出口５４から排出す
る。The vacuum container 1B is provided with a susceptor 40, for example, a ceramic substrate, on which an object to be processed, for example, a semiconductor wafer 12 is placed. The cross-sectional structure of this susceptor 40 is shown in FIG. The susceptor 40 includes a heating heater portion including an insulating ceramic 42 and a ceramic heater 44 embedded in the ceramic 42, and an upper plate 46 and a lower plate 48 that hold the heating heater portion and have a refrigerant circulation structure.
It is composed of a plate part. A refrigerant inlet 52 and an outlet 54 are installed in this plate portion, and the refrigerant sent from a refrigerant temperature control device (not shown) is used as the refrigerant inlet 52.
The cooling medium circulates in the spiral coolant circulation groove 50, cools the susceptor 40, and then discharges it from the coolant discharge port 54.
【００３０】本発明方法を説明する実施例２の真空装置
は以上のように構成されており、真空排気方法は前記実
施例１の説明と同様なため説明は省略する。The vacuum apparatus of the second embodiment for explaining the method of the present invention is constructed as described above, and the vacuum exhaust method is the same as that of the first embodiment, so the description thereof is omitted.
【００３１】上記実施例においてサセプタの加熱ヒータ
部は必ずしもセラミック材料である必要はなく、金属プ
レートへシースヒータ等を埋め込んだ構造でもよい。あ
るいは内部に設置した加熱手段であるハロゲンランプ６
によって加熱してもよい。In the above embodiment, the heater portion of the susceptor does not necessarily have to be made of a ceramic material, but may have a structure in which a sheath heater or the like is embedded in a metal plate. Alternatively, a halogen lamp 6 as a heating means installed inside
May be heated by.
【００３２】また水の沸点は真空度1Torr の時59℃に低
下するので減圧中の前記真空容器１および被処理体の加
熱温度はたとえば1Torrの時59℃以上であれば良好に作
用する。Further, the boiling point of water decreases to 59 ° C. when the degree of vacuum is 1 Torr, so that the heating temperature of the vacuum container 1 and the object to be treated during depressurization is preferably 59 ° C. or higher at 1 Torr.
【００３３】上記の実施例は本発明方法の一実施例の説
明であって、必ずしもイオン注入装置に適用するに限ら
ず酸化や拡散等の熱処理装置およびＣＶＤ装置、エッチ
ング装置等の真空容器、低圧容器またはそれらのロード
ロック室等気密容器の排気方法であればいずれに適用す
ることも可能である。The above embodiment is an explanation of one embodiment of the method of the present invention, and is not necessarily applied to an ion implantation apparatus, but a heat treatment apparatus for oxidation and diffusion, a CVD apparatus, a vacuum container such as an etching apparatus, a low pressure. It is possible to apply to any method as long as the method of exhausting the container or the airtight container such as the load lock chamber thereof is used.
【００３４】[0034]
【発明の効果】以上説明したように、本発明の排気方法
によれば大気解放した気密容器も、少なくとも容器内壁
面に付着した付着物も短時間で排気することが可能とな
る。As described above, according to the exhaust method of the present invention, it is possible to exhaust the airtight container opened to the atmosphere, and at least the deposit attached to the inner wall surface of the container in a short time.
【図１】本発明方法を説明するための実施例１に係わる
ロードロックの縦断面図。FIG. 1 is a vertical sectional view of a load lock according to a first embodiment for explaining a method of the present invention.
【図２】実施例１を適用したイオン注入装置の概略説明
図。FIG. 2 is a schematic explanatory diagram of an ion implantation apparatus to which the first embodiment is applied.
【図３】本発明方法の実施例２に係わるロードロックの
断面図。FIG. 3 is a sectional view of a load lock according to a second embodiment of the method of the present invention.
【図４】図３に用いたサセプタの構造説明図。FIG. 4 is a structural explanatory view of the susceptor used in FIG.
【図５】図１に用いた真空容器の排気特性図。5 is an exhaust characteristic diagram of the vacuum container used in FIG.
１………真空装置 ２………冷媒循環用パイプ ４………ヒータ ６………ハロゲンランプ ８………ガス供給管 １０………カセット １２………半導体ウェハ １４………排気装置 ２０………イオン発生部 ２２………イオン源 ２４………質量分析器 ２６………ビーム整形器 ２８………回転テーブル ３０………処理部 ３２………搬送アーム ３４………搬送機構 ３６………カセット ４０………サセプタ ４２………絶縁性セラミック ４４………セラミックヒータ ４６………上プレート ４８………下プレート ５０………冷媒循環溝 ５２………冷媒導入口 ５４………冷媒排出口 ５６………ザセプタ加熱用電力導線 ５８………排気路 Ｇ１………大気側ゲートバルブ Ｇ２………処理部側ゲートバルブ １Ａ………外真空容器 １Ｂ………内真空容器 1 ... Vacuum equipment 2 ……… Refrigerant circulation pipe 4 ... Heater 6 ... Halogen lamp 8 ... Gas supply pipe 10 ... Cassette 12 ... Semiconductor wafer 14 ... Exhaust device 20 ... Ion generator 22 ... Ion source 24 ………… Mass spectrometer 26 ………… Beam shaper 28 ... Rotary table 30 ......... Processing unit 32 ......... Transfer arm 34 ... Transport mechanism 36 ......... Cassette 40 ......... Susceptor 42 ... Insulating ceramic 44: Ceramic heater 46 ... Top plate 48 ... Lower plate 50 ... Refrigerant circulation groove 52 ... Refrigerant inlet 54 ... Refrigerant outlet 56 ... Power wire for heating the susceptor 58 ... Exhaust path G1 ......... atmosphere side gate valve G2: Gate valve on the processing side 1A ......... Outer vacuum container 1B: Internal vacuum container
フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/31 Ｂ 8518−4Ｍ Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 21/31 B 8518-4M
Claims (3)
も解放する以前に気密容器壁を所定の温度に加熱する工
程と、気密容器を大気解放中および上記開閉扉を閉じて
気密容器内を真空排気中の所定時間、少なくとも上記気
密容器を所定の加熱温度に維持する工程と、次に上記気
密容器を所定の温度に冷却する工程とからなることを特
徴とする排気方法。1. A step of heating the airtight container wall to a predetermined temperature before opening the opening / closing door and at least opening the airtight container to the atmosphere; and releasing the airtight container to the atmosphere and closing the opening / closing door to vacuum the inside of the airtight container. An exhaust method comprising: a step of maintaining at least the airtight container at a predetermined heating temperature for a predetermined time during evacuation; and a step of subsequently cooling the airtight container to a predetermined temperature.
るに際し、排気操作開始前より少なくとも気密容器を所
定の温度に加熱する工程と、開閉扉を閉じて気密容器内
を排気中の所定時間、少なくとも気密容器を所定の加熱
温度に維持する工程と、次に気密容器を所定の温度に冷
却する工程とからなることを特徴とする排気方法。2. A step of heating the airtight container to a predetermined temperature at least before starting the evacuation operation when the airtight container is exhausted to the atmosphere for a long time, and a step of closing the opening / closing door to exhaust the air in the airtight container. An exhaust method comprising: a step of maintaining at least a predetermined heating temperature of the airtight container for a period of time, and a step of subsequently cooling the airtight container to a predetermined temperature.
密容器を所定の温度に加熱する工程と、開閉扉を閉じて
気密容器内を排気中の所定時間、少なくとも気密容器を
所定の加熱温度に維持する工程と、次に気密容器を所定
の温度に冷却する工程とからなることを特徴とする排気
方法。3. A step of heating at least the airtight container to a predetermined temperature while the airtight container is being opened to the atmosphere, and a predetermined heating temperature of at least the airtight container for a predetermined time during which the opening / closing door is closed and the air in the airtight container is exhausted. An exhaust method comprising a step of maintaining and a step of subsequently cooling the airtight container to a predetermined temperature.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18624191A JP3238427B2 (en) | 1991-07-25 | 1991-07-25 | Airtight container exhaust method for loading and unloading an object to be processed into an ion implantation apparatus |
| KR1019920009231A KR0155572B1 (en) | 1991-05-28 | 1992-05-28 | Decompression Treatment System and Decompression Treatment Method |
| US07/889,378 US5314541A (en) | 1991-05-28 | 1992-05-28 | Reduced pressure processing system and reduced pressure processing method |
| US08/187,723 US5455082A (en) | 1991-05-28 | 1994-01-28 | Reduced pressure processing system and reduced pressure processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18624191A JP3238427B2 (en) | 1991-07-25 | 1991-07-25 | Airtight container exhaust method for loading and unloading an object to be processed into an ion implantation apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0529448A true JPH0529448A (en) | 1993-02-05 |
| JP3238427B2 JP3238427B2 (en) | 2001-12-17 |
Family
ID=16184824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18624191A Expired - Fee Related JP3238427B2 (en) | 1991-05-28 | 1991-07-25 | Airtight container exhaust method for loading and unloading an object to be processed into an ion implantation apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3238427B2 (en) |
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| JP2017224608A (en) * | 2014-06-27 | 2017-12-21 | アクセリス テクノロジーズ， インコーポレイテッド | System and method for heated ion implantation achieving high processing capability |
| CN111566795A (en) * | 2018-01-31 | 2020-08-21 | 艾克塞利斯科技公司 | Reduce outgassing effects on process chambers with chamber pumping and purging |
| JP2021512484A (en) * | 2018-01-31 | 2021-05-13 | アクセリス テクノロジーズ， インコーポレイテッド | Outgassing effects on process chamber reduction by chamber pumps and purges |
| CN111566795B (en) * | 2018-01-31 | 2024-06-04 | 艾克塞利斯科技公司 | Reducing outgassing effects on a process chamber by chamber pumping and purging |
| CN113491002A (en) * | 2019-01-04 | 2021-10-08 | 艾克塞利斯科技公司 | Reduction of condensation gas on chamber walls via heated chamber housings for semiconductor processing equipment |
| CN113491002B (en) * | 2019-01-04 | 2024-06-11 | 艾克塞利斯科技公司 | Reducing condensed gases on chamber walls via a heated chamber housing for semiconductor processing equipment |
| KR20200140540A (en) * | 2019-06-07 | 2020-12-16 | 주식회사 케이씨텍 | Substrate processing apparatus |
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| JP3238427B2 (en) | 2001-12-17 |
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