JPH05299542A - Heat dissipation type semiconductor chip carrier and semiconductor device - Google Patents

Heat dissipation type semiconductor chip carrier and semiconductor device

Info

Publication number
JPH05299542A
JPH05299542A JP4103072A JP10307292A JPH05299542A JP H05299542 A JPH05299542 A JP H05299542A JP 4103072 A JP4103072 A JP 4103072A JP 10307292 A JP10307292 A JP 10307292A JP H05299542 A JPH05299542 A JP H05299542A
Authority
JP
Japan
Prior art keywords
semiconductor chip
metal plate
heat dissipation
chip carrier
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4103072A
Other languages
Japanese (ja)
Inventor
Toshimasa Kitagawa
利正 北川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP4103072A priority Critical patent/JPH05299542A/en
Publication of JPH05299542A publication Critical patent/JPH05299542A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

(57)【要約】 (修正有) 【目的】 未充填部分がなく外観が良好で耐湿性優れた
半導体装置を得る。 【構成】 絶縁基板3に取付けられた金属板1の外側露
出表面に、金属板1の一端から他端まで溝状の凹部2を
有する放熱型半導体チップキャリアとこの放熱型半導体
チップキャリアの半導体チップ搭載用凹部7に実装され
た半導体チップを有し、この半導体チップの樹脂封止の
封止樹脂組成物8によって前記の溝状の凹部2の充填と
外殻体9の形成とが一体的になされている半導体装置。
(57) [Summary] (Modified) [Purpose] To obtain a semiconductor device that has no unfilled part, has a good appearance, and has excellent moisture resistance. A heat dissipation type semiconductor chip carrier having a groove-shaped recess 2 from one end to the other end of the metal plate 1 on an outer exposed surface of the metal plate 1 attached to an insulating substrate 3, and a semiconductor chip of this heat dissipation type semiconductor chip carrier. It has a semiconductor chip mounted in the mounting recess 7, and the filling of the groove-shaped recess 2 and the formation of the outer shell body 9 are integrally performed by the sealing resin composition 8 for resin sealing of the semiconductor chip. Semiconductor device being made.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体チップの搭載
に用いられる半導体チップキャリア及び半導体チップが
搭載され樹脂封止された半導体装置に関するものであ
り、特に放熱性に優れた半導体チップキャリア及び半導
体装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor chip carrier used for mounting a semiconductor chip and a semiconductor device in which the semiconductor chip is mounted and resin-sealed, and particularly to a semiconductor chip carrier and a semiconductor excellent in heat dissipation. It relates to the device.

【0002】[0002]

【従来の技術】半導体チップキャリアを構成する絶縁基
板にはガラス布を基材としたエポキシ樹脂積層板などの
プリント配線板が、近年用いられるようになってきてい
る。しかし、このようなプリント配線板では熱の伝導性
が悪く、搭載された半導体チップからの発熱を良好に放
熱をすることができない。
2. Description of the Related Art In recent years, a printed wiring board such as an epoxy resin laminated board using glass cloth as a base material has been used as an insulating substrate constituting a semiconductor chip carrier. However, in such a printed wiring board, heat conductivity is poor, and heat generated from the mounted semiconductor chip cannot be radiated well.

【0003】かかる問題点を解決した放熱型半導体チッ
プキャリアが実開昭61-38997号公報に開示されている。
この開示技術を図5の断面図に例示する。絶縁基板3の
表面に導体回路5が形成され、該導体回路5の反対面で
ある基板裏面には凹部2及び凸部15が片面に形成され
反対側の面が平らな金属板1が接着剤4を介して貼着さ
れ、かつ前記絶縁基板3の表面には金属板1の平らな部
分が露出するように半導体チップ搭載用凹部7が形成さ
れた半導体チップ搭載用基板であり、金属板1の表面に
凹部2及び凸部15を配設する目的は、放熱面積の増大
による放熱性の改良にあり、樹脂封止における成形性に
ついて示唆する記載はない。
A heat radiation type semiconductor chip carrier which solves the above problems is disclosed in Japanese Utility Model Laid-Open No. 61-38997.
This disclosed technique is illustrated in the cross-sectional view of FIG. A conductor circuit 5 is formed on the surface of the insulating substrate 3, and a concave portion 2 and a convex portion 15 are formed on one surface on the back surface of the substrate, which is the opposite surface of the conductor circuit 5, and a metal plate 1 having a flat opposite surface is formed by an adhesive. 4 is a semiconductor chip mounting substrate having a semiconductor chip mounting recess 7 formed on the surface of the insulating substrate 3 so that the flat portion of the metal plate 1 is exposed. The purpose of arranging the concave portions 2 and the convex portions 15 on the surface is to improve the heat radiation performance by increasing the heat radiation area, and there is no description suggesting the moldability in resin sealing.

【0004】また、図6に他の従来例の断面図を示す。
放熱用の金属板1を埋入して樹脂封止する半導体装置に
おいては、この金属板1の固着を確実にする工夫とし
て、外側に向かって萎むような傾斜側面、段違いを設け
ることがなされる。図7はこの半導体装置を得る樹脂封
止の際の、溶融した封止樹脂成形材料の流れを示す平面
図である。金属板1に溝状の凹部がないので溶融した封
止樹脂成形材料はゲート14から金型に入った後、金属
板1に邪魔され矢印のように2手に分かれ金型の最も奥
の部分で合流することになり、この合流点において未充
填を生じ易い問題を有していた。
FIG. 6 shows a sectional view of another conventional example.
In a semiconductor device in which a metal plate 1 for heat dissipation is embedded and resin-sealed, as a device for ensuring the fixation of the metal plate 1, an inclined side surface and a step difference that shrinks outward are provided. .. FIG. 7 is a plan view showing the flow of the molten encapsulating resin molding material during resin encapsulation for obtaining this semiconductor device. Since the metal plate 1 does not have a groove-shaped recess, the molten sealing resin molding material enters the mold from the gate 14 and then is interrupted by the metal plate 1 and divided into two hands as shown by the arrow, which is the innermost part of the mold. Therefore, there is a problem that unfilling is likely to occur at this merging point.

【0005】[0005]

【発明が解決しようとする課題】本発明の目的は、放熱
型半導体チップキャリアを樹脂封止して形成するときの
封止樹脂成形材料の流れを良好にし、該成形材料の未充
填のない半導体装置が形成できる放熱型半導体チップキ
ャリアを提供しようとする。
SUMMARY OF THE INVENTION It is an object of the present invention to improve the flow of an encapsulating resin molding material when a heat dissipation type semiconductor chip carrier is resin-encapsulated and to form a semiconductor without unfilling the molding material. An attempt is made to provide a heat dissipation type semiconductor chip carrier that can be formed into a device.

【0006】本発明の他の目的は、外観が良好で耐湿性
優れた半導体装置を提供しようとする。
Another object of the present invention is to provide a semiconductor device having a good appearance and excellent moisture resistance.

【0007】[0007]

【課題を解決するための手段】上記の点に鑑みて為され
た第1の発明は、その特徴が絶縁基板に取付けられた金
属板の外側露出表面に、金属板の一端から他端まで溝状
の凹部を有する放熱型半導体チップキャリアにあり、第
2の発明は、その特徴が前記溝状の凹部に充填された封
止樹脂組成物によって外殻体が一体形成されてなる半導
体装置にある。
The first invention made in view of the above points is characterized in that a groove is formed from one end to the other end of the metal plate on the outer exposed surface of the metal plate attached to the insulating substrate. A heat-dissipating semiconductor chip carrier having a groove-shaped recess, and a second aspect of the present invention is a semiconductor device in which an outer shell is integrally formed with the sealing resin composition filled in the groove-shaped recess. ..

【0008】[0008]

【実施例】以下に、本発明の一実施例を図面に基づいて
説明する。なお、本発明はこれら実施例に限定されるも
のではない。
An embodiment of the present invention will be described below with reference to the drawings. The present invention is not limited to these examples.

【0009】図1(A)は第1の本発明の一実施例を示
す断面図であり、図1(B)はその斜視図である。半導
体チップキャリアは四角形の絶縁基板3と、この絶縁基
板3の略中央に形成された貫通穴を閉じて半導体チップ
搭載用凹部7を形成するように接着剤4で取付けられた
金属板1と、絶縁基板3の表面に配設された導体回路5
と、この導体回路5の一端に接合して取付けられた外部
端子6とからなり、前記金属板1の外側露出面に、金属
板1の一端から他端まで溝状の凹部2がV字の断面形状
で平行線状に形成されている。図1(C)は第2の本発
明の一実施例の斜視図である。前記放熱型半導体チップ
キャリアの凹部7に半導体チップを搭載し、半導体チッ
プと絶縁基板の表面に配設された導体回路の一端を金線
でワイヤーボンデングしたものを成形金型にセットし、
樹脂封止して得られた半導体装置である。放熱用の金属
板1の表面において金属板の一端から他端へ形成された
溝状の凹部2に封止樹脂組成物8が充填して形成されて
いる。この溝状の凹部2に充填される封止樹脂組成物8
は放熱型半導体チップキャリアの外郭成形と同時に充填
される。したがって、この溝に充填した封止樹脂8は半
導体装置の外殻体9と一体のものなので、放熱用の金属
板1は封止樹脂組成物8で取り囲むように半導体装置に
確実に固着されることになり、金属板1の動きを抑制し
たり、外れることを阻止する。
FIG. 1A is a sectional view showing an embodiment of the first present invention, and FIG. 1B is a perspective view thereof. The semiconductor chip carrier has a rectangular insulating substrate 3, a metal plate 1 attached with an adhesive 4 so as to close a through hole formed in a substantially central portion of the insulating substrate 3 and form a semiconductor chip mounting recess 7. Conductor circuit 5 provided on the surface of the insulating substrate 3
And an external terminal 6 attached to one end of the conductor circuit 5 and attached to the outer exposed surface of the metal plate 1 from the one end to the other end of the metal plate 1 having a V-shaped groove 2. The cross-sectional shape is formed in parallel lines. FIG. 1C is a perspective view of an embodiment of the second invention. A semiconductor chip is mounted in the recess 7 of the heat dissipation type semiconductor chip carrier, and one end of a conductor circuit disposed on the surface of the semiconductor chip and the insulating substrate is wire-bonded with a gold wire and set in a molding die,
It is a semiconductor device obtained by resin sealing. On the surface of the metal plate 1 for heat dissipation, the groove-shaped recess 2 formed from one end to the other end of the metal plate is filled with the sealing resin composition 8. Sealing resin composition 8 filled in the groove-shaped recess 2
Is filled at the same time when the heat radiation type semiconductor chip carrier is molded. Therefore, since the sealing resin 8 filled in the groove is integral with the outer shell 9 of the semiconductor device, the metal plate 1 for heat dissipation is securely fixed to the semiconductor device so as to be surrounded by the sealing resin composition 8. Therefore, the movement of the metal plate 1 is suppressed and the metal plate 1 is prevented from coming off.

【0010】図2(A)は第1の本発明の他の一実施例
を示す断面図であり、図2(B)はその斜視図であり、
図1のものに比べ、金属板1の表面に形成された溝状の
凹部2の形状がU字で網目状に形成されたところに違い
のある放熱型半導体チップキャリアである。図2(C)
の斜視図はこの放熱型半導体チップキャリアを用いた第
2の本発明の半導体装置である。図1(D)はその断面
図であり、前記放熱型半導体チップキャリアの凹部7に
半導体チップ16を搭載し、半導体チップ16と絶縁基
板3の表面に配設された導体回路5の一端を金線10で
ワイヤーボンデングしたものを成形金型にセットし、樹
脂封止して得られた半導体装置である。放熱用の金属板
1の表面において、金属板1の一端から他端へ形成され
た溝状の凹部2に封止樹脂組成物8が充填して形成され
ている。この溝状の凹部2に充填した封止樹脂組成物8
は半導体装置の外殻体9と一体のものなので、放熱用の
金属板1は封止樹脂組成物8で取り囲むように半導体装
置に確実に固着されることになり、金属板1の動きを抑
制したり、外れることを阻止する。
FIG. 2A is a sectional view showing another embodiment of the first present invention, and FIG. 2B is a perspective view thereof.
The heat dissipation type semiconductor chip carrier is different from that of FIG. 1 in that the shape of the groove-shaped recess 2 formed on the surface of the metal plate 1 is U-shaped and mesh-shaped. Figure 2 (C)
Is a perspective view of a semiconductor device of the second present invention using this heat dissipation type semiconductor chip carrier. FIG. 1D is a cross-sectional view thereof, in which the semiconductor chip 16 is mounted in the concave portion 7 of the heat dissipation type semiconductor chip carrier, and one end of the conductor circuit 5 disposed on the surface of the semiconductor chip 16 and the insulating substrate 3 is gold. A semiconductor device obtained by wire-bonding with wire 10 is set in a molding die and resin-sealed. On the surface of the metal plate 1 for heat dissipation, the groove-shaped recess 2 formed from one end to the other end of the metal plate 1 is filled with the sealing resin composition 8. Sealing resin composition 8 filled in the groove-shaped recess 2
Is integrated with the outer shell 9 of the semiconductor device, the metal plate 1 for heat dissipation is securely fixed to the semiconductor device so as to be surrounded by the sealing resin composition 8, and the movement of the metal plate 1 is suppressed. To prevent or disengage.

【0011】放熱用の金属板1の表面において金属板の
一端から他端へ形成された溝状の凹部2の断面形状は、
V字、U字、角形、半円形などを適宜用いることができ
る。また、放熱用の金属板1に形成される溝状の凹部の
形状は、金属板の一端から他端へ平行なものや網目状に
クロスするものなどを用いることができる。中でも金属
板の一端から他端へ平行なものが好ましい。それは、封
止樹脂成形材料が金型内を円滑に流れるからである。
The cross-sectional shape of the groove-shaped recess 2 formed on the surface of the metal plate 1 for heat dissipation from one end to the other end of the metal plate is
V-shaped, U-shaped, rectangular, semicircular, etc. can be used as appropriate. Further, as the shape of the groove-shaped recess formed in the metal plate 1 for heat dissipation, it is possible to use a parallel shape from one end of the metal plate to the other end or a cross shape in a mesh shape. Among them, a metal plate parallel to one end to the other end is preferable. This is because the sealing resin molding material smoothly flows in the mold.

【0012】放熱用の金属板1に溝状の凹部2を形成す
る方法としては、大サイズの金属板から打ち抜かれたり
切り出だされた所定の金属板を再度、パンチングによる
ダブルパンチングや切削によって放熱用に仕立てること
ができるのは勿論、図3(A)の斜視図に示した放熱用
金属板の加工方法を用いることができる。大サイズの金
属板1Mをダイ金型13と溝を形成するための突起部1
1を有するポンチ金型12の間に挿入し、一度のパンチ
ング加工によって図3(B)の斜視図に示すような金属
板1の一端から他端へ溝状の凹部2を有する所定寸法の
放熱用の金属板1を得ることができる。
As a method of forming the groove-shaped recess 2 in the heat-dissipating metal plate 1, a predetermined metal plate punched or cut out from a large-sized metal plate is re-punched by double punching or cutting. Not only can it be tailored for heat dissipation, but the method of processing a metal plate for heat dissipation shown in the perspective view of FIG. 3A can be used. A large metal plate 1M is provided with a die 1 and a protrusion 1 for forming a groove.
1 is inserted between punch dies 12 each having one and punched once to dissipate heat of a predetermined size having a groove-shaped recess 2 from one end to the other end of the metal plate 1 as shown in the perspective view of FIG. 3 (B). The metal plate 1 for can be obtained.

【0013】図4は、本発明の前記の放熱型半導体チッ
プキャリアを樹脂封止するときの封止樹脂成形材料の流
路を示した平面図である。半導体チップキャリアを樹脂
封止する際に、金型のゲート位置14に対して、溶融し
た封止樹脂成形材料が円滑に流れるように放熱用の金属
板1の表面に溝状の凹部2を形成することによって、溶
融した封止樹脂が溝状の凹部2や金型内を通って金型の
最も奥の部分まで硬化が殆ど進行しない内に素早く流れ
て充填するので成形品である半導体装置に未充填が生じ
にくい。したがって、放熱用の金属板1に溝状の凹部2
を形成することによって高度な成形技術や高価な金型を
用いることなく、未充填部分のない外殻体の半導体装置
を得ることができる。
FIG. 4 is a plan view showing the flow path of the encapsulating resin molding material when resin-encapsulating the heat dissipation type semiconductor chip carrier of the present invention. When the semiconductor chip carrier is resin-sealed, the groove-shaped recess 2 is formed on the surface of the metal plate 1 for heat dissipation so that the molten sealing resin molding material can smoothly flow to the gate position 14 of the mold. By doing so, the molten sealing resin flows through the groove-shaped recess 2 or the mold and reaches the innermost part of the mold while the curing hardly progresses, so that the molten resin fills the semiconductor device as a molded product. Not easily filled. Therefore, the groove-shaped recess 2 is formed in the metal plate 1 for heat dissipation.
By forming the above, it is possible to obtain an outer shell semiconductor device having no unfilled portion without using an advanced molding technique or an expensive mold.

【0014】絶縁基板3としては、基材に樹脂を含浸乾
燥して得られたプリプレグの樹脂を硬化させた絶縁材料
が用いられる。ここで絶縁材料の樹脂としては耐熱性、
耐湿性に優れかつ樹脂純度、特にイオン性不純物の少な
いものが好ましい。具体的には、エポキシ樹脂、ポリイ
ミド樹脂、フッ素樹脂、フェノ−ル樹脂、不飽和ポリエ
ステル樹脂、PPO樹脂などが適している。なお絶縁材
料の基材としては、特に限定するものではないが、ガラ
ス繊維などの無機材料の方が耐熱性、耐湿性などに優れ
好ましい。また、耐熱性に優れた有機繊維布基材及びこ
れらの混成物を用いることもできる。
As the insulating substrate 3, an insulating material obtained by hardening a resin of a prepreg obtained by impregnating and drying a base material with a resin is used. Here, the insulating material resin has heat resistance,
It is preferable that the resin has excellent moisture resistance and resin purity, especially less ionic impurities. Specifically, epoxy resin, polyimide resin, fluororesin, phenol resin, unsaturated polyester resin, PPO resin and the like are suitable. The base material of the insulating material is not particularly limited, but an inorganic material such as glass fiber is preferable because it has excellent heat resistance and moisture resistance. Further, it is also possible to use an organic fiber cloth substrate having excellent heat resistance and a mixture thereof.

【0015】本発明の金属板1としては銅板、銅合金
板、銅−インバ−−銅合金板、鉄−ニッケル合金板、そ
の他鋼板、鉄板、アルミニウム板などを適宜使用するこ
とができる。また、これら金属板の表面に金めっきなど
放熱性と腐食性に優れた保護被膜を形成したものを用い
ることができる。
As the metal plate 1 of the present invention, a copper plate, a copper alloy plate, a copper-invar-copper alloy plate, an iron-nickel alloy plate, other steel plates, iron plates, aluminum plates and the like can be appropriately used. Further, it is possible to use those obtained by forming a protective coating having excellent heat dissipation and corrosiveness such as gold plating on the surface of these metal plates.

【0016】半導体装置の外殻体9を形成するとともに
放熱用の金属板1に形成された溝状の凹部2に充填され
る封止樹脂成形材料の樹脂組成物の樹脂としては、エポ
キシ樹脂、ポリイミド樹脂、不飽和ポリエステル樹脂、
シリコーン樹脂などを単独、変性、混合組み合わせて用
いることができる。
The resin of the resin composition of the encapsulating resin molding material that forms the outer shell 9 of the semiconductor device and fills the groove-shaped recess 2 formed in the metal plate 1 for heat dissipation is epoxy resin, Polyimide resin, unsaturated polyester resin,
Silicone resins and the like can be used alone, modified, or mixed and used.

【0017】第1の本発明の放熱型半導体チップキャリ
アは半導体チップ搭載用凹部7の底面が金属板1で形成
され、搭載された半導体チップ9から発生する熱は金属
板1に吸収され、空気中に効率良く放熱され、熱が金属
板1にこもることがない。さらに金属板1に熱伝導性に
優れたヒートシンクを取り付けることによって、一層放
熱効果を増加させることもできる。したがって、I/O
端子を多く必要とし発熱の大きな高集積化、高機能化、
高速化対応の半導体チップキャリアとして適する。
In the heat dissipation type semiconductor chip carrier of the first aspect of the present invention, the bottom surface of the semiconductor chip mounting concave portion 7 is formed of the metal plate 1, and the heat generated from the mounted semiconductor chip 9 is absorbed by the metal plate 1 and air. The heat is efficiently dissipated inside and the heat is not trapped in the metal plate 1. Furthermore, by attaching a heat sink having excellent thermal conductivity to the metal plate 1, the heat radiation effect can be further increased. Therefore, I / O
Large number of terminals required, large heat generation, high integration, high functionality,
Suitable as a semiconductor chip carrier for high speed.

【0018】[0018]

【作用】放熱型半導体チップキャリアを樹脂封止する
時、溶融した封止樹脂成形材料は、金型の各ゲートから
キャビティ内に入り放熱型半導体チップキャリアに配設
された金属板の表面に一端から他端まで形成された溝状
の凹部と金属板の周囲を通って充填していく。この場
合、溶融した封止樹脂の流路が多いので封止樹脂材料の
硬化が殆ど進行しない内に素早く円滑に金型に充填し、
溶融樹脂の合流点での相溶も円滑に進むので、金型内の
空気と封止樹脂との入替えが円滑にできるので未充填が
発生しにくくなるものと考えられる。
When the heat-dissipating semiconductor chip carrier is resin-sealed, the molten encapsulating resin molding material enters the cavity from each gate of the mold and is temporarily attached to the surface of the metal plate disposed on the heat-dissipating semiconductor chip carrier. To the other end, it is filled through the groove-shaped concave portion and the periphery of the metal plate. In this case, since there are many channels of the molten sealing resin, the mold is quickly and smoothly filled while the curing of the sealing resin material hardly progresses,
It is considered that since the compatibility of the molten resin at the confluence point also progresses smoothly, the air in the mold and the sealing resin can be exchanged smoothly, so that no unfilling occurs.

【0019】[0019]

【発明の効果】本発明の放熱型半導体チップキャリアの
構造によって、放熱型半導体チップキャリアを樹脂封止
して形成するときの封止樹脂成形材料の流れを良好に
し、封止樹脂成形材料の未充填のない半導体装置が形成
できる。未充填がない半導体装置なので、外観が良好で
耐湿性優れた半導体装置を得ることができる。
According to the structure of the heat dissipation type semiconductor chip carrier of the present invention, the flow of the encapsulation resin molding material when forming the heat dissipation type semiconductor chip carrier by resin encapsulation is improved, and the encapsulation resin molding material is not A semiconductor device without filling can be formed. Since the semiconductor device is not unfilled, a semiconductor device having a good appearance and excellent moisture resistance can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】(A)第1の本発明の一実施例を示す断面図で
ある。 (B)図1(A)の斜視図である。 (C)図1(B)を用いた第2の本発明の一実施例を示
す斜視図である。
FIG. 1A is a sectional view showing an embodiment of the first present invention. (B) It is a perspective view of FIG. (C) is a perspective view showing an embodiment of the second invention using FIG. 1 (B).

【図2】(A)第1の本発明の他の一実施例を示す断面
図である。 (B)図2(A)の斜視図である。 (C)図2(B)を用いた第2の本発明の一実施例を示
す斜視図である。 (D)図2(C)の断面図である。
FIG. 2 (A) is a cross-sectional view showing another embodiment of the first present invention. (B) It is a perspective view of FIG. FIG. 3C is a perspective view showing an embodiment of the second invention using FIG. 2B. (D) It is sectional drawing of FIG. 2 (C).

【図3】(A) 本発明の放熱用金属板の加工を示す斜
視図である。 (B) 図3(A)で得られた放熱用金属板を示す斜視
図である。
FIG. 3 (A) is a perspective view showing processing of the metal plate for heat dissipation of the present invention. (B) It is a perspective view which shows the metal plate for heat radiation obtained in FIG. 3 (A).

【図4】本発明の一実施例を示す平面図である。FIG. 4 is a plan view showing an embodiment of the present invention.

【図5】一従来例を示す断面図である。FIG. 5 is a sectional view showing a conventional example.

【図6】他の一従来例を示す断面図である。FIG. 6 is a cross-sectional view showing another conventional example.

【図7】一従来例を示す平面図である。FIG. 7 is a plan view showing a conventional example.

【符号の説明】[Explanation of symbols]

1 金属板 2 凹部 3 絶縁基板 4 接着剤 5 導体回路 6 外部端子 7 半導体チップ搭載用凹部 8 封止樹脂組成物 9 外殻体 10 金線 11 突起部 12 ポンチ金型 13 ダイ金型 14 ゲート 15 凸部 16 半導体チップ 1M 大サイズの金属板 DESCRIPTION OF SYMBOLS 1 Metal plate 2 Recessed part 3 Insulating substrate 4 Adhesive 5 Conductor circuit 6 External terminal 7 Recessed part for mounting semiconductor chip 8 Sealing resin composition 9 Outer shell 10 Gold wire 11 Projection part 12 Punch die 13 Die die 14 Gate 15 Convex part 16 Semiconductor chip 1M Large size metal plate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 絶縁基板に取付けられた金属板の外側露
出表面に、金属板の一端から他端まで溝状の凹部を有す
ることを特徴とする放熱型半導体チップキャリア。
1. A heat dissipation type semiconductor chip carrier, characterized in that a metal plate attached to an insulating substrate has a groove-shaped recess on the outer exposed surface of the metal plate from one end to the other end.
【請求項2】 請求項1記載の溝状の凹部に充填された
封止樹脂組成物によって外殻体が一体形成されてなるこ
とを特徴とする半導体装置。
2. A semiconductor device, wherein an outer shell is integrally formed by the sealing resin composition filled in the groove-shaped recess according to claim 1.
JP4103072A 1992-04-22 1992-04-22 Heat dissipation type semiconductor chip carrier and semiconductor device Pending JPH05299542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4103072A JPH05299542A (en) 1992-04-22 1992-04-22 Heat dissipation type semiconductor chip carrier and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4103072A JPH05299542A (en) 1992-04-22 1992-04-22 Heat dissipation type semiconductor chip carrier and semiconductor device

Publications (1)

Publication Number Publication Date
JPH05299542A true JPH05299542A (en) 1993-11-12

Family

ID=14344453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4103072A Pending JPH05299542A (en) 1992-04-22 1992-04-22 Heat dissipation type semiconductor chip carrier and semiconductor device

Country Status (1)

Country Link
JP (1) JPH05299542A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013161956A (en) * 2012-02-06 2013-08-19 Mitsubishi Electric Corp Semiconductor device
JP2013258387A (en) * 2012-05-15 2013-12-26 Rohm Co Ltd Power-module semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013161956A (en) * 2012-02-06 2013-08-19 Mitsubishi Electric Corp Semiconductor device
JP2013258387A (en) * 2012-05-15 2013-12-26 Rohm Co Ltd Power-module semiconductor device
US9691673B2 (en) 2012-05-15 2017-06-27 Rohm Co., Ltd. Power module semiconductor device
JP2018061066A (en) * 2012-05-15 2018-04-12 ローム株式会社 Power module semiconductor device

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