JPH0530059B2 - - Google Patents
Info
- Publication number
- JPH0530059B2 JPH0530059B2 JP59239487A JP23948784A JPH0530059B2 JP H0530059 B2 JPH0530059 B2 JP H0530059B2 JP 59239487 A JP59239487 A JP 59239487A JP 23948784 A JP23948784 A JP 23948784A JP H0530059 B2 JPH0530059 B2 JP H0530059B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- capillary
- metal wire
- noble metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01551—Changing the shapes of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07141—Means for applying energy, e.g. ovens or lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
Landscapes
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は非貴金属ワイヤボンデイング方法に
関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] This invention relates to a non-noble metal wire bonding method.
半導体工業の急速な発展にともない工程の自動
化が実行されているが、そのうちワイヤボンデイ
ングはまさにその主流となつている。この現在実
用されているワイヤボンデイング装置は金線を用
いたものが主流であるが、大量生産になると、金
線の価格がコストに大きく影響する。そのため金
代替ワイヤの開発が古くから行なわれている。し
かし、金線のような接合性のよい金代替ワイヤ用
の高速ワイヤボンダはまだ開発されていないのが
現状である。これは、ボール形成時の雰囲気、ボ
ンデイング時の雰囲気が問題であるとして、これ
らの雰囲気を還元性ガス或いは不活性ガス雰囲気
にするなどの提案が多数なされている例えば特開
昭54−160540号、特開昭55−123198号、実開昭55
−74044号、特開昭50−140062号、特開昭57−
169918号、特開昭58−199563号、特開昭57−
13747号などに開示されている通りである。
With the rapid development of the semiconductor industry, process automation is being carried out, and wire bonding has become the mainstream. Most of the wire bonding devices currently in use use gold wire, but when it comes to mass production, the price of the gold wire has a large impact on the cost. Therefore, the development of gold substitute wires has been carried out for a long time. However, at present, a high-speed wire bonder for gold substitute wires with good bonding properties, such as gold wires, has not yet been developed. This problem is caused by the atmosphere during ball formation and the atmosphere during bonding, and many proposals have been made to change these atmospheres to reducing gas or inert gas atmospheres. Japanese Unexamined Patent Publication No. 123198, 1982, U.S. Pat.
-74044, JP-A No. 140062, JP-A-57-
No. 169918, JP-A-58-199563, JP-A-57-
As disclosed in No. 13747, etc.
しかしながら、上記のような技術を用いて非貴
金属ワイヤをボンデイングしても安定して接合が
得られず、歩留り、信頼性などが悪く実用的でな
い。特に非貴金属ワイヤとして銅(Cu)ワイヤ
を用いたボンデイングの場合、被接合物例えばリ
ードフレームや半導体素子のボンデイング部をヒ
ータステージ上に載置して例えば150℃〜350℃程
度の加熱状態で加圧し、超音波ワイヤボンデイン
グする必要があるため、この熱の上昇気流中即ち
この温度雰囲気にCuワイヤが晒されると酸化反
応の大きいCuワイヤ表面はたちまち酸化され、
これがボール形成性及び接合性を低下させる原因
と判つた。上記ヒータによる高熱の影響はキヤピ
ラリ内やさらにクランパ側でも反応する場合があ
る。従つて酸化したワイヤがキヤピラリー先端に
導びかれ、ここで電気トーチにより放電させても
酸化したワイヤの場合には不活性又は還元性ガス
雰囲気中で放電時ワイヤ先端が溶融しにくく、ボ
ール形成性が著しく牴下しボンデイング不良とな
ることが判つた。さらに2ndボンデイングでウエ
ツジボンデイングを実行しても、ワイヤ表面が酸
化していると、被接合面例えばリードフームの銀
メツキ面との接合強度が小さいという問題があつ
た。 However, even if non-noble metal wires are bonded using the above technique, stable bonding cannot be obtained, and the yield and reliability are poor, making it impractical. Particularly in the case of bonding using copper (Cu) wire as a non-noble metal wire, the bonding part of the object to be bonded, such as a lead frame or a semiconductor element, is placed on a heater stage and heated to a temperature of, for example, 150°C to 350°C. Because it is necessary to apply pressure and ultrasonic wire bonding, when the Cu wire is exposed to this temperature atmosphere, the surface of the Cu wire, which undergoes a large oxidation reaction, is immediately oxidized.
This was found to be the cause of deteriorating ball formability and bondability. The effects of the high heat generated by the heater may react within the capillary and even on the clamper side. Therefore, even if the oxidized wire is guided to the tip of the capillary and discharged with an electric torch, the tip of the oxidized wire will not easily melt during the discharge in an inert or reducing gas atmosphere, resulting in poor ball-forming properties. It was found that there was significant delamination, resulting in poor bonding. Furthermore, even when wedge bonding is performed in the second bonding process, if the wire surface is oxidized, there is a problem that the bonding strength with the surface to be bonded, such as the silver-plated surface of the lead frame, is low.
この発明は上記点に鑑みなされたもので、非貴
金属ワイヤにより良好な信頼性あるボンデイング
が得られる非貴金属ワイヤボンデイング方法を提
供するものである。
The present invention has been made in view of the above points, and provides a non-noble metal wire bonding method that allows good and reliable bonding to be obtained using non-noble metal wires.
すなわち、本願発明は、スプールに巻装された
非貴金属ワイヤをボンデイングツール中に挿通さ
せ、このボンデイングツールを通過したワイヤを
被ボンデイング位置にボンデイングするに際し、
上記非貴金属ワイヤに還元作用を施した後ボンデ
イングすることを特徴とする非貴金属ワイヤボン
デイング方法を得るものである。
That is, in the present invention, when a non-precious metal wire wound around a spool is inserted into a bonding tool and the wire that has passed through the bonding tool is bonded to a position to be bonded,
The present invention provides a non-noble metal wire bonding method characterized in that bonding is performed after subjecting the non-noble metal wire to a reduction action.
次に本発明方法の実施例を図面を参照して説明
する。非貴金属(卑金属)ワイヤ例えばCu,Al,
およびこれらの合金などのうちCuワイヤを用い
たワイヤボンデイングについて説明する。
Next, embodiments of the method of the present invention will be described with reference to the drawings. Non-noble metal (base metal) wire such as Cu, Al,
And wire bonding using Cu wire among these alloys will be explained.
Cuワイヤ1の走行路のボンデイングツール例
えばキヤピラリ2内にワイヤ1が滞在している時
にCuワイヤ1の少なくとも表面を還元したCuワ
イヤ1の先端に金属球3を作り、この金属球3を
ボンデイング部例えばICのボンデイングパツド
4にボールボンデイングする場合の実施例を説明
する。 Bonding tool for the Cu wire 1 travel path For example, when the wire 1 is staying in the capillary 2, a metal ball 3 is made at the tip of the Cu wire 1 with at least the surface reduced, and this metal ball 3 is attached to the bonding section. For example, an embodiment will be described in which ball bonding is performed on the bonding pad 4 of an IC.
すなわち、スプール(図示せず)に巻装された
Cuワイヤ1はクランパ5を介してキヤピラリ2
に挿通される。このキヤピラリ2には、このキヤ
ピラリ2内にCuワイヤ1が滞在している期間中
又は所定期間、Cuワイヤ1の少なくとも表面を
還元するように構成されている。例えばキヤピラ
リ2のCuワイヤ1の入口側には、還元ガス例え
ば高温に加熱された水素混合ガスをキヤピラリ1
内に導入するためのノズル6が結合され、このノ
ズル6の側壁には上記還元ガスを予め定めた流量
キヤピラリ1に導入する如く入口管7が結合され
ている。即ち、この入口管7から供給した還元ガ
スがノズル6を介してキヤピラリ2に導入し、キ
ヤピラリ2の先端から適宜導出される如く構成さ
れている。この導出されるガスは勢いよく下方に
流出されると、そのガスが金属球3を形成する後
述するシールド雰囲気13をこわす。従つてキヤ
ピラリ2の先端からガスが殆んど流出しない程度
の充満状態雰囲気となるように入口管2からの流
量を抑える必要がある。 i.e. wound on a spool (not shown)
Cu wire 1 is connected to capillary 2 via clamper 5.
is inserted into the This capillary 2 is configured to reduce at least the surface of the Cu wire 1 while the Cu wire 1 is staying in the capillary 2 or for a predetermined period. For example, on the inlet side of the Cu wire 1 of the capillary 2, a reducing gas such as a hydrogen mixed gas heated to a high temperature is applied to the capillary 1.
A nozzle 6 is connected to the side wall of the nozzle 6 to introduce the reducing gas into the capillary 1 at a predetermined flow rate. That is, the reducing gas supplied from the inlet pipe 7 is introduced into the capillary 2 through the nozzle 6, and is appropriately led out from the tip of the capillary 2. When the discharged gas flows downward forcefully, the gas destroys a shield atmosphere 13, which will be described later, in which the metal sphere 3 is formed. Therefore, it is necessary to suppress the flow rate from the inlet pipe 2 so that the atmosphere is so full that almost no gas flows out from the tip of the capillary 2.
上記水素混合ガスは例えば水素濃度10%を含む
アルゴン(Ar)混合ガスを温度例えば300℃に加
熱したガスを用いる。この高温ガスはキヤピラリ
2内で形成されればよく、例えば入口管7から常
温のガスを供給し、キヤピラリ2を加熱して、こ
のキヤピラリ2の温度によりキヤピラリ2内の還
元性ガスを高温にする方法でもよい。キヤピラリ
1に供給する還元性ガスはキヤピラリ1の先端か
ら流出してボール形成部およびボンデイング部に
空気が流入しないように還元性ガスの流量やキヤ
ピラリ2の先端構造を構成するとよい。さらにワ
イヤボンデイング時、キヤピラリ2内をCuワイ
ヤ1が出たり入つたりするが、そのCuワイヤの
進退運動により、キヤピラリ2先端の細い穴から
空気が入り込まないように還元ガスを供給する。
キヤピラリ2の先端から突出したCuワイヤ1の
先端近傍に金属球3を形成するための電気トーチ
のトーチ棒8が設置され、このトーチ棒8は周知
のように金属球3をCuワイヤ1の先端に形成す
る時、Cuワイヤ1の先端近傍に位置するように
予め記憶されたプログラムで操作される。この金
属球3を形成する雰囲気特にキヤピラリ下端から
Cuワイヤ1先端までの雰囲気を不活性ガス、還
元性ガス、の少なくとも一方の雰囲気にするよう
にノズル9が設けられる。この雰囲気は、完全に
シールドガスで大気と遮断されるが、空気を巻き
込むと球形の金属球3ができにくくなり、表面が
酸化され、接合性が著るしく低下する。シールド
ガスは勢いよく流出するとスパークさせても金属
球3が形成できなくなるため最適(流量)範囲が
ある。さらにボンデイングパツド4をボンデイン
グ時温度例えば150℃乃至350℃程度に保持する如
くヒータステージ10上にリードフレーム11に
固定されたIC12が設けられる。即ち、Cuワイ
ヤ1はキヤピラリ2内で少なくとも表面が還元さ
れて、活性な表面を有するCuワイヤがキヤピラ
リ1の先端を突出し、この位置でトーチ棒8が
Cuワイヤ1先端に誘導され、高圧パルスが印加
され、トーチ棒8とCuワイヤ1の先端との間で
放電し、金属球3が形成される。この雰囲気は上
記したようにノズル9からの不活性ガスの雰囲気
に保持され、良好な金属球3が形成され、この状
態でボンデイングパツド4上に金属球3がボンデ
イングされる。この金属球3は表面が酸化されて
ないので良好なボンデイングが安定して得られ
る。この金属球3のボンデイング後リードフーム
11の予め定められたボンデイング位置に2ndボ
ンデイングを実行する。この場合もキヤピラリ2
で還元されて活性化されたCuワイヤ1を用いて
不活性ガス雰囲気中でウエツジボンデイングする
ため、このボンデイングも良好なボンデイングが
安定して得られる。 As the hydrogen mixed gas, for example, a gas obtained by heating an argon (Ar) mixed gas containing 10% hydrogen concentration to a temperature of, for example, 300° C. is used. This high-temperature gas only needs to be formed within the capillary 2; for example, by supplying room-temperature gas from the inlet pipe 7 and heating the capillary 2, the temperature of the capillary 2 makes the reducing gas within the capillary 2 high-temperature. It may be a method. It is preferable to configure the flow rate of the reducing gas and the structure of the tip of the capillary 2 so that the reducing gas supplied to the capillary 1 flows out from the tip of the capillary 1 and air does not flow into the ball forming portion and the bonding portion. Furthermore, during wire bonding, the Cu wire 1 moves in and out of the capillary 2, and due to the forward and backward movement of the Cu wire, reducing gas is supplied to prevent air from entering through the thin hole at the tip of the capillary 2.
A torch rod 8 of an electric torch for forming a metal sphere 3 is installed near the tip of the Cu wire 1 protruding from the tip of the capillary 2, and as is well known, this torch rod 8 connects the metal ball 3 to the tip of the Cu wire 1. When forming the Cu wire 1, it is operated according to a pre-stored program so as to be located near the tip of the Cu wire 1. The atmosphere that forms this metal sphere 3, especially from the lower end of the capillary
A nozzle 9 is provided so that the atmosphere up to the tip of the Cu wire 1 is at least one of an inert gas and a reducing gas. This atmosphere is completely isolated from the atmosphere by the shielding gas, but if air is involved, it becomes difficult to form a spherical metal ball 3, the surface is oxidized, and the bondability is significantly reduced. If the shielding gas flows out forcefully, it will not be possible to form the metal sphere 3 even if it is sparked, so there is an optimum (flow rate) range. Further, an IC 12 fixed to a lead frame 11 is provided on the heater stage 10 so as to maintain the bonding pad 4 at a temperature of, for example, 150° C. to 350° C. during bonding. That is, at least the surface of the Cu wire 1 is reduced in the capillary 2, and the Cu wire with the active surface protrudes from the tip of the capillary 1, and the torch rod 8 is at this position.
A high voltage pulse is applied to the tip of the Cu wire 1, and a discharge occurs between the torch rod 8 and the tip of the Cu wire 1, forming a metal ball 3. This atmosphere is maintained as an inert gas atmosphere from the nozzle 9 as described above, and a good metal ball 3 is formed, and in this state, the metal ball 3 is bonded onto the bonding pad 4. Since the surface of the metal ball 3 is not oxidized, good bonding can be stably obtained. After bonding the metal ball 3, second bonding is performed at a predetermined bonding position on the lead frame 11. In this case as well, capillary 2
Since the wedge bonding is performed in an inert gas atmosphere using the Cu wire 1 which has been reduced and activated, good bonding can be stably obtained in this bonding as well.
上記実施例では非貴金属ワイヤの還元をボンデ
イングツールで行つた例について説明したが、ワ
イヤ走行路であれば、クランパを含む位置にも還
元雰囲気を形成しても同様な効果が得られる。又
ワイヤ先端にボールを形成しない非貴金属ワイヤ
のウエツジボンデイングについても良好な効果が
得られる。 In the above embodiment, an example was described in which the non-noble metal wire was reduced using a bonding tool, but the same effect can be obtained by forming a reducing atmosphere at a position including the clamper as long as the wire travels. Good effects can also be obtained in wedge bonding of non-noble metal wires without forming a ball at the tip of the wire.
さらに、上記実施例ではCuワイヤについて説
明したが、非貴金属ワイヤであればCuを含む合
金ワイヤ、Alワイヤ、Alを含む合金ワイヤなど
何れのワイヤボンデイングに適用してもよい。 Further, in the above embodiment, a Cu wire was described, but any non-noble metal wire such as an alloy wire containing Cu, an Al wire, an alloy wire containing Al, etc. may be applied to wire bonding.
以上説明したように本発明方法によれば非貴金
属ワイヤに還元作用を施した後金属球を形成する
ボンデイング方法を得ることができるので、良好
な金属球を形成することができると共に還元され
たワイヤ表面をボンデイングするので、安定して
強固なボールボンデイングウエツジボンデイング
を得ることができる。
As explained above, according to the method of the present invention, it is possible to obtain a bonding method in which a metal sphere is formed after applying a reducing action to a non-precious metal wire, so that a good metal sphere can be formed and the reduced wire Since the surface is bonded, stable and strong ball bonding and wedge bonding can be obtained.
第1図は本発明方法の実施例を説明するための
図、第2図は第1図のキヤピラリ部を拡大して示
めす説明図である。
1……非貴金属ワイヤ、2……キヤピラリ、3
……金属球、6,9……ノズル、7……入口管、
8……トーチ棒。
FIG. 1 is a diagram for explaining an embodiment of the method of the present invention, and FIG. 2 is an explanatory diagram showing an enlarged view of the capillary section in FIG. 1. 1... Non-precious metal wire, 2... Capillary, 3
...Metal ball, 6,9...Nozzle, 7...Inlet pipe,
8...Torch stick.
Claims (1)
デイングツール中に挿通させ、このボンデイング
ツールを通過したワイヤを被ボンデイング位置に
ボンデイングするに際し、上記非貴金属ワイヤに
還元作用を施した後ボンデイングすることを特徴
とする非貴金属ワイヤボンデイング方法。 2 上記非貴金属ワイヤに還元作用を施す手段
は、上記非貴金属ワイヤの走行路に形成される加
熱された還元性ガス雰囲気であることを特徴とす
る特許請求の範囲第1項記載の非貴金属ワイヤボ
ンデイング方法。 3 上記非貴金属ワイヤに還元作用を施す手段
は、上記ボンデイングツール内を上記非貴金属ワ
イヤが走行中に行うものであることを特徴とする
特許請求の範囲第1項記載の非貴金属ワイヤボン
デイング方法。[Scope of Claims] 1 A non-precious metal wire wound around a spool is passed through a bonding tool, and when the wire that has passed through the bonding tool is bonded to a bonding target position, a reducing action is applied to the non-precious metal wire. A non-precious metal wire bonding method characterized by post-bonding. 2. The non-noble metal wire according to claim 1, wherein the means for applying a reducing action to the non-noble metal wire is a heated reducing gas atmosphere formed in the running path of the non-noble metal wire. Bonding method. 3. The non-noble metal wire bonding method according to claim 1, wherein the means for applying the reducing action to the non-noble metal wire is carried out while the non-noble metal wire is running within the bonding tool.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59239487A JPS61119052A (en) | 1984-11-15 | 1984-11-15 | Nonnoble metal wire-bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59239487A JPS61119052A (en) | 1984-11-15 | 1984-11-15 | Nonnoble metal wire-bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61119052A JPS61119052A (en) | 1986-06-06 |
| JPH0530059B2 true JPH0530059B2 (en) | 1993-05-07 |
Family
ID=17045506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59239487A Granted JPS61119052A (en) | 1984-11-15 | 1984-11-15 | Nonnoble metal wire-bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61119052A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5152450A (en) * | 1987-01-26 | 1992-10-06 | Hitachi, Ltd. | Wire-bonding method, wire-bonding apparatus,and semiconductor device produced by the wire-bonding method |
-
1984
- 1984-11-15 JP JP59239487A patent/JPS61119052A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61119052A (en) | 1986-06-06 |
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