JPS63300522A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS63300522A
JPS63300522A JP62133505A JP13350587A JPS63300522A JP S63300522 A JPS63300522 A JP S63300522A JP 62133505 A JP62133505 A JP 62133505A JP 13350587 A JP13350587 A JP 13350587A JP S63300522 A JPS63300522 A JP S63300522A
Authority
JP
Japan
Prior art keywords
wire
pad
bonding
external electrode
plated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62133505A
Other languages
Japanese (ja)
Inventor
Nobuhito Yamazaki
山崎　信人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP62133505A priority Critical patent/JPS63300522A/en
Publication of JPS63300522A publication Critical patent/JPS63300522A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To perform an ultrasonic wire bonding even if a ball is not formed and to improve the quality of the bonding by connecting the pad of a pellet attached to a semiconductor substrate to an external electrode by a wire formed by Au-plating the surface of a fine wire made of Cu or the like. CONSTITUTION:A wire 6 connected from the pad 4 of a pellet 3 attached to a semiconductor substrate 2 to an external electrode 5 is formed by Au-plating at 8 the surface of a fine wire 7 made of Cu or Al. Since the wire 6 is formed by Au-plating at 8 the fine wire 7 made of the Cu or Al which is easily oxidized, the pad 4 can be connected to the electrode 5 by an ultrasonic wire bonding tool 9 without forming a ball. Since it is Au-plated, it is not oxidized, and it is not necessary to supply inert gas thereto. Further, since the surface of the wire 6 is plated with the Au, the Au can be preferably bonded to the pad 4 and the electrode 5, thereby improving the quality of its bonding.

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は半導体基板に取付けられたペレットのパッドと
外部電極との間をワイヤで接続してなる半導体装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device in which a pad of a pellet attached to a semiconductor substrate and an external electrode are connected by a wire.

［従来の技術］ 一般に、ペレットのパッド（第１ポンド点）と外部電極
（第２ポンド点）との間を接続するワイヤはＡｕよりな
るが、Ａｕは高価でコスト高になる。そこで最近、安価
なＣｕまたはＡｎワイヤが用いられている。[Prior Art] Generally, the wire connecting between the pad of the pellet (first pound point) and the external electrode (second pound point) is made of Au, but Au is expensive and costs high. Therefore, recently, inexpensive Cu or An wires have been used.

かかる半導体装置のワイヤ接続は、ワイヤポンディング
装置を用いて行われるが、ＣｕまたはＡ文ワイヤは、試
料（ポンド点）への着きが悪いの一〇 で、第１ポンド点へのポンディングは、ワイヤの先端に
ボールを形成して熱圧着ワイヤポンディング方法によっ
て行われる。しかしながら、ＣｕまたはＡｎワイヤは、
ボール形成時の加熱によってワイヤが酸化するので、例
えば特開昭５４−４０５７０号公報、特開昭５７−８９
２３２号公報に示すように、不活性ガス雰囲気でボール
を形成する必要がある。Wire connections for such semiconductor devices are performed using a wire bonding device, but Cu or A-pattern wires have a poor adhesion to the sample (pound point), and bonding to the first pound point is poor. This is done by forming a ball at the tip of the wire and using a thermocompression wire bonding method. However, Cu or An wire
Since the wire is oxidized by heating during ball formation, for example, JP-A-54-40570, JP-A-57-89,
As shown in Japanese Patent No. 232, it is necessary to form the ball in an inert gas atmosphere.

［発明が解決しようとする問題点］ 上記従来技術は、ワイヤがＣｕまたはＡｉよりなるので
、かかる半導体装置を製作するには、酸化防止用の不活
性ガスを必要とし、またこの不活性ガスを供給する機構
を必要とする。またボールを形成する必要があり、更に
第２ポンド点は着きが悪いＣｕまたはＡｉ自体をポンデ
ィングすることになり、ポンディング品質が悪い等の問
題があった。[Problems to be Solved by the Invention] In the above conventional technology, since the wire is made of Cu or Al, in order to manufacture such a semiconductor device, an inert gas for preventing oxidation is required. Requires a feeding mechanism. In addition, it is necessary to form a ball, and at the second pound point, Cu or Al itself, which has poor adhesion, must be pounded, resulting in problems such as poor bonding quality.

本発明の目的は、上記従来技術の問題点を解消した半導
体装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device that solves the problems of the prior art described above.

［問題点を解決するための手段］ 一 上記従来技術の問題点は、半導体基板に取付けられたペ
レットのパッドと外部電極との間をＣｕ等の細線の表面
にＡｕメッキしたワイヤで接続することにより解決され
る。[Means for Solving the Problems] One problem with the above-mentioned conventional technology is that the pad of the pellet attached to the semiconductor substrate and the external electrode are connected by a wire plated with Au on the surface of a thin wire made of Cu or the like. It is solved by

［作用コ ワイヤは、Ｃｕ等よりなる細線の表面にＡｕメッキされ
ているので、ポールを形成しなくても超音波ワイヤポン
ディング方法でポンディングできる。また不活性ガスを
必要としなく、更に不活性ガス供給機構を有しなくとも
製作できる。またワイヤ表面がＡｕのため、ポンド点へ
の着きが良く、ポンディング品質が向上する。[Since the surface of the working cowire is a fine wire made of Cu or the like and plated with Au, it can be bonded by the ultrasonic wire bonding method without forming a pole. Further, it does not require an inert gas and can be manufactured without having an inert gas supply mechanism. Furthermore, since the wire surface is made of Au, it can easily reach the pounding point, improving the bonding quality.

［実施例］ 以下、本発明の一実施例を図により説明する。[Example] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

半導体装置ｌは、半導体基板２に取付けられたペレット
３のパッド４と外部電極５との間に、ワイヤ６が接続さ
れている。ワイヤ６はＣｕまたはＡ文よりなる細線７の
表面にＡｕメッキ８が施されている。なお、９はポンデ
ィング用ツールを示す。In the semiconductor device 1, a wire 6 is connected between a pad 4 of a pellet 3 attached to a semiconductor substrate 2 and an external electrode 5. The wire 6 has a thin wire 7 made of Cu or A pattern, and the surface thereof is plated with Au 8. Note that 9 indicates a bonding tool.

このように、ワイヤ６は酸化し易いＣｕまたはＡｎの細
線７にＡｕメッキ８が施されているので、ポールを形成
しないで超音波ワイヤポンディング方法でパッド４及び
外部電極５に接続できる。またＡｕメッキ８されている
ので、酸化しなく、不活性ガスの供給も必要としない、
更にワイヤ６の表面はＡｕであるので、パッド４及び外
部電極５への着きが良く、ポンディング品質が向上する
。In this way, since the wire 6 is a fine wire 7 made of Cu or An that is easily oxidized and is plated with Au 8, it can be connected to the pad 4 and the external electrode 5 by the ultrasonic wire bonding method without forming a pole. In addition, since it is Au plated, it does not oxidize and does not require the supply of inert gas.
Furthermore, since the surface of the wire 6 is made of Au, it adheres well to the pad 4 and external electrode 5, improving the bonding quality.

［発明の効果］ 本発明によれば、ポールを形成しないので、ポール形成
用の放電装置、不活性ガスの供給及び不活性ガス供給機
構を必要としなくてポンディングができる。またワイヤ
表面がＡｕであるので、ポンド点への着きが良い。[Effects of the Invention] According to the present invention, since no poles are formed, pounding can be performed without requiring a discharge device for pole formation, an inert gas supply, and an inert gas supply mechanism. Also, since the wire surface is made of Au, it can easily reach the pound point.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明の一実施例を示す説明図である。 １：半導体装置、　　２：半導体基板、　　３：ペレッ
ト、　４：パッド、　５：外部電極、　　６：ワイヤ、
　　７：細線、　８：Ａｕメッキ。The figure is an explanatory diagram showing one embodiment of the present invention. 1: Semiconductor device, 2: Semiconductor substrate, 3: Pellet, 4: Pad, 5: External electrode, 6: Wire,
7: Thin wire, 8: Au plating.

Claims (1)

【特許請求の範囲】[Claims] 半導体基板に取付けられたペレットのパッドと外部電極
との間をＣｕ等の細線の表面にＡｕメッキしたワイヤで
接続してなる半導体装置。A semiconductor device in which a pellet pad attached to a semiconductor substrate and an external electrode are connected by a thin wire made of Cu or the like whose surface is plated with Au.
JP62133505A 1987-05-30 1987-05-30 Semiconductor device Pending JPS63300522A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62133505A JPS63300522A (en) 1987-05-30 1987-05-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62133505A JPS63300522A (en) 1987-05-30 1987-05-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS63300522A true JPS63300522A (en) 1988-12-07

Family

ID=15106339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62133505A Pending JPS63300522A (en) 1987-05-30 1987-05-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS63300522A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7709938B2 (en) 2005-06-22 2010-05-04 Infineon Technologies Ag Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same
JP2018067680A (en) * 2016-10-21 2018-04-26 国立研究開発法人産業技術総合研究所 Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7709938B2 (en) 2005-06-22 2010-05-04 Infineon Technologies Ag Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same
US8030744B2 (en) 2005-06-22 2011-10-04 Infineon Technologies Ag Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same
DE102005028951B4 (en) 2005-06-22 2018-05-30 Infineon Technologies Ag Arrangement for the electrical connection of a semiconductor circuit arrangement with an external contact device
JP2018067680A (en) * 2016-10-21 2018-04-26 国立研究開発法人産業技術総合研究所 Semiconductor device

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