JPH05301733A - Silica glass and its production - Google Patents
Silica glass and its productionInfo
- Publication number
- JPH05301733A JPH05301733A JP10955992A JP10955992A JPH05301733A JP H05301733 A JPH05301733 A JP H05301733A JP 10955992 A JP10955992 A JP 10955992A JP 10955992 A JP10955992 A JP 10955992A JP H05301733 A JPH05301733 A JP H05301733A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- silica
- heat treatment
- silica glass
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/01446—Thermal after-treatment of preforms, e.g. dehydrating, consolidating, sintering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/08—Doped silica-based glasses containing boron or halide
- C03C2201/11—Doped silica-based glasses containing boron or halide containing chlorine
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
- C03C2201/23—Doped silica-based glasses containing non-metals other than boron or halide containing hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2203/00—Production processes
- C03C2203/40—Gas-phase processes
- C03C2203/42—Gas-phase processes using silicon halides as starting materials
- C03C2203/44—Gas-phase processes using silicon halides as starting materials chlorine containing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2203/00—Production processes
- C03C2203/50—After-treatment
- C03C2203/52—Heat-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Glass Melting And Manufacturing (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
- Glass Compositions (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、シリカガラス及びその
製造方法に関するものであり、詳しくは、高純度で、耐
熱性が高く、高温における紫外線吸収がないシリカガラ
ス及びシリカ微粒子からなる多孔質体について前処理加
熱を行なった後に、チッ素化合物を含むガス雰囲気中で
熱処理して無水(脱OH)化し、次いで酸化処理した後
に、ガラス化するシリカガラスの製造方法に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to silica glass and a method for producing the same, and more specifically, it is a porous body composed of silica glass and silica fine particles having high purity, high heat resistance and no UV absorption at high temperature. The present invention relates to a method for producing silica glass, which comprises performing pretreatment heating, heat treatment in a gas atmosphere containing a nitrogen compound to dehydrate (deOH), and then subjecting to oxidation treatment, followed by vitrification.
【0002】[0002]
【従来の技術】近年、シリカガラスに対する物性向上の
要求がますます高まっている。シリカガラスの用途は多
岐にわたるが、中でも半導体製造に使用される治工具類
向けや液晶ディスプレー基板用とした場合、純度及び耐
熱性の向上が強く要求されている。2. Description of the Related Art In recent years, demands for improving the physical properties of silica glass have been increasing. Silica glass has a wide variety of applications, and in particular, when it is used for jigs and tools used in semiconductor manufacturing and for liquid crystal display substrates, improvement in purity and heat resistance is strongly required.
【0003】従来、半導体製造用治工具類や液晶ディス
プレー用基板等のような耐熱性を要求される用途には、
天然に産出する水晶を2000℃を越える温度で溶融し
て得られるガラス(溶融シリカガラス)が使用されてい
た。Conventionally, for applications requiring heat resistance such as semiconductor manufacturing jigs and tools and substrates for liquid crystal displays,
A glass (fused silica glass) obtained by melting a naturally occurring crystal at a temperature exceeding 2000 ° C. has been used.
【0004】しかしながら、この溶融シリカガラスは天
然水晶を原料としているために、少量の金属不純物の存
在は不可避であった。そのため、これまで溶融シリカガ
ラスの多くの部分が半導体製造用治工具用として使用さ
れてきたが、ここ数年、半導体の集積度が飛躍的に向上
し、それに伴い治工具からの僅かな汚染が問題となって
きた。また、液晶ディスプレー基板においても従来は溶
融シリカガラスが使用されてきたが、近年のカラー化及
び高画質化に伴って半導体素子が組込まれるようにな
り、素子の誤動作防止のために使用するガラスの純度向
上が強く望まれるようになった。その結果、これらの分
野において使用きれるシリカガラスは、溶融シリカガラ
スから高純度な合成シリカガラスヘの転換が行われつつ
ある。However, since this fused silica glass is made from natural quartz, the presence of a small amount of metallic impurities is unavoidable. For this reason, most of fused silica glass has been used for semiconductor manufacturing jigs and tools, but in recent years, the degree of integration of semiconductors has improved dramatically, with the result that slight contamination from jigs and tools has occurred. Has become a problem. Further, although fused silica glass has been conventionally used for liquid crystal display substrates, semiconductor elements have come to be incorporated with the recent trend of colorization and higher image quality. There has been a strong demand for improved purity. As a result, silica glass that can be used in these fields is being converted from fused silica glass to high-purity synthetic silica glass.
【0005】高純度な合成シリカガラスを得るための従
来の方法としては、1)四塩化ケイ素等の合成された高
純度原料を酸水素炎中で加水分解し、これを2000℃
前後の高温に加熱し、堆積・ガラス化する直接法、2)
四塩化ケイ素等の高純度合成原料を加水分解してガラス
微粒子を発生,堆積させて一旦シリカ多孔質体とし、こ
の多孔質体を焼結によりシリカガラスとする気相法があ
げられる。As a conventional method for obtaining a high-purity synthetic silica glass, 1) a synthesized high-purity raw material such as silicon tetrachloride is hydrolyzed in an oxyhydrogen flame, and this is heated at 2000 ° C.
Direct method of heating to high temperature around and depositing and vitrifying 2)
There is a vapor phase method in which a high-purity synthetic raw material such as silicon tetrachloride is hydrolyzed to generate and deposit glass fine particles into a silica porous material, and the porous material is sintered to form silica glass.
【0006】これらの製造方法によって得られるシリカ
ガラスは高純度であり、金属不純物はppb又はppt
のレベルで実質上ないに等しい。The silica glass obtained by these manufacturing methods has a high purity and metal impurities are ppb or ppt.
At virtually no level.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、シリカ
ガラスを半導体製造用治工具類や液晶ディスプレー基板
等に使用する場合には高純度とともに耐熱性も要求され
ているが、合成法によるシリカガラスは耐熱性に問題が
ある。However, when silica glass is used in jigs and tools for semiconductor manufacturing, liquid crystal display substrates, etc., high purity and heat resistance are required. There is a problem with sex.
【0008】すなわち、直接法により製造されたシリカ
ガラス中にはOH基が1000ppm前後必ず含まれ
る。シリカガラス中にOH基が含まれていると、ガラス
の耐熱性は悪くなる。直接法によって製造されたシリカ
ガラス中に含まれるOH基は、後処理によってガラス中
から取り除くことは非常に困難である。That is, the silica glass produced by the direct method always contains about 1000 ppm of OH groups. If the silica glass contains OH groups, the heat resistance of the glass will deteriorate. The OH groups contained in the silica glass produced by the direct method are very difficult to remove from the glass by post-treatment.
【0009】また、気相法により製造されたシリカ多孔
質体をガラス化したシリカガラスにも基本的にはOH基
が含まれる。このシリカ多孔質体は、その後焼結により
ガラス化される。従って、気相法によるシリカガラスの
場合でも、ガラス微粒子を加水分解によって発生させて
いるため、シリカ多孔質体をそのまま何の処理もせずに
焼結、ガラス化すると、焼結条件により多少異なるが、
得られるシリカガラスには通常数10〜数100ppm
のOH基が含まれる。このため耐熱性は、直接法による
シリカガラスほどではないが溶融シリカガラスに比ベて
劣り、用途によっては十分ではない。The silica glass obtained by vitrifying the porous silica material produced by the vapor phase method also basically contains OH groups. This silica porous body is then vitrified by sintering. Therefore, even in the case of silica glass by the vapor phase method, since the glass fine particles are generated by hydrolysis, if the silica porous body is directly sintered and vitrified without any treatment, it will be slightly different depending on the sintering conditions. ,
The silica glass obtained usually has several tens to several hundreds of ppm.
OH groups are included. For this reason, the heat resistance is inferior to that of fused silica glass by the direct method, but inferior to that of fused silica glass, and is not sufficient for some applications.
【0010】なお、気相法が直接法と異なる点は、直接
法が原料を加水分解後直ちにガラス化してしまうのに対
し、気相法は一旦多孔質体の状態を経ることができるの
で、この多孔質体の状態で脱水処理やドープ処理等の様
々な処理をすることが可能となる。例えば、耐熱性を損
うOH基をガラス中から除去したい場合には、シリカ多
孔質体の状態で脱水処理を行なう。脱水処理とは、シリ
カ多孔質体を塩素ガスのようなハロゲン元素を含むガス
雰囲気中で1000℃前後で加熱する処理である。脱水
処理を施すことによりシリカ多孔質体にはOH基が存在
しなくなり、その後焼結して得られるガラスにもOH基
は含まれない。The difference between the vapor phase method and the direct method is that the direct method vitrifies the raw material immediately after hydrolysis, whereas the vapor phase method can go through a state of a porous body once. Various treatments such as dehydration treatment and dope treatment can be performed in the state of the porous body. For example, when it is desired to remove OH groups that impair heat resistance from the glass, dehydration treatment is performed in the state of the porous silica material. The dehydration treatment is a treatment in which the porous silica material is heated at about 1000 ° C. in a gas atmosphere containing a halogen element such as chlorine gas. By the dehydration treatment, the silica porous body has no OH group, and the glass obtained by subsequent sintering does not contain any OH group.
【0011】しかしながら、脱水処理を施して得られた
ガラスには、脱水処理の際に使用したハロゲン元素が通
常数100〜数1000ppm含まれている。気相法は
そもそも光ファイバーを製造する目的で開発された方法
で、伝送損失を大きくするOH基の存在は嫌うが、塩素
やフッ素のようなハロゲン元素は損失の原因とはならな
いために、その存在はこれまでのところ大きな問題とは
ならなかった。これに対し、シリカガラスを半導体製造
用治工具類や液晶ディスプレー基板に用いる場合、ハロ
ゲン元素の存在は共にガラスの耐熱性を損うために好ま
しいものではない。さらに、シリカガラス中に存在する
ハロゲン元素の場合、高温にさらされた際にハロゲンガ
スとなってガラスから雰囲気中に放出されるため、この
ガスにより周辺装置等が腐食されるという問題もあっ
た。However, the glass obtained by the dehydration treatment usually contains several hundred to several thousand ppm of the halogen element used in the dehydration treatment. The vapor phase method was originally developed for the purpose of manufacturing optical fibers, and we hate the existence of OH groups that increase transmission loss, but halogen elements such as chlorine and fluorine do not cause loss, so their existence Hasn't been a big issue so far. On the other hand, when silica glass is used for jigs and tools for semiconductor manufacturing and liquid crystal display substrates, the presence of halogen elements impairs the heat resistance of the glass, which is not preferable. Further, in the case of a halogen element present in silica glass, when exposed to a high temperature, it becomes a halogen gas and is released from the glass into the atmosphere, so that there is a problem that peripheral devices are corroded by this gas. ..
【0012】従って、半導体製造用治工具類や液晶ディ
スプレー基板に使用するシリカガラスを製造する場合に
は、脱水処理に使用するガスとしてハロゲン元素を含ま
ないものを使用する必要がある。このようなガスとして
チッ素化合物ガス、中でも経済性,入手や取扱いの容易
さからアンモニアガスが知られている。アンモニアの場
合も塩素等のハロゲン元素含有ガスと同様に、シリカ多
孔質母材をアンモニアガス雰囲気中にて加熱処理する。
アンモニアで脱水処理した後にガラス化すれば、OH基
もハロゲン元素も含まれないシリカガラスを得ることが
できる。この場合、ガラス中には窒素が取り込まれる。
シリカガラス中の窒素がガラスの耐熱性に与える影響
は、OH基やハロゲン元素とは異なり、ガラスの耐熱性
を向上させるという良い結果をもたらす。実際、アンモ
ニアガスによって脱水処理を施した後にガラス化して得
られたシリカガラスは、耐熱性(その目安としての高温
における粘性)の著しい向上が観察された。Therefore, when manufacturing silica glass used for semiconductor manufacturing jigs and liquid crystal display substrates, it is necessary to use a gas containing no halogen element as the gas used for the dehydration treatment. As such a gas, a nitrogen compound gas, in particular, ammonia gas is known because of its economical efficiency, availability and handling. In the case of ammonia, as in the case of a halogen-containing gas such as chlorine, the silica porous base material is heat-treated in an ammonia gas atmosphere.
Silica glass containing neither OH group nor halogen element can be obtained by vitrification after dehydration treatment with ammonia. In this case, nitrogen is taken into the glass.
The effect of nitrogen in silica glass on the heat resistance of the glass brings about a good result that the heat resistance of the glass is improved unlike the OH group and the halogen element. In fact, the silica glass obtained by vitrification after dehydration treatment with ammonia gas was observed to have a marked improvement in heat resistance (viscosity at high temperature as a guideline).
【0013】しかしながら、アンモニアガスによって脱
水処理を施した後にガラス化して得られたシリカガラス
は、紫外線の透過率を調べると240nm付近に吸収が
発生している。この吸収は、半導体製造プロセス中のリ
ソグラフィー工程において焦点ずれ等の点で悪影響を与
える可能性のあるものである。However, in the silica glass obtained by vitrification after subjecting to dehydration treatment with ammonia gas, when ultraviolet transmittance is examined, absorption occurs near 240 nm. This absorption may have an adverse effect on defocus etc. in the lithography step in the semiconductor manufacturing process.
【0014】さらに、気相法によるシリカ多孔質体は、
原料を火炎加水分解することによって生じたガラス微粒
子を堆積させて得るものであるが、このガラス微粒子
は、反応場である火炎が温度分布をもつため、火炎中に
おける反応した場所によって生成時の熱履歴が異なる。
従って、ガラス微粒子の堆積体であるシリカ多孔質体は
その部位、例えば中心と外側では、微粒子の熱履歴の違
いに起因して物性が異なる。このシリカ多孔質体を何の
処理もせずに脱水処理(塩素等のハロゲン元素含有ガ
ス,アンモニアガス等)をしてガラスを得た場合、この
物性の違いがそのまま得られるガラスに引継がれる。そ
の一つである高温における粘性については、ガラスの中
心部と外側とでは同一温度における粘度が異なるという
ことになり、これはそのガラスを加工する際に、パイプ
やファイバー状に引いた場合に径が安定しない等の点で
大きな問題となる。Further, the silica porous material obtained by the vapor phase method is
It is obtained by depositing glass particles generated by flame hydrolysis of the raw material.The glass particles have a temperature distribution in the flame, which is the reaction field, so the heat generated during the generation depends on the reaction location in the flame. History is different.
Therefore, the silica porous body, which is a deposited body of glass fine particles, has different physical properties at its site, for example, at the center and outside, due to the difference in thermal history of the fine particles. When glass is obtained by subjecting this porous silica material to a dehydration treatment (a gas containing a halogen element such as chlorine, ammonia gas, etc.) without any treatment, this difference in physical properties is inherited by the obtained glass. Regarding the viscosity at high temperature, which is one of them, it means that the viscosity at the same temperature is different between the center part of the glass and the outside, which means that when the glass is processed, the diameter when drawn into a pipe or fiber shape. Is not stable and becomes a big problem.
【0015】本発明は、以上の問題点に鑑みてなされた
ものであり、その目的は、金属不純物はもちろん、OH
基もハロゲン元素も含まず高純度で、かつ耐熱性が高
く、同一ガラス塊においては物性が異ならず均質で、高
温における紫外線吸収がないシリカガラス及びその製造
方法を提供することにある。The present invention has been made in view of the above problems, and its purpose is not only metal impurities but also OH.
It is an object of the present invention to provide a silica glass that does not contain a group or a halogen element, has high purity and high heat resistance, is homogeneous in the same glass lump without different physical properties, and does not absorb ultraviolet light at high temperature, and a method for producing the same.
【0016】[0016]
【課題を解決するための手段】本発明者らは、上記した
課題を解決するために鋭意検討した結果、高純度で耐熱
性が高く、均質で、紫外線の吸収もないシリカガラス
は、金属不純物元素の他に、従来ではあまり間題とされ
なかったOH基やハロゲン元素も存在しないガラスであ
り、このようなシリカガラスを得るためには、シリカ微
粒子からなる多孔質体を乾燥雰囲気中にて加熱処理後、
脱水剤としてチッ素化合物ガスを使用して脱水処理を行
ない、次いで酸素ガス雰囲気中で加熱処理した後にガラ
ス化すればよいことを見出し、本発明を完成するに至っ
たものである。Means for Solving the Problems As a result of intensive studies for solving the above-mentioned problems, the present inventors have found that silica glass having high purity, high heat resistance, homogeneity and no absorption of ultraviolet rays is a metal impurity. In addition to elements, it is a glass that does not have OH groups and halogen elements, which have not been a problem in the past, and in order to obtain such silica glass, a porous body composed of silica fine particles is dried in a dry atmosphere. After heat treatment,
The inventors have found that it is sufficient to perform a dehydration treatment using a nitrogen compound gas as a dehydrating agent, then heat-treat it in an oxygen gas atmosphere, and then vitrify it, thereby completing the present invention.
【0017】すなわち、本発明は、ガラス中に含まれる
OH基濃度が10ppm以下、ハロゲン元素濃度が50
ppm以下、全ての金属不純物元素が各々10ppb以
下であり、かつ、1200℃における粘度がlogη=
11.80(Pa・sec)以上であるシリカガラス及
びその製造方法である。That is, according to the present invention, the concentration of OH groups contained in the glass is 10 ppm or less and the concentration of halogen elements is 50.
ppm or less, all metal impurity elements are 10 ppb or less, and the viscosity at 1200 ° C. is logη =
A silica glass of 11.80 (Pa · sec) or more and a method for producing the same.
【0018】以下、本発明についてさらに詳細に説明す
る。The present invention will be described in more detail below.
【0019】本発明におけるシリカガラスは、ガラス中
に含まれるOH基濃度が10ppm以下であり、ハロゲ
ン元素濃度が50ppm以下である。OH基濃度が10
ppm以下、ハロゲン元素濃度が50ppm以下である
と、耐熱性が高くなるが、さらに、耐熱性向上のために
OH基濃度が1ppm以下が好ましい。The silica glass in the present invention has an OH group concentration of 10 ppm or less and a halogen element concentration of 50 ppm or less contained in the glass. OH group concentration is 10
When the concentration of the halogen element is 50 ppm or less and the halogen element concentration is 50 ppm or less, the heat resistance is high, and further, in order to improve the heat resistance, the OH group concentration is preferably 1 ppm or less.
【0020】本発明におけるシリカガラスは、全ての金
属不純物元素が各々10ppb以下である。従って、金
属不純物が少なく、高純度である。In the silica glass of the present invention, all metal impurity elements are 10 ppb or less. Therefore, the amount of metal impurities is small and the purity is high.
【0021】本発明におけるシリカガラスは、1200
℃における粘度がlogη=11.80(Pa・se
c)以上である。ここに、ガラスにおける耐熱性を表示
するものとして、ガラスの粘度を測定する方法があり、
これは、1200℃におけるガラスの粘度をビームベン
ディング法等により測定するものである。従来の溶融シ
リカガラスでは、1200℃における粘度がlogη=
約11.70(Pa・sec)である。従って、本発明
のシリカガラスは従来の溶融シリカガラスより耐熱性が
高いものである。The silica glass in the present invention is 1200
The viscosity at ° C is log η = 11.80 (Pa · se
c) or more. Here, as an indication of the heat resistance of the glass, there is a method of measuring the viscosity of the glass,
This is to measure the viscosity of glass at 1200 ° C. by a beam bending method or the like. In the conventional fused silica glass, the viscosity at 1200 ° C. is logη =
It is about 11.70 (Pa · sec). Therefore, the silica glass of the present invention has higher heat resistance than the conventional fused silica glass.
【0022】また、本発明における製造方法は、気相法
等により得られたシリカ多孔質体を、第一の熱処理とし
て乾燥雰囲気にて熱処理を行ない、次いで、第二の熱処
理としてチッ素化合物を含むガス雰囲気中にて脱水処理
を行ない、さらに、第三の熱処理として酸素を含むガス
雰囲気中にて加熱処理を行ない、その後にガラス化する
ものである。In the production method of the present invention, the silica porous material obtained by the vapor phase method or the like is heat-treated in a dry atmosphere as a first heat treatment, and then a nitrogen compound is used as a second heat treatment. The dehydration treatment is performed in a gas atmosphere containing oxygen, and the third heat treatment is heat treatment in a gas atmosphere containing oxygen, followed by vitrification.
【0023】シリカ多孔質体を得るための方法は特に限
定するものではないが、例えば、四塩化ケイ素等の原料
を火炎加水分解してガラス微粒子を発生させ、このガラ
ス微粒子を堆積させてシリカ多孔質体を得る気相法があ
げられ、これには、例えば、外付けCVD法、内付けC
VD法、気相軸付け法(VAD法)等がある。The method for obtaining the silica porous material is not particularly limited, but for example, raw materials such as silicon tetrachloride are subjected to flame hydrolysis to generate glass fine particles, and the glass fine particles are deposited to form the silica porous material. A vapor phase method for obtaining a substance is given, for example, an external CVD method, an internal C method.
There are a VD method, a vapor phase axis attaching method (VAD method) and the like.
【0024】第一の熱処理は、雰囲気としては水分を含
まない雰囲気であれば酸化性、還元性、不活性又は真空
等いずれの雰囲気でも限定するものではないが、Si−
HやSi−Oラジカル等の生成を避けるため、酸化性又
は不活性雰囲気であることが好ましい。第一の熱処理
は、得られるシリカガラスの均質性を向上させるための
予備焼結的なものであり、温度としては600〜140
0℃で行なうことが必要である。温度が600℃未満で
あると、予備焼結の効果が得られず、また、1400℃
を超えると焼結が進行し、多孔質体の孔が閉じてしまい
これ以降の処理が不可能となる。なお、ガラス微粒子同
士の焼結がある程度進行し、しかし多孔質状態を保った
ままであるため1000〜1З50℃の範囲で行なうこ
とがより好ましい。また、第一の熱処理温度は、第二、
第三の熱処理温度より高くても差し支えない。処理時間
はシリカ多孔質母材の径によって異なるものであるが、
例えば、直径500mm以下の場合には、効果・生産性
を考え合わせると1〜8時間とするのが好ましい。The first heat treatment is not limited to any atmosphere such as an oxidizing atmosphere, a reducing atmosphere, an inert atmosphere or a vacuum atmosphere as long as the atmosphere does not contain water.
In order to avoid generation of H, Si—O radicals, etc., an oxidizing or inert atmosphere is preferable. The first heat treatment is pre-sintering for improving the homogeneity of the obtained silica glass, and the temperature is 600 to 140.
It is necessary to carry out at 0 ° C. If the temperature is lower than 600 ° C, the effect of pre-sintering cannot be obtained, and 1400 ° C
If it exceeds, the sintering will proceed and the pores of the porous body will be closed, making it impossible to perform the subsequent treatment. It should be noted that the sintering of the glass particles progresses to some extent, but the porous state is still maintained, so that it is more preferable to perform the sintering in the range of 1000 to 1 ° C and 50 ° C. The first heat treatment temperature is the second,
It may be higher than the third heat treatment temperature. The treatment time varies depending on the diameter of the silica porous matrix,
For example, when the diameter is 500 mm or less, it is preferably 1 to 8 hours in consideration of effects and productivity.
【0025】第二の熱処理は、チッ素化合物ガスによる
脱水工程であり、チッ素化合物ガスを含む雰囲気であれ
ば100%チッ素化合物ガス又は希釈したチッ素化合物
ガスいずれの雰囲気でも特に限定するものではない。な
お、チッ素化合物ガスを希釈する場合、その希釈ガスは
チッ素化合物ガスの脱水作用を妨げないガスであれば特
に限定するものではなく、例えば、N2 やHe等の不活
性ガス等があげられる。また、希釈の割合は特に限定す
るものではないが、脱水反応が十分に進行するチッ素化
合物ガス1vol.%以上であることが好ましい。温度
としては、600℃未満では脱水反応が十分に進行せ
ず、得られるガラスにOH基が10ppm以上残存し、
また、1400℃を超える温度ではシリカ多孔質母材が
多孔質状態から閉孔状態へと焼結が進行してしまい得ら
れるガラスには泡が残存してしまうため、脱水反応が十
分に進行し、かつ、多孔質状態を保ったままとなる60
0〜1400℃で行なう必要がある。処理時間はシリカ
多孔質母材の径によって異なるものであるが、例えば、
直径500mm以下の場合、効果・生産性を考え合わせ
ると1〜10時間とするのが好ましい。The second heat treatment is a dehydration step using a nitrogen compound gas, and if the atmosphere contains the nitrogen compound gas, the atmosphere is either 100% nitrogen compound gas or diluted nitrogen compound gas atmosphere. is not. When diluting the nitrogen compound gas, the diluent gas is not particularly limited as long as it does not interfere with the dehydration action of the nitrogen compound gas, and examples thereof include an inert gas such as N 2 or He. Be done. Moreover, the dilution ratio is not particularly limited, but the nitrogen compound gas 1 vol. % Or more is preferable. If the temperature is lower than 600 ° C., the dehydration reaction does not proceed sufficiently, and OH groups remain 10 ppm or more in the obtained glass.
Further, at a temperature higher than 1400 ° C., the silica porous matrix undergoes sintering from a porous state to a closed state, and bubbles remain in the resulting glass, so that the dehydration reaction proceeds sufficiently. And, it remains porous 60
It is necessary to carry out at 0 to 1400 ° C. The treatment time depends on the diameter of the silica porous matrix, but for example,
When the diameter is 500 mm or less, it is preferably 1 to 10 hours in consideration of effects and productivity.
【0026】第三の熱処理は、酸化工程であるので酸素
を含む雰囲気であれば100%酸素又は希釈した酸素い
ずれの雰囲気でも特に限定するものではない。酸素を希
釈する場合、その希釈ガスは酸素の酸化作用を妨げない
ガスであれば特に限定するものではなく、例えば、N2
やHe等の不活性ガス等があげられる。また、希釈する
場合の割合は特に限定するものではないが、酸化反応が
十分に進行する酸素1vol.%以上であることが好ま
しい。温度としては、酸化反応が十分に進行し、かつ、
シリカ多孔質母材が多孔質状態を保ったままである60
0〜1400℃の範囲内において行なう必要がある。温
度が600℃未満であると、酸化反応が十分に進行せ
ず、また、1400℃を超えると焼結が進行し、多孔質
体の孔が閉じてしまいこれ以降の処理が不可能となる。
なお、第三の熱処理温度は、第二の熱処理で生じるおそ
れがある欠陥を補うために、第二の熱処理における処理
温度以上で行なうことが好ましい。処理時間はシリカ多
孔質母材の径によって異なるものであるが、例えば、直
径500mm以下の場合、効果・生産性を考え合わせる
と1〜10時間とするのが好ましい。Since the third heat treatment is an oxidation step, it is not particularly limited to an atmosphere containing 100% oxygen or diluted oxygen as long as it is an atmosphere containing oxygen. When diluting oxygen, the diluting gas is not particularly limited as long as it does not interfere with the oxidizing action of oxygen. For example, N 2
And an inert gas such as He. In addition, the ratio in the case of diluting is not particularly limited, but oxygen 1 vol. % Or more is preferable. As for the temperature, the oxidation reaction proceeds sufficiently, and
Silica porous matrix remains porous 60
It needs to be performed within the range of 0 to 1400 ° C. If the temperature is lower than 600 ° C., the oxidation reaction does not proceed sufficiently, and if it exceeds 1400 ° C., the sintering proceeds and the pores of the porous body are closed, so that the treatment thereafter cannot be performed.
Note that the third heat treatment temperature is preferably higher than or equal to the treatment temperature in the second heat treatment in order to compensate for defects that may occur in the second heat treatment. The treatment time varies depending on the diameter of the porous silica base material. For example, when the diameter is 500 mm or less, it is preferably 1 to 10 hours in consideration of effects and productivity.
【0027】以上の方法により処理の終了したシリカ多
孔質母材を焼結して透明,ガラス化すればシリカガラス
を得ることができ、このガラス化は通常使用されている
方法を用いればよい。Silica glass can be obtained by sintering and vitrifying the silica porous base material which has been treated by the above method, and the vitrification may be carried out by a commonly used method.
【0028】[0028]
【実施例】本発明を以下の実施例によりさらに詳しく説
明するが、本発明はこれらの実施例に限定されるもので
はない。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
【0029】実施例1 四塩化ケイ素を酸水素炎バーナーで火炎加水分解してガ
ラス微粒子を発生させ、これをターゲット上に軸方向に
堆積させて約400mm×1000mmのシリカ多孔質
母材を得た。このシリカ多孔質母材を均等加熱方式の電
気炉に備えられた炉芯管に挿入し、100%N2 雰囲気
中、温度1000℃で2時間第一の熱処理を行なった。
次いで、10vol.%NH3 −90vol.%N2 雰
囲気中、温度600℃で2時間第二の熱処理(脱水処
理)を行なった。第二の熱処理後炉芯管内をN2 ガスに
てパージした後、5vol.%O2 −95vol.%N
2 雰囲気中、温度1000℃で2時間第三の熱処理を行
なった。Example 1 Silicon tetrachloride was subjected to flame hydrolysis with an oxyhydrogen flame burner to generate glass fine particles, which were axially deposited on a target to obtain a porous silica preform of about 400 mm × 1000 mm. .. This silica porous base material was inserted into a furnace core tube provided in a uniform heating type electric furnace, and a first heat treatment was performed at a temperature of 1000 ° C. for 2 hours in a 100% N 2 atmosphere.
Then, 10 vol. % NH 3 -90vol. A second heat treatment (dehydration treatment) was performed at a temperature of 600 ° C. for 2 hours in a% N 2 atmosphere. After the second heat treatment, after purging the inside of the furnace core tube with N 2 gas, 5 vol. % O 2 -95 vol. % N
A third heat treatment was performed in a 2 atmosphere at a temperature of 1000 ° C. for 2 hours.
【0030】処理終了後、シリカ多孔質母材をゾーン加
熱方式の電気炉に備えられた炉芯管に挿入し、100%
He雰囲気にて1500℃の加熱ゾーンに徐々に引き下
ろしていき、下端より透明ガラス化してシリカガラスを
得た。得られたガラスの一部を切断し、ガラス中に含ま
れるOH基、Cl、全金属元素の定量分析を行なったと
ころ、それぞれ7ppm、50ppm未満、10ppb
未満であった。After completion of the treatment, the silica porous base material was inserted into a furnace core tube provided in an electric furnace of zone heating system, and 100%
It was gradually pulled down to a heating zone at 1500 ° C. in a He atmosphere, and was transparentized from the lower end to obtain silica glass. A part of the obtained glass was cut, and quantitative analysis of OH groups, Cl, and all metal elements contained in the glass was carried out. The results were 7 ppm, less than 50 ppm, and 10 ppb, respectively.
Was less than.
【0031】紫外線の透過率を測ったところ、特異な吸
収は観察されず、図1に示すように良好な透過性を示し
た。さらに、高温粘性測定のための試験片を中心から外
側に向って10点切り出し、それぞれの1200℃にお
けるガラスの粘度をビームベンディング法により測定し
たところ、logη=12.07±0.01(Pa・s
ec)であった。When the transmittance of ultraviolet rays was measured, no peculiar absorption was observed and good transmittance was exhibited as shown in FIG. Further, a test piece for high temperature viscosity measurement was cut out from the center at 10 points, and the viscosity of each glass at 1200 ° C. was measured by a beam bending method. Log η = 12.07 ± 0.01 (Pa · s
ec).
【0032】比較例1 実施例1と同様の方法により、ほぼ同サイズのシリカ多
孔質母材を得た。このシリカ多孔質母材を均等加熱方式
の電気炉に備えられた炉芯管に挿入し、100%N2 雰
囲気中、温度1000℃で2時間第一の熱処理を行なっ
た。続いて10vol.%NH3 −90vol.%N2
雰囲気中、温度500℃で2時間第二の熱処理(脱水処
理)を行なった。第二の熱処理後炉芯管内をN2 ガスに
てパージした後、5vol.%O2 −95vol.%N
2 雰囲気中、温度1000℃で2時間第三の熱処理を行
なった。Comparative Example 1 By the same method as in Example 1, a silica porous matrix having substantially the same size was obtained. This silica porous base material was inserted into a furnace core tube provided in a uniform heating type electric furnace, and a first heat treatment was performed at a temperature of 1000 ° C. for 2 hours in a 100% N 2 atmosphere. Then 10 vol. % NH 3 -90vol. % N 2
A second heat treatment (dehydration treatment) was performed at a temperature of 500 ° C. for 2 hours in the atmosphere. After the second heat treatment, after purging the inside of the furnace core tube with N 2 gas, 5 vol. % O 2 -95 vol. % N
A third heat treatment was performed in a 2 atmosphere at a temperature of 1000 ° C. for 2 hours.
【0033】処理終了後、シリカ多孔質母材をゾーン加
熱方式の電気炉に備えられた炉芯管に挿入し、100%
He雰囲気にて1500℃の加熱ゾーンに徐々に引き下
ろしていき、下端より透明ガラス化してシリカガラスを
得た。得られたガラスの一部を切断し、ガラス中に含ま
れるOH基、Cl、全金属元素の定量分析を行なったと
ころ、それぞれ20ppm、50ppm未満、10pp
b未満であった。After the completion of the treatment, the silica porous base material was inserted into a furnace core tube provided in an electric furnace of zone heating system, and 100% was added.
It was gradually pulled down to a heating zone at 1500 ° C. in a He atmosphere, and was transparentized from the lower end to obtain silica glass. A part of the obtained glass was cut, and quantitative analysis of OH groups, Cl, and total metal elements contained in the glass was carried out. The results were 20 ppm, less than 50 ppm, and 10 pp, respectively.
It was less than b.
【0034】紫外線の透過率を測ったところ、特異な吸
収は観察されず、図1に示すように良好な透過性を示し
た。さらに、高温粘性測定のための試験片を中心から外
側に向って10点切り出し、それぞれの1200℃にお
けるガラスの粘度をビームベンディング法により測定し
たところ、logη=11.65±0.01(Pa・s
ec)であった。When the transmittance of ultraviolet rays was measured, no peculiar absorption was observed and good transmittance was exhibited as shown in FIG. Further, a test piece for high temperature viscosity measurement was cut out from the center at 10 points, and the viscosity of each glass at 1200 ° C. was measured by a beam bending method. Log η = 11.65 ± 0.01 (Pa · s
ec).
【0035】比較例2 実施例1と同様の方法により、ほぼ同サイズのシリカ多
孔質母材を得た。このシリカ多孔質母材を均等加熱方式
の電気炉に備えられた炉芯管に挿入し、100%N2 雰
囲気中、温度1000℃で2時間第一の熱処理を行なっ
た。続いて10vol.%NH3 −90vol.%N2
雰囲気中、温度600℃で2時間第二の熱処理(脱水処
理)を行なった。処理終了後、第三の熱処理を行なわ
ず、シリカ多孔質母材をゾーン加熱方式の電気炉に備え
られた炉芯管に挿入し、100%He雰囲気にて150
0℃の加熱ゾーンに徐々に引き下ろしていき、下端より
透明ガラス化してシリカガラスを得た。得られたガラス
の一部を切断し、ガラス中に含まれるOH基、Cl、全
金属元素の定量分析を行なったところ、それぞれ7pp
m、50ppm未満、10ppb未満であった。Comparative Example 2 By the same method as in Example 1, a silica porous matrix having substantially the same size was obtained. This silica porous base material was inserted into a furnace core tube provided in a uniform heating type electric furnace, and a first heat treatment was performed at a temperature of 1000 ° C. for 2 hours in a 100% N 2 atmosphere. Then 10 vol. % NH 3 -90vol. % N 2
A second heat treatment (dehydration treatment) was performed at a temperature of 600 ° C. for 2 hours in the atmosphere. After completion of the treatment, the third porous heat treatment was not performed, and the porous silica preform was inserted into the furnace core tube provided in the electric furnace of the zone heating system, and the silica was heated in the 100% He atmosphere at 150%.
Gradually pulled down to a heating zone of 0 ° C., and transparentized glass was obtained from the lower end to obtain silica glass. A part of the obtained glass was cut, and quantitative analysis of OH groups, Cl, and all metal elements contained in the glass was carried out.
m, less than 50 ppm, less than 10 ppb.
【0036】紫外線の透過率を測ったところ、図2に示
すように波長240nm付近に酸素欠陥が原因と推測さ
れる吸収が観察された。さらに、高温粘性測定のための
試験片を中心から外側に向って10点切り出し、それぞ
れの1200℃におけるガラスの粘度をビームベンディ
ング法により測定したところ、logη=12.09±
0.03(Pa・sec)であった。When the transmittance of ultraviolet rays was measured, as shown in FIG. 2, absorption estimated to be caused by oxygen defects was observed near a wavelength of 240 nm. Further, a test piece for high temperature viscosity measurement was cut out from the center at 10 points, and the viscosity of each glass at 1200 ° C. was measured by a beam bending method. Log η = 12.09 ±
It was 0.03 (Pa · sec).
【0037】実施例2実施例1と同様の方法により、ほ
ぼ同サイズのシリカ多孔質母材を得た。この シリカ多孔質母材を均等加熱方式の電気炉に備えられた
炉芯管に挿入し、100%N2 雰囲気中、温度1000
℃で2時間第一の熱処理を行なった。続いて10vο
l.%NH3 −90vol.%N2 雰囲気中、温度70
0℃で2時間第二の熱処理(脱水処理)を行なった。第
二の熱処理後炉芯管内をN2 ガスにてパージした後、5
vol.%O2 −95vol.%N2 雰囲気中、温度1
000℃で2時間第三の熱処理を行なった。Example 2 By the same method as in Example 1, a silica porous matrix having substantially the same size was obtained. This silica porous base material was inserted into a furnace core tube provided in an electric furnace of uniform heating system, and the temperature was set to 1000 in a 100% N 2 atmosphere.
The first heat treatment was carried out at 0 ° C. for 2 hours. Then 10vο
l. % NH 3 -90vol. % N 2 atmosphere, temperature 70
A second heat treatment (dehydration treatment) was performed at 0 ° C. for 2 hours. After the second heat treatment, after purging the inside of the furnace core tube with N 2 gas, 5
vol. % O 2 -95 vol. % N 2 atmosphere, temperature 1
A third heat treatment was performed at 000 ° C for 2 hours.
【0038】処理終了後、シリカ多孔質母材をゾーン加
熱方式の電気炉に備えられた炉芯管に挿入し、100%
He雰囲気にて1530℃の加熱ゾーンに徐々に引き下
ろしていき、下端より透明ガラス化してシリカガラスを
得た。得られたガラスの一部を切断し、ガラス中に含ま
れるOH基、Cl、全金属元素の定量分析を行なったと
ころ、それぞれ1ppm未満、50ppm未満、10p
pb未満であった。After the completion of the treatment, the silica porous base material was inserted into a furnace core tube provided in a zone heating type electric furnace, and 100% was added.
It was gradually pulled down to a heating zone at 1530 ° C. in a He atmosphere, and transparent glass was formed from the lower end to obtain silica glass. Part of the obtained glass was cut, and quantitative analysis of OH groups, Cl, and all metal elements contained in the glass was performed.
It was less than pb.
【0039】紫外線の透過率を測ったところ、特異な吸
収は観察されず、実施例1と同様であった。さらに、高
温粘性測定のための試験片を中心から外側に向って10
点切り出し、それぞれの1200℃におけるガラスの粘
度をビームベンディング法により測定したところ、lo
gη=12.35±0.01(Pa・sec)であっ
た。When the transmittance of ultraviolet rays was measured, no specific absorption was observed and it was the same as in Example 1. Further, the test piece for high temperature viscosity measurement is moved from the center to the outside by 10
The points were cut out, and the viscosity of each glass at 1200 ° C. was measured by the beam bending method.
It was gη = 12.35 ± 0.01 (Pa · sec).
【0040】比較例3 実施例1と同様の方法により、ほぼ同サイズのシリカ多
孔質母材を得た。このシリカ多孔質母材を均等加熱方式
の電気炉に備えられた炉芯管に挿入し、第一の熱処理は
行なわずに、10vol.%NH3 −90vol.%N
2 雰囲気中、温度700℃で2時間第二の熱処理(脱水
処理)を行なった。第二の熱処理後、第三の熱処理は行
なわずに、シリカ多孔質母材をゾーン加熱方式の電気炉
に備えられた炉芯管に挿入し、100%He雰囲気にて
1530℃の加熱ゾーンに徐々に引き下ろしていき、下
端より透明ガラス化してシリカガラスを得た。得られた
ガラスの一部を切断し、ガラス中に含まれるOH基、C
l、全金属元素の定量分析を行なったところ、それぞれ
1ppm未満、50ppm未満、10ppb未満であっ
た。Comparative Example 3 By the same method as in Example 1, a silica porous matrix having substantially the same size was obtained. This silica porous base material was inserted into a furnace core tube provided in an electric furnace of uniform heating system, and 10 vol. % NH 3 -90vol. % N
A second heat treatment (dehydration treatment) was performed at a temperature of 700 ° C. for 2 hours in two atmospheres. After the second heat treatment, without performing the third heat treatment, the silica porous base material was inserted into a furnace core tube provided in an electric furnace of a zone heating system, and was heated in a heating zone at 1530 ° C. in a 100% He atmosphere. The silica glass was obtained by gradually pulling it down and turning it into a transparent glass from the lower end. A part of the obtained glass is cut, and OH groups and C contained in the glass are cut.
Quantitative analysis of 1 and all metal elements revealed that they were less than 1 ppm, less than 50 ppm and less than 10 ppb, respectively.
【0041】紫外線の透過率を測ったところ、比較例1
と同様に、波長240nm付近に酸素欠陥が原因と推測
される吸収が観察された。さらに、高温粘性測定のため
の試験片を中心から外側に向って10点切り出し、それ
ぞれの1200℃におけるガラスの粘度をビームベンデ
ィング法により測定したところ、logη=12.43
±0.04(Pa・sec)であった。When the transmittance of ultraviolet rays was measured, Comparative Example 1
In the same manner as above, absorption supposed to be caused by oxygen defects was observed near the wavelength of 240 nm. Further, a test piece for high temperature viscosity measurement was cut out from the center at 10 points, and the viscosity of each glass at 1200 ° C. was measured by a beam bending method. Log η = 12.43
It was ± 0.04 (Pa · sec).
【0042】比較例4 実施例1と同様の方法により、ほぼ同サイズのシリカ多
孔質母材を得た。このシリカ多孔質母材を均等加熱方式
の電気炉に備えられた炉芯管に挿入し、第一の熱処理は
行なわずに、10vol.%Cl2 −90vol.%N
2 雰囲気中、温度800℃で2時間第二の熱処理(脱水
処理)を行なった。第二の熱処理後、第三の熱処理は行
なわずに、シリカ多孔質母材をゾーン加熱方式の電気炉
に備えられた炉芯管に挿入し、100%He雰囲気にて
1500℃の加熱ゾーンに徐々に引き下ろしていき、下
端より透明ガラス化してシリカガラスを得た。得られた
ガラスの一部を切断し、ガラス中に含まれるOH基、C
l、全金属元素の定量分析を行なったところ、それぞれ
1ppm未満、1500ppm、10ppb未満であっ
た。Comparative Example 4 By the same method as in Example 1, a silica porous matrix having substantially the same size was obtained. This silica porous base material was inserted into a furnace core tube provided in an electric furnace of uniform heating system, and 10 vol. % Cl 2 -90 vol. % N
A second heat treatment (dehydration treatment) was performed at a temperature of 800 ° C. for 2 hours in two atmospheres. After the second heat treatment, without performing the third heat treatment, the porous silica preform was inserted into a furnace core tube provided in an electric furnace of a zone heating system, and heated in a heating zone at 1500 ° C. in a 100% He atmosphere. The silica glass was obtained by gradually pulling it down and turning it into a transparent glass from the lower end. A part of the obtained glass is cut, and OH groups and C contained in the glass are cut.
Quantitative analysis of 1 and all metal elements showed less than 1 ppm, 1500 ppm and less than 10 ppb, respectively.
【0043】紫外線の透過率を測ったところ、比較例1
と同様に、波長240nm付近に酸素欠陥が原因と推測
される吸収が観察された。さらに、高温粘性測定のため
の試験片を中心から外側に向って10点切り出し、それ
ぞれの1200℃におけるガラスの粘度をビームベンデ
ィング法により測定したところ、logη=11.28
±0.04(Pa・sec)であった。When the transmittance of ultraviolet rays was measured, Comparative Example 1
In the same manner as above, absorption supposed to be caused by oxygen defects was observed near the wavelength of 240 nm. Further, a test piece for high temperature viscosity measurement was cut out from the center at 10 points, and the viscosity of each glass at 1200 ° C. was measured by a beam bending method. Log η = 11.28
It was ± 0.04 (Pa · sec).
【0044】実施例3 実施例1と同様の方法により、ほぼ同サイズのシリカ多
孔質母材を得た。このシリカ多孔質母材を均等加熱方式
の電気炉に備えられた炉芯管に挿入し、100%N2 雰
囲気中、温度1000℃で2時間第一の熱処理を行なっ
た。続いて10vol.%NH3 −90vol.%N2
雰囲気中、温度1000℃で2時間第二の熱処理(脱水
処理)を行なった。第二の熱処理後炉芯管内をN2 ガス
にてパージした後、5vol.%O2 −95vol.%
N2 雰囲気中、温度1000℃で2時間第三の熱処理を
行なった。Example 3 By the same method as in Example 1, a silica porous matrix having substantially the same size was obtained. This silica porous base material was inserted into a furnace core tube provided in a uniform heating type electric furnace, and a first heat treatment was performed at a temperature of 1000 ° C. for 2 hours in a 100% N 2 atmosphere. Then 10 vol. % NH 3 -90vol. % N 2
A second heat treatment (dehydration treatment) was performed at a temperature of 1000 ° C. for 2 hours in the atmosphere. After the second heat treatment, after purging the inside of the furnace core tube with N 2 gas, 5 vol. % O 2 -95 vol. %
A third heat treatment was performed at a temperature of 1000 ° C. for 2 hours in an N 2 atmosphere.
【0045】処理終了後、シリカ多孔質母材をゾーン加
熱方式の電気炉に備えられた炉芯管に挿入し、100%
He雰囲気にて1550℃の加熱ゾーンに徐々に引き下
ろしていき、下端より透明ガラス化してシリカガラスを
得た。得られたガラスの一部を切断し、ガラス中に含ま
れるOH基、Cl、全金属元素の定量分析を行なったと
ころ、それぞれ1ppm未満、50ppm未満、10p
pb未満であった。After completion of the treatment, the silica porous base material was inserted into a furnace core tube provided in an electric furnace of zone heating system, and 100% was added.
Gradually pulling it down to a heating zone of 1550 ° C. in He atmosphere, and transparent glass was obtained from the lower end to obtain silica glass. Part of the obtained glass was cut, and quantitative analysis of OH groups, Cl, and all metal elements contained in the glass was performed.
It was less than pb.
【0046】紫外線の透過率を測ったところ、特異な吸
収は観察されず、実施例1と同様であった。さらに、高
温粘性測定のための試験片を中心から外側に向って10
点切り出し、それぞれの1200℃におけるガラスの粘
度をビームベンディング法により測定したところ、lo
gη=12.43±0.01(Pa・sec)であっ
た。When the transmittance of ultraviolet rays was measured, no specific absorption was observed and it was the same as in Example 1. Further, the test piece for high temperature viscosity measurement is moved from the center to the outside by 10
The points were cut out, and the viscosity of each glass at 1200 ° C. was measured by the beam bending method.
It was gη = 12.43 ± 0.01 (Pa · sec).
【0047】実施例4 実施例1と同様の方法により、ほぼ同サイズのシリカ多
孔質母材を得た。このシリカ多孔質母材を均等加熱方式
の電気炉に備えられた炉芯管に挿入し、100%N2 雰
囲気中、温度1300℃で4時間第一の熱処理を行なっ
た。続いて10vol.%NH3 −90vol.%N2
雰囲気中、温度1000℃で2時間第二の熱処理(脱水
処理)を行なった。第二の熱処理後炉芯管内をN2 ガス
にてパージした後、5vol.%O2 −95vol.%
N2 雰囲気中、温度1000℃で2時間第三の熱処理を
行なった。Example 4 By the same method as in Example 1, a silica porous matrix having substantially the same size was obtained. This silica porous base material was inserted into a furnace core tube provided in an electric furnace of uniform heating system, and first heat treatment was carried out at a temperature of 1300 ° C. for 4 hours in a 100% N 2 atmosphere. Then 10 vol. % NH 3 -90vol. % N 2
A second heat treatment (dehydration treatment) was performed at a temperature of 1000 ° C. for 2 hours in the atmosphere. After the second heat treatment, after purging the inside of the furnace core tube with N 2 gas, 5 vol. % O 2 -95 vol. %
A third heat treatment was performed at a temperature of 1000 ° C. for 2 hours in an N 2 atmosphere.
【0048】処理終了後、シリカ多孔質母材をゾーン加
熱方式の電気炉に備えられた炉芯管に挿入し、100%
He雰囲気にて1550℃の加熱ゾーンに徐々に引き下
ろしていき、下端より透明ガラス化してシリカガラスを
得た。得られたガラスの一部を切断し、ガラス中に含ま
れるOH基、Cl、全金属元素の定量分析を行なったと
ころ、それぞれ1ppm未満、50ppm未満、10p
pb未満であった。After completion of the treatment, the silica porous base material was inserted into a furnace core tube provided in a zone heating type electric furnace, and 100% was added.
Gradually pulling it down to a heating zone of 1550 ° C. in He atmosphere, and transparent glass was obtained from the lower end to obtain silica glass. Part of the obtained glass was cut, and quantitative analysis of OH groups, Cl, and all metal elements contained in the glass was performed.
It was less than pb.
【0049】紫外線の透過率を測ったところ、特異な吸
収は観察されず、実施例1と同様であった。さらに、高
温粘性測定のための試験片を中心から外側に向って10
点切り出し、それぞれの1200℃におけるガラスの粘
度をビームベンディング法により測定したところ、lo
gη=12.40±0.01(Pa・sec)であっ
た。When the transmittance of ultraviolet rays was measured, no specific absorption was observed and it was the same as in Example 1. Further, the test piece for high temperature viscosity measurement is moved from the center to the outside by 10
The points were cut out, and the viscosity of each glass at 1200 ° C. was measured by the beam bending method.
gη = 12.40 ± 0.01 (Pa · sec).
【0050】比較例5 実施例1と同様の方法により、ほぼ同サイズのシリカ多
孔質母材を得た。このシリカ多孔質母材を均等加熱方式
の電気炉に備えられた炉芯管に挿入し、100%N2 雰
囲気中、温度1000℃で2時間第一の熱処理を行なっ
た。次いで10vol.%Cl2 ・90vol.%N2
雰囲気中、温度800℃で2時間第二の熱処理(脱水処
理)を行なった。処理終了後、第三の熱処理を行なわ
ず、シリカ多孔質母材をゾーン加熱方式の電気炉に備え
られた炉芯管に挿入し、100%He雰囲気にて150
0℃の加熱ゾーンに徐々に引き下ろしていき、下端より
透明ガラス化してシリカガラスを得た。得られたガラス
の一部を切断し、ガラス中に含まれるOH基、Cl、全
金属元素の定量分析を行なったところ、それぞれ1pp
m未満、500ppm未満、10ppb未満であった。Comparative Example 5 By the same method as in Example 1, a silica porous base material having substantially the same size was obtained. This silica porous base material was inserted into a furnace core tube provided in a uniform heating type electric furnace, and a first heat treatment was performed at a temperature of 1000 ° C. for 2 hours in a 100% N 2 atmosphere. Then 10 vol. % Cl 2 · 90 vol. % N 2
A second heat treatment (dehydration treatment) was performed at a temperature of 800 ° C. for 2 hours in the atmosphere. After completion of the treatment, the third porous heat treatment was not performed, and the porous silica preform was inserted into the furnace core tube provided in the electric furnace of the zone heating system, and the silica was heated in the 100% He atmosphere at 150%.
Gradually pulled down to a heating zone of 0 ° C., and transparentized glass was obtained from the lower end to obtain silica glass. A part of the obtained glass was cut, and quantitative analysis of OH groups, Cl, and all metal elements contained in the glass was carried out.
It was less than m, less than 500 ppm, and less than 10 ppb.
【0051】紫外線の透過率を測ったところ、比較例1
と同様に波長240nm付近に酸素欠陥が原因と推測さ
れる吸収が観察された。さらに、高温粘性測定のための
試験片を中心から外側に向って10点切り出し、それぞ
れの1200℃におけるガラスの粘度をビームベンディ
ング法により測定したところ、logη=11.46±
0.02(Pa・sec)であった。When the transmittance of ultraviolet rays was measured, Comparative Example 1
Similarly to the above, absorption presumed to be caused by oxygen defects was observed near the wavelength of 240 nm. Further, a test piece for high temperature viscosity measurement was cut out from the center at 10 points, and the viscosity of each glass at 1200 ° C. was measured by a beam bending method, and log η = 11.46 ±
It was 0.02 (Pa · sec).
【0052】[0052]
【発明の効果】以上の説明から明らかなように、本発明
によれぱ、高純度で、耐熱性が高く、均質で、高温にお
ける紫外線吸収がないシリカガラスを得ることができる
効果を有するものである。このため、このシリカガラス
は、高純度と高耐熱性を兼ね備えていなければならない
半導体製造用治工具や液晶ディスプレー基板等の素材と
して好適に用いられる。As is apparent from the above description, according to the present invention, it is possible to obtain a silica glass having high purity, high heat resistance, homogeneity, and no ultraviolet absorption at high temperature. is there. Therefore, this silica glass is preferably used as a material for semiconductor manufacturing jigs and tools, liquid crystal display substrates, and the like, which must have both high purity and high heat resistance.
【図面の簡単な説明】[Brief description of drawings]
【図1】紫外線の透過率を示す図である。FIG. 1 is a diagram showing the transmittance of ultraviolet rays.
【図2】紫外線の透過率を示す図である。FIG. 2 is a diagram showing the transmittance of ultraviolet rays.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成4年5月21日[Submission date] May 21, 1992
【手続補正1】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0001[Correction target item name] 0001
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【0001】[0001]
【産業上の利用分野】本発明は、シリカガラス及びその
製造方法に関するものであり、詳しくは、高純度で、耐
熱性が高く、紫外線吸収がないシリカガラス及びシリカ
微粒子からなる多孔質体について前処理加熱を行なった
後に、チッ素化合物を含むガス雰囲気中で熱処理して無
水(脱OH)化し、次いで酸化処理した後に、ガラス化
するシリカガラスの製造方法に関するものである。BACKGROUND OF THE INVENTION This invention relates to silica glass and a manufacturing method thereof, particularly, high purity, high heat resistance, the porous body consisting of ultraviolet absorbing no silica glass and silica particles The present invention relates to a method for producing silica glass, which comprises performing pretreatment heating, heat treatment in a gas atmosphere containing a nitrogen compound to dehydrate (deOH), then oxidizing treatment, and then vitrifying.
【手続補正2】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0015[Correction target item name] 0015
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【0015】本発明は、以上の問題点に鑑みてなされた
ものであり、その目的は、金属不純物はもちろん、OH
基もハロゲン元素も含まず高純度で、かつ耐熱性が高
く、同一ガラス塊においては物性が異ならず均質で、紫
外線吸収がないシリカガラス及びその製造方法を提供す
ることにある。The present invention has been made in view of the above problems, and its purpose is not only metal impurities but also OH.
It is to provide a silica glass which does not contain a group or a halogen element, has high purity and high heat resistance, is homogeneous in the same glass lump without different physical properties , and has no ultraviolet ray absorption, and a method for producing the same. ..
【手続補正3】[Procedure 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0052[Correction target item name] 0052
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【0052】[0052]
【発明の効果】以上の説明から明らかなように、本発明
によれぱ、高純度で、耐熱性が高く、均質で、紫外線吸
収がないシリカガラスを得ることができる効果を有する
ものである。このため、このシリカガラスは、高純度と
高耐熱性を兼ね備えていなければならない半導体製造用
治工具や液晶ディスプレー基板等の素材として好適に用
いられる。As apparent from the above description, by the present invention Repa, high purity, high heat resistance, homogeneous and has an advantage of being able to obtain the ultraviolet absorption is not silica glass .. Therefore, this silica glass is preferably used as a material for semiconductor manufacturing jigs and tools, liquid crystal display substrates, and the like, which must have both high purity and high heat resistance.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 多賀 俊幸 山口県防府市大字大崎276番地の1264 (72)発明者 津久間 孝次 茨城県土浦市富士崎1丁目18番7号 (72)発明者 秋山 智幸 茨城県土浦市富士崎1丁目18番7号 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Toshiyuki Taga 1264 276 Osaki, Hofu, Yamaguchi Prefecture (72) Inventor Koji Tsukuma 1-18-7 Fujisaki, Tsuchiura City, Ibaraki (72) Inventor Tomoyuki Akiyama 1-18-7 Fujisaki, Tsuchiura City, Ibaraki Prefecture
Claims (2)
pm以下、ハロゲン元素濃度が50ppm以下、全ての
金属不純物元素が各々10ppb以下であり、かつ、1
200℃における粘度がlogη=11.80(Pa・
sec)以上であることを特徴とするシリカガラス。1. The concentration of OH groups contained in glass is 10 p.
pm or less, halogen element concentration is 50 ppm or less, all metal impurity elements are 10 ppb or less, and 1
The viscosity at 200 ° C. is log η = 11.80 (Pa ·
sec) or more, which is a silica glass.
中、600〜1400℃の温度で第一の熱処理を行な
い、次いで、チッ素化合物を含むガス雰囲気中、600
〜1400℃の温度で第二の熱処理を行ない、さらに、
酸素を含むガス雰囲気中、600〜1400℃の温度で
第三の熱処理を行なった後にガラス化することを特徴と
する請求項1に記載のシリカガラスの製造方法。2. A porous silica material is subjected to a first heat treatment at a temperature of 600 to 1400 ° C. in an atmosphere containing no water, and then 600 in a gas atmosphere containing a nitrogen compound.
Perform a second heat treatment at a temperature of ~ 1400 ° C, and
The method for producing silica glass according to claim 1, wherein vitrification is performed after the third heat treatment is performed at a temperature of 600 to 1400 ° C. in a gas atmosphere containing oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10955992A JPH05301733A (en) | 1992-04-28 | 1992-04-28 | Silica glass and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10955992A JPH05301733A (en) | 1992-04-28 | 1992-04-28 | Silica glass and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05301733A true JPH05301733A (en) | 1993-11-16 |
Family
ID=14513309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10955992A Pending JPH05301733A (en) | 1992-04-28 | 1992-04-28 | Silica glass and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05301733A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5949945A (en) * | 1996-02-27 | 1999-09-07 | Hitachi Cable, Ltd. | Optical waveguide, optical module and optical system using the same |
| JP2008280247A (en) * | 2002-07-31 | 2008-11-20 | Shinetsu Quartz Prod Co Ltd | Synthetic quartz glass body |
-
1992
- 1992-04-28 JP JP10955992A patent/JPH05301733A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5949945A (en) * | 1996-02-27 | 1999-09-07 | Hitachi Cable, Ltd. | Optical waveguide, optical module and optical system using the same |
| JP2008280247A (en) * | 2002-07-31 | 2008-11-20 | Shinetsu Quartz Prod Co Ltd | Synthetic quartz glass body |
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