JPH05308090A - Tab type semiconductor device - Google Patents

Abstract

PURPOSE:To enable an inner lead to be connected to the substrate for a semiconductor device without necessitating bump forming and without causing the inner lead to touch the subtrate by forming a projection in the section of the semiconductor substrate to which the inner lead is connected so as to protrude from the surface of the substrate. CONSTITUTION:A substrate 2 of a semiconductor device is fabricated so that projection 5a is formed in advance in the section of substrate to which lead-out electrode 3 is connected. Further, this projection 5a can be obtained by selectively etching the surface of the semiconductor substrate 2 before fabricating an integrated circuit on the surface of the semiconductor substrate 2. An inner lead 1 is then connected to the electrode 3 drawn out onto the thus formed projection 5a. Since the peripheral section of this lead-out electrode 3 is lower than the connecting section, the inner lead 1 does not touch the semiconductor substrate 2. Furthermore, when forming the projection 5b, the semiconductor substrate 2 may be formed by selectively growing it in advance. In this case, since the projection does not generate undercut in the periphery thereof, the projection is superior in strength to the others.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to TAB (Tape A
The present invention relates to an automated bonding type semiconductor device.

[0002]

2. Description of the Related Art FIG. 2 is a sectional view showing a chip in an example of a conventional TAB semiconductor device. As shown in FIG. 2, a conventional TAB type semiconductor device has a semiconductor substrate 2 on which an integrated circuit is formed on one surface and bumps 4 are formed on lead electrodes 3 which are input / output terminals of the integrated circuit, and the bumps 4. Had an inner lead 1 connected to.

The bump 4 connects the inner lead 1 and the extraction electrode 3, but is formed in a convex shape so as not to contact the inner lead 1 and the semiconductor substrate 2.
The material of the bumps 4 is gold, platinum, titanium, or gold or aluminum.

Further, as a method of forming the bump 4, a method of directly forming the bump 4 on the semiconductor substrate 2 by thermocompression bonding or soldering,
There is a method of forming bumps 4 on the inner lead 1 side using a permanent substrate such as a transfer bump method.

[0005]

In this conventional TAB type semiconductor device, since the technique for forming these bumps is complicated, even today, many improvements are required in terms of manufacturing quality control and shortening of the construction period. I was trying.

An object of the present invention is to provide a TAB type semiconductor device capable of connecting an inner lead and an extraction electrode without forming a bump which causes various problems in manufacturing technology.

[0007]

A TAB type semiconductor device of the present invention is a TAB type semiconductor device in which an inner lead and a lead electrode on a semiconductor substrate are connected to each other, in a portion of the semiconductor substrate corresponding to the inner lead. It is characterized in that a protrusion is formed.

[0008]

The present invention will be described below with reference to the drawings.

1A and 1B are sectional views showing a chip in an embodiment of a TAB type semiconductor device of the present invention. In this TAB type semiconductor device, as shown in FIG. 1A, a protruding portion 5a formed in advance is provided in a portion to which the extraction electrode 3 is connected. Other than that is the same as the conventional example. In addition, the protruding portion 5a is selectively formed on the surface of the semiconductor substrate 2 before forming an integrated circuit.
It is obtained by etching the surface of.

By forming the protrusion 5a in this manner, the inner lead 1 is attached to the lead electrode 3 on the protrusion 5a.
To connect. Since the circumference of the upstanding electrode 3 is lower than this connecting portion, the inner lead 1 does not contact the semiconductor substrate 2.

Further, as shown in FIG. 1B, the protrusion 5
When forming b, the semiconductor substrate 2 may be selectively grown in advance and formed. In this case, undercut does not occur around the protrusion, which is advantageous in strength.

[0012]

As described above, according to the present invention, by providing the projecting portion projecting from the surface on the portion of the semiconductor substrate connected to the inner lead, it is not necessary to form bumps, and the inner lead contacts the semiconductor substrate. There is an effect that you can connect without doing.

[Brief description of drawings]

FIG. 1 is a sectional view showing a chip in an embodiment of a TAB type semiconductor device of the present invention.

FIG. 2 is a cross-sectional view showing a chip in an example of a conventional TAB type semiconductor device.

[Explanation of symbols]

 1 inner lead 2 semiconductor substrate 3 extraction electrode 4 bumps 5a, 5b protrusion

Claims (1)

[Claims] 1. A TAB type semiconductor device in which an inner lead is connected to a lead-out electrode on a semiconductor substrate, wherein a TAB is formed at a portion of the semiconductor substrate corresponding to the inner lead. Type semiconductor device.