JPH053103A - Thermistor porcelain - Google Patents

Thermistor porcelain

Info

Publication number
JPH053103A
JPH053103A JP3154429A JP15442991A JPH053103A JP H053103 A JPH053103 A JP H053103A JP 3154429 A JP3154429 A JP 3154429A JP 15442991 A JP15442991 A JP 15442991A JP H053103 A JPH053103 A JP H053103A
Authority
JP
Japan
Prior art keywords
glass
added
mol
thermistor
thermistor porcelain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3154429A
Other languages
Japanese (ja)
Inventor
Masayuki Takahashi
雅幸 高橋
Takuoki Hata
拓興 畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3154429A priority Critical patent/JPH053103A/en
Publication of JPH053103A publication Critical patent/JPH053103A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】 【目的】 回路の温度補償用、温度センサに使用される
Cuを添加した3d遷移金属の酸化物を主成分とするサ
ーミスタ磁器において、150℃などの高温長時間放置
下での電気抵抗,B定数等の電気特性の変動を解決し、
高安定なサーミスタ磁器を提供することを目的とする。 【構成】 Cuを添加している3d遷移金属酸化物を主
成分とする酸化物に、V2O5を30〜95モル%、また
はMoO3を55〜80モル%、またはWO3を30〜8
0モル%含有するガラス粉末を、酸化物に対し0.1〜
10.0重量%添加することにより、結晶中の酸素や吸
着した水分の粒界拡散が阻止されるため、高温で長時間
放置しても特性の変化が小さい安定なサーミスタ磁器を
得ることができる。
(57) [Abstract] [Purpose] In a thermistor porcelain mainly composed of Cu-added 3d transition metal oxide used for temperature compensation of circuits and temperature sensors, it is left at high temperature such as 150 ℃ for a long time. To solve the fluctuations in electrical characteristics such as
An object is to provide a highly stable thermistor porcelain. [Structure] In an oxide containing 3d transition metal oxide as a main component to which Cu is added, V 2 O 5 is 30 to 95 mol%, MoO 3 is 55 to 80 mol%, or WO 3 is 30 to 30 mol%. 8
The glass powder containing 0 mol% is 0.1 to 0.1% with respect to the oxide.
Addition of 10.0% by weight prevents grain boundary diffusion of oxygen and adsorbed water in the crystal, and thus a stable thermistor porcelain with little change in characteristics even when left at high temperature for a long time can be obtained. .

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は温度センサ,パワーサー
ミスタあるいは回路の温度補償用に用いられるサーミス
タ磁器に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermistor porcelain used for temperature compensation of a temperature sensor, a power thermistor or a circuit.

【0002】[0002]

【従来の技術】従来、この種の3d遷移金属酸化物から
なるサーミスタ磁器は、各々の元素比率を変えることに
よって、比抵抗及びサーミスタ定数(B定数)を広範囲
に制御することができる。特に、Cuを添加することに
よって比抵抗が10〜1000Ω・cmの抵抗素子を得る
ことができ、パワーサーミスタ,チップサーミスタ,ガ
ラス封入サーミスタ等に用いられている。
2. Description of the Related Art Conventionally, in the thermistor porcelain composed of this kind of 3d transition metal oxide, the specific resistance and the thermistor constant (B constant) can be controlled in a wide range by changing the respective element ratios. In particular, by adding Cu, a resistance element having a specific resistance of 10 to 1000 Ω · cm can be obtained, and it is used for a power thermistor, a chip thermistor, a glass-enclosed thermistor and the like.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、Cuを
添加したサーミスタ磁器は、無添加のサーミスタ磁器と
比較して高温での電気抵抗の経時変化が大きく、例えば
酸素以外の元素がMn75原子%,Ni20原子%,C
u5原子%のサーミスタ磁器で作られた直径5mm,厚さ
1mmのディスク型サーミスタを85℃で1000時間放
置すると、25℃における比抵抗が初期値に比べて10
%以上も変化し、高精度化する上で困難であるという問
題点を有していた。
However, the thermistor porcelain to which Cu is added has a large change in electric resistance with time at high temperature as compared with the thermistor porcelain without adding Cu. For example, elements other than oxygen include Mn of 75 atomic% and Ni of 20%. Atomic%, C
When a disk type thermistor with a diameter of 5 mm and a thickness of 1 mm made of u5 atom% porcelain is left at 85 ° C for 1000 hours, the specific resistance at 25 ° C is 10% of the initial value.
However, there is a problem in that it is difficult to achieve high accuracy because it changes by more than%.

【0004】このような特性の経時変化の原因は伝導形
態が複雑なため明確になっていないが、結晶中の酸素欠
陥濃度の変化や水分の吸着によるものと考えられてい
る。
The cause of such a change with time in characteristics is not clear because the conduction form is complicated, but it is considered to be due to a change in the concentration of oxygen defects in the crystal and adsorption of water.

【0005】本発明は上記従来の問題点を解決するもの
で、経時変化が小さく、高安定なサーミスタ素子を得る
ことができるサーミスタ磁器を提供するものである。
The present invention solves the above-mentioned conventional problems, and provides a thermistor porcelain that can obtain a highly stable thermistor element with a small change over time.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に本発明のサーミスタ磁器は、Cuを含有している3d
遷移金属を主成分とする酸化物に、V2O5を30〜95
モル%またはMoO3を55〜80モル%,あるいはW
O3を30〜80モル%含有するガラスを酸化物に対し
0.1〜10.0重量%添加したものである。
In order to achieve the above object, the thermistor porcelain of the present invention contains 3d containing Cu.
V 2 O 5 is added to an oxide containing a transition metal as a main component in an amount of 30 to 95
Mol% or 55-80 mol% MoO 3 , or W
O 3, is obtained by adding 0.1 to 10.0% by weight based on the oxide glass containing 30 to 80 mol%.

【0007】[0007]

【作用】この構成により、上記成分のガラスを添加した
ことによって、焼結後ガラス成分が粒界に析出し、比抵
抗,B定数等の特性変化の要因と考えられる結晶中の酸
素及び吸着した水分の粒界拡散を阻止することができ
る。
With this structure, by adding the glass of the above-mentioned components, the glass component is precipitated at the grain boundaries after sintering, and oxygen and adsorbed oxygen in the crystal, which is considered to be a factor of characteristic changes such as resistivity and B constant. The grain boundary diffusion of water can be prevented.

【0008】また、上記成分のガラスは、比抵抗が10
3〜1010Ω・cmで通常のガラスより比抵抗が小さく、
これらを添加してもサーミスタの主成分の電気特性に影
響を与えない。以上のように比抵抗の小さなガラスを添
加し、粒界に析出させることによって、経時変化が小さ
く高安定なサーミスタ磁器を得ることができる。
Further, the glass of the above components has a specific resistance of 10
3 to 10 10 Ω · cm, which has a smaller specific resistance than ordinary glass,
The addition of these does not affect the electrical characteristics of the main component of the thermistor. As described above, by adding glass having a low specific resistance and depositing it on the grain boundaries, it is possible to obtain a thermistor porcelain with a small change over time and high stability.

【0009】[0009]

【実施例】(実施例1)以下、本発明の第1の実施例に
ついて説明する。
(Embodiment 1) A first embodiment of the present invention will be described below.

【0010】Cuを初めとする3d遷移金属酸化物を酸
素以外の組成比が(表1)に示す組成となるように所定
量配合し、ボールミルにて16時間混合を行い、乾燥し
た後、800℃で2時間仮焼を行った。仮焼を行った
後、(表2)に示すV2O5を主成分とするガラス粉末を
添加し、ボールミルにて18時間粉砕を行い、乾燥した
後、10重量%のPVA(ポリビニルアルコール)の水
溶液を粉砕粉に対して8重量%添加し、造粒を行った。
さらに、直径5mm,厚さ1mmのディスク形状に加圧成形
した後、1100℃で2時間焼成して焼結体を得、その
両面に銀電極を焼き付けてディスク型試料を作成した。
A predetermined amount of 3d transition metal oxide such as Cu is blended so that the composition ratio other than oxygen is the composition shown in (Table 1), and the mixture is mixed in a ball mill for 16 hours and dried, and then 800 It was calcined at ℃ for 2 hours. After calcination, glass powder containing V 2 O 5 as a main component shown in (Table 2) was added, crushed in a ball mill for 18 hours, dried, and then 10% by weight of PVA (polyvinyl alcohol). 8% by weight of the aqueous solution of was added to the pulverized powder to granulate.
Further, it was pressure-molded into a disk shape having a diameter of 5 mm and a thickness of 1 mm, followed by firing at 1100 ° C. for 2 hours to obtain a sintered body, and silver electrodes were baked on both surfaces thereof to prepare a disk-shaped sample.

【0011】ここで添加したガラス粉末は、V2O5,P
2O5,BaO,Na2Oを(表2)に示すように所定量
配合し、例えばボールミルにて混合,粉砕した後、白金
るつぼにて1100℃で溶融,急冷してガラス化させ
た。このときの25℃におけるガラスの比抵抗は104
〜107Ω・cmであった。このガラスを粗粉砕した後、
ボールミルにて微粉砕を行い、ガラス粉末を得た。
The glass powder added here is V 2 O 5 , P
2 O 5 , BaO, and Na 2 O were mixed in predetermined amounts as shown in (Table 2), mixed and pulverized by, for example, a ball mill, then melted in a platinum crucible at 1100 ° C. and rapidly cooled to vitrify. The specific resistance of the glass at 25 ° C at this time is 10 4
It was about 10 7 Ω · cm. After roughly crushing this glass,
Finely pulverized with a ball mill to obtain glass powder.

【0012】[0012]

【表1】 [Table 1]

【0013】[0013]

【表2】 [Table 2]

【0014】(表3)に上記の工程を経て得られた金属
酸化物の組成を示す番号、ガラスの組成を示す番号、ガ
ラスの添加量とディスク型試料の比抵抗、B定数及び1
50℃で1000時間放置後の比抵抗及びB定数の初期
値に対する変化率を示す。比較のため、ガラス無添加の
試料の特性も*印付きで示す。
In Table 3, the number indicating the composition of the metal oxide obtained through the above steps, the number indicating the composition of the glass, the added amount of glass and the specific resistance of the disk type sample, the B constant and 1
The rate of change of the specific resistance and the B constant with respect to the initial values after being left at 50 ° C. for 1000 hours is shown. For comparison, the characteristics of the sample without glass are also marked with *.

【0015】[0015]

【表3】 [Table 3]

【0016】(表3)に示すようにガラスを添加しない
試料の150℃,1000時間放置後における抵抗変化
率が全て10%以上であるのに対し、ガラスを添加した
試料は10%以下に改善されている。また、B定数の変
化率もガラスを添加した試料はガラス無添加の試料より
も極めて小さい。
As shown in (Table 3), the resistance change rate of all the samples to which glass was not added after standing at 150 ° C. for 1000 hours was 10% or more, whereas the sample to which glass was added was improved to 10% or less. Has been done. Further, the rate of change of B constant is extremely smaller in the sample to which glass is added than in the sample to which glass is not added.

【0017】以上のようにこの第1の実施例によれば、
V2O5を30〜95%含有するガラス粉末を0.1〜1
0.0重量%添加したことにより、高温で長時間放置し
た後でも特性の変化が小さい安定なサーミスタ磁器を提
供することができる。
As described above, according to the first embodiment,
0.1 to 1 of glass powder containing 30 to 95% of V 2 O 5
By adding 0.0% by weight, it is possible to provide a stable thermistor porcelain with a small change in characteristics even after being left at high temperature for a long time.

【0018】(実施例2)以下本発明の第2の実施例に
ついて説明する。
(Second Embodiment) A second embodiment of the present invention will be described below.

【0019】実施例1とはガラスの成分が異なるディス
ク型試料を実施例1と同様の方法で作成した。ここで、
検討した組成は実施例1と同様に(表1)に示す3d遷
移金属元素の酸化物を主成分としており、MoO3を主
成分とするガラスを添加したものである。
A disk-shaped sample having a glass component different from that of Example 1 was prepared in the same manner as in Example 1. here,
The composition studied was the same as in Example 1 except that the oxide of the 3d transition metal element shown in (Table 1) was the main component, and glass containing MoO 3 as the main component was added.

【0020】ここで添加したガラスは、MoO3,P2O
5,BaOを(表4)に示すように所定量配合し、実施
例1と同様に例えばボールミルにて混合,粉砕した後、
白金るつぼにて1050℃で溶融,急冷してガラス化さ
せた。このときの25℃におけるガラスの比抵抗は10
9Ω・cm〜1010Ω・cmであった。このガラスを粗粉砕
した後、ボールミルにて微粉砕を行い、ガラス粉末を得
た。
The glass added here is MoO 3 , P 2 O.
5 , BaO was blended in a predetermined amount as shown in (Table 4), and was mixed and crushed in a ball mill, for example, as in Example 1, and then
It was melted at 1050 ° C. in a platinum crucible and rapidly cooled to be vitrified. At this time, the specific resistance of the glass at 25 ° C. is 10
It was 9 Ω · cm to 10 10 Ω · cm. This glass was roughly crushed and then finely crushed with a ball mill to obtain glass powder.

【0021】[0021]

【表4】 [Table 4]

【0022】(表5)に金属酸化物及びガラスの組成を
示す番号、ガラスの添加量、ディスク型試料の比抵抗、
B定数及び150℃で1000時間放置後の比抵抗及び
B定数の初期値に対する変化率を示す。比較のため、実
施例1でも示したガラス無添加の試料の特性も*印付き
で示す。
In Table 5, the numbers showing the compositions of the metal oxide and glass, the amount of glass added, the specific resistance of the disk type sample,
The B constant and the rate of change of the specific resistance after standing for 1000 hours at 150 ° C. and the B constant with respect to the initial value are shown. For comparison, the characteristics of the glass-free sample shown in Example 1 are also marked with *.

【0023】[0023]

【表5】 [Table 5]

【0024】(表5)に示すようにMoO3ガラスの比
抵抗は、V2O5ガラスと比較して大きいため、ガラス無
添加の試料と比較して試料の比抵抗が10%程度増加し
ているが、ガラスを添加しない試料の150℃,100
0時間放置後における抵抗変化率が全て10%以上であ
るのに対し、実施例1と同様にMoO3ガラスを添加し
た試料は10%以下に改善されている。また、B定数も
改善されている。
As shown in (Table 5), the resistivity of MoO 3 glass is higher than that of V 2 O 5 glass, so that the resistivity of the sample is increased by about 10% as compared with the sample without glass addition. However, the sample without glass was added at 150 ° C, 100
The rate of change in resistance after standing for 0 hour is all 10% or more, whereas the sample to which MoO 3 glass is added is improved to 10% or less as in Example 1. The B constant is also improved.

【0025】以上のようにこの第2の実施例によれば、
MoO3を30〜80%含有するガラス粉末を0.1〜
10.0重量%添加することにより、高温で長時間放置
後でも特性の変化が小さい安定なサーミスタ磁器を提供
することができる。
As described above, according to this second embodiment,
The glass powder containing 30 to 80% of MoO 3 is 0.1 to
By adding 10.0% by weight, it is possible to provide a stable thermistor porcelain with a small change in characteristics even after being left at high temperature for a long time.

【0026】(実施例3)以下本発明の第3の実施例に
ついて説明する。
(Third Embodiment) A third embodiment of the present invention will be described below.

【0027】実施例1とはガラスの成分が異なるディス
ク型試料を実施例1と同様の方法で作成した。ここで、
検討した組成は実施例1及び2と同様に(表1)に示す
3d遷移金属元素の酸化物を主成分としており、WO3
を主成分とするガラスを添加したものである。
A disk-shaped sample having a glass component different from that of Example 1 was prepared in the same manner as in Example 1. here,
The composition studied was based on the oxides of the 3d transition metal elements shown in (Table 1) as in Examples 1 and 2, and WO 3
The glass containing glass as a main component is added.

【0028】ここで添加したガラスは、WO3,P
2O5,BaO,Na2Oを(表6)に示すように所定量
配合し、例えばボールミルにて混合,粉砕した後、白金
るつぼにて1250℃で溶融,急冷してガラス化させ
た。このときの25℃におけるガラスの比抵抗は105
Ω・cm〜108Ω・cmであった。このガラスを粗粉砕し
た後、ボールミルにて微粉砕を行い、ガラス粉末を得
た。
The glass added here is WO 3 , P
2 O 5 , BaO and Na 2 O were mixed in predetermined amounts as shown in (Table 6), mixed and pulverized by, for example, a ball mill, then melted in a platinum crucible at 1250 ° C. and rapidly cooled to vitrify. At this time, the specific resistance of the glass at 25 ° C. is 10 5
Ω · cm to 10 8 Ω · cm. This glass was roughly crushed and then finely crushed with a ball mill to obtain glass powder.

【0029】[0029]

【表6】 [Table 6]

【0030】(表7)に金属酸化物及びガラスの組成を
示す番号、ガラスの添加量、ディスク型試料の比抵抗、
B定数及び150℃で1000時間放置後の比抵抗及び
B定数の初期値に対する変化率を示す。比較のため、実
施例1,2でも示したガラス無添加の試料の特性も*印
付きで示す。
In Table 7, the numbers showing the compositions of the metal oxide and glass, the amount of glass added, the specific resistance of the disk type sample,
The B constant and the rate of change of the specific resistance after standing for 1000 hours at 150 ° C. and the B constant with respect to the initial value are shown. For comparison, the characteristics of the glass-free sample shown in Examples 1 and 2 are also marked with *.

【0031】[0031]

【表7】 [Table 7]

【0032】(表7)に示すようにガラスを添加しない
試料の150℃,1000時間放置後における抵抗変化
率が全て10%以上であるのに対し、実施例1,2と同
様、WO3ガラスを添加した試料は10%以下に改善さ
れている。また、B定数も改善されている。
As shown in (Table 7), the resistance change rate of the sample to which no glass was added after leaving it at 150 ° C. for 1000 hours was 10% or more, whereas in Examples 1 and 2, WO 3 glass was used. The sample added with is improved to 10% or less. The B constant is also improved.

【0033】以上のようにこの第3の実施例によれば、
WO3を30〜80%含有するガラス粉末を0.1〜1
0.0重量%添加したことにより、高温で長時間放置後
でも特性の変化が小さい安定なサーミスタ磁器を提供す
ることができる。
As described above, according to the third embodiment,
0.1 to 1 of glass powder containing 30 to 80% of WO 3
By adding 0.0% by weight, it is possible to provide a stable thermistor porcelain with a small change in characteristics even after being left at high temperature for a long time.

【0034】以上、本実施例のガラスではガラス形成物
質としてP2O5,ガラス調整物質としてBaO,Na2
Oを使用したが、その他ガラス形成物質としてB2O3,
SiO2,ガラス調整物質としてCaO,Al2O3,G
eO2,Bi2O3,TeO2,Li2O,K2O,Ag
2O,PbO,SrO,CdO,ZnO,BeO等を使
用しても同様の効果を得ることができる。また、ガラス
の主成分であるV2O5は95モル%、MoO3は80モ
ル%、WO3は80モル%を超えると、ガラス化せず、
一方V2O5が30モル%、MoO3が55モル%、WO3
が30モル%未満では、ガラスの比抵抗が急激に大きく
なり、サーミスタ主成分に添加すると電気特性の制御が
困難になり、そのばらつきも急激に大きくなるため、本
発明の範囲外とした。さらに、ガラスの添加量に関し
て、0.1重量%未満では、経時変化を少なくし、高安
定のサーミスタ磁器を得るという効果はなく、一方1
0.0重量%を超えると主成分である酸化物の抵抗が急
激に大きくなり、電気特性のばらつきも急激に大きくな
るため実用的でなく、本発明の範囲外とした。
As described above, in the glass of this embodiment, P 2 O 5 was used as the glass forming substance, and BaO and Na 2 were used as the glass adjusting substances.
O was used, but as other glass-forming substances, B 2 O 3 ,
SiO 2 , glass-adjusting substances CaO, Al 2 O 3 , G
eO 2 , Bi 2 O 3 , TeO 2 , Li 2 O, K 2 O, Ag
The same effect can be obtained by using 2 O, PbO, SrO, CdO, ZnO, BeO or the like. Further, when V 2 O 5 which is the main component of glass exceeds 95 mol%, MoO 3 exceeds 80 mol%, and WO 3 exceeds 80 mol%, vitrification does not occur,
On the other hand, V 2 O 5 is 30 mol%, MoO 3 is 55 mol%, WO 3
Is less than 30 mol%, the specific resistance of the glass rapidly increases, and when it is added to the thermistor main component, it becomes difficult to control the electrical characteristics, and the variation thereof also rapidly increases. Furthermore, with respect to the amount of glass added, if it is less than 0.1% by weight, there is no effect of reducing the change over time and obtaining a highly stable thermistor porcelain.
If it exceeds 0.0% by weight, the resistance of the oxide, which is the main component, increases rapidly, and the variation in electrical characteristics also increases rapidly, which is not practical and is outside the scope of the present invention.

【0035】また、以上の実施例では、ガラスの主成分
としてV2O5,MoO3,WO3をそれぞれ1種類用いた
場合について説明したが、これは1つの主成分に対し、
他の1種類あるいは2種類を微量に添加したガラスを使
用しても同様な効果を得ることができる。
In the above embodiments, the case where one type of V 2 O 5 , MoO 3 and WO 3 is used as the main components of the glass has been described.
The same effect can be obtained by using glass in which a small amount of another one or two kinds is added.

【0036】[0036]

【発明の効果】以上のように本発明は、Cuを含有して
いる3d遷移金属を主成分とする酸化物に、V2O5を3
0〜95モル%、またはMoO3を55〜80モル%、
あるいはWO3を30〜80モル%含有するガラス粉末
を、酸化物に対し0.1〜10.0重量%添加したこと
により、経時変化の少ない、高安定なサーミスタ磁器を
実現できるもので、工業的価値の大なるものである。
INDUSTRIAL APPLICABILITY As described above, according to the present invention, V 2 O 5 is added to an oxide containing Cu-containing 3d transition metal as a main component.
0 to 95 mol%, or 55 to 80 mol% MoO 3 ,
Or glass powder containing WO 3 30 to 80 mol%, by the addition of 0.1 to 10.0% by weight based on the oxides, small aging, as it can realize a highly stable thermistor ceramic, industrial Is of great value.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】金属元素としてCr,Mn,Fe,Co,
Niのうち少なくとも1成分とCuとを含有する酸化物
に、V2O5を30〜95モル%含有するガラスを0.1
〜10.0重量%添加したことを特徴とするサーミスタ
磁器。
1. A metal element comprising Cr, Mn, Fe, Co,
0.1% of glass containing 30 to 95 mol% of V 2 O 5 is added to an oxide containing at least one component of Ni and Cu.
A thermistor porcelain, which is characterized by adding up to 10.0% by weight.
【請求項2】金属元素としてCr,Mn,Fe,Co,
Niのうち少なくとも1成分とCuとを含有する酸化物
に、MoO3を55〜80モル%含有するガラスを0.
1〜10.0重量%添加したことを特徴とするサーミス
タ磁器。
2. Metal elements such as Cr, Mn, Fe, Co,
A glass containing 55 to 80 mol% of MoO 3 is added to an oxide containing at least one component of Ni and Cu.
A thermistor porcelain, characterized in that 1 to 10.0% by weight is added.
【請求項3】金属元素としてCr,Mn,Fe,Co,
Niのうち少なくとも1成分とCuとを含有する酸化物
に、WO3を30〜80モル%含有するガラスを0.1
〜10.0重量%添加したことを特徴とするサーミスタ
磁器。
3. Metal elements such as Cr, Mn, Fe, Co,
0.1% of glass containing 30 to 80 mol% of WO 3 is added to an oxide containing at least one component of Ni and Cu.
A thermistor porcelain, which is characterized by adding up to 10.0% by weight.
JP3154429A 1991-06-26 1991-06-26 Thermistor porcelain Pending JPH053103A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3154429A JPH053103A (en) 1991-06-26 1991-06-26 Thermistor porcelain

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3154429A JPH053103A (en) 1991-06-26 1991-06-26 Thermistor porcelain

Publications (1)

Publication Number Publication Date
JPH053103A true JPH053103A (en) 1993-01-08

Family

ID=15583989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3154429A Pending JPH053103A (en) 1991-06-26 1991-06-26 Thermistor porcelain

Country Status (1)

Country Link
JP (1) JPH053103A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6773634B2 (en) 2000-02-01 2004-08-10 Ube Industries, Ltd. Conductive polymer composition and PTC element
JP2008177611A (en) * 2005-02-08 2008-07-31 Murata Mfg Co Ltd Surface mount negative thermistor
JP2013012583A (en) * 2011-06-29 2013-01-17 Nichicon Corp Critical temperature thermistor, thermistor element for the same and method for manufacturing the thermistor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6773634B2 (en) 2000-02-01 2004-08-10 Ube Industries, Ltd. Conductive polymer composition and PTC element
JP2008177611A (en) * 2005-02-08 2008-07-31 Murata Mfg Co Ltd Surface mount negative thermistor
US7548149B2 (en) 2005-02-08 2009-06-16 Murata Manufacturing Co., Ltd. Surface-mount negative-characteristic thermistor
JP2013012583A (en) * 2011-06-29 2013-01-17 Nichicon Corp Critical temperature thermistor, thermistor element for the same and method for manufacturing the thermistor element

Similar Documents

Publication Publication Date Title
US4015230A (en) Humidity sensitive ceramic resistor
US3394087A (en) Glass bonded resistor compositions containing refractory metal nitrides and refractory metal
IE54864B1 (en) Compositions for conductive resistor phases and methods for their preparation including a method for doping tin oxide
EP0132810A1 (en) Borosilicate glass composition
JPS5928962B2 (en) Manufacturing method of thick film varistor
US3441516A (en) Vitreous enamel resistor composition and resistor made therefrom
US4548742A (en) Resistor compositions
US4704370A (en) Sealing glass composition
JP2001118427A (en) Thick film electrode paste
TWI907380B (en) Glass used to coat semiconductor devices and semiconductor coating materials used in this application
US3703390A (en) Capacitor encapsulant and method of forming
JPH10233303A (en) NTC thermistor
US3421916A (en) Vitreous ceramic compositions
JPS63315560A (en) thermistor porcelain composition
JP3800614B1 (en) Thick film resistor paste and thick film resistor
JPH05335106A (en) Resistance paste
JP2001089188A (en) Composition for low temperature sealing
JPS6257242B2 (en)
JPH038765A (en) Voltage-dependent nonlinear resistor ceramic composition and method for producing varistor
JPH0443602A (en) Voltage-dependent nonlinear resistor ceramic composition and method for producing varistor
JPH0312357A (en) Low temperature burned ceramic substrate material
JPH0610929B2 (en) Ceramic composition for dielectric of multilayer capacitor
JPS5928961B2 (en) thick film varistor
EP0119863B1 (en) Process for the preparation of voltage non-linearity type resistors
JPH02311330A (en) Binder glass for ceramic capacitor