JPH053131B2 - - Google Patents
Info
- Publication number
- JPH053131B2 JPH053131B2 JP13887884A JP13887884A JPH053131B2 JP H053131 B2 JPH053131 B2 JP H053131B2 JP 13887884 A JP13887884 A JP 13887884A JP 13887884 A JP13887884 A JP 13887884A JP H053131 B2 JPH053131 B2 JP H053131B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- ray
- adhesive
- membrane
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 21
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 238000001015 X-ray lithography Methods 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229910000830 fernico Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
［発明の分野］
本発明はＸ線リソグラフイー用のマスク構造体
を作成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of making a mask structure for X-ray lithography.
［従来技術］
従来から知られているＸ線リソグラフイー用マ
スクの作成方法として、シリコンウエハー上にＸ
線透過層とパターン化されたＸ線吸収層とで構成
される膜体を形成した後、シリコンウエハーのマ
スク部分のエツチングで除去する方法がある。[Prior art] As a conventionally known method for creating a mask for X-ray lithography,
There is a method in which a film body consisting of a radiation-transmitting layer and a patterned X-ray absorption layer is formed and then removed by etching a masked portion of a silicon wafer.
しかし、この方法には多くの問題点があり、特
に作成に要する工数、時間、歩留り等の点で改善
の必要があり、Ｘ線リソグラフイー実用化を遅ら
せる大き原因となつている。 However, there are many problems with this method, and there is a need for improvement in terms of the number of man-hours required for production, time, yield, etc., and this is a major cause of delaying the practical application of X-ray lithography.
そこで、本発明者は、シリコンウエハーのエツ
チング等の煩雑な操作を要せず、面精度、バラツ
キ、歩留り等の点で優れる所謂転移（転写）方式
のマスク作成方法において、転移に伴なう煩雑
性、歩留りの悪さ等を解消しうる方法を見出し、
本発明に到達した。 Therefore, the present inventor proposed a so-called transfer (transfer) method mask making method that does not require complicated operations such as etching a silicon wafer and is superior in terms of surface accuracy, variation, yield, etc. We found a way to solve problems such as poor performance and yield,
We have arrived at the present invention.
［発明の目的］
本発明の１つの目的は、簡素化された工程で迅
速且つ高歩留りでＸ線リソグラフイー用マスクを
作成し得る方法を提供することにある。[Object of the Invention] One object of the present invention is to provide a method for producing a mask for X-ray lithography quickly and with a high yield through a simplified process.
本発明の他の目的は、所謂転移方式のマスク作
成方法において、転移を簡便且つ高歩留りで行な
うことのできるＸ線リソグラフイー用マスクの作
成方法を提供することにある。 Another object of the present invention is to provide a method for making a mask for X-ray lithography in which transfer can be performed simply and with high yield in a so-called transfer method mask making method.
上記目的は、平板上にＸ線透過層及びＸ線吸収
層を構成分とするマスク膜体を形成した後、この
膜体を保持体に接着・転移してＸ線リソグラフイ
ー用マスクを作成する方法において、前記保持体
の前記膜体との接着部位に溝を設けて膜体接着用
剤の流動を制御するこにより、達成される。 The above purpose is to form a mask film body consisting of an X-ray transparent layer and an X-ray absorption layer on a flat plate, and then adhere and transfer this film body to a holder to create a mask for X-ray lithography. In the method, this is achieved by providing a groove in the adhesive portion of the holder with the membrane body to control the flow of the membrane adhesive agent.
［発明の概要］
本発明のＸ線リソグラフイー用マスクの作成方
法は、所謂転移方式のマスク作成方法を用いてお
り、例えば大略第１図に示した工程を行なうもの
である。[Summary of the Invention] The method for making a mask for X-ray lithography of the present invention uses a so-called transfer method mask making method, and includes, for example, the steps roughly shown in FIG.
第１図の例では、平板１上に、Ｘ線透過層２、
マスクパターン３を有するＸ線吸収層４、及び保
護層の役割も果たすＸ線透過層５を順次設層して
マスク膜体６を形成する。〔第１図Ａ〕
平板１は、通常、石英、シリコン等の無機結
晶、ガラス、セラミツク、鉄、コバルト、ニツケ
ル、銅、黄銅、鉄鋼、ステンレス、フエルニコ、
インバール等の金属、プラスチツクなどを平面性
良く加工した板で構成される。平板１の形状は、
作成するマスク構造体の形状に合せて選択され
る。 In the example shown in FIG. 1, an X-ray transparent layer 2,
A mask film body 6 is formed by sequentially depositing an X-ray absorbing layer 4 having a mask pattern 3 and an X-ray transmitting layer 5 which also serves as a protective layer. [Figure 1A] The flat plate 1 is usually made of inorganic crystal such as quartz or silicon, glass, ceramic, iron, cobalt, nickel, copper, brass, steel, stainless steel, Fernico,
It is made of a plate made of metal such as Invar, plastic, etc. with good flatness. The shape of the flat plate 1 is
It is selected according to the shape of the mask structure to be created.
Ｘ線透過層２，５は、ポリイミド、ポリアミ
ド、ポリエステル等の高分子溶液をスキナー、デ
イツプ、スプレー、スクイジー等の塗布方法で塗
布・乾燥して設層した高分子膜、窒化けい素、窒
化ほう素、二酸化けい素、炭化けい素等の無機材
料をCVD等により設層した無機質膜、あるいは
高分子膜と無機質膜との複合膜で構成される。Ｘ
線透過層２，５の層厚は、通常約2μｍ程度とさ
れる。 The X-ray transparent layers 2 and 5 are made of a polymer film formed by applying and drying a polymer solution of polyimide, polyamide, polyester, etc. using a skinner, dip, spray, squeegee, etc. coating method, silicon nitride, boron nitride, etc. It consists of an inorganic film formed by layering inorganic materials such as silicon dioxide, silicon dioxide, and silicon carbide by CVD, or a composite film of a polymer film and an inorganic film. X
The layer thickness of the radiation-transmitting layers 2 and 5 is usually about 2 μm.
マスクパターン３は金、白金、パラジウム、イ
ンジウム、ニツケル、タングステン等の貴金属、
重金属で構成され、パターンの形成は、フオトリ
ソグラフイーあるいはＸ線、エレクトロンビー
ム、イオンビーム等を利用したリソグラフイーな
どにより行なわれる。Ｘ線吸収層４の層厚は、通
常0.2〜0.7μｍ程度とされる。 Mask pattern 3 is made of precious metals such as gold, platinum, palladium, indium, nickel, tungsten, etc.
It is made of heavy metal, and the pattern is formed by photolithography or lithography using X-rays, electron beams, ion beams, etc. The layer thickness of the X-ray absorption layer 4 is usually about 0.2 to 0.7 μm.
次いで、マスク膜体６との接着面７に接着用剤
８を付着させた保持体９を、第１図Ｂ及びＣに示
した様に膜体６の上方から近ずけて当接させ、接
着用剤８の硬化により、マスク膜体６と保持体９
を接着させる。保持体９は、例えば円環等の形状
を有し、石英、シリコン等の無機結晶、ガラス、
セラミツク、鉄、コバルト、ニツケル、アルミニ
ウム、黄銅、リン青銅等の金属などで構成され
る。接着用剤８としては、ニポキシ系、エマルジ
ヨン系、アミン系等があり、熱硬化型、光硬化
型、溶剤型等の種類は問わないが、特に、疎水系
であり且つ耐熱性の良好な接着剤が好ましい。 Next, a holder 9 having an adhesive 8 adhered to its adhesive surface 7 with the mask membrane 6 is brought into contact with the membrane 6 from above, as shown in FIGS. 1B and C. By curing the adhesive 8, the mask film body 6 and the holding body 9 are bonded together.
Glue. The holder 9 has a shape such as a ring, for example, and is made of inorganic crystal such as quartz, silicon, glass,
It is composed of metals such as ceramic, iron, cobalt, nickel, aluminum, brass, and phosphor bronze. Adhesives 8 include nipoxy-based, emulsion-based, amine-based, etc., and may be of any type such as thermosetting, photocuring, or solvent-based, but especially adhesives that are hydrophobic and have good heat resistance. Agents are preferred.
ここで、本発明の特徴は、例えば第１図に示さ
れた保持体９のマスク膜体６との接着部位７に溝
１０を設けて膜体接着用剤８の流動を制御するこ
とにある。即ち、第１図の保持体９は接着面７の
円環内周面寄りに１条のコ字条横断面の円周溝１
０を有することにより、接着用剤８の円環内周面
方向への横溢を防止している。また、第１図と同
一要素を同一符合で表わすと、第２図に示した実
施例では、保持体９は接着面７の円環内周面寄り
及び円環外周面寄りに２条のコ字条溝横断面の円
周溝１０，１０を有することにより、接着用剤８
の円環内周面方向及び円環外周面方向への横溢を
防止している。溝の数は１及び２に限定されず３
以上でもよく、また溝の形状は接着用剤の流動を
制御し得るものであれば何れでもよい。 Here, a feature of the present invention is that, for example, a groove 10 is provided in the bonding area 7 of the holder 9 to the mask membrane 6 shown in FIG. 1 to control the flow of the membrane adhesive 8. . That is, the holder 9 in FIG.
0 prevents the adhesive 8 from overflowing toward the inner circumferential surface of the ring. Further, the same elements as in FIG. 1 are represented by the same reference numerals. In the embodiment shown in FIG. By having the circumferential grooves 10, 10 with the cross section of the groove, the adhesive 8
This prevents overflow in the direction of the inner circumferential surface of the ring and the direction of the outer circumferential surface of the ring. The number of grooves is not limited to 1 and 2, but can be 3.
The shape of the groove may be any shape as long as it can control the flow of the adhesive.
第１図に戻ると、接着用剤８が十分に硬化した
ら、必要に応じて、マスク膜体６の環体９からの
はみ出し部分等を切除した後、膜体６と平板１と
の分離面〔第１図Ｃの１１〕
で、刃物等による機械的方法、紫外線等による分
解、変質法、超音波を用いる方法等により、膜体
６と平板１とを分離して、マスク構造体１２を得
る。 Returning to FIG. 1, once the adhesive 8 has sufficiently hardened, the portions of the mask membrane 6 protruding from the annular body 9 are cut off as necessary, and then the separation surface between the membrane 6 and the flat plate 1 is removed. [11 in FIG. 1C] Then, the film body 6 and the flat plate 1 are separated by a mechanical method using a knife or the like, decomposition using ultraviolet rays, a modification method, a method using ultrasonic waves, etc., and the mask structure 12 is separated. obtain.
［発明の効果］
本発明によれば、所謂転移方式のＸ線リソグラ
フイー用マスク作成方法において、接着用剤の横
溢によるマスク構造体の歩留りの低下がなく、接
着用剤の塗工、マスク膜体の転移の作業性が改善
され、これらの操作を簡便且つ高歩留りで行なう
ことができ、従つて簡素化された工程で迅速且つ
高歩留りでＸ線リソグラフイー用マスクを作成す
ることができる。[Effects of the Invention] According to the present invention, in the so-called transfer method method for making a mask for X-ray lithography, there is no reduction in the yield of the mask structure due to overflow of the adhesive, and the coating of the adhesive and the mask film can be easily performed. The workability of body transfer is improved, and these operations can be performed easily and with a high yield, and therefore, masks for X-ray lithography can be produced quickly and with a high yield through a simplified process.
第１図Ａ〜Ｄは本発明のＸ線リソグラフイー用
マスクの作成方法の一実施例におけるマスク作成
工程の流れを説明するための模式図、第２図は第
１図Ｃに相当し、本発明のＸ線リソグラフイー用
マスクの作成方法の他の実施例を説明するための
模式図である。
１……平板、２……Ｘ線透過層、３……マスク
パターン、４……Ｘ線吸収層、５……Ｘ線透過
層、６……マスク膜体、７……接着部位、８……
膜体接着用剤、９……保持体、１０……溝、１２
……マスク構造体。
1A to 1D are schematic diagrams for explaining the flow of the mask manufacturing process in an embodiment of the method for creating a mask for X-ray lithography of the present invention, and FIG. 2 corresponds to FIG. FIG. 3 is a schematic diagram for explaining another embodiment of the method for creating a mask for X-ray lithography according to the invention. DESCRIPTION OF SYMBOLS 1... Flat plate, 2... X-ray transparent layer, 3... Mask pattern, 4... X-ray absorption layer, 5... …
Membrane adhesive agent, 9...Holding body, 10...Groove, 12
...Mask structure.
Claims (1)
とするマスク膜体を形成した後、この膜体を保持
体に接着・転移してＸ線リソグラフイー用マスク
を作成する方法において、前記保持体の前記膜体
との接着部位に溝を設けて膜体接着用剤の流動を
制御することを特徴とするＸ線リソグラフイー用
マスクの作成方法。1. A method for creating a mask for X-ray lithography by forming a mask film body comprising an X-ray transparent layer and an X-ray absorption layer on a flat plate, and then adhering and transferring this film body to a holder, A method for making a mask for X-ray lithography, characterized in that a groove is provided in a portion of the holder where the membrane is bonded to control the flow of a membrane adhesive.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59138878A JPS6118957A (en) | 1984-07-06 | 1984-07-06 | Preparation of mask for x-ray lithography |
| DE3524196A DE3524196C3 (en) | 1984-07-06 | 1985-07-05 | Lithography mask |
| US07/150,494 US4804600A (en) | 1984-07-06 | 1988-02-01 | Lithographic mask structure and process for preparing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59138878A JPS6118957A (en) | 1984-07-06 | 1984-07-06 | Preparation of mask for x-ray lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6118957A JPS6118957A (en) | 1986-01-27 |
| JPH053131B2 true JPH053131B2 (en) | 1993-01-14 |
Family
ID=15232221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59138878A Granted JPS6118957A (en) | 1984-07-06 | 1984-07-06 | Preparation of mask for x-ray lithography |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6118957A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0795512B2 (en) * | 1987-05-14 | 1995-10-11 | 沖電気工業株式会社 | Method for manufacturing membrane for X-ray exposure mask |
-
1984
- 1984-07-06 JP JP59138878A patent/JPS6118957A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6118957A (en) | 1986-01-27 |
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