JPH05325183A - Manufacture of magnetic disk - Google Patents
Manufacture of magnetic diskInfo
- Publication number
- JPH05325183A JPH05325183A JP12769392A JP12769392A JPH05325183A JP H05325183 A JPH05325183 A JP H05325183A JP 12769392 A JP12769392 A JP 12769392A JP 12769392 A JP12769392 A JP 12769392A JP H05325183 A JPH05325183 A JP H05325183A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- magnetic disk
- substrate
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000010410 layer Substances 0.000 claims abstract description 59
- 239000011241 protective layer Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000000470 constituent Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- 229910000684 Cobalt-chrome Inorganic materials 0.000 abstract description 14
- 229910045601 alloy Inorganic materials 0.000 abstract description 14
- 239000000956 alloy Substances 0.000 abstract description 14
- 239000010952 cobalt-chrome Substances 0.000 abstract description 14
- 238000005204 segregation Methods 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910019222 CoCrPt Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910052693 Europium Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- -1 M o Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910001566 austenite Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、高い保磁力を有する
磁気ディスクが得られるようにした、磁気ディスクの製
造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a magnetic disk, which can obtain a magnetic disk having a high coercive force.
【0002】[0002]
【従来の技術】周知のように、情報量の増大に対応する
ため、磁気ディスク装置の高容量化及び磁気ディスクの
高密度化が図られている。記録密度向上のためには、記
録媒体(磁性体層)の厚みを薄くすることが必要とされ
ている。この点から、媒体膜厚減少に限界がみられる塗
布型磁気ディスクに代わるものとして、基板上にスパッ
タ法により磁性体層を形成した構造のスパッタ薄膜型磁
気ディスクが注目されており、その一部は実用に供され
ている。2. Description of the Related Art As is well known, in order to cope with an increase in the amount of information, the capacity of magnetic disk devices and the density of magnetic disks have been increased. In order to improve the recording density, it is necessary to reduce the thickness of the recording medium (magnetic layer). From this point, a sputtered thin film magnetic disk having a structure in which a magnetic layer is formed on a substrate by a sputtering method has been attracting attention as an alternative to the coating type magnetic disk in which the reduction in the thickness of the medium is seen. Has been put to practical use.
【0003】また、磁性体層(磁性層)の厚みを薄くす
ることとともに、保磁力(Hc)を高めることが記録密度
向上のための有力な手段となっている。そのため、従
来、スパッタ薄膜型磁気ディスクにおいては、保磁力を
高めるために基板温度を通常の温度 150〜 250℃程度よ
りも高くした状態で、基板の上に、CoNiCrなどのCoCr系
合金よりなる磁性体層(磁性層)、保護層を順にスパッ
タ法により形成して、磁気ディスクを作製するようにし
た方法が知られている(例えば、石川ほか,第11回日本
応用磁気学会学術講演概要集,1pA−10,p.18,1987、
堀川ほか,第14回日本応用磁気学会学術講演概要集,8
pB−16,p.27,1990)。Further, reducing the thickness of the magnetic layer (magnetic layer) and increasing the coercive force (Hc) are effective means for improving the recording density. Therefore, in the past, in sputtered thin-film magnetic disks, in order to increase the coercive force, the substrate temperature was set higher than the normal temperature of 150 to 250 ° C, and the magnetic layer made of CoCr-based alloy such as CoNiCr was placed on the substrate. A method is known in which a magnetic disk is produced by sequentially forming a body layer (magnetic layer) and a protective layer by a sputtering method (for example, Ishikawa et al., 11th Annual Meeting of the Japan Society for Applied Magnetics, Abstracts, 1pA-10, p.18, 1987,
Horikawa et al., Proc. Of the 14th Japan Society for Applied Magnetics, 8
pB-16, p.27, 1990).
【0004】上記のようにした磁気ディスクの製造方法
では、CoCr系合金よりなる磁性体層上に、保護層として
C(炭素)よりなる C保護層を形成するようにしてい
る。そして、保磁力向上の理由としては、基板温度を通
常の温度よりも高めることにより、CoCr系合金磁性体層
中の結晶粒界へのCrの偏析が促進されることにあると考
えられている。In the magnetic disk manufacturing method as described above, a protective layer is formed on the magnetic layer made of a CoCr alloy.
A C protective layer made of C (carbon) is formed. It is believed that the reason for the improvement in coercive force is that the segregation of Cr to the grain boundaries in the CoCr-based alloy magnetic layer is promoted by raising the substrate temperature above the normal temperature. ..
【0005】[0005]
【発明が解決しようとする課題】ところが、この従来の
技術では、例えば基板温度を 300℃よりも高くした状態
で、CoCr系合金磁性体層、 C保護層を順に形成するよう
にした場合には、保磁力が低下するという問題がある。
そこで、本発明者らは、この保磁力低下の原因について
研究を重ねた結果、基板温度 250℃以上にて基板の上
に、CoCr系合金磁性体層、 C保護層を順にスパッタ法に
より形成する場合、保護層の構成材料である CがCoCr系
合金磁性体層中へ拡散することを突き止めた。However, in this conventional technique, for example, when the CoCr alloy magnetic layer and the C protective layer are sequentially formed with the substrate temperature higher than 300 ° C. However, there is a problem that the coercive force is lowered.
Therefore, as a result of repeated research on the cause of this decrease in coercive force, the present inventors formed a CoCr-based alloy magnetic layer and a C protective layer in this order on the substrate by a sputtering method at a substrate temperature of 250 ° C or higher. In this case, it was found that C, which is a constituent material of the protective layer, diffuses into the CoCr alloy magnetic layer.
【0006】この発明は、上記の知見に基づいて考え出
されたものであって、基板温度 250℃以上にて基板の上
に、磁性体層、保護層を順にスパッタ法により形成し
て、磁気ディスクを製造するに際し、保護層の構成材料
として上記基板温度において磁性体層中へ拡散しない非
拡散性元素を用いることにより、高い保磁力を有する磁
気ディスクが得られるようにした、磁気ディスクの製造
方法の提供をその目的とする。The present invention was conceived based on the above findings, and a magnetic layer and a protective layer were sequentially formed on a substrate at a substrate temperature of 250 ° C. or higher by a sputtering method to obtain a magnetic layer. When a disk is manufactured, a non-diffusible element that does not diffuse into the magnetic layer at the substrate temperature is used as a constituent material of the protective layer so that a magnetic disk having a high coercive force can be obtained. The purpose is to provide a method.
【0007】[0007]
【課題を解決するための手段】上記の目的を達成するた
めに、この発明による磁気ディスクの製造方法は、基板
温度 250℃以上にて基板の上に、磁性体層、保護層を順
にスパッタ法により形成して磁気ディスクを製造する方
法において、前記保護層の構成材料として前記基板温度
において前記磁性体層中へ拡散しない非拡散性元素を用
いることを特徴とする。In order to achieve the above object, a method of manufacturing a magnetic disk according to the present invention is a sputtering method in which a magnetic layer and a protective layer are sequentially formed on a substrate at a substrate temperature of 250 ° C. or higher. In the method for producing a magnetic disk by using the above method, a non-diffusible element that does not diffuse into the magnetic layer at the substrate temperature is used as a constituent material of the protective layer.
【0008】[0008]
【作用】本発明者らは、上述した保磁力低下の原因につ
いて研究を重ねた結果、基板温度 250℃以上にて基板の
上に、CoCr系合金磁性体層、 C保護層を順にスパッタ法
により形成する場合、 C保護層の構成材料である CがCo
Cr系合金磁性体層中へ拡散すること突き止めた。このこ
とから、CoCr系合金磁性体層中の結晶粒界に基板温度を
高めることによって偏析が促進されるCrの偏析量が、上
記 Cの拡散によって減少することにより、保磁力が低下
するものと考えた。また、基板上に、非磁性元素であり
広く用いられる例えばCrよりなるCr下地層、磁性体層、
C保護層を順に有する構造の磁気ディスクにおいては、
磁性体層上に C保護層を形成すると、Cr下地層から磁性
体層中の結晶粒界へ偏析していたCrを引き寄せ、Cr偏析
量が減少することにより、保磁力が低下するものと考え
た。なお、基板上に、Cr下地層、CoCr系合金磁性体層、
及び C保護層を有する構造の磁気ディスクにおいても、
上記のことから、CoCr系合金磁性体層におけるCr偏析量
が減少し、保磁力が低下するものと考えた。[Function] As a result of repeated research on the cause of the above-mentioned decrease in coercive force, the present inventors found that the CoCr alloy magnetic layer and the C protective layer were sequentially formed on the substrate by the sputtering method at a substrate temperature of 250 ° C. or higher. When forming, C, which is the constituent material of the C protective layer, is Co
It was found that the Cr-based alloy magnetic material diffuses into the layer. From this, it is assumed that the segregation amount of Cr, in which the segregation is promoted by increasing the substrate temperature at the crystal grain boundary in the CoCr-based alloy magnetic layer, is decreased by the diffusion of C, and the coercive force is reduced. Thought. In addition, a Cr underlayer, a magnetic layer, made of, for example, Cr, which is a non-magnetic element and is widely used,
In a magnetic disk having a structure having a C protective layer in order,
It is considered that when a C protective layer is formed on the magnetic layer, Cr segregated from the Cr underlayer to the crystal grain boundaries in the magnetic layer is attracted, and the amount of Cr segregation decreases, resulting in a decrease in coercive force. It was On the substrate, Cr underlayer, CoCr alloy magnetic layer,
Also in a magnetic disk with a structure having a C protection layer,
From the above, it was considered that the amount of Cr segregated in the CoCr-based alloy magnetic layer was reduced and the coercive force was reduced.
【0009】そこで、保護層の構成材料として、 250℃
以上の基板温度において磁性体層中へ拡散しない非拡散
性元素を用いることにより、磁性体層中の結晶粒界にお
けるCr偏析量の減少をなくして、高い保磁力を有する磁
気ディスクが得られるようにしたのである。上記保護層
を構成する非拡散性元素としては、Li、Be、B 、Na、M
g、Al、Si、P 、S 、K 、Ca、Sc、Ti、V 、Cr、Mn、F
e、Co、Ni、Cu、Zn、Ge、As、Se、Sr、Y 、Zr、Nb、M
o、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Te、I 、Ba、L
a、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Y
b、Lu、Hf、Ta、W 、Re、Os、Ir、Pt、Au、Tl、Pb、及
びBiの群から選ばれた1種、もしくは、H 、Li、Be、B
、C 、N、O 、F 、Na、Mg、Al、Si、P 、S 、Cl、K 、
Ca、Sc、Ti、V 、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、G
e、As、Se、Br、Rb、Sr、Y 、Zr、Nb、Mo、Ru、Rh、P
d、Ag、Cd、In、Sn、Sb、Te、I 、Ba、La、Ce、Pr、N
d、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Hf、T
a、W 、Re、Os、Ir、Pt、Au、Tl、Pb、及びBiの群から
選ばれた2種以上を挙げることができる。なお、潤滑性
を高めるために、必要に応じて上記非拡散性元素よりな
る保護層上に、従来の Cなどを用いた層を形成するよう
にしてもよい。Therefore, as a constituent material of the protective layer, 250 ° C.
By using a non-diffusible element that does not diffuse into the magnetic layer at the above substrate temperature, it is possible to obtain a magnetic disk with a high coercive force by eliminating the decrease in the amount of Cr segregation at the grain boundaries in the magnetic layer. I did it. As the non-diffusible element forming the protective layer, Li, Be, B, Na, M
g, Al, Si, P, S, K, Ca, Sc, Ti, V, Cr, Mn, F
e, Co, Ni, Cu, Zn, Ge, As, Se, Sr, Y, Zr, Nb, M
o, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, I, Ba, L
a, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Y
b, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Tl, Pb, and Bi, or one of H, Li, Be, and B
, C, N, O, F, Na, Mg, Al, Si, P, S, Cl, K,
Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, G
e, As, Se, Br, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, P
d, Ag, Cd, In, Sn, Sb, Te, I, Ba, La, Ce, Pr, N
d, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, T
Two or more kinds selected from the group of a, W, Re, Os, Ir, Pt, Au, Tl, Pb, and Bi can be mentioned. In order to improve lubricity, a conventional layer using C or the like may be formed on the protective layer made of the above non-diffusing element, if necessary.
【0010】この発明による方法においては、基板とし
ては、カーボン基板、強化ガラス基板、結晶化ガラス基
板、セラミック基板、チタン基板、およびシリコン基板
などが挙げられる。なお、アルミニウム合金基板、無電
解NiP めっき基板は、基板温度 250℃以上においては変
形し易いなどの耐熱性点で劣り、現状では好ましくな
い。In the method according to the present invention, examples of the substrate include a carbon substrate, a tempered glass substrate, a crystallized glass substrate, a ceramic substrate, a titanium substrate, and a silicon substrate. Note that the aluminum alloy substrate and the electroless NiP plated substrate are inferior in heat resistance such as being easily deformed at a substrate temperature of 250 ° C. or higher, and are not preferable at present.
【0011】この発明による方法が適用される磁気ディ
スクの磁性体層の媒体材料としては、CoNiCr、CoCrTa、
CoCrPtなどのCoCr系合金が挙げられる。また、下地層と
して例えばCr下地層を有する磁性体層の媒体材料として
は、上記CoNiCr、CoCrTa、CoCrPtなどの他に、CoNiPt、
γ−Fe2O3 などが挙げられる。The medium material of the magnetic layer of the magnetic disk to which the method according to the present invention is applied is CoNiCr, CoCrTa,
Examples include CoCr-based alloys such as CoCrPt. Further, as the medium material of the magnetic layer having a Cr underlayer as the underlayer, CoNiPt, CoCrPt, CoCrTa, CoCrPt, etc.
γ-Fe 2 O 3 and the like can be mentioned.
【0012】[0012]
【実施例】以下、この発明の実施例について説明する。 〔実施例1〕まず、磁気ディスクの基板としてのカーボ
ン基板の作製について説明すると、炭化焼成後にガラス
質炭素となる熱硬化性樹脂であるフェノール・フォルム
アルデヒド樹脂を磁気ディスク形状に成形した後、N2ガ
ス雰囲気中で1000〜1500℃の温度で予備焼成する。次い
で、これを熱間静水圧加圧装置(HIP)を使用して25
00℃に加熱しつつ2000気圧の等方的圧力を加えてHIP
処理する。この得られた成形体に所定の周端面加工、表
面研磨を施して、厚さ1.27mmの3.5 インチ用のカーボン
基板とした。Embodiments of the present invention will be described below. [Example 1] First, the production of a carbon substrate as a magnetic disk substrate will be described. After molding a phenol-formaldehyde resin, which is a thermosetting resin that becomes vitreous carbon after carbonization and firing, into a magnetic disk shape, Pre-baking is performed at a temperature of 1000 to 1500 ° C in a two- gas atmosphere. It is then placed in a hot isostatic press (HIP) 25
HIP by applying isotropic pressure of 2000 atm while heating to 00 ℃
To process. The obtained molded body was subjected to predetermined peripheral end face processing and surface polishing to obtain a 3.5-inch carbon substrate having a thickness of 1.27 mm.
【0013】インライン式D.C.マグネトロンスパッタ装
置を用いて、カーボン基板上に、下地層として厚み3000
ÅのCr層と、CoCr系合金磁性体層として厚み 600ÅのCo
62.5Ni30Cr7.5 層と、保護層として厚み 300ÅのZr層と
を、この記述順に順次形成しして、磁気ディスクを作製
した。この場合、Arガス圧は3×10-3Torrとし、基板温
度を 250〜 600℃の範囲(図1参照)で変化させ、各基
板温度条件毎に、磁気ディスクを作製した。また、上記
のZr層に代えて C層を形成して比較例としての磁気ディ
スクを作製した。Using an in-line DC magnetron sputtering device, a carbon substrate having a thickness of 3000 as an underlayer is formed.
Å Cr layer and CoCr alloy magnetic layer 600 Å
A magnetic disk was manufactured by sequentially forming a 62.5 Ni 30 Cr 7.5 layer and a Zr layer having a thickness of 300 Å as a protective layer in this order of description. In this case, the Ar gas pressure was 3 × 10 −3 Torr, the substrate temperature was changed in the range of 250 to 600 ° C. (see FIG. 1), and the magnetic disk was manufactured under each substrate temperature condition. In addition, a C layer was formed instead of the Zr layer to manufacture a magnetic disk as a comparative example.
【0014】作製したこれらの各磁気ディスクから8×
8mm寸法の試料を切り出し、振動試料型磁力計(VS
M)を用いて磁気特性を測定した。保磁力Hcの測定結果
を図1に示す。図1から理解されるように、比較例の磁
気ディスクにおいては、基板温度を 300℃よりも高める
と、 C保護層の構成材料である CのCo62.5Ni30Cr7.5 層
中への拡散がより進行することにより、磁性体層である
Co62.5Ni30Cr7.5 層中の結晶粒界におけるCr偏析量が減
少し、基板温度を高めるに従って保磁力が低下してい
る。これに対して、この実施例の方法では、保護層の構
成材料として、 250℃以上の基板温度においてもCo62.5
Ni30Cr7.5 層へ拡散しない非拡散性元素であるZrを用い
るようにしたので、Co62.5Ni30Cr7.5 層中の結晶粒界に
基板温度を高めることによって偏析が促進されるCrの偏
析量が、Zrによって減少することがなく、基板温度を高
めるに従って保磁力が向上し、高い保磁力を有する磁気
ディスクが得られた。8 × from each of these magnetic disks produced
A sample with a size of 8 mm was cut out and used as a vibrating sample magnetometer (VS
Magnetic properties were measured using M). The measurement result of the coercive force Hc is shown in FIG. As can be seen from FIG. 1, in the magnetic disk of the comparative example, when the substrate temperature is raised above 300 ° C., C, which is a constituent material of the C protective layer, is more diffused in the Co 62.5 Ni 30 Cr 7.5 layer. As it progresses, it becomes a magnetic layer.
The amount of Cr segregated at the grain boundaries in the Co 62.5 Ni 30 Cr 7.5 layer decreases, and the coercive force decreases as the substrate temperature increases. On the other hand, in the method of this example, as a constituent material of the protective layer, Co 62.5
Since Zr, which is a non-diffusible element that does not diffuse into the Ni 30 Cr 7.5 layer, is used, the segregation amount of Cr is promoted by increasing the substrate temperature at the grain boundary in the Co 62.5 Ni 30 Cr 7.5 layer. However, it was not decreased by Zr, and the coercive force was improved as the substrate temperature was increased, and a magnetic disk having a high coercive force was obtained.
【0015】なお、基板温度 400℃にて作製した実施例
及び比較例による磁気ディスクについて、その深さ(厚
み)方向の組成をESCA分析(electron spectroscop
y for chemical analysis )により分析した。その結
果、比較例による磁気ディスクでは、 CのCo62.5Ni30Cr
7.5 層中への拡散が確認された。これに対して、実施例
による磁気ディスクでは、ZrのCo62.5Ni30Cr7.5 層中へ
の拡散は、認められなかった。The compositions in the depth (thickness) direction of the magnetic disks according to Examples and Comparative Examples manufactured at a substrate temperature of 400 ° C. were analyzed by ESCA (electron spectroscopy).
y for chemical analysis). As a result, in the magnetic disk according to the comparative example, C Co 62.5 Ni 30 Cr
Diffusion into 7.5 layers was confirmed. On the other hand, in the magnetic disk according to the example, diffusion of Zr into the Co 62.5 Ni 30 Cr 7.5 layer was not observed.
【0016】〔実施例2〕基板としてカーボン基板に代
えて以下に述べる基板を使用するようにしたこと以外
は、実施例1と同様の方法で磁気ディスクをそれぞれ作
製し、各磁気ディスクの保磁力を測定した。その結果、
強化ガラス基板、結晶化ガラス基板、セラミック基板、
チタン基板、及びシリコン基板をそれぞれ用いた場合に
も、これらの基板の種類によらず、実施例1と同様の保
磁力を有する磁気ディスクが得られた。Example 2 A magnetic disk was manufactured in the same manner as in Example 1 except that the following substrate was used instead of the carbon substrate as the substrate, and the coercive force of each magnetic disk was produced. Was measured. as a result,
Tempered glass substrate, crystallized glass substrate, ceramic substrate,
Even when a titanium substrate and a silicon substrate were used, a magnetic disk having a coercive force similar to that of Example 1 was obtained regardless of the types of these substrates.
【0017】〔実施例3〕保護層の構成材料としてZrに
代えて以下に述べるものを用いるようにしたこと以外
は、実施例1と同様の方法で磁気ディスクをそれぞれ作
製し、各磁気ディスクの保磁力を測定した。その結果、
Be、Mg、Al、Si、Sc、Ti、V 、Cr、Cu、Zn、Ge、Y 、N
b、Mo、Pd、Hf、Ta、W 、Pt、Au、Pb、Bi、La、Ce、P
r、Nd、及びEuをそれぞれ単独で用いて保護層を形成し
た場合にも、これらの構成材料の種類によらず、実施例
1と同様の保磁力を有する磁気ディスクが得られた。[Embodiment 3] Magnetic disks were manufactured in the same manner as in Embodiment 1 except that the following constituent materials were used instead of Zr as the constituent material of the protective layer. The coercive force was measured. as a result,
Be, Mg, Al, Si, Sc, Ti, V, Cr, Cu, Zn, Ge, Y, N
b, Mo, Pd, Hf, Ta, W, Pt, Au, Pb, Bi, La, Ce, P
Even when r, Nd, and Eu were used alone to form the protective layer, a magnetic disk having a coercive force similar to that of Example 1 was obtained regardless of the types of these constituent materials.
【0018】〔実施例4〕保護層の構成材料としてZrに
代えて以下に述べるものを用いるようにしたこと以外
は、実施例1と同様の方法で磁気ディスクをそれぞれ作
製し、各磁気ディスクの保磁力を測定した。その結果、
NiP 、SiN 、SiC 、TiC 、ZnSe、及びZnS をそれぞれ単
独で用いて保護層を形成した場合にも、これらの構成材
料の種類によらず、実施例1と同様の保磁力を有する磁
気ディスクが得られた。[Embodiment 4] Magnetic disks were manufactured in the same manner as in Embodiment 1 except that the following constituent materials were used instead of Zr as the constituent material of the protective layer. The coercive force was measured. as a result,
Even when the protective layer is formed by using NiP, SiN, SiC, TiC, ZnSe, and ZnS independently, a magnetic disk having a coercive force similar to that of Example 1 is obtained regardless of the types of the constituent materials. Was obtained.
【0019】〔実施例5〕Co62.5Ni30Cr7.5 層に代えて
以下に述べる磁性体層を形成するようにしたこと以外
は、実施例1と同様の方法で磁気ディスクをそれぞれ作
製し、各磁気ディスクの保磁力を測定した。その結果、
CoCrTa層、CoCr層、CoNiPt層、CoCrPt層、及びγ−Fe2O
3 層をそれぞれ形成した場合にも、 Cを用いて保護層を
形成したものに比べて、高い保磁力を有する磁気ディス
クが得られた。Example 5 A magnetic disk was produced in the same manner as in Example 1 except that the magnetic layer described below was formed instead of the Co 62.5 Ni 30 Cr 7.5 layer. The coercive force of the magnetic disk was measured. as a result,
CoCrTa layer, CoCr layer, CoNiPt layer, CoCrPt layer, and γ-Fe 2 O
Even when each of the three layers was formed, a magnetic disk having a higher coercive force was obtained as compared with the case where the protective layer was formed using C.
【0020】[0020]
【発明の効果】以上述べたように、この発明による磁気
ディスクの製造方法によると、基板温度 250℃以上にて
基板の上に、磁性体層、保護層を順にスパッタ法により
形成して磁気ディスクを製造するに際し、保護層の構成
材料として前記基板温度において磁性体層中へ拡散しな
い非拡散性元素を用いるようにしたものであるから、磁
性体層中の結晶粒界に基板温度を高めることによって偏
析が促進されるCrの偏析量が、保護層を構成する非拡散
性元素によって減少するということがなく、高い保磁力
を有する磁気ディスクが得られる。As described above, according to the magnetic disk manufacturing method of the present invention, a magnetic layer and a protective layer are sequentially formed on a substrate by a sputtering method at a substrate temperature of 250 ° C. or higher. In manufacturing the above, since a non-diffusible element that does not diffuse into the magnetic layer at the substrate temperature is used as the constituent material of the protective layer, it is necessary to increase the substrate temperature at the crystal grain boundary in the magnetic layer. The segregation amount of Cr, which promotes segregation, is not reduced by the non-diffusible element forming the protective layer, and a magnetic disk having a high coercive force can be obtained.
【図1】この発明の一実施例により得られた磁気ディス
クに関する基板温度と保磁力との関係を示す図である。FIG. 1 is a diagram showing a relationship between a substrate temperature and a coercive force of a magnetic disk obtained according to an embodiment of the present invention.
Claims (1)
性体層、保護層を順にスパッタ法により形成して磁気デ
ィスクを製造する方法において、前記保護層の構成材料
として前記基板温度において前記磁性体層中へ拡散しな
い非拡散性元素を用いることを特徴とする磁気ディスク
の製造方法。1. A method for manufacturing a magnetic disk by forming a magnetic layer and a protective layer on a substrate in this order by a sputtering method at a substrate temperature of 250 ° C. or higher, and at the substrate temperature as a constituent material of the protective layer. A method for manufacturing a magnetic disk, comprising using a non-diffusible element that does not diffuse into the magnetic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12769392A JPH05325183A (en) | 1992-05-20 | 1992-05-20 | Manufacture of magnetic disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12769392A JPH05325183A (en) | 1992-05-20 | 1992-05-20 | Manufacture of magnetic disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05325183A true JPH05325183A (en) | 1993-12-10 |
Family
ID=14966371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12769392A Withdrawn JPH05325183A (en) | 1992-05-20 | 1992-05-20 | Manufacture of magnetic disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05325183A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759617A (en) * | 1996-05-20 | 1998-06-02 | Fujitsu Limited | Production process for a hard disk magnetic recording medium |
-
1992
- 1992-05-20 JP JP12769392A patent/JPH05325183A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759617A (en) * | 1996-05-20 | 1998-06-02 | Fujitsu Limited | Production process for a hard disk magnetic recording medium |
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