JPH0533131A - Sputtering system - Google Patents

Abstract

PURPOSE:To prevent the variations in the quality of a metallic coating film by accurately detecting the temp. of a semiconductor wafer and controlling the wafer temp. CONSTITUTION:A temp. sensor 8 for detecting the temp. of a wafer 11 is arranged in a carrying chamber 12 isolated from a sputtering chamber 1. Consequently, the influence of the heat radiated and transmitted from the wall of the sputtering chamber 1 provided with a heater 2 is eliminated, the wafer temp. is accurately measured, and the wafer is kept at a required temp. by a control circuit 9.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus equipped with a load lock chamber for carrying a wafer which is a semiconductor substrate and loading the wafer in the sputtering chamber.

[0002]

2. Description of the Related Art FIG. 2 is a schematic diagram of a conventional sputtering apparatus. Conventionally, this type of sputtering apparatus is mounted through a load lock chamber 15, which holds a wafer in advance and maintains a vacuum state by a vacuum pump 13, and a load lock chamber 15 and a transfer chamber 12, as shown in FIG. Sputtering chamber 1
And a control circuit 9 for controlling the heater 2 by detecting the temperature of the wafer by the temperature sensor 8 of the sputtering chamber 1.
And a vacuum pump 10 for evacuating the sputtering chamber 1 and a target 5 for sputtering a metal by applying a voltage from a power supply unit 6 and performing plasma discharge.

Next, the operation of this sputtering apparatus will be described. First, the load lock chamber 15 absorbs the wafer, and the vacuum pump 13 evacuates the wafer to a predetermined degree of vacuum. Next, the wafer is transferred to the sputtering chamber 1 and the transfer chamber 12 that have been evacuated in advance, and the wafer 11 is attached to the heat conductive plate on the negative electrode side. Next, an inert gas is introduced into the sputtering chamber 1 and a voltage is applied to the target 5 to cause plasma discharge. This causes the target 5 to perform metal sputtering and form a metal film on the heated wafer.

Next, the wafer 11 on which the metal film is formed
Are stored in the load lock chamber 15 through the transfer chamber 12. Next, the load lock chamber 15 and the transfer chamber 12
The valve in between is closed, the vacuum in the load lock chamber 15 is released, and the wafer is taken out from the load lock chamber 15. In this way, a series of operations are performed to form a metal film on a wafer which is a semiconductor substrate without forming an oxide film.

[0005]

In this conventional sputtering apparatus, since the temperature sensor for measuring the temperature of the wafer and the heater for heating are arranged in the sputtering chamber, the sputtering chamber itself is heated by the heater. , The temperature sensor is affected by radiant heat, conductive heat, etc. from the heated wall of this sputtering chamber,
There is a problem that the temperature of the wafer cannot be accurately grasped, the temperature control of the wafer becomes difficult, and the film quality of the metal film deposited on the wafer changes.

It is an object of the present invention to provide a sputtering apparatus in which the temperature of a semiconductor wafer is accurately detected and the temperature is controlled so as to form a metal film having no fluctuation in film quality in order to solve the above problem.

[0007]

A sputtering apparatus according to the present invention comprises a load lock chamber for accommodating a semiconductor substrate in advance and evacuating the chamber, and a sputtering chamber mounted via the load lock chamber and a transfer chamber evacuated. In a sputtering apparatus including a heater for heating the semiconductor substrate housed in a sputtering chamber and a target for applying a voltage to sputter metal on the semiconductor substrate, a temperature sensor for detecting the temperature of the semiconductor substrate is the sputtering device. It is characterized in that it is attached to the transfer chamber which is shielded from the temperature of the wall of the chamber, and the heater is controlled by the output value of this temperature sensor.

[0008]

The present invention will be described below with reference to the drawings.

FIG. 1 is a schematic view showing an embodiment of the sputtering apparatus of the present invention. This sputtering device
The temperature sensor 8 for detecting the temperature of the wafer is arranged in the transfer chamber 12 separated from the sputtering chamber 1. Other than that, it is the same as the conventional example. Radiant heat from the sputtering chamber 1 whose walls are heated in this way
The influence of conduction heat is eliminated and the wafer temperature can be measured accurately. Therefore, the control circuit 9 that controls the heater 2 based on the output value of the temperature sensor 8 can control the heater 2 and maintain the wafer 11 at a required temperature.

[0010]

As described above, according to the present invention, the temperature sensor for measuring the temperature of the wafer is installed in the vacuum chamber which is separated from the heated sputtering chamber. A sputtering system that accurately grasps the temperature of the wafer during continuous processing without being affected by changes and can control it to a certain arbitrary temperature, and that forms the metal film to be deposited with good reproducibility It has the effect of being obtained.

[Brief description of drawings]

FIG. 1 is a schematic view of a sputtering apparatus showing an embodiment of the present invention.

FIG. 2 is a schematic diagram of a sputtering device showing a conventional example.

[Explanation of symbols]

 1 Sputtering Chamber 2 Heater 3 Inert Gas Inlet 5 Target 6 Power Supply 8 Temperature Sensor 9 Control Circuit 10, 13 Vacuum Pump 11 Wafer 12 Transfer Chamber

Claims (1)

Claim: What is claimed is: 1. A semiconductor device is housed in advance, and a load lock chamber for evacuating, a sputtering chamber attached via the load lock chamber and a transfer chamber evacuated, and a sputtering chamber are housed. In a sputtering apparatus comprising a heater for heating the semiconductor substrate and a target for applying a voltage to sputter metal on the semiconductor substrate, a temperature sensor for detecting the temperature of the semiconductor substrate is a temperature of a wall of the sputtering chamber. A sputtering apparatus, which is attached to the transfer chamber that is shut off from the above, and controls the heater by the output value of the temperature sensor.