JPH05345970A - Vacuum deposition device - Google Patents

Abstract

PURPOSE:To prevent flakes from entering crucibles and to obtain a high quality thin film. CONSTITUTION:Plural crucibles 7 contg. starting materials 8 to be evaporated by heating are arranged in the lower part of a growth chamber 4 to fabricate a vacuum deposition device. The open face of each of the crucibles 7 is positioned at the outside of a line extended downward from the surface 3A of the vertical wall of the growth chamber 4. Even when flakes stick to the surface 3A of the vertical wall and flow down, they do not enter the crucibles 7 and mixing with the starting materials 8 in the crucibles 7 is prevented.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a vacuum vapor deposition apparatus.

[0002]

2. Description of the Related Art A vacuum vapor deposition apparatus such as a molecular beam epitaxy apparatus heats and evaporates a raw material under an ultrahigh vacuum to grow a single crystal thin film on the surface of a substrate. An example thereof will be described with reference to FIG. Reference numeral 1 denotes a chamber made of stainless steel or the like, and inside thereof, a growth chamber 4 surrounded by a shroud 3 in which liquid nitrogen 2 is enclosed is formed.

A molecular beam source cell 5 is attached to the case 1 by an attachment port 6. The molecular beam source cell 5 is equipped with a crucible 7, into which a raw material 8 is placed and heated by a suitable heating source to evaporate. Reference numeral 9 denotes a substrate on which the evaporated material of the raw material 8 is formed as a single crystal thin film,
Is a holding mechanism for holding.

Usually, a plurality of molecular beam source cells 5 are prepared, and each crucible 7 contains a different raw material 8. Further, in order to easily attach the evaporation material of the raw material 8 to the surface of the substrate 9, the substrate 9 is installed above the growth chamber 4, and the crucible 7 is located at the lower corner of the growth chamber 4 and faces the substrate 9. It is installed so that it opens.

FIG. 2 shows the installation state of the molecular beam source cell 5 in the conventional apparatus of this type. Since the crucible 7 is installed in the lower corner of the growth chamber 4 as described above, the positional relationship is such that the opening surface of the crucible 7 exists immediately below the vertical wall surface 3A of the shroud 3.

By the way, all the vaporized materials of each raw material 8 are converted into the substrate 9
Not attached to the surface of the shroud, but a part thereof also attaches to the wall surface 3A of the shroud 3 as flakes. The flakes may flow down along the wall surface 3A as shown by an arrow and flow into the crucible 7 of the molecular beam source cell 5 located immediately below the wall surface 3A.

There is no problem as long as the flakes are the same raw material as in the crucible, but a plurality of molecular beam source cells 5 having different raw materials are installed in the same growth chamber as described above. Of flakes may flow into the crucible 7 of the molecular beam source cell 5. Therefore, when the raw material in the crucible is heated, it becomes an impurity and forms a thin film on the substrate.

[0008]

SUMMARY OF THE INVENTION It is an object of the present invention to prevent impurities from being mixed due to the flow of flakes and to obtain a thin film of good quality.

[0009]

According to the present invention, the crucible is installed in the lower corner of the growth chamber, and the opening surface of the crucible is an extension line extending downward from the vertical wall surface of the growth chamber located above the crucible. On the other hand, it is characterized in that it is configured to be positioned toward the outside of the growth chamber.

[0010]

[Function] When flakes adhering to the vertical wall flow down along the wall, the opening surface of the crucible will be located outside the growth chamber from the extension line that extends downward of the vertical wall, and the flakes will form in the crucible. It flows out from the opening surface and does not enter the inside of the crucible. This prevents flakes from entering the crucible as a blunt substance.

[0011]

Embodiment An embodiment of the present invention will be described with reference to FIG. According to the present invention, when the crucible 7 is installed in the growth chamber 4, the opening surface of the crucible 7 has a growth chamber 4 with respect to a downward extension line of the vertical wall surface 3A of the growth chamber 4 located above the crucible 7. It is configured to be located toward the outside of the.

According to this structure, even if flakes adhere to the vertical wall surface 3A and flow down along the vertical wall surface 3A, the opening surface of the crucible 7 exists outside the downward direction. , Flakes do not enter crucible 7. That is, the raw material 8 in the crucible 7
This will surely prevent the flakes from being mixed in.

The structure shown in the drawing is an example in which the present invention is applied to a molecular beam epitaxy apparatus. However, the present invention is not limited to this apparatus but is a vacuum vapor deposition apparatus, that is, a vacuum for heating and evaporating a raw material using a crucible. It goes without saying that it is also applied to a vapor deposition device.

[0014]

As described above in detail, according to the present invention, when vacuum-depositing a crucible containing different raw materials, it is possible to reliably prevent the inclusion of flakes due to the evaporation of other raw materials. Therefore, it is possible to obtain a vapor-deposited thin film of high quality.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

FIG. 2 is a partial cross-sectional view of a conventional example.

[Explanation of symbols]

 3 Shroud 3A Vertical wall 4 Growth chamber 7 Crucible 8 Raw material 9 Substrate

Claims (1)

[Claims] 1. A vacuum vapor deposition apparatus having a growth chamber having a substrate installed on the upper side, an opening facing the substrate below, and a plurality of crucibles containing a material to be heated and vaporized therein, wherein the crucible is Installed in the lower corner of the growth chamber, the opening surface of the crucible, with respect to the downward extension of the vertical wall of the growth chamber located above the crucible, toward the outside of the growth chamber A vacuum vapor deposition device that is positioned.