JPH053736B2 - - Google Patents
Info
- Publication number
- JPH053736B2 JPH053736B2 JP61108903A JP10890386A JPH053736B2 JP H053736 B2 JPH053736 B2 JP H053736B2 JP 61108903 A JP61108903 A JP 61108903A JP 10890386 A JP10890386 A JP 10890386A JP H053736 B2 JPH053736 B2 JP H053736B2
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- transmission window
- plasma
- window
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔概要〕
マイクロ波透過窓をマイクロ波の電場に平行、
または垂直に設けられたマイクロ波プラズマ処理
装置において、窓から処理室内の被処理体に向か
つてプラズマが急激に減衰するための対策とし
て、とくに後者の場合は構造的に被処理体とマイ
クロ波透過窓の間隔を小さくできる。そのため、
窓材がプラズマにより熱せられたときの輻射によ
り処理分布をわるくし、さらに極端な場合はデバ
イス損傷をひき起こすこともあるため、冷却気体
により窓を効率的に冷却するようにした装置を提
起する。[Detailed Description of the Invention] [Summary] A microwave transmission window is placed parallel to the microwave electric field.
Alternatively, in a vertically installed microwave plasma processing apparatus, as a countermeasure against the rapid attenuation of plasma as it approaches the object to be processed from the window in the processing chamber, especially in the latter case, the structure is such that the microwave does not pass between the object to be processed and the object to be processed. You can reduce the spacing between windows. Therefore,
Since radiation when the window material is heated by plasma can impair the treatment distribution and, in extreme cases, even cause damage to the device, we propose a device that efficiently cools the window with cooling gas. .
本発明はマイクロ波透過窓に空冷手段を設けた
マイクロ波プラズマ処理装置に関する。
The present invention relates to a microwave plasma processing apparatus in which a microwave transmission window is provided with air cooling means.
半導体装置の製造において、素子の微細化にと
もないプロセスのドライ化が進み、その1つにマ
イクロ波プラズマ処理があり、エツチングやレジ
ストのアツシング(灰化して剥離すること)に多
用されている。 In the manufacture of semiconductor devices, as elements become smaller, processes are becoming increasingly dry, and microwave plasma processing is one such process, which is frequently used for etching and resist ashing (ashing and peeling).
マイクロ波プラズマ処理装置はマグネトロンに
より発生した2.45GHzのマイクロ波を導波管で処
理室に導き、プラズマを発生させて、被処理体の
処理を行う装置である。 A microwave plasma processing device is a device that guides 2.45GHz microwaves generated by a magnetron into a processing chamber through a waveguide, generates plasma, and processes the object to be processed.
この際、マイクロ波の電場に平行(マイクロ波
の進行に垂直)にマイクロ波透過窓を設ける垂直
入射方式が一般的であるが、本発明者は特願昭59
−252909号明細書において、マイクロ波の電場に
垂直(マイクロ波の進行方向に平行)にマイクロ
波透過窓を設ける水平入射方式を提起した。 At this time, a vertical incidence method is generally used in which a microwave transmission window is provided parallel to the electric field of the microwave (perpendicular to the propagation of the microwave).
In the specification of No. 252909, a horizontal incidence method was proposed in which a microwave transmission window is provided perpendicular to the microwave electric field (parallel to the direction of microwave propagation).
垂直入射方式においては、マイクロ波を処理室
に導入するとき、導波管側の大気と窓材との界面
と、窓材と処理室側のプラズマとの界面で反射
し、しかも処理室内は真空からプラズマまでイン
ピーダンスが大きく変化し、整合のとれた糸をつ
くることは困難である。また、マイクロ波が透過
窓より処理室内部にむかつて急速に減衰するた
め、被処理全体を均一にプラズマ処理することは
難しい。 In the vertical incidence method, when microwaves are introduced into the processing chamber, they are reflected at the interface between the atmosphere on the waveguide side and the window material, and the interface between the window material and the plasma on the processing chamber side, and the processing chamber is vacuumed. The impedance varies greatly from the plasma to the plasma, making it difficult to create well-matched threads. Further, since the microwave is rapidly attenuated as it enters the processing chamber through the transmission window, it is difficult to uniformly plasma-process the entire object to be processed.
これに対して、水平入射方式においては、マイ
クロ波を発生する電場に垂直方向に絶縁物(窓
材)を置くため、マイクロ波が処理室に効率よく
導入され、かつ、被処理体全体を均一にプラズマ
に接するようにできる。しかしながら、透過窓の
窓材がプラズマにより熱せられたときの輻射によ
り処理分布をわるくし、さらに極端な場合はデバ
イス損傷をひき起こすこともあるため、透過窓の
冷却対策が望まれている。 In contrast, in the horizontal incidence method, an insulator (window material) is placed perpendicular to the electric field that generates microwaves, so microwaves are efficiently introduced into the processing chamber and uniformly spread over the entire object to be processed. can be brought into contact with plasma. However, when the window material of the transmission window is heated by plasma, radiation can impair the processing distribution and, in extreme cases, may cause damage to the device, so measures to cool the transmission window are desired.
従つて、本発明で窓材の輻射熱の影響を受けや
すい水平入射方式を例にとつて説明する。 Therefore, in the present invention, the horizontal incidence method, which is easily affected by the radiant heat of the window material, will be explained as an example.
つぎに、比較のために導波管内、あるいはガス
活性化室を冷却する本発明の類似例について説明
する。 Next, for comparison, a similar example of the present invention in which the inside of the waveguide or the gas activation chamber is cooled will be described.
特開昭59−177931
本発名者によりこの明細書に開示された装置
は、垂直入射方式において導波管内に冷却ガス
を流すことにより、マグネトロン、およびアン
テナの使用寿命の短縮を防止するようにしたも
のである。 JP-A-59-177931 The device disclosed in this specification by the present inventor is designed to prevent shortening of the service life of a magnetron and an antenna by flowing a cooling gas into a waveguide in a vertical incidence system. This is what I did.
実公昭56−5309、特開昭53−60882
導波管を貫通するガス活性化室を二重構造と
して、内部筒を活性ガス通過領域とし、外部筒
と内部筒との間隙に冷却ガス、または液体を送
り込み、内部筒を冷却して、石英製の内部筒が
エツチングされるのを防止する。 Utility Model Publication No. 56-5309, JP-A No. 53-60882 The gas activation chamber passing through the waveguide has a double structure, with the inner cylinder serving as the active gas passage region, and cooling gas or A liquid is pumped in to cool the inner cylinder to prevent etching of the quartz inner cylinder.
この場合は、ガス活性化室で生成した活性ガ
スを処理室に導入する方式である。 In this case, the activated gas generated in the gas activation chamber is introduced into the processing chamber.
第4図は従来例によるマイクロ波透過窓を電場
に垂直方向に設けたタイプのマイクロ波プラズマ
処理装置の断面図である。
FIG. 4 is a sectional view of a conventional microwave plasma processing apparatus in which a microwave transmission window is provided in a direction perpendicular to the electric field.
図において、1は導波管、2は従来の手段によ
つて発生された矢印方向に進むマイクロ波、3は
石英、またはセラミツクよりなるマイクロ波透過
窓、4は被処理体、5は被処理体を載置するステ
ージ、6は通常の排気系(図示しない)に接続さ
れた排気口、7は処理用の反応(エツチング)ガ
ス導入口である。 In the figure, 1 is a waveguide, 2 is a microwave generated by conventional means and propagates in the direction of the arrow, 3 is a microwave transmission window made of quartz or ceramic, 4 is an object to be processed, and 5 is a to be processed. A stage on which the body is placed, 6 an exhaust port connected to a normal exhaust system (not shown), and 7 a reaction (etching) gas inlet for processing.
図示されるように、マイクロ波透過窓は電場に
垂直に設けられているため、マイクロ波のモード
は乱れることなく、処理室に効率よく吸収される
ので、整合を容易にとり得ることが確認された。 As shown in the figure, since the microwave transmission window is installed perpendicular to the electric field, the microwave mode is efficiently absorbed into the processing chamber without being disturbed, so it was confirmed that matching could be achieved easily. .
本発明者の実測によると、O2プラズマにおい
て、1 Torrの圧力で、マイクロ波の反射は整
合なしで30%、整合をとつて5%と極めて少な
く、高速処理が可能となつた。 According to actual measurements by the present inventor, in O 2 plasma at a pressure of 1 Torr, the reflection of microwaves is extremely small, 30% without matching and 5% with matching, making high-speed processing possible.
しかしながら、マイクロ波透過窓3と被処理体
4との距離は処理室内のプラズマの減衰により、
3〜20mm程度にしなければならず、そのため、マ
イクロ波透過窓3の窓材がプラズマにより熱せら
れて300〜500℃になり、これよりの輻射により被
処理体4の処理分布をわるくし、さらに極端な場
合はデバイス損傷をひき起こすこともある。 However, the distance between the microwave transmission window 3 and the object to be processed 4 is reduced due to the attenuation of the plasma in the processing chamber.
Therefore, the window material of the microwave transmission window 3 is heated by the plasma to a temperature of 300 to 500°C, and the radiation from this deteriorates the processing distribution of the object to be processed 4. In extreme cases, it may cause device damage.
従来のマイクロ波透過窓を電場に垂直方向に設
けたタイプのマイクロ波プラズマ処理装置におい
ては、窓材の輻射熱により被処理体の処理分布が
わるく、さらに極端な場合はデバイス損傷をひき
起こす。
In a conventional microwave plasma processing apparatus in which a microwave transmission window is provided in a direction perpendicular to an electric field, radiant heat from the window material deteriorates the processing distribution of the object to be processed, and in extreme cases may cause damage to the device.
上記問題点は本発明により、管内が大気圧とな
つているマイクロ波導波管と、減圧状態となるマ
イクロ波プラズマ処理室との間にマイクロ波透過
窓が配置される構成において、マイクロ波導波管
側からマイクロ波透過窓の中央部に冷却気体を吹
き付ける冷却手段が設けられていることを特徴と
するマイクロ波プラズマ処理装置によつて解決さ
れる。
The above problem can be solved by the present invention, in which a microwave transmission window is arranged between a microwave waveguide whose inside is at atmospheric pressure and a microwave plasma processing chamber which is in a reduced pressure state. The problem is solved by a microwave plasma processing apparatus characterized in that a cooling means is provided for blowing cooling gas from the side into the center of the microwave transmission window.
本発明は、マイクロ波透過窓を空冷する際に、
冷却気体が窓の中央部に吹き出されるようにして
冷却効果を高くする。
In the present invention, when air cooling a microwave transmission window,
To enhance the cooling effect by blowing out cooling gas to the center of the window.
第2図の1,2は本発明の原理を説明する実験
に使用したマイクロ波プラズマ装置の断面図と平
面図である。 1 and 2 in FIG. 2 are a sectional view and a plan view of a microwave plasma apparatus used in an experiment to explain the principle of the present invention.
図において、A点は冷却気体を導波管内より排
出する位置、B点は窓の中央部、C点は冷却気体
を窓に吹き付ける位置で、B点に関しA点はC点
と点対称の関係にある。 In the figure, point A is the position where the cooling gas is discharged from inside the waveguide, point B is the center of the window, and point C is the position where the cooling gas is blown onto the window. With respect to point B, point A is symmetrical with point C. It is in.
この場合の冷却効果をつぎの第3図に示す。 The cooling effect in this case is shown in FIG. 3 below.
第3図はプラズマ導入後の経過時間に対する各
位置の温度上昇を測定した図である。 FIG. 3 is a diagram in which the temperature rise at each position was measured with respect to the elapsed time after plasma introduction.
図において、 空冷なしでは、B点が最高温度になる。 In the figure, Without air cooling, point B would be the highest temperature.
温度上昇の飽和近傍における、空冷ありの曲
線と、空冷なしの曲線との差で表される冷却の
程度はB点、C点とも同程度の約150℃である。 The degree of cooling expressed by the difference between the curve with air cooling and the curve without air cooling near the saturation of the temperature rise is about 150° C., which is the same at both points B and C.
同様な冷却の程度はA点で約100℃で、B点、
C点より冷却され難い。 Similar degrees of cooling are approximately 100°C at point A, and at point B,
It is difficult to cool down from point C.
以上より、冷却気体を窓の中央部に吹きつ付け
るのがもつとも有効であると考えられる。 From the above, it is considered to be effective to blow cooling gas directly into the center of the window.
第1図は本発明によるマイクロ波透過窓を電場
に垂直方向に設けたタイプのマイクロ波プラズマ
処理装置の断面図である。
FIG. 1 is a sectional view of a type of microwave plasma processing apparatus in which a microwave transmission window is provided in a direction perpendicular to an electric field according to the present invention.
図において、1は導波管、2は従来の手段によ
つて発生され矢印方向に進むマイクロ波、3は石
英、またはセラミツクよりなるマイクロ波透過
窓、4は被処理体、5は被処理体を載置するステ
ージ、6は従来の排気系に接続された排気口、7
は処理用の反応ガス導入口で、以上は従来例と全
く同様である。 In the figure, 1 is a waveguide, 2 is a microwave generated by conventional means and propagates in the direction of the arrow, 3 is a microwave transmission window made of quartz or ceramic, 4 is an object to be processed, and 5 is an object to be processed. 6 is an exhaust port connected to a conventional exhaust system, 7 is a stage on which the
is a reaction gas inlet for processing, and the above is completely the same as in the conventional example.
本発明は、マイクロ波透過窓3の中央部B点に
冷却気体が吹き付けられる位置に対応して、導波
管1に送風機8を設ける。また、マイクロ波透過
窓3の周辺部、またはその外側に、例えばA点、
C点に対応して、導波管1に排気口、または排風
機9,10を設ける。 In the present invention, a blower 8 is provided in the waveguide 1 corresponding to the position where the cooling gas is blown onto the central part B of the microwave transmission window 3. Further, for example, point A,
An exhaust port or exhaust fans 9 and 10 are provided in the waveguide 1 corresponding to point C.
送風機8、排気口、または排風機9,10は電
磁的に遮蔽して導波管1に取り付ける。 The blower 8, the exhaust port, or the exhaust fans 9, 10 are attached to the waveguide 1 while being electromagnetically shielded.
以上の構造を有する装置により、効率よくマイ
クロ波透過窓を冷却できる。 With the device having the above structure, the microwave transmission window can be efficiently cooled.
実施例では、効果の大きい水平入射方式の装置
について説明したが、垂直入射方式の装置に適用
しても、本発明の要旨は変わらない。 In the embodiment, a horizontal incidence type device which is highly effective has been described, but the gist of the present invention does not change even if it is applied to a vertical incidence type device.
以上詳細に説明したように本発明によるマイク
ロ波プラズマ処理装置においては、窓材の輻射熱
により被処理体の処理分布はわるくなることを抑
制し、さらに、デバイス損傷をひき起こすことを
防止する。
As described in detail above, in the microwave plasma processing apparatus according to the present invention, the processing distribution of the object to be processed is prevented from becoming poor due to the radiant heat of the window material, and furthermore, damage to the device is prevented.
第1図は本発明によるマイクロ波透過窓を電場
に垂直方向に設けたタイプのマイクロ波プラズマ
処理装置の断面図、第2図は1,2は本発明の原
理を説明する実験に使用したマイクロ波プラズマ
装置の断面図と平面図、第3図はプラズマ導入後
の経過時間に対する各位置の温度上昇を測定した
図、第4図は従来例によるマイクロ波透過窓を電
場に垂直方向に設けたタイプのマイクロ波プラズ
マ処理装置の断面図である。
図において、1は導波管、2はマイクロ波、3
はマイクロ波透過窓、4は被処理体、5はステー
ジ、6は排気口、7はガス導入口、8は送風機、
9,10は排気口、または排風機である。
Fig. 1 is a cross-sectional view of a microwave plasma processing apparatus according to the present invention in which a microwave transmission window is provided perpendicular to the electric field, and Fig. 2 is a cross-sectional view of a microwave plasma processing apparatus according to the present invention in which a microwave transmission window is provided in a direction perpendicular to the electric field. A cross-sectional view and a plan view of the wave plasma device. Figure 3 is a diagram showing the temperature rise at each location measured over the elapsed time after plasma introduction. Figure 4 shows a conventional microwave transmission window installed perpendicular to the electric field. 1 is a sectional view of a type of microwave plasma processing apparatus. In the figure, 1 is a waveguide, 2 is a microwave, and 3 is a waveguide.
is a microwave transmission window, 4 is an object to be processed, 5 is a stage, 6 is an exhaust port, 7 is a gas inlet port, 8 is a blower,
9 and 10 are exhaust ports or exhaust fans.
Claims (1)
と、減圧状態となるマイクロ波プラズマ処理室と
の間にマイクロ波透過窓が配置される構成におい
て、マイクロ波導波管側からマイクロ波透過窓の
中央部に冷却気体を吹き付ける冷却手段が設けら
れていることを特徴とするマイクロ波プラズマ処
理装置。1. In a configuration in which a microwave transmission window is placed between a microwave conductive tube whose interior is at atmospheric pressure and a microwave plasma processing chamber where the pressure is reduced, the microwave transmission window is opened from the microwave waveguide side. A microwave plasma processing apparatus characterized in that a cooling means for spraying cooling gas is provided in the central part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10890386A JPS62264623A (en) | 1986-05-13 | 1986-05-13 | Microwave plasma processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10890386A JPS62264623A (en) | 1986-05-13 | 1986-05-13 | Microwave plasma processor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62264623A JPS62264623A (en) | 1987-11-17 |
| JPH053736B2 true JPH053736B2 (en) | 1993-01-18 |
Family
ID=14496552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10890386A Granted JPS62264623A (en) | 1986-05-13 | 1986-05-13 | Microwave plasma processor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62264623A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006294422A (en) * | 2005-04-11 | 2006-10-26 | Tokyo Electron Ltd | Plasma processing apparatus, slot antenna, and plasma processing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0775198B2 (en) * | 1983-03-28 | 1995-08-09 | 富士通株式会社 | Microwave processing equipment |
| JPS6025234A (en) * | 1983-07-21 | 1985-02-08 | Fujitsu Ltd | Microwave plasma processor |
-
1986
- 1986-05-13 JP JP10890386A patent/JPS62264623A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62264623A (en) | 1987-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |