JPH053959U - Semiconductor pressure sensor - Google Patents

Abstract

(57) [Abstract] [Purpose] To realize a semiconductor pressure sensor with good temperature characteristics. A pressure sensor chip made of a semiconductor, a recess forming a diaphragm on the sensor chip, a strain detecting element provided on the diaphragm, and a substrate having one side bonded to the sensor chip and forming a recess and a reference chamber. A semiconductor pressure sensor comprising: a temperature chip made of a semiconductor provided on one surface side of the substrate in the vicinity of the pressure sensor chip; and a temperature detection element provided on the temperature chip. It is a semiconductor pressure sensor.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a semiconductor pressure sensor having good characteristics.

[0002]

[Prior Art]

 FIG. 10 is an explanatory diagram of a configuration of a conventional example that is generally used in the past. In the figure, 1 is a sensor chip made of a semiconductor, and 2 is a recess for forming a diaphragm 3 in the sensor chip 1. Reference numeral 4 is a strain detecting element provided on the diaphragm 3. Reference numeral 5 is a substrate made of glass, one surface of which is bonded to the sensor chip 1 and which constitutes the recess 2 and the reference chamber 6. Reference numeral 6 is a temperature detection element provided in the sensor chip 1.

In the above structure, the reference pressure Ps is introduced into the reference chamber 6, and the measurement pressure Pm is applied to the outer surface of the diaphragm 3. Since the output change corresponding to the measurement pressure Pm is obtained from the strain detection element 4, the measurement pressure Pm can be measured. Then, the temperature detection element 6 detects the temperature, and the detected value of the strain detection element 4 is temperature-compensated.

[0004]

[Problems to be solved by the device]

 However, in such a device, although the strain detecting element 4 has an aluminum wire, the temperature detecting element 6 also has an aluminum wire. This aluminum wire is distorted due to a difference in thermal expansion coefficient between the semiconductor of the sensor chip 1 and the aluminum wire due to a change in ambient temperature, which affects the detection value of the strain detecting element 4 and deteriorates the temperature characteristic of the strain detecting element 4. .. Further, the strain generated by the deformation of the diaphragm 3 at the time of pressure measurement is transmitted to the temperature detection element 6, and the output of the temperature detection element 6 changes even though the temperature change is inward.

The present invention solves this problem. An object of the present invention is to provide a semiconductor pressure sensor having good temperature characteristics.

[0006]

[Means for Solving the Problems]

 In order to achieve this object, the present invention has a pressure sensor chip made of a semiconductor, a recess forming a diaphragm in the sensor chip, a strain detecting element provided in the diaphragm, and one surface of the sensor chip bonded to the sensor chip. In a semiconductor pressure sensor comprising a recess and a substrate forming a reference chamber, a temperature chip made of a semiconductor is provided on one surface side of the substrate in proximity to the pressure sensor chip, and a temperature detection provided on the temperature chip. A semiconductor pressure sensor comprising a device and a semiconductor pressure sensor.

[0007]

[Action]

 In the above structure, the reference pressure is introduced into the reference chamber, and the measurement pressure is applied to the outer surface of the diaphragm. Since the output change corresponding to the measurement pressure is obtained from the strain detecting element, the measurement pressure can be measured. Then, the temperature is detected by the temperature detecting element, and the detected value of the strain detecting element is temperature-compensated. Since the temperature detecting element and the strain detecting element are provided separately, there is no adverse effect due to the aluminum wire. Hereinafter, detailed description will be given based on examples.

[0008]

【Example】

 FIG. 1 is an explanatory view of the main configuration of an embodiment of the present invention. In the figure, the same symbols as in FIG. 10 represent the same functions. Only parts different from FIG. 10 will be described below.

Reference numeral 11 is a temperature chip which is provided on one surface side of the substrate 5 close to the pressure sensor chip 1 and is made of a semiconductor. Reference numeral 12 is a temperature detecting element provided in the temperature chip 11. .

In the above configuration, the reference pressure is introduced into the reference chamber, and the measurement pressure is applied to the outer surface of the diaphragm. Since the output change corresponding to the measurement pressure is obtained from the strain detecting element, the measurement pressure can be measured. Then, the temperature is detected by the temperature detecting element, and the detected value of the strain detecting element is temperature-compensated. Since the temperature detecting element and the strain detecting element are provided separately, there is no adverse effect due to the aluminum wire.

As a result, (1) the occurrence of strain of the aluminum wire of the temperature detecting element 6 due to a change in ambient temperature does not affect the detected value of the strain detecting element 4 and does not deteriorate the temperature characteristics of the strain detecting element 4. (2) The strain generated by the deformation of the diaphragm 3 at the time of pressure measurement is not transmitted to the temperature detecting element 6 and the output of the temperature detecting element 6 does not change although the temperature does not change. (3) Since the sensor chip 1 and the temperature sensor 11 are bonded to the same substrate 5, the temperature difference between the sensor chip 1 and the temperature sensor 11 is extremely small.

Therefore, since the temperature detecting element 12 and the strain detecting element 4 are provided separately, there is no adverse effect due to the aluminum wire, and a semiconductor pressure sensor having good temperature characteristics can be obtained.

2 to 5 show an embodiment of manufacturing the device. (1) As shown in FIG. 2, a through hole B having a predetermined shape is formed in a glass plate A by ultrasonic processing using an ultrasonic processing tool C or the like. (2) As shown in FIG. 3, the wafer D having the strain detecting element 4 and the temperature detecting element 12 formed thereon is attached to the glass plate A. (3) As shown in FIG. 4, the glass plate A and the wafer D are anodically bonded E. (4) As shown in FIG. 5, after forming the groove F between the strain detecting element 4 and the temperature detecting element 12, dicing G is performed with a predetermined dimension.

6 to 9 show another manufacturing embodiment of the present device. (1) As shown in FIG. 6, a through hole B having a predetermined shape is formed in a glass plate H by ultrasonic processing using an ultrasonic processing tool C or the like, followed by dicing into individual solids. (2) As shown in FIG. 7, after the wafer I on which the strain detecting element 4 is formed is formed, it is diced into individual solids. (3) As shown in FIG. 8, after forming the wafer J on which the temperature detecting element 12 is formed, it is diced into individual solids. (4) As shown in FIG. 9, the glass plate H and the wafers I and J are anodically bonded K. In this embodiment, since the strain detecting element 4 and the temperature detecting element 12 can be manufactured in separate steps, they can be manufactured easily and at low cost.

[0015]

[Effect of the device]

 As described above, according to the present invention, a pressure sensor chip made of a semiconductor, a concave portion forming a diaphragm on the sensor chip, a strain detecting element provided on the diaphragm, and a concave portion having one surface joined to the sensor chip are formed. In a semiconductor pressure sensor including a substrate that constitutes a reference chamber, a temperature chip made of a semiconductor is provided on one surface side of the substrate in proximity to the pressure sensor chip, and a temperature detection element provided on the temperature chip. A semiconductor pressure sensor characterized in that it is provided is constructed.

As a result, (1) the occurrence of strain in the aluminum wire of the temperature detecting element 6 due to a change in ambient temperature does not affect the detected value of the strain detecting element 4 and does not deteriorate the temperature characteristics of the strain detecting element 4. (2) The strain generated by the deformation of the diaphragm 3 at the time of pressure measurement is not transmitted to the temperature detecting element 6 and the output of the temperature detecting element 6 does not change although the temperature does not change. (3) Since the sensor chip 1 and the temperature sensor 11 are bonded to the same substrate 5, the temperature difference between the sensor chip 1 and the temperature sensor 11 is extremely small.

Therefore, since the temperature detecting element 12 and the strain detecting element 4 are provided separately, there is no adverse effect due to the aluminum wire, and a semiconductor pressure sensor having good temperature characteristics can be obtained. Therefore, according to the present invention, it is possible to realize a semiconductor pressure sensor having good temperature characteristics.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a main part configuration of an embodiment of the present invention.

2 is a production explanatory view of FIG. 1, and is a production drawing of a substrate 5. FIG.

3 is a production explanatory view of FIG. 1, and is a production drawing of a strain detection element 4 and a temperature detection element 12. FIG.

FIG. 4 is a production explanatory view of FIG. 1, showing a glass plate A and a wafer D.
FIG.

5 is a production explanatory diagram of FIG. 1, and is a dicing explanatory diagram. FIG.

6 is a production explanatory view of FIG. 1, and is a production drawing of the glass plate H. FIG.

FIG. 7 is a production explanatory diagram of FIG. 1 and is a production diagram of the wafer-I.

8 is a production explanatory diagram of FIG. 1, and is a production diagram of the wafer-J. FIG.

FIG. 9 is a production explanatory view of FIG. 1, showing a glass plate H and a wafer.
It is an explanatory view of anodic bonding with I and J.

FIG. 10 is an explanatory diagram of a configuration of a conventional example that is generally used in the past. DESCRIPTION OF SYMBOLS 1 ... Sensor chip 2 ... Recessed part 3 ... Diaphragm, 4 ... Strain detection element 5 ... Substrate 6 ... Reference chamber 11 ... Temperature chip 12 ... Temperature detection element

Claims (1)

Claims for utility model registration: 1. A pressure sensor chip made of a semiconductor, a recess for forming a diaphragm on the sensor chip, a strain detecting element provided on the diaphragm, and one side of the sensor chip bonded to the sensor chip. In a semiconductor pressure sensor comprising a concave portion and a substrate forming a reference chamber, a temperature chip made of a semiconductor is provided on one surface side of the substrate in proximity to the pressure sensor chip, and a temperature detection provided on the temperature chip. A semiconductor pressure sensor comprising an element.