JPH0545071B2 - - Google Patents

Info

Publication number
JPH0545071B2
JPH0545071B2 JP60504943A JP50494385A JPH0545071B2 JP H0545071 B2 JPH0545071 B2 JP H0545071B2 JP 60504943 A JP60504943 A JP 60504943A JP 50494385 A JP50494385 A JP 50494385A JP H0545071 B2 JPH0545071 B2 JP H0545071B2
Authority
JP
Japan
Prior art keywords
junction
diode
light
voltage
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60504943A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62500829A (ja
Inventor
Deebitsudo Jon Sutatsuto
Badoori Narayan
Piitaa Manusu Zeitozofu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of JPS62500829A publication Critical patent/JPS62500829A/ja
Publication of JPH0545071B2 publication Critical patent/JPH0545071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP60504943A 1984-11-13 1985-10-24 光検出装置 Granted JPS62500829A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/670,720 US4633092A (en) 1984-11-13 1984-11-13 Light sensing device
US670,720 1991-03-18

Publications (2)

Publication Number Publication Date
JPS62500829A JPS62500829A (ja) 1987-04-02
JPH0545071B2 true JPH0545071B2 (2) 1993-07-08

Family

ID=24691587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60504943A Granted JPS62500829A (ja) 1984-11-13 1985-10-24 光検出装置

Country Status (4)

Country Link
US (1) US4633092A (2)
JP (1) JPS62500829A (2)
KR (1) KR880700474A (2)
WO (1) WO1986003057A1 (2)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02221959A (ja) * 1989-02-23 1990-09-04 Fuji Photo Film Co Ltd ハロゲン化銀カラー写真感光材料
US5017989A (en) * 1989-12-06 1991-05-21 Xerox Corporation Solid state radiation sensor array panel
WO2018236767A2 (en) * 2017-06-20 2018-12-27 Tesoro Scientific, Inc. Light emitting diode (led) test apparatus and method of manufacture

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251064A (2) * 1955-11-04
US3434015A (en) * 1959-02-06 1969-03-18 Texas Instruments Inc Capacitor for miniature electronic circuits or the like
US3772517A (en) * 1972-05-08 1973-11-13 D Smith Detailed photometer
US3945732A (en) * 1973-03-30 1976-03-23 Asahi Kogaku Kogyo Kabushiki Kaisha Light-measuring systems
JPS5846070B2 (ja) * 1979-02-13 1983-10-14 松下電器産業株式会社 固体撮像装置
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
US4285583A (en) * 1979-11-13 1981-08-25 Polaroid Corporation Photometric device
JPS56102169A (en) * 1980-01-18 1981-08-15 Matsushita Electric Ind Co Ltd Solid image pickup device
JPS56103578A (en) * 1980-01-23 1981-08-18 Hitachi Ltd Solid state pickup element
US4420773A (en) * 1980-06-30 1983-12-13 Nippon Kogaku K.K. Electronic photographic camera
JPS5738073A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Solid-state image sensor
EP0066767B1 (en) * 1981-05-25 1990-10-24 Kabushiki Kaisha Toshiba Solid state image sensor

Also Published As

Publication number Publication date
WO1986003057A1 (en) 1986-05-22
JPS62500829A (ja) 1987-04-02
KR880700474A (ko) 1988-03-15
US4633092A (en) 1986-12-30

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