JPH0546660B2 - - Google Patents
Info
- Publication number
- JPH0546660B2 JPH0546660B2 JP62007745A JP774587A JPH0546660B2 JP H0546660 B2 JPH0546660 B2 JP H0546660B2 JP 62007745 A JP62007745 A JP 62007745A JP 774587 A JP774587 A JP 774587A JP H0546660 B2 JPH0546660 B2 JP H0546660B2
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- potential
- metal cylinder
- charged particles
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002245 particle Substances 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 19
- 238000001514 detection method Methods 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 description 7
- 102100023702 C-C motif chemokine 13 Human genes 0.000 description 6
- 101100382872 Homo sapiens CCL13 gene Proteins 0.000 description 6
- 101150018062 mcp4 gene Proteins 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、試料からの荷電粒子検出効率を向上
させた荷電粒子検出装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a charged particle detection device that improves the efficiency of detecting charged particles from a sample.
［従来技術］
マイクロチヤンネルプレート（以後MCPと称
す）は試料から２次電子を対称性良く検出出来
る、磁場の影響を余り受けない等の特性がある
為、電子ビーム測長機等の２次電子検出器として
広く使用されている。[Prior art] A microchannel plate (hereinafter referred to as MCP) has characteristics such as being able to detect secondary electrons from a sample with good symmetry and being less affected by magnetic fields. Widely used as a detector.
第２図はこの様なMCPを例えば電子ビーム測
長機に使用した場合の構成断面図を示すものであ
る。図中１は対物レンズ、２は電子ビーム、３は
基板３ａ及びレジスト３ｂから成る試料、４はそ
の中心部に穴径３〜６mmφ程度の電子ビーム通過
孔（所謂センターホールＡ）を持つMCPである。
該MCP４は試料３からの２次電子を増倍する細
いガラス管束（チヤンネル）４ａと、該チヤンネ
ル４ａによつて増倍された電子を検出するコレク
タ４ｂとが一体として形成されている。５は該セ
ンターホールＡのチヤージアツプを防止する為に
該センターホールを貫通する様に対物レンズ１の
下面に設けられた金属製の筒体である。該筒体は
アース電位に保たれている。６はMCP４の２次
電子入射部Ｂに正の電位（例；＋200V）を掛け
る為の電源である。７はアンプである。 FIG. 2 shows a cross-sectional view of the structure when such an MCP is used, for example, in an electron beam length measuring machine. In the figure, 1 is an objective lens, 2 is an electron beam, 3 is a sample consisting of a substrate 3a and a resist 3b, and 4 is an MCP having an electron beam passage hole (so-called center hole A) with a diameter of about 3 to 6 mmφ in the center. be.
The MCP 4 is integrally formed with a thin glass tube bundle (channel) 4a that multiplies secondary electrons from the sample 3, and a collector 4b that detects the electrons multiplied by the channel 4a. Reference numeral 5 denotes a metal cylinder provided on the lower surface of the objective lens 1 so as to pass through the center hole A in order to prevent the center hole A from being charged up. The cylinder is kept at ground potential. 6 is a power supply for applying a positive potential (eg, +200V) to the secondary electron incident part B of the MCP4. 7 is an amplifier.
この様な電子ビーム測長機において、電子ビー
ム２で試料上を走査すると、該走査により発生し
た試料３からの２次電子はMCP４によつて検出
される。 In such an electron beam length measuring machine, when a sample is scanned with the electron beam 2, secondary electrons from the sample 3 generated by the scanning are detected by the MCP 4.
［発明が解決しようとする問題点］
所で、この様な従来の装置においては、前記金
属製筒体５は接地電位に保たれている為、MCP
４のセンターホールＡ近傍には電界が殆んど存在
しない。その為、該MCP４の２次電子入射部Ｂ
の正の電位が掛けられていても、表面が他の試料
表面と大きな段差のあるコンタクトホール３ｈ付
近からの２次電子を効率良く引上げ捕獲する事が
出来ない。又、引上げられたものの中には対物レ
ンズ１からの漏洩磁場によつてトラツプされる２
次電子もある。その為に、この様なコンタクトホ
ール３ｈの底の部分からの２次電子を効率良く
MCP４に検出出来ないので、該部分の測長が精
度良く行なう事が出来なかつた。又、この様なコ
ンタクトホール部分の観察を行なう場合に、分解
能良く観察する事が出来なかつた。[Problems to be Solved by the Invention] However, in such a conventional device, since the metal cylinder 5 is kept at the ground potential, the MCP
There is almost no electric field near the center hole A of No. 4. Therefore, the secondary electron incident part B of the MCP4
Even if a positive potential is applied, it is not possible to efficiently pull up and capture secondary electrons from the vicinity of the contact hole 3h, where the surface has a large step difference from the other sample surfaces. Also, some of the objects pulled up are trapped by the leakage magnetic field from the objective lens 1.
There are also secondary electrons. Therefore, the secondary electrons from the bottom of the contact hole 3h are efficiently
Since it could not be detected by MCP4, it was not possible to accurately measure the length of that part. Furthermore, when observing such a contact hole portion, it has not been possible to observe with good resolution.
本発明はこの様な問題を解決し、試料からの荷
電粒子の検出効率を向上させた新規な荷電粒子検
出装置を提供することを目的としている。 An object of the present invention is to solve such problems and provide a novel charged particle detection device that improves the efficiency of detecting charged particles from a sample.
［問題点を解決するための手段］
そこで、本発明は、１次荷電粒子線を試料に照
射することにより発生する２次荷電粒子を、その
中心部に金属製筒体が貫通し、２次荷電粒子入射
部に該２次荷電粒子を吸引する電位が掛けられた
マイクロチヤンネルプレートによつて検出する様
に成した荷電粒子検出装置において、前記金属製
筒体に前記２次荷電粒子を反発させる電位を掛け
る様に成した。[Means for Solving the Problems] Therefore, the present invention has a metal cylindrical body that penetrates through the center of the secondary charged particles generated by irradiating a sample with a primary charged particle beam. In a charged particle detection device configured to detect by a microchannel plate having a charged particle entrance part applied with a potential that attracts the secondary charged particles, the secondary charged particles are repelled by the metal cylinder. It was made to apply an electric potential.
［実施例］
第１図は本発明の一実施例の構成断面図であ
る。[Embodiment] FIG. 1 is a sectional view of the configuration of an embodiment of the present invention.
図中、前記第２図にて使用した番号と同じ番号
の付されたものは同一構成要素である。 In the figure, the same components as those used in FIG. 2 are denoted by the same numbers.
該第１図において、８は対物レンズ１と金属製
筒体５を電気的に絶縁する為の絶縁部材、９は該
金属製筒体５に、絶対値が荷電粒子入射部Ｂに掛
けられる正の電位の絶対値より低い負の電位
（例；−50〜−150V）を掛ける為の電源である。
１０は該金属製筒体５と試料３の間に設けられた
筒状の電極である。１１は該筒状電極１０に、絶
対値が荷電粒子入射部Ｂに掛けられる正の電位の
絶対値より低い正の電位（例；＋50〜＋150V）
を掛ける為の電源である。 In FIG. 1, 8 is an insulating member for electrically insulating the objective lens 1 and the metal cylinder 5, and 9 is an insulating member for electrically insulating the metal cylinder 5. This is a power supply for applying a negative potential (eg -50 to -150V) lower than the absolute value of the potential.
10 is a cylindrical electrode provided between the metal cylinder 5 and the sample 3. 11 is a positive potential applied to the cylindrical electrode 10, the absolute value of which is lower than the absolute value of the positive potential applied to the charged particle entrance part B (e.g. +50 to +150V).
It is a power source for hanging.
この様な装置において、電源６によりMCP４
の荷電粒子入射部Ｂに正の電位が印加されている
ので、該荷電粒子入射部と試料３表面の間には正
の電界が発生している。その為、試料からの荷電
粒子は該正の電界より引上げられMCP４に検出
される。又、金属製筒体５に電源９から前記正の
電位（V1）より絶対値の小さい負の電位（V2）
が掛けられている為、光軸方向に向う荷電粒子や
対物レンズ１の漏洩磁場に引込まれ様とする荷電
粒子も該負の電位により反発されるので、コンタ
クトホール３ｈから発生した荷電粒子は、該金属
製筒体の中心方向に行かずに、MCPの荷電粒子
入射部Ｂ方向に行くので、MCPの荷電粒子の検
出効率は極めて良くなる。更に、電源１１から筒
状電極１０にMCPの荷電粒子入射部Ｂに掛けら
れた電位より低い正の電位が掛けられているの
で、光軸付近の試料面上の正の電界強度がその分
増す。その為、試料面からの荷電粒子の引上げ効
率が著しく向上するので、コンタクトホールの如
き試料面の段差から発生した荷電粒子も効率良く
MCP４に検出される様になる。 In such a device, the MCP4 is powered by the power supply 6.
Since a positive potential is applied to the charged particle entrance part B, a positive electric field is generated between the charged particle entrance part and the surface of the sample 3. Therefore, charged particles from the sample are pulled up by the positive electric field and detected by the MCP4. Further, a negative potential (V 2 ) having a smaller absolute value than the positive potential (V 1 ) is applied to the metal cylinder 5 from the power source 9.
is applied, so charged particles heading in the optical axis direction and charged particles that are about to be drawn into the leakage magnetic field of the objective lens 1 are also repelled by the negative potential, so the charged particles generated from the contact hole 3h are Since the charged particles do not go toward the center of the metal cylinder but toward the charged particle entrance part B of the MCP, the MCP's charged particle detection efficiency becomes extremely high. Furthermore, since a positive potential lower than the potential applied to the charged particle entrance part B of the MCP is applied to the cylindrical electrode 10 from the power supply 11, the strength of the positive electric field on the sample surface near the optical axis increases accordingly. . Therefore, the efficiency of pulling charged particles from the sample surface is significantly improved, and charged particles generated from steps on the sample surface such as contact holes can also be efficiently removed.
It will be detected by MCP4.
尚、上記実施例では本発明を電子ビーム測長機
に適用したが、単に試料の２次電子像を表示する
走査電子顕微鏡や、試料にイオンビームを照射し
て、試料よりの２次イオンを検出する装置にも適
用することができる。 In the above embodiments, the present invention was applied to an electron beam length measuring machine, but it is also applicable to a scanning electron microscope that simply displays a secondary electron image of a sample, or to a scanning electron microscope that simply displays a secondary electron image of a sample, or to irradiates the sample with an ion beam to collect secondary ions from the sample. It can also be applied to a detection device.
［発明の効果］
以上詳述した様に本発明によれば、MCPの金
属製筒体に試料からの荷電粒子を反発させる電位
を掛けているので、光軸方向に向う荷電粒子や対
物レンズの漏洩磁場に引込まれ様とする荷電粒子
は該電位により反発され、コンタクトホールから
発生した荷電粒子は、該金属製筒体の中心方向に
行かずに、MCPの荷電粒子入射部方向に行き、
その為、MCPの荷電粒子の検出効率は極めて良
くなる。更に、MCPの荷電粒子入射部と試料間
に新たに電極を設け、該電極に試料からの荷電粒
子を吸引する電位を掛けているので、光軸付近の
試料面上の荷電粒子吸引の為の電界強度がその分
増し、その為、試料面からの荷電粒子の引上げ効
率が著しく向上するので、コンタクトホールの如
き試料面の段差から発生した荷電粒子も効率良く
MCP検出される様になる。その為、コンタクト
ホール部分の測長や観察が高精度（高分解能）に
行なわれる。[Effects of the Invention] As detailed above, according to the present invention, since a potential is applied to the metal cylinder of the MCP to repel charged particles from the sample, charged particles directed toward the optical axis and the objective lens are Charged particles that are about to be drawn into the leakage magnetic field are repelled by the potential, and the charged particles generated from the contact hole do not go toward the center of the metal cylinder, but instead go toward the charged particle entrance part of the MCP.
Therefore, the detection efficiency of MCP for charged particles becomes extremely high. Furthermore, a new electrode is installed between the charged particle entrance part of the MCP and the sample, and a potential that attracts charged particles from the sample is applied to the electrode. The electric field strength increases accordingly, and as a result, the efficiency of pulling charged particles from the sample surface is significantly improved, so charged particles generated from steps on the sample surface such as contact holes can also be efficiently removed.
MCP will be detected. Therefore, length measurement and observation of the contact hole portion can be performed with high precision (high resolution).
第１図は本発明の構成断面図、第２図は従来装
置の構成断面図である。
１……対物レンズ、２……電子線、３……試
料、３ｈ……コンタクトホール、４……MCP、
Ｂ……荷電粒子入射部、５……金属製筒体、６，
９，１１……電源、７……増幅器、８……絶縁部
材、１０……筒状電極。
FIG. 1 is a sectional view of the structure of the present invention, and FIG. 2 is a sectional view of the structure of a conventional device. 1...Objective lens, 2...Electron beam, 3...Sample, 3h...Contact hole, 4...MCP,
B...Charged particle entrance part, 5...Metal cylinder, 6,
9, 11... Power supply, 7... Amplifier, 8... Insulating member, 10... Cylindrical electrode.
Claims (1)
発生する２次荷電粒子を、その中心部に金属製筒
体が貫通し、２次荷電粒子入射部に該２次荷電粒
子を吸引する電位が掛けられたマイクロチヤンネ
ルプレートによつて検出する様に成した荷電粒子
検出装置において、前記金属製筒体に前記２次荷
電粒子を反発させる電位を掛ける様に成した荷電
粒子検出装置。 ２ 前記マイクロチヤンネルプレートの２次荷電
粒子入射部に掛けられる電位の絶対値が前記金属
製筒体に掛けられる電位の絶対値よりも高くされ
た特許請求の範囲第１項記載の荷電粒子検出装
置。 ３ １次荷電粒子線を試料に照射することにより
発生する２次荷電粒子を、その中心部に金属製筒
体が貫通し、２次荷電粒子入射部に該２次荷電粒
子を吸引する電位が掛けられたマイクロチヤンネ
ルプレートによつて検出する様に成した荷電粒子
検出装置において、前記金属製筒体に前記２次荷
電粒子を反発させる電位を掛ける様に成し、且つ
前記金属製筒体と試料面との間に電極を設け、該
電極に、前記２次荷電粒子を吸引する電位を掛け
る様に成した荷電粒子検出装置。 ４ 前記マイクロチヤンネルプレートの２次荷電
粒子入射部に掛けられる電位の絶対値は前記金属
製筒体に掛けられる電位の絶対値及び前記電極に
掛けられる電位の絶対値よりも高くされた特許請
求の範囲第３項記載の荷電粒子検出装置。[Claims] 1. A metal cylinder penetrates through the center of the secondary charged particles generated by irradiating the sample with a primary charged particle beam, and the secondary charged particles are transferred to the secondary charged particle incident area. In a charged particle detection device configured to detect particles using a microchannel plate to which a potential is applied to attract the particles, the charged particles are configured to apply a potential to the metal cylinder to repel the secondary charged particles. Detection device. 2. The charged particle detection device according to claim 1, wherein the absolute value of the potential applied to the secondary charged particle entrance part of the microchannel plate is higher than the absolute value of the potential applied to the metal cylinder. . 3 A metal cylinder passes through the center of the secondary charged particles generated by irradiating the sample with the primary charged particle beam, and a potential that attracts the secondary charged particles is applied to the secondary charged particle entrance part. In a charged particle detection device configured to perform detection using a suspended microchannel plate, the metal cylinder is configured to apply a potential to repel the secondary charged particles, and the metal cylinder and A charged particle detection device comprising an electrode provided between the sample surface and a potential to attract the secondary charged particles applied to the electrode. 4. The absolute value of the potential applied to the secondary charged particle entrance part of the microchannel plate is higher than the absolute value of the potential applied to the metal cylinder and the absolute value of the potential applied to the electrode. The charged particle detection device according to scope 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62007745A JPS63175325A (en) | 1987-01-16 | 1987-01-16 | Charged particle detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62007745A JPS63175325A (en) | 1987-01-16 | 1987-01-16 | Charged particle detecting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63175325A JPS63175325A (en) | 1988-07-19 |
| JPH0546660B2 true JPH0546660B2 (en) | 1993-07-14 |
Family
ID=11674235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62007745A Granted JPS63175325A (en) | 1987-01-16 | 1987-01-16 | Charged particle detecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63175325A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4092280B2 (en) | 2003-10-23 | 2008-05-28 | 株式会社東芝 | Charged beam apparatus and charged particle detection method |
| EP1619495A1 (en) | 2004-07-23 | 2006-01-25 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method and Apparatus for inspecting a specimen surface and use of fluorescent materials |
| JP2008140723A (en) * | 2006-12-05 | 2008-06-19 | Horiba Ltd | Analyzer |
-
1987
- 1987-01-16 JP JP62007745A patent/JPS63175325A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63175325A (en) | 1988-07-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |