JPH0548059A - Production of solid-state image sensor - Google Patents
Production of solid-state image sensorInfo
- Publication number
- JPH0548059A JPH0548059A JP3225090A JP22509091A JPH0548059A JP H0548059 A JPH0548059 A JP H0548059A JP 3225090 A JP3225090 A JP 3225090A JP 22509091 A JP22509091 A JP 22509091A JP H0548059 A JPH0548059 A JP H0548059A
- Authority
- JP
- Japan
- Prior art keywords
- sheet
- wafer
- solid
- state image
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000003384 imaging method Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000000428 dust Substances 0.000 abstract description 4
- 238000012856 packing Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000002950 deficient Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Dicing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、固体撮像装置の製造方
法に関し、特にウェハを個々のチップに分離する工程を
含む固体撮像装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a solid-state image pickup device, and more particularly to a method for manufacturing a solid-state image pickup device including a step of separating a wafer into individual chips.
【0002】[0002]
【従来の技術】半導体装置のダイシング工程では、ウェ
ハ上のスクライブ線上に沿ってダイシングブレードによ
りウェハに深く切り込み、個々のチップに分割してい
る。而して、固体撮像素子の場合には光電変換部表面に
シリコンの切りクズが付着すると黒キズ等の不良が発生
するので、これを避けるため、ダイシング工程に先立っ
て素子表面をシートで保護することが行われている。2. Description of the Related Art In a semiconductor device dicing process, a wafer is deeply cut along a scribe line on a wafer by a dicing blade to be divided into individual chips. Thus, in the case of a solid-state image sensor, defects such as black scratches will occur if silicon cutting debris adheres to the surface of the photoelectric conversion unit. To avoid this, protect the device surface with a sheet prior to the dicing process. Is being done.
【0003】図4は、従来の製造方法を説明するための
工程断面図である。まず、図4の(a)に示すように、
ウェハ1を裏面シート2上に張り付け、さらに、図4の
(b)に示すように、ウェハ1の表面(素子面)に表面
シート8を張り付ける。次に、図4の(c)に示すよう
に、回転ブレードによりウェハ内に切り込みを入れ、図
4の(d)に示すように、裏面シート2を拡大して、ウ
ェハ1を個々のチップ1aに分割する。4A to 4C are process cross-sectional views for explaining a conventional manufacturing method. First, as shown in FIG.
The wafer 1 is attached to the back sheet 2, and then the top sheet 8 is attached to the front surface (element surface) of the wafer 1 as shown in FIG. Next, as shown in FIG. 4 (c), a cut is made in the wafer by a rotary blade, and as shown in FIG. 4 (d), the back sheet 2 is enlarged to separate the wafer 1 into individual chips 1a. Split into.
【0004】この製造方法によれば、切りクズ等の塵埃
は表面シート8上に付着し、この後シート8を除去する
際に同時に除去されるため、黒キズの発生は抑制され
る。According to this manufacturing method, dust such as cutting scraps adheres to the surface sheet 8 and is removed at the same time when the sheet 8 is removed thereafter, so that the generation of black scratches is suppressed.
【0005】[0005]
【発明が解決しようとする課題】上述した従来の製造方
法では、チップをパッケージ上にマウントした後、ワイ
ヤボンディングを行う前にシートを剥離する必要があ
る。そのため、ワイヤボンディング時に発生する塵埃が
付着しやすく歩留りの向上が困難であった。In the conventional manufacturing method described above, it is necessary to peel off the sheet after mounting the chip on the package and before performing the wire bonding. Therefore, it is difficult to improve the yield because dusts generated during wire bonding tend to adhere.
【0006】また、従来の全面にシートを張り付ける方
法では、表面シートの厚さ分余分にカッティングする必
要があるほかシートが一般的に有機系材料で作成されて
いるため、ブレードがいたみやすいという問題点があっ
た。さらに、シートの膜厚が厚くなった場合には、光透
過率が低下するため、スクライブ線の認識が困難となる
という欠点もあった。Further, in the conventional method of sticking a sheet on the entire surface, it is necessary to cut extra by the thickness of the surface sheet, and since the sheet is generally made of an organic material, the blade is easily damaged. There was a problem. Further, when the film thickness of the sheet is increased, the light transmittance is reduced, which makes it difficult to recognize the scribe line.
【0007】[0007]
【課題を解決するための手段】本発明の固体撮像装置の
製造方法は、1次元または2次元状に配置された光電変
換素子を含む光電変換部と、前記光電変換部の周囲の出
力検出器、ボンディングパッドなどを含む周辺部とを備
えた固体撮像装置が複数個作り込まれているウェハ上
に、前記光電変換部を覆いかつ前記ボンディングパッド
およびスクライブラインを露出させるシートを選択的に
形成する工程と、前記ウェハを個々のチップに分離する
工程と、を含むものである。A method of manufacturing a solid-state image pickup device according to the present invention includes a photoelectric conversion section including photoelectric conversion elements arranged one-dimensionally or two-dimensionally, and an output detector around the photoelectric conversion section. And selectively forming a sheet that covers the photoelectric conversion unit and exposes the bonding pad and the scribe line on a wafer in which a plurality of solid-state imaging devices including a bonding pad and the like are formed. And a step of separating the wafer into individual chips.
【0008】[0008]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図1は、本発明の第1の実施例を示す工程
断面図である。まず、図1の(a)に示すように、固体
撮像素子チップが複数個作り込まれているウェハ1を裏
面シート2上に張り付け、続いて、ウェハ1の表面にフ
ォトレジスト3aを塗布する。Embodiments of the present invention will now be described with reference to the drawings. 1A to 1D are process cross-sectional views showing a first embodiment of the present invention. First, as shown in FIG. 1A, a wafer 1 having a plurality of solid-state image pickup device chips formed therein is attached onto a back sheet 2, and then a photoresist 3a is applied to the surface of the wafer 1.
【0009】次に、フォトレジスト3aに露光、現像を
施して各固体撮像素子の光電変換部を完全に覆うととも
に素子周辺部に存在するボンディングパッドを露出させ
るシート3を形成する[図1の(b)]。Next, the photoresist 3a is exposed and developed to form a sheet 3 which completely covers the photoelectric conversion portion of each solid-state image pickup device and exposes the bonding pads existing in the peripheral portion of the device [( b)].
【0010】次に、スクライブ線に沿ってブレードによ
りカッティングを行い、ウェハ1をチップ1aに分割す
る[図1の(c)]。続いて、裏面シート2を拡大し
て、各チップ1aを分離する[図1の(d)]。Next, cutting is performed with a blade along the scribe line to divide the wafer 1 into chips 1a [(c) of FIG. 1]. Subsequently, the back sheet 2 is enlarged to separate the chips 1a [(d) of FIG. 1].
【0011】図1の(d)に示すように分割された後の
チップの状態を図2に示す。同図に示されるように、固
体撮像素子チップ1aの中央部には光電変換部4が形成
されており、その周辺部5には、周辺回路の他、外縁に
沿って複数のボンディングパッド6が形成されている。
そして、シート3は光電変換部4を完全に覆うとともに
ボンディングパッド6およびスクライブ線を避けて形成
されている。FIG. 2 shows the state of the chip after being divided as shown in FIG. 1 (d). As shown in the figure, the photoelectric conversion unit 4 is formed in the central portion of the solid-state imaging device chip 1a, and in the peripheral portion 5 thereof, in addition to the peripheral circuit, a plurality of bonding pads 6 are provided along the outer edge. Has been formed.
The sheet 3 is formed so as to completely cover the photoelectric conversion section 4 and avoid the bonding pad 6 and the scribe line.
【0012】図2に示す状態とした後、チップをこの状
態でパッケージ内にマウントし、ワイヤボンディングを
行う。しかる後、シート3を剥離し、キャップを取り付
け固体撮像装置の製造を完了させる。After the state shown in FIG. 2, the chip is mounted in the package in this state and wire bonding is performed. After that, the sheet 3 is peeled off, a cap is attached, and the manufacture of the solid-state imaging device is completed.
【0013】本実施例によれば、カッティング個所が有
機系のシートで被覆されていないため、カッティングす
る際のブレードの摩耗が抑制される。また、スクライブ
線が露出しているため、その認識が容易となり、位置合
わせが精確に実行されるようになる。さらにチップをパ
ッケージ内にマウントした後、ボンディングもそのまま
の状態で実施でき、封止直前にシートの剥離を行うよう
にすることができるため、塵埃の付着する機会を大幅に
削減することができる。According to this embodiment, since the cutting portion is not covered with the organic sheet, abrasion of the blade during cutting is suppressed. In addition, since the scribe line is exposed, it is easy to recognize the scribe line, and the alignment can be accurately performed. Furthermore, after the chip is mounted in the package, the bonding can be performed as it is, and the sheet can be peeled immediately before the sealing, so that the chance of dust adhesion can be greatly reduced.
【0014】図3は、本発明の第2の実施例を説明する
ためのウェハの斜視図である。固体撮像素子に限らず、
一般に半導体素子においてはウェハ状態で各素子の検査
を実施してその良否をマーキングしているが、本実施例
ではこのマーキングにシート3を使用している。即ち、
本実施例では、ウェハ状態でチップの良否判定を行い、
良品のチップ上のみにシート3を張り付け、これをマー
キングとしている。この場合、シート3の厚さ、色を適
当に選択することにより良品の認識を容易化することが
できる。FIG. 3 is a perspective view of a wafer for explaining the second embodiment of the present invention. Not limited to solid-state image sensor,
Generally, in a semiconductor element, each element is inspected in a wafer state to mark its quality. In this embodiment, the sheet 3 is used for this marking. That is,
In this embodiment, the quality of the chip is judged in the wafer state,
The sheet 3 is attached only on the non-defective chip, which is used as a marking. In this case, it is possible to facilitate recognition of non-defective products by appropriately selecting the thickness and color of the sheet 3.
【0015】なお、シート3の形成手段としては液状フ
ォトレジストの塗布、フィルムの張り付け等の外に、ド
ライフィルムフォトレジストの貼着や印刷法等を用いる
ことができる。また、本発明の対象となる固体撮像素子
は、2次元型ばかりでなく1次元型のものも含まれる。As the means for forming the sheet 3, in addition to application of a liquid photoresist, sticking of a film, and the like, sticking of a dry film photoresist or printing method can be used. Further, the solid-state image sensor to which the present invention is applied includes not only a two-dimensional type but also a one-dimensional type.
【0016】[0016]
【発明の効果】以上説明したように、本発明は、固体撮
像素子をウェハ状態から各チップに分離するダイシング
工程に先立って、各チップ上に、ボンディングパッドお
よびスクライブ線を露出させかつ光電変換部を完全に覆
うシートを張り付けるものであるので、本発明によれ
ば、塵埃の光電変換部への直接の付着を防止でき、黒キ
ズの発生による歩留りの低下を最小限に抑えることがで
きる。また、本発明によれば、ダイシングブレードが有
機系のシートをカッティングすることがなくなるので、
ブレードの損耗が抑制される。さらにスクライブ線が露
出されているので、位置決めが容易に行えるようにな
り、ダイシング工程の作業性が向上する。As described above, according to the present invention, the bonding pad and the scribe line are exposed on each chip and the photoelectric conversion section is exposed on each chip prior to the dicing process for separating the solid-state image pickup device from the wafer state into each chip. According to the present invention, it is possible to prevent the dust from directly adhering to the photoelectric conversion portion, and to minimize the decrease in yield due to the generation of black scratches. Further, according to the present invention, since the dicing blade does not cut the organic sheet,
Wear of the blade is suppressed. Further, since the scribe line is exposed, positioning can be performed easily, and workability in the dicing process is improved.
【図1】本発明の第1の実施例を示す工程断面図。FIG. 1 is a process sectional view showing a first embodiment of the present invention.
【図2】本発明の第1の実施例を説明するための固体撮
像素子チップの平面図。FIG. 2 is a plan view of a solid-state imaging device chip for explaining the first embodiment of the present invention.
【図3】本発明の第2の実施例を説明するためのウェハ
の斜視図。FIG. 3 is a perspective view of a wafer for explaining a second embodiment of the present invention.
【図4】従来例を示す工程断面図。FIG. 4 is a process sectional view showing a conventional example.
1…ウェハ 1a…固体撮像素子チップ 2…裏面シート 3…シート 3a…フォトレジスト 4…光電変換部 5…周辺部 6…ボンディングパッド 7…スクライブ線 8…表面シート DESCRIPTION OF SYMBOLS 1 ... Wafer 1a ... Solid-state image sensor chip 2 ... Back surface sheet 3 ... Sheet 3a ... Photoresist 4 ... Photoelectric conversion part 5 ... Peripheral part 6 ... Bonding pad 7 ... Scribing line 8 ... Surface sheet
Claims (1)
ィングパッドが形成されている固体撮像素子チップが複
数個作り込まれているウェハ上に、前記光電変換部を覆
いかつ前記ボンディングパッドおよびスクライブライン
を露出させるシートを選択的に形成する工程と、 前記ウェハを個々のチップに分離する工程と、 を含む固体撮像装置の製造方法。1. A wafer on which a plurality of solid-state imaging device chips each having a photoelectric conversion portion in the center and a bonding pad formed in the peripheral portion are formed and which covers the photoelectric conversion portion and has the bonding pad and A method for manufacturing a solid-state imaging device, comprising: a step of selectively forming a sheet exposing a scribe line; and a step of separating the wafer into individual chips.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3225090A JPH0548059A (en) | 1991-08-09 | 1991-08-09 | Production of solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3225090A JPH0548059A (en) | 1991-08-09 | 1991-08-09 | Production of solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0548059A true JPH0548059A (en) | 1993-02-26 |
Family
ID=16823846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3225090A Pending JPH0548059A (en) | 1991-08-09 | 1991-08-09 | Production of solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0548059A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19735041C2 (en) * | 1996-08-13 | 1999-12-30 | Nat Semiconductor Corp | Method for separating integrated circuit micro components |
| KR100676663B1 (en) * | 2004-05-25 | 2007-02-01 | 세이코 엡슨 가부시키가이샤 | Method of manufacturing the electro-optical device |
-
1991
- 1991-08-09 JP JP3225090A patent/JPH0548059A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19735041C2 (en) * | 1996-08-13 | 1999-12-30 | Nat Semiconductor Corp | Method for separating integrated circuit micro components |
| KR100676663B1 (en) * | 2004-05-25 | 2007-02-01 | 세이코 엡슨 가부시키가이샤 | Method of manufacturing the electro-optical device |
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