JPH0548171A - Matrix Transducer - Google Patents
Matrix TransducerInfo
- Publication number
- JPH0548171A JPH0548171A JP20935491A JP20935491A JPH0548171A JP H0548171 A JPH0548171 A JP H0548171A JP 20935491 A JP20935491 A JP 20935491A JP 20935491 A JP20935491 A JP 20935491A JP H0548171 A JPH0548171 A JP H0548171A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- polarization
- piezoelectric substrate
- electrodes
- matrix transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 230000010287 polarization Effects 0.000 claims description 41
- 238000010030 laminating Methods 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Transducers For Ultrasonic Waves (AREA)
Abstract
(57)【要約】
【目的】 隣接部位への不要変位を抑え、高解像度のマ
トリクストランスデューサの提供。
【構成】 非分極化した圧電基板１に表面電極１０と裏
面電極１１を形成し、直流電圧を印加することにより電
極に挟まれた領域のみを分極する。この分極された圧電
基板１にセグメント電極２ａ，２ｂ，２ｃを形成すると
ともに、対向面にコモン電極を形成する。
(57) [Summary] [Purpose] To provide a high-resolution matrix transducer that suppresses unnecessary displacement to adjacent parts. [Structure] A front electrode 10 and a back electrode 11 are formed on a non-polarized piezoelectric substrate 1, and only a region sandwiched between the electrodes is polarized by applying a DC voltage. Segment electrodes 2a, 2b, 2c are formed on the polarized piezoelectric substrate 1, and a common electrode is formed on the opposing surface.
Description
【０００１】[0001]
【産業上の利用分野】本発明は圧電性基板の一部を任意
に振動又は変位させるマトリクストランスデューサに関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a matrix transducer for arbitrarily vibrating or displacing a part of a piezoelectric substrate.
【０００２】[0002]
【従来の技術】従来のマトリクストランスデューサの構
造を図６（ａ）（ｂ）に示す。１は板状の圧電基板、２
ａ、２ｂ、２ｃは圧電基板の表面に配された複数のセグ
メント電極、３は表面に配されたコモン電極、５ａ、５
ｂ、５ｃはセグメント電極に選択的に圧電を印加するた
めのドライバ、４は電圧・信号源である。コモン電極３
を接地し、任意のセグメント電極２ｂに選択的に電圧を
印加することにより、任意の微小部位６ｂを変位又は振
動させることができる。2. Description of the Related Art The structure of a conventional matrix transducer is shown in FIGS. 1 is a plate-shaped piezoelectric substrate, 2
a, 2b, 2c are a plurality of segment electrodes arranged on the surface of the piezoelectric substrate, 3 is a common electrode arranged on the surface, 5a, 5
Reference numerals b and 5c are drivers for selectively applying piezoelectric force to the segment electrodes, and reference numeral 4 is a voltage / signal source. Common electrode 3
Is grounded and a voltage is selectively applied to any segment electrode 2b, whereby any minute portion 6b can be displaced or vibrated.
【０００３】[0003]
【発明が解決しようとする課題】図６の（ｃ）（ｄ）
（ｅ）にそれぞれ圧電基板内部の電界分布、分極分布、
応力分布を示す。上記従来例では、図６（ｂ）の７に示
すように電気力線が理隣接セグメント電極近傍まで回り
込んでしまう。基板内の応力は電界強度と分極率との積
に比例するので、選択した電極直下以外にも応力が発生
し、不要な部位まで変位してしまうと言う問題を有して
いる。この不要変位を減じるためには、圧電基板厚ｄを
薄くし、電極間ギャップｇを広くとればよいが、ギャッ
プｇを増やすと電極ピッチｐか、電極幅を狭くしなけれ
ばならない。しかし圧電基板厚ｄを減じると、共振振動
を目的とする場合には、その共振周波数が圧電基板厚ｄ
に逆比例して高くなり、駆動回路の設計がより難しくな
る。また電極ピッチｐの増加は解像度の低下につなが
り、電極幅を狭くすると、電気・機械の変換効率が落ち
てしまう。Problems to be Solved by the Invention (c) and (d) of FIG.
(E) shows the electric field distribution inside the piezoelectric substrate, the polarization distribution,
The stress distribution is shown. In the above-mentioned conventional example, as shown by 7 in FIG. 6B, the lines of electric force wrap around to the vicinity of the adjacent segment electrodes. Since the stress in the substrate is proportional to the product of the electric field strength and the polarizability, there is a problem in that stress is generated in a region other than directly below the selected electrode, and it is displaced to an unnecessary portion. In order to reduce this unnecessary displacement, the piezoelectric substrate thickness d should be thin and the interelectrode gap g should be wide, but if the gap g is increased, the electrode pitch p or the electrode width must be narrowed. However, when the piezoelectric substrate thickness d is reduced, when the resonance vibration is intended, the resonance frequency is changed to the piezoelectric substrate thickness d.
And becomes higher in inverse proportion to, which makes the design of the drive circuit more difficult. Further, an increase in the electrode pitch p leads to a reduction in resolution, and if the electrode width is narrowed, the conversion efficiency of electric / mechanical is lowered.
【０００４】本発明は、かかる問題を解決すべくなされ
たもので、その目的とするところは、隣接部位への不要
変位を抑え、高解像度のマトリクストランスデューサを
提案することにある。The present invention has been made to solve such a problem, and an object thereof is to propose a high-resolution matrix transducer which suppresses unnecessary displacement to an adjacent portion.
【０００５】[0005]
【課題を解決するための手段】即ち、本発明によりマト
リクストランスデューサはかかる課題を解決するため
に、分極に偏りを有する圧電性基板と、この圧電性基板
の表面と裏面に配された少なくとも２対の電極と、この
電極間に電圧を選択的に印加する駆動手段で構成しても
のである。That is, in order to solve the above problems, the matrix transducer according to the present invention has a piezoelectric substrate having polarization deviation and at least two pairs of piezoelectric substrates arranged on the front and back surfaces of the piezoelectric substrate. And the driving means for selectively applying a voltage between the electrodes.
【０００６】[0006]
【作用】圧電性基板のセグメント電極とコモン電極に挟
まれていない部分の分極を、挟まれた部分の分極に対し
てその分極率を減じるか、或は分極方向を逆向きにする
ことにより、不要部位の変位を抑えることができる。[Function] The polarization of the portion of the piezoelectric substrate that is not sandwiched between the segment electrode and the common electrode is reduced or the polarization direction is reversed with respect to the polarization of the sandwiched portion. Displacement of unnecessary parts can be suppressed.
【０００７】[0007]
【実施例】はじめに、実施例を説明する前に、図２
（ａ）から（ｆ）を参照しつつ本発明に基づくマトリク
ストランスデューサについて説明する。図２（ａ）はマ
トリクストランスデューサの断面図、図２（ｂ）はセグ
メント電極２ｂに電圧を印加した時の圧電基板１内の電
界強度分布である。８は選択したセグメント電極２ｂに
より、変位を望む部位、９ａ，９ｂは隣接素子への干渉
を鑑み変位を望まない部位を示す。Embodiment First, before explaining an embodiment, FIG.
A matrix transducer according to the present invention will be described with reference to (a) to (f). 2A is a cross-sectional view of the matrix transducer, and FIG. 2B is an electric field intensity distribution in the piezoelectric substrate 1 when a voltage is applied to the segment electrode 2b. Reference numeral 8 indicates a portion which is desired to be displaced by the selected segment electrode 2b, and 9a and 9b are portions which are not desired to be displaced in view of interference with adjacent elements.
【０００８】図２（ｃ）に示すようにセグメント電極２
ｂの直下以外の部位９の圧電基板内の分極率を減じる
と、基板内部の応力は図２（ｄ）に示すように、電極直
下以外の部位９は部位８に比してダイナミックに減じる
ことができ、不要な振動、変位を抑えることができる。As shown in FIG. 2 (c), the segment electrode 2
When the polarizability in the piezoelectric substrate in the portion 9 other than directly below b is reduced, the stress inside the substrate is dynamically reduced as compared with the portion 8 in the portion 9 other than directly below the electrode, as shown in FIG. Therefore, unnecessary vibration and displacement can be suppressed.
【０００９】また図２（ｅ）に示すように、部位８に対
して部位９の分極方向を反転させると、図２（ｆ）に示
すように部位９では部位８に対して逆方向に応力が生じ
る。従って、部位８の変位から生じる、部位９への弾性
的な変位の伝達を上記逆方向の応力で相殺することがで
きる。As shown in FIG. 2 (e), when the polarization direction of the portion 9 is reversed with respect to the portion 8, stress is applied to the portion 9 in the opposite direction to the portion 8 as shown in FIG. 2 (f). Occurs. Therefore, the transmission of the elastic displacement to the portion 9 caused by the displacement of the portion 8 can be canceled by the stress in the opposite direction.
【００１０】（実施例１）図１（ａ）（ｂ）はこのよう
な原理をもとに構成したマトリクストランスデューサの
実施例を示したものである。図１（ａ）（ｂ）は各々圧
電基板１の断面図であり、図１（ａ）はその分極工程
を、図１（ｂ）は分極後のセグメント電極２とコモン電
極３を形成した状態を示す。(Embodiment 1) FIGS. 1A and 1B show an embodiment of a matrix transducer constructed on the basis of such a principle. 1 (a) and 1 (b) are cross-sectional views of the piezoelectric substrate 1. FIG. 1 (a) shows the polarization process, and FIG. 1 (b) shows the segment electrode 2 and the common electrode 3 after polarization. Indicates.
【００１１】圧電基板１は厚さ６００μｍのチタン酸ジ
ルコン酸塩（ＰＺＴ）系圧電セラミクスで形成した。The piezoelectric substrate 1 was formed of a zirconate titanate (PZT) type piezoelectric ceramic having a thickness of 600 μm.
【００１２】なお本例で用いた材質のほかにＺｎＯ等の
圧電性セラミクスや、ＬｉＮｂＯ、3、水晶、ＬｉＴａ
Ｏ3、Ｂｉ12ＧｅＯ20等の圧電性単結晶や、ポリ弗化ビ
ニリデン（ＰＶＤＦ）等の高分子圧電材料、さらに上記
圧電材料を混合したもの、また上記圧電材料を膜状に積
層したものを使用することも可能である。In addition to the materials used in this example, piezoelectric ceramics such as ZnO, LiNbO, 3 , quartz, LiTa, etc.
A piezoelectric single crystal such as O 3 or Bi 12 GeO 20, a polymeric piezoelectric material such as polyvinylidene fluoride (PVDF), a mixture of the above piezoelectric materials, and a laminate of the above piezoelectric materials in a film form. It is also possible to use.
【００１３】図１（ａ）において１３は５００Ｖの直流
電圧源、１０，１１は選択的な分極を施すための分極用
表面電極と裏面電極である。In FIG. 1A, 13 is a DC voltage source of 500 V, and 10 and 11 are polarization front and back electrodes for applying selective polarization.
【００１４】あらかじめ非分極化した圧電基板１に表面
電極１０と裏面電極１１を形成し直流電圧を印加するこ
とにより上記電極に挟まれた領域のみが分極される。１
４は分極を示す矢印である。By forming the front surface electrode 10 and the back surface electrode 11 on the piezoelectric substrate 1 which has been depolarized in advance and applying a DC voltage, only the region sandwiched by the electrodes is polarized. 1
4 is an arrow indicating polarization.
【００１５】非分極化は基板をキュリー点以上の温度に
加熱保持することにより行った。本例に使用した圧電基
板はキュリー点が３２０℃であったので、４００℃に加
熱して、非分極化した。Depolarization was performed by heating and holding the substrate at a temperature above the Curie point. The Curie point of the piezoelectric substrate used in this example was 320 ° C., so it was heated to 400 ° C. and depolarized.
【００１６】また表面電極と裏面電極はスパッタリング
によりクロム−金を合計０．５μｍ膜形成した後、フォ
トリソグラフィーによりパターニングした。電極幅Ｗ１
は５０μｍ、電極ピッチは１７０μｍとした。On the front and back electrodes, a chromium-gold film having a total thickness of 0.5 μm was formed by sputtering and then patterned by photolithography. Electrode width W1
Was 50 μm and the electrode pitch was 170 μm.
【００１７】分極時には基板を２００℃まで加熱し１０
分保持した。During polarization, the substrate is heated to 200 ° C.
Held minutes.
【００１８】この後、上記分極用電極を除去した後、図
１（ｂ）に示すように、ともに圧電基板の両面をラップ
研磨した後、クロム薄膜を１０ｎｍ形成しその上に金薄
膜を１μｍ形成し、フォトリソグラフィーによりセグメ
ント電極２ａ，２ｂ，２ｃとコモン電極３を形成した。
セグメント電極のピッチは１７０μｍ、電極幅Ｗ２は１
２０μｍとした。分極用電極の幅Ｗ１に比してセグメン
ト電極の幅Ｗ２はＷ１＜Ｗ２とした。Then, after removing the polarization electrode, both surfaces of the piezoelectric substrate were lap-polished, and then a chromium thin film was formed to a thickness of 10 nm and a gold thin film was formed to a thickness of 1 μm thereon, as shown in FIG. 1 (b). Then, the segment electrodes 2a, 2b, 2c and the common electrode 3 were formed by photolithography.
The segment electrode pitch is 170 μm and the electrode width W2 is 1
It was set to 20 μm. The width W2 of the segment electrode was set to W1 <W2 as compared with the width W1 of the polarization electrode.
【００１９】上記構成でセグメント電極２ｂとコモン電
極３間に交流電圧を印加した際の、セグメント電極２ｂ
の中央１２ｂの振幅と、セグメント電極２ｃの中央１２
ｃの振幅の比を測定したところ、従来４０％であったも
のが、２０％に減らすことができた。In the above structure, when an alternating voltage is applied between the segment electrode 2b and the common electrode 3, the segment electrode 2b
Amplitude of the center 12b of the
When the amplitude ratio of c was measured, it was able to be reduced to 20% from 40% in the past.
【００２０】（実施例２）図３（ａ）（ｂ）（ｃ）に第
２の実施例を示す。(Embodiment 2) FIGS. 3A, 3B and 3C show a second embodiment.
【００２１】図３（ａ）（ｂ）にその分極工程を、図３
（ｃ）は分極後のセグメント電極２ａ，２ｂ，２ｃとコ
モン電極３を形成した状態を示す。The polarization step is shown in FIGS.
(C) shows a state in which the segment electrodes 2a, 2b, 2c and the common electrode 3 after polarization are formed.
【００２２】圧電基板１は厚さ６００μｍのチタン酸ジ
ルコン酸塩（ＰＺＴ）系圧電セラミクスで形成した。１
３は直流電圧源、１０，１１は分極を施すための分極用
表面電極と裏面電極である。１７はレーザー光を示し、
１６は後にセグメント電極を形成し振動させる部位、１
５は非振動部位を表す。The piezoelectric substrate 1 was formed of a zirconate titanate (PZT) type piezoelectric ceramic having a thickness of 600 μm. 1
3 is a DC voltage source, and 10 and 11 are polarization front and back electrodes for applying polarization. 17 indicates a laser beam,
Reference numeral 16 is a portion for forming a segment electrode later and vibrating, 1
5 represents a non-vibration part.
【００２３】図３（ａ）においてあらかじめ圧電基板１
に表面電極１０と裏面電極１１を形成し直流電圧を印加
し基板全体を分極した。１４は分極を示す矢印である。
分極時には基板を２００℃まで加熱し１０分保持した。In FIG. 3A, the piezoelectric substrate 1 is previously prepared.
A front electrode 10 and a back electrode 11 were formed on the substrate, and a DC voltage was applied to polarize the entire substrate. 14 is an arrow indicating polarization.
During polarization, the substrate was heated to 200 ° C. and held for 10 minutes.
【００２４】この後、図３（ｂ）に示すように、Ｈｅ−
Ｎｅレーザーを用い、部位１５を選択的にキュリー点以
上に加熱し、露光部のみを非分極化した。After this, as shown in FIG. 3B, He-
A Ne laser was used to selectively heat the portion 15 to the Curie point or higher to depolarize only the exposed portion.
【００２５】その後図３（ｃ）にごとく、前記分極用電
極１０，１１をエッチングし、所望のセグメント電極２
ａ，２ｂ，２ｃ、コモン電極３を形成した。セグメント
電極２ａ，２ｂ，２ｃ、コモン電極３を分極用電極から
形成するので、成膜、膜除去の工程を減らすことができ
た。Then, as shown in FIG. 3C, the polarization electrodes 10 and 11 are etched to obtain a desired segment electrode 2.
a, 2b, 2c and the common electrode 3 were formed. Since the segment electrodes 2a, 2b, 2c and the common electrode 3 are formed from the polarization electrodes, the steps of film formation and film removal can be reduced.
【００２６】尚選択加熱方法は、レーザーの他に、一様
な発散光源と、この光源の光波長に対して、反射率の高
い膜によるマスクを基板上に形成することによっても可
能である。The selective heating method can also be performed by forming a uniform divergent light source and a mask made of a film having a high reflectance with respect to the light wavelength of the light source on the substrate, in addition to the laser.
【００２７】上記構成でセグメント電極２ｂとコモン電
極３間に交流電圧を印加した際の、セグメント電極２ｂ
の中央１２ｂの振幅と、セグメント電極２ｃの中央１２
ｃの振幅の比を測定したところ、従来４０％であったも
のが、２０％に減らすことができた。The segment electrode 2b when an alternating voltage is applied between the segment electrode 2b and the common electrode 3 in the above-mentioned configuration
Amplitude of the center 12b of the
When the amplitude ratio of c was measured, it was able to be reduced to 20% from 40% in the past.
【００２８】（実施例３）図４（ａ）（ｂ）（ｃ）に第
３の実施例を示す。(Embodiment 3) FIGS. 4A, 4B and 4C show a third embodiment.
【００２９】図４（ａ）（ｂ）にその分極工程を、図４
（ｃ）は分極後のセグメント電極２ａ，２ｂ，２ｃとコ
モン電極３を形成した状態を示す。The polarization step is shown in FIGS.
(C) shows a state in which the segment electrodes 2a, 2b, 2c and the common electrode 3 after polarization are formed.
【００３０】１３は直流電圧源、１０，１１は分極を施
すための分極用表面電極と裏面電極である。１８，１９
は第２の部分的な分極を施すための分極用表面電極と裏
面電極を示し、１６は後にセグメント電極を形成し振動
させる部位、１５は非振動部位を表す。Reference numeral 13 is a DC voltage source, and 10 and 11 are polarization front and back electrodes for polarization. 18, 19
Indicates a polarization front surface electrode and a back surface electrode for applying the second partial polarization, 16 indicates a portion where a segment electrode is to be formed later to vibrate, and 15 indicates a non-vibration portion.
【００３１】図４（ａ）においてあらかじめ圧電基板１
に表面電極１０と裏面電極１１を形成し直流圧電を印加
し基板全体を分極した。１４は分極を示す矢印である。
分極時には基板を２００℃まで加熱し１０分保持した。In FIG. 4A, the piezoelectric substrate 1 is previously prepared.
A front surface electrode 10 and a back surface electrode 11 were formed on the substrate, and DC piezoelectric was applied to polarize the entire substrate. 14 is an arrow indicating polarization.
During polarization, the substrate was heated to 200 ° C. and held for 10 minutes.
【００３２】この後、図４（ｂ）に示すように、分極用
電極１０，１１をエッチングし第２の分極用電極１８，
１９を形成し、図４（ａ）とは逆極性の電圧を印加し、
部位１６のみを逆方向に分極した。After that, as shown in FIG. 4B, the polarization electrodes 10 and 11 are etched to form the second polarization electrodes 18 and 11.
19 is formed, and a voltage having a reverse polarity to that of FIG.
Only site 16 was polarized in the opposite direction.
【００３３】その後図４（ｃ）にごとく、所望のセグメ
ント電極２ａ，２ｂ，２ｃ、コモン電極３を形成した。Thereafter, as shown in FIG. 4C, desired segment electrodes 2a, 2b, 2c and a common electrode 3 were formed.
【００３４】部位１６に対して部位１５の分極方向を反
転させると、部位１５には逆方向に応力が生じる。従っ
て、部位１６の変位から生じる、部位１５への弾性的な
変位の伝達を上記逆方向の応力で相殺することができ
た。When the polarization direction of the portion 15 is reversed with respect to the portion 16, stress is generated in the opposite direction in the portion 15. Therefore, the transmission of the elastic displacement to the portion 15 caused by the displacement of the portion 16 can be canceled by the stress in the opposite direction.
【００３５】上記構成でセグメント電極２ｂとコモン電
極３間に交流電圧を印加した際の、セグメント電極２ｂ
の中央１２ｂの振幅と、セグメント電極２ｃの中央１２
ｃの振幅の比を測定したところ、従来４０％であったも
のが、１０％に減らすことができた。With the above structure, when an AC voltage is applied between the segment electrode 2b and the common electrode 3, the segment electrode 2b
Amplitude of the center 12b of the
When the ratio of the amplitude of c was measured, it could be reduced from 10% in the past to 40%.
【００３６】（実施例４）図５（ａ）（ｂ）に第４の実
施例を示す。(Embodiment 4) FIGS. 5A and 5B show a fourth embodiment.
【００３７】あらかじめ上記実施例１から３で述べた方
法により選択的な分極をし、電極を形成した圧電基板２
０，２１，２２を図５（ｂ）のごとく、接着し積層し
た。電極２３，２５，２７には金を、電極２４，２６，
２８には錫を用いた。圧電基板厚は全て０．２ｍｍとし
た。A piezoelectric substrate 2 having electrodes formed by selective polarization in advance by the method described in Examples 1 to 3 above.
0, 21, 22 were adhered and laminated as shown in FIG. Gold is used for the electrodes 23, 25, 27, and electrodes 24, 26,
28 was tin. The thickness of each piezoelectric substrate was 0.2 mm.
【００３８】基板間の接着は、３枚を重ね、加重後３０
０℃に加熱し、金電極と錫電極を相互拡散させておこな
った。The adhesion between the substrates is performed by stacking three sheets and applying a weight of 30.
It was performed by heating to 0 ° C. and mutually diffusing the gold electrode and the tin electrode.
【００３９】このような製法を用いることにより、分極
形成時には薄い基板で、より少ない電界の回り込みでで
きるので、より高解像度に分極書き込みができた。By using such a manufacturing method, it is possible to perform polarization writing with higher resolution because a thin substrate can be used with less electric field wrapping during polarization formation.
【００４０】上記構成でセグメント電極２ｂとコモン電
極３間に交流電圧を印加した際の、セグメント電極２ｂ
の中央１２ｂの振幅と、セグメント電極２ｃの中央１２
ｃの振幅の比を測定したところ、従来４０％であったも
のが、１５％に減らすことができた。The segment electrode 2b when an alternating voltage is applied between the segment electrode 2b and the common electrode 3 in the above configuration
Amplitude of the center 12b of the
When the amplitude ratio of c was measured, it was able to be reduced from 15% to 40%, which was conventionally 40%.
【００４１】[0041]
【発明の効果】本発明によれば、圧電性基板のセグメン
ト電極とコモン電極に挟まれていない部分の分極を、挟
まれた部分の分極に対してその分極率を減じるか、ある
いは分極方向を逆向きにすることにより、不要部位の変
位を抑えることができ、より高解像度なマトリクストラ
ンスデューサを実現できると言う効果を有する。According to the present invention, the polarization of the portion of the piezoelectric substrate that is not sandwiched between the segment electrode and the common electrode is reduced or the polarization direction is reduced with respect to the polarization of the sandwiched portion. By arranging them in the opposite direction, it is possible to suppress the displacement of the unnecessary portion, and it is possible to achieve a higher resolution matrix transducer.
【図１】本発明によるマトリクストランスデューサの製
法と構造を示す図。FIG. 1 is a diagram showing a manufacturing method and a structure of a matrix transducer according to the present invention.
【図２】本発明によるマトリクストランスデューサの原
理を示す図。FIG. 2 is a diagram showing the principle of a matrix transducer according to the present invention.
【図３】本発明によるマトリクストランスデューサの製
法と構造の第２の実施例を示す図。FIG. 3 is a diagram showing a second embodiment of the manufacturing method and structure of the matrix transducer according to the present invention.
【図４】本発明によるマトリクストランスデューサの製
法と構造の第３の実施例を示す図。FIG. 4 is a diagram showing a third embodiment of the manufacturing method and structure of the matrix transducer according to the present invention.
【図５】本発明によるマトリクストランスデューサの製
法と構造の第４の実施例を示す図。FIG. 5 is a diagram showing a fourth embodiment of the manufacturing method and structure of the matrix transducer according to the present invention.
【図６】従来のマトリクストランスデューサの構造と問
題を示す図。FIG. 6 is a diagram showing a structure and a problem of a conventional matrix transducer.
１ 圧電基板 ２ セグメント電極 ３ コモン電極 1 Piezoelectric substrate 2 Segment electrode 3 Common electrode
Claims (4)
圧電性基板の表面と裏面に配された少なくとも２対の電
極と、この電極間に電圧を選択的に印加する駆動手段と
を備えたことを特徴とするマトリクストランスデュー
サ。1. A piezoelectric substrate having a biased polarization, at least two pairs of electrodes arranged on the front and back surfaces of the piezoelectric substrate, and driving means for selectively applying a voltage between the electrodes. Matrix transducer characterized by
た部分のみが分極されていることを特徴とする請求項１
記載のマトリクストランスデューサ。2. A portion of the piezoelectric substrate sandwiched by the electrode pair is polarized.
The described matrix transducer.
た部分と前記電極対に挟持されていない部分の分極方向
が異なることを特徴とする請求項１記載のマトリクスト
ランスデューサ。3. The matrix transducer according to claim 1, wherein a portion of the piezoelectric substrate sandwiched by the electrode pair and a portion of the piezoelectric substrate not sandwiched by the electrode pair have different polarization directions.
積層してなることを特徴とする請求項１記載のマトリク
ストランスデューサ。4. The matrix transducer according to claim 1, wherein the piezoelectric substrate is formed by laminating a plurality of piezoelectric substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20935491A JPH0548171A (en) | 1991-08-21 | 1991-08-21 | Matrix Transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20935491A JPH0548171A (en) | 1991-08-21 | 1991-08-21 | Matrix Transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0548171A true JPH0548171A (en) | 1993-02-26 |
Family
ID=16571560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20935491A Pending JPH0548171A (en) | 1991-08-21 | 1991-08-21 | Matrix Transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0548171A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005123554A (en) * | 2003-09-26 | 2005-05-12 | Murata Mfg Co Ltd | Stacked piezoelectric element and its manufacturing method |
| JP2009241393A (en) * | 2008-03-31 | 2009-10-22 | Brother Ind Ltd | Piezoelectric actuator, liquid transport device, and method for manufacturing piezoelectric actuator |
| JP2011515833A (en) * | 2008-02-29 | 2011-05-19 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | Flash optical annealing for thin films |
| WO2022176689A1 (en) * | 2021-02-19 | 2022-08-25 | 信越化学工業株式会社 | Composite wafer and method for producing same |
-
1991
- 1991-08-21 JP JP20935491A patent/JPH0548171A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005123554A (en) * | 2003-09-26 | 2005-05-12 | Murata Mfg Co Ltd | Stacked piezoelectric element and its manufacturing method |
| JP2011515833A (en) * | 2008-02-29 | 2011-05-19 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | Flash optical annealing for thin films |
| JP2009241393A (en) * | 2008-03-31 | 2009-10-22 | Brother Ind Ltd | Piezoelectric actuator, liquid transport device, and method for manufacturing piezoelectric actuator |
| US8186812B2 (en) | 2008-03-31 | 2012-05-29 | Brother Kogyo Kabushiki Kaisha | Piezoelectric actuator, liquid transporting apparatus, and method for manufacturing piezoelectric actuator |
| WO2022176689A1 (en) * | 2021-02-19 | 2022-08-25 | 信越化学工業株式会社 | Composite wafer and method for producing same |
| JPWO2022176689A1 (en) * | 2021-02-19 | 2022-08-25 |
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