JPH054892A - Carbon boat for liquid phase epitaxial growth - Google Patents
Carbon boat for liquid phase epitaxial growthInfo
- Publication number
- JPH054892A JPH054892A JP18009791A JP18009791A JPH054892A JP H054892 A JPH054892 A JP H054892A JP 18009791 A JP18009791 A JP 18009791A JP 18009791 A JP18009791 A JP 18009791A JP H054892 A JPH054892 A JP H054892A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- slider
- solution
- epitaxial growth
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 11
- 239000007791 liquid phase Substances 0.000 title claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
(57)【要約】
【目的】 スライダ使用の液相エピタキシャル成長用カ
ーボンボートにより、基板上にエピタキシャル成長させ
るとき、基板の厚みに差があるときはエピタキシャル層
用の溶液が成長後基板面に残留することがあるので、こ
のような残留を生じないような構成のカーボンボートの
構成をとる。
【構成】 スライダをスライダ基板とこのスライダ基板
に形成した貫通穴に嵌め込まれ、スライダ基板に対し、
上下方向に移動できる溶液溜を組合せて形成する。
(57) [Abstract] [Purpose] When a carbon boat for liquid phase epitaxial growth using a slider is used to grow epitaxially on a substrate, the solution for the epitaxial layer should remain on the substrate surface after growth when there is a difference in the thickness of the substrate. Therefore, the carbon boat is constructed so that such a residue does not occur. [Structure] A slider is fitted into a slider substrate and a through hole formed in the slider substrate, and
It is formed by combining solution reservoirs that can move vertically.
Description
【0001】[0001]
【産業上の利用分野】本発明は化合物半導体などの液相
エピタキシャル成長装置として用いられる液相エピタキ
シャル成長用カーボンボートに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a carbon boat for liquid phase epitaxial growth used as a liquid phase epitaxial growth apparatus for compound semiconductors and the like.
【0002】[0002]
【従来の技術】スライド法による液相エピタキシャル成
長は、図6に断面で示すようなカーボンボートを用いて
行われている。図に示すように、基板ホルダ6に基板収
納部5が形成され、ここに基板4が収納される。これに
対してスライダ1には、例えば第1エピタキシャル層用
溶液7、第2エピタキシャル層溶液8を収納する開口部
が設けられる。この開口部は下部が開口し、溶液7,8
は基板ホルダ6上において、基板ホルダ6を底として保
持され、フック13によって、スライダ1を基板ホルダ6
の長手方向にスライドさせ、順次溶液7,8の溶液を基
板4と接触させることによって、所定のエピタキシャル
薄膜を基板面に形成させることができる。2. Description of the Related Art Liquid phase epitaxial growth by the slide method is carried out using a carbon boat as shown in cross section in FIG. As shown in the figure, a substrate holder 5 is formed with a substrate housing portion 5 in which the substrate 4 is housed. On the other hand, the slider 1 is provided with an opening for accommodating the first epitaxial layer solution 7 and the second epitaxial layer solution 8, for example. The bottom of this opening is open,
Is held on the substrate holder 6 with the substrate holder 6 as the bottom, and the hook 13 holds the slider 1 on the substrate holder 6.
A predetermined epitaxial thin film can be formed on the surface of the substrate by sliding it in the longitudinal direction and contacting the solutions 7 and 8 with the substrate 4 successively.
【0003】[0003]
【発明が解決しようとする課題】上記のようにカーボン
ボートを用いてスライド法により液相エピタキシャル成
長を行う場合、基板(ウエハ)と溶液溜の間隔が重要で
ある。これが大きすぎるとエピタキシャル成長後の溶液
除去がうまく行かず、成長した基板上に溶液が残留す
る。また、基板が厚すぎると、溶液溜が基板にぶつか
り、スムースなスライドが出来なくなるため、やはり溶
液が残留したり、基板表面に傷が発生したりする。これ
を解決するためにねじによる基板収納部深さの調節機構
などが工夫されている(例えば特願昭56−173827)。し
かしこのような方法では、基板の厚みが変わるたびに調
節する必要がある。When liquid phase epitaxial growth is performed by the slide method using a carbon boat as described above, the distance between the substrate (wafer) and the solution reservoir is important. If it is too large, the solution cannot be removed well after the epitaxial growth, and the solution remains on the grown substrate. Further, if the substrate is too thick, the solution reservoir collides with the substrate and smooth sliding cannot be performed, so that the solution may remain or scratches may occur on the substrate surface. In order to solve this problem, a mechanism for adjusting the depth of the substrate housing portion by screws has been devised (for example, Japanese Patent Application No. 56-173827). However, in such a method, it is necessary to adjust each time the thickness of the substrate changes.
【0004】[0004]
【課題を解決するための手段】本発明は、上記課題を解
決するため、液相エピタキシャル成長用カーボンボート
を構成するスライダを改善して、スライダをスライダ基
板と独立した溶液溜とで構成し、スライダ基板面に形成
した貫通穴に前記溶液溜を嵌め込んで、前記基板に対し
て上下方向に移動できるようにし、かつ、溶液溜の下部
先端において成長時のスライダの進行方向に上り傾斜を
付け、スライダの進行時、基板ホルダの基板保持部にお
けるわずか凹凸を円滑に進行できるように構成するもの
である。以下図1〜図3に示す実施例により本発明を説
明する。図6と同一部分は同一符号で示す。図1は上面
図、図2は断面図である。スライダ1はスライダ基板9
と第1、第2エピタキシャル層用溶液溜2,3よりな
る。溶液溜の数は図の2個に限定されるものではない。
これら独立の溶液溜2,3は上下方向で開口している。
この溶液溜2,3はスライダ基板9の長手方向で、スラ
イダ基板面を貫通して設けられた、溶液溜外形断面対応
の穴に嵌め込まれ、スライダ基板9に対し上下の方向で
移動できるように組合わされる。なお、スライダ基板9
の下面は長手方向両側下部に脚部10を備えている。基板
ホルダ6にはその面に基板収納部5を形成し、その長手
方向両側には、前記スライダ基板9の両側の脚部10と接
する案内部11を備えている。更にスライダ1の液相エピ
タキシャル成長時のスライド方向において前部となる各
溶液溜2,3の下面に上り傾斜をつけ、傾斜面12を形成
している。溶液溜2,3の下部開口部の幅は基板4の幅
より小さく形成しており、基板収納部5の深さは基板4
の厚みと同じか、わずかに浅くしている。In order to solve the above-mentioned problems, the present invention has improved a slider which constitutes a carbon boat for liquid phase epitaxial growth, and the slider is constituted by a slider substrate and a solution reservoir independent of the slider substrate. By fitting the solution reservoir into a through hole formed on the substrate surface so that the solution reservoir can be moved in the vertical direction with respect to the substrate, and at the lower end of the solution reservoir, an upward inclination is given in the traveling direction of the slider during growth, When the slider advances, the slight unevenness in the substrate holding portion of the substrate holder can be smoothly advanced. The present invention will be described below with reference to the embodiments shown in FIGS. The same parts as those in FIG. 6 are designated by the same reference numerals. 1 is a top view and FIG. 2 is a cross-sectional view. The slider 1 is a slider substrate 9
And the first and second epitaxial layer solution reservoirs 2 and 3. The number of solution reservoirs is not limited to two in the figure.
These independent solution reservoirs 2 and 3 are open vertically.
The solution reservoirs 2 and 3 are fitted in holes corresponding to the outer cross section of the solution reservoir provided in the longitudinal direction of the slider substrate 9 and penetrating the slider substrate surface so that the solution reservoirs 2 and 3 can move vertically with respect to the slider substrate 9. Be combined. The slider substrate 9
The lower surface of the is provided with legs 10 on both lower sides in the longitudinal direction. The substrate holder 6 has a substrate housing portion 5 formed on its surface, and guide portions 11 contacting the leg portions 10 on both sides of the slider substrate 9 are provided on both sides in the longitudinal direction thereof. Further, the lower surfaces of the respective solution reservoirs 2 and 3 which are front portions in the sliding direction during the liquid phase epitaxial growth of the slider 1 are inclined upward to form an inclined surface 12. The widths of the lower openings of the solution reservoirs 2 and 3 are formed to be smaller than the width of the substrate 4, and the depth of the substrate housing portion 5 is set to the depth of the substrate 4.
The thickness is the same as or slightly shallower.
【0005】[0005]
【作用】図3は成長前の状態であり、図4は第1エピタ
キシャル層成長時の状態を示す。図4の状態では、溶液
溜2は基板4の上に乗っている状態を示すが、図3の状
態より図4の状態に至る間において、たとえ、基板4の
厚みが基板収納部5の深さより厚くても、前記傾斜面12
の存在により溶液溜2は若干上昇し、スムースなスライ
ドが可能となる。図5は第2エピタキシャル層成長時の
状態を示している。この場合、図4より図5の位置にス
ムースにスライドし自重により溶液溜2は若干下降して
基板ホルダ6の面に接し、溶液溜3は若干上昇して基板
4の上に乗った状態となる。このようにスムースなスラ
イドの状態が可能となるため、エピタキシャル成長後の
基板面における溶液の残留を少なくすることができる。FIG. 3 shows the state before the growth, and FIG. 4 shows the state during the growth of the first epitaxial layer. In the state of FIG. 4, the solution reservoir 2 is on the substrate 4, but between the state of FIG. 3 and the state of FIG. Even if thicker than the above, the inclined surface 12
Due to the presence of, the solution reservoir 2 rises slightly, and a smooth slide becomes possible. FIG. 5 shows a state during the growth of the second epitaxial layer. In this case, the solution slides smoothly from the position shown in FIG. 4 to the position shown in FIG. 5, and the solution reservoir 2 slightly descends by its own weight to come into contact with the surface of the substrate holder 6, and the solution reservoir 3 slightly ascends to rest on the substrate 4. Become. Since a smooth slide state is possible in this way, it is possible to reduce the amount of solution remaining on the substrate surface after epitaxial growth.
【0006】[0006]
【試験例】このカーボンボートを用いて、GaAs基板
上にAlGaAsエピタキシャル層を2層成長させた。
エピタキシャル成長用溶液の量は表1の通りである。基
板4の厚みは 400μmと 420μmの2種類を試みた。基
板収納部5の深さは 400μmである。図3の状態で水素
ガスを流した反応管内に保持し 850℃に昇温した後反応
管外よりスライダを操作して図4の状態にし、 830℃ま
で20分かけて冷却した。その後図5の状態にして、 810
℃まで20分で冷却し更にスライダをスライドさせてから
室温まで冷却し、反応管外に取り出した。得られたエピ
タキシャル層の厚みは、第1層が10μm、第2層が8μ
mであった。 400μmと420μmの2種類の基板共に、
成長用溶液の基板上への残留は、ほとんど見られなかっ
た。[Test Example] Using this carbon boat, two AlGaAs epitaxial layers were grown on a GaAs substrate.
The amount of the epitaxial growth solution is shown in Table 1. Two thicknesses of the substrate 4 were tried, 400 μm and 420 μm. The depth of the substrate housing portion 5 is 400 μm. In the state of FIG. 3, the temperature was maintained in the reaction tube in which hydrogen gas was flown and the temperature was raised to 850 ° C. Then, the slider was operated from the outside of the reaction tube to the state of FIG. Then, in the state shown in FIG.
The mixture was cooled to 20 ° C. in 20 minutes, further slid the slider, cooled to room temperature, and taken out of the reaction tube. The thickness of the obtained epitaxial layer is 10 μm for the first layer and 8 μm for the second layer.
It was m. Both two types of substrates, 400 μm and 420 μm,
Almost no growth solution remained on the substrate.
【0007】[0007]
【表1】 [Table 1]
【0008】[0008]
【発明の効果】以上述べたように本発明によれば、スラ
イド法による液相エピタキシャル成長において、基板の
厚みが変わっても特別な調整無しに、成長用溶液の残留
がないエピタキシャル基板を得ることが出来る。As described above, according to the present invention, it is possible to obtain an epitaxial substrate in which the growth solution does not remain without special adjustment even if the thickness of the substrate changes in the liquid phase epitaxial growth by the slide method. I can.
【図1】本発明実施例の平面図を示す。FIG. 1 shows a plan view of an embodiment of the present invention.
【図2】図1の実施例のA−A方向断面図を示す。2 is a sectional view taken along line AA of the embodiment shown in FIG.
【図3】図1の実施例のB−B方向断面図を示す。FIG. 3 is a sectional view taken along line BB of the embodiment shown in FIG.
【図4】図1の実施例の動作説明図である。FIG. 4 is an operation explanatory diagram of the embodiment in FIG.
【図5】図1の実施例の動作説明図である。5A and 5B are operation explanatory diagrams of the embodiment in FIG.
【図6】従来のカーボンボートを長さ方向断面図で示
す。FIG. 6 shows a conventional carbon boat in a longitudinal sectional view.
1 スライダ 2 第1エピタキシャル層用溶液溜 3 第2エピタキシャル層用溶液溜 4 基板 5 基板収納部 6 基板ホルダ 7 第1エピタキシャル層用溶液 8 第2エピタキシャル層用溶液 9 スライダ基板 10 脚部 11 案内部 1 Slider 2 First Epitaxial Layer Solution Reservoir 3 Second Epitaxial Layer Solution Reservoir 4 Substrate 5 Substrate Storage Section 6 Substrate Holder 7 First Epitaxial Layer Solution 8 Second Epitaxial Layer Solution 9 Slider Substrate 10 Leg 11 Guide
Claims (1)
長用カーボンボートにおいて、カーボンボートは基板収
納部を備える基板ホルダと該基板ホルダの長手方向に移
動できるスライダよりなり、該スライダは基板ホルダに
対し上下方向に移動でき、下部開口部の幅が基板のそれ
より小さく、且つスライド方向下面に上り傾斜をつけた
溶液溜をスライダ基板に備えることを特徴とする液相エ
ピタキシャル成長用カーボンボート。Claim: What is claimed is: 1. A carbon boat for liquid-phase epitaxial growth by a slide method, comprising a substrate holder having a substrate housing and a slider movable in the longitudinal direction of the substrate holder, the slider being a substrate. A carbon boat for liquid phase epitaxial growth characterized in that the slider substrate is provided with a solution reservoir that can move vertically with respect to the holder, the width of the lower opening is smaller than that of the substrate, and the lower surface in the sliding direction has an upward slope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18009791A JPH054892A (en) | 1991-06-24 | 1991-06-24 | Carbon boat for liquid phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18009791A JPH054892A (en) | 1991-06-24 | 1991-06-24 | Carbon boat for liquid phase epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH054892A true JPH054892A (en) | 1993-01-14 |
Family
ID=16077382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18009791A Pending JPH054892A (en) | 1991-06-24 | 1991-06-24 | Carbon boat for liquid phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH054892A (en) |
-
1991
- 1991-06-24 JP JP18009791A patent/JPH054892A/en active Pending
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