JPH055168B2 - - Google Patents

Info

Publication number
JPH055168B2
JPH055168B2 JP60204265A JP20426585A JPH055168B2 JP H055168 B2 JPH055168 B2 JP H055168B2 JP 60204265 A JP60204265 A JP 60204265A JP 20426585 A JP20426585 A JP 20426585A JP H055168 B2 JPH055168 B2 JP H055168B2
Authority
JP
Japan
Prior art keywords
electrode
workpiece
discharge chamber
plasma processing
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60204265A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6265421A (ja
Inventor
Yoshifumi Ogawa
Masaharu Saikai
Takeo Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20426585A priority Critical patent/JPS6265421A/ja
Publication of JPS6265421A publication Critical patent/JPS6265421A/ja
Publication of JPH055168B2 publication Critical patent/JPH055168B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP20426585A 1985-09-18 1985-09-18 マイクロ波プラズマ処理方法及び装置 Granted JPS6265421A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20426585A JPS6265421A (ja) 1985-09-18 1985-09-18 マイクロ波プラズマ処理方法及び装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20426585A JPS6265421A (ja) 1985-09-18 1985-09-18 マイクロ波プラズマ処理方法及び装置

Publications (2)

Publication Number Publication Date
JPS6265421A JPS6265421A (ja) 1987-03-24
JPH055168B2 true JPH055168B2 (fr) 1993-01-21

Family

ID=16487601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20426585A Granted JPS6265421A (ja) 1985-09-18 1985-09-18 マイクロ波プラズマ処理方法及び装置

Country Status (1)

Country Link
JP (1) JPS6265421A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112138A (ja) * 1992-09-30 1994-04-22 Sumitomo Metal Ind Ltd マイクロ波プラズマ処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5813627B2 (ja) * 1982-02-26 1983-03-15 株式会社日立製作所 マイクロ波プラズマエッチング装置

Also Published As

Publication number Publication date
JPS6265421A (ja) 1987-03-24

Similar Documents

Publication Publication Date Title
US4844775A (en) Ion etching and chemical vapour deposition
US6042700A (en) Adjustment of deposition uniformity in an inductively coupled plasma source
US6254737B1 (en) Active shield for generating a plasma for sputtering
US5277751A (en) Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
JP3381916B2 (ja) 低周波誘導型高周波プラズマ反応装置
US6238528B1 (en) Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US20040050495A1 (en) Plasma processing apparatus and plasma processing method
JPH04354867A (ja) プラズマ処理装置
KR20010052312A (ko) 이온화된 물리적 증착 방법 및 장치
KR970067606A (ko) 패러데이-스퍼터 실드를 갖는 유도 결합 플라즈마 반응기
JP2003515433A (ja) ハイブリッドプラズマ処理装置
JPH0770532B2 (ja) プラズマ処理装置
JP3561080B2 (ja) プラズマ処理装置及びプラズマ処理方法
WO2002078041A2 (fr) Appareil de traitement par faisceau de particules neutres
US6231725B1 (en) Apparatus for sputtering material onto a workpiece with the aid of a plasma
KR102490292B1 (ko) 플라스마 처리 장치
JP2001118834A (ja) 調整可能な一様性及び統計的電子過熱を有し、ガス・クラッキングを低減する高密度プラズマ・ツール
US6235169B1 (en) Modulated power for ionized metal plasma deposition
KR100196038B1 (ko) 헬리콘파플라즈마처리방법 및 장치
US5998931A (en) Method and apparatus for controlling electrostatic coupling to plasmas
KR100250547B1 (ko) 기판 코팅 또는 에칭 장치
JPH055168B2 (fr)
JP3177573B2 (ja) 磁気中性線放電プラズマ処理装置
JP2019220532A (ja) プラズマ処理装置及びプラズマ処理方法
JP4474026B2 (ja) 誘導結合プラズマの空間分布制御方法及びこの方法を実施するためのプラズマ発生装置及びエッチング装置