JPH0553152A - Liquid crystal element - Google Patents
Liquid crystal elementInfo
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- JPH0553152A JPH0553152A JP23576591A JP23576591A JPH0553152A JP H0553152 A JPH0553152 A JP H0553152A JP 23576591 A JP23576591 A JP 23576591A JP 23576591 A JP23576591 A JP 23576591A JP H0553152 A JPH0553152 A JP H0553152A
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- liquid crystal
- temperature
- equation
- chiral smectic
- dielectric anisotropy
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、液晶表示素子や液晶光
シャッタ等で用いる液晶素子、特に強誘電性液晶素子に
関し、詳しくは、液晶の誘電率異方性について数値規定
することにより、温度特性を改善した液晶素子に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal element used in a liquid crystal display element, a liquid crystal optical shutter or the like, particularly a ferroelectric liquid crystal element. The present invention relates to a liquid crystal element having improved characteristics.
【0002】[0002]
【従来技術】強誘電性液晶分子の屈折率異方性を利用し
て偏光素子との組み合わせにより透過光線を制御する型
の表示素子がクラーク(Clark)及びラガーウオル
(Lagerwall)により提案されている(特開昭
56−107216号公報、米国特許第4367924
号明細書等)。この強誘電性液晶は、一般に特定の温度
域において、非らせん構造のカイラルスメクチックC相
(SmC* )又はH相(SmH* )を有し、この状態に
おいて、加えられる電界に応答して第1の光学的安定状
態と第2の光学的安定状態のいずれかを取り、且つ電界
の印加のないときはその状態を維持する性質、すなわち
双安定性を有し、また電界の変化に対する応答も速やか
であり、高速ならびに記憶型の表示素子用としての広い
利用が期待され、特にその機能から大画面で高精細なデ
ィスプレーへの応用が期待されている。2. Description of the Related Art A display device of a type in which transmitted light rays are controlled by using a refractive index anisotropy of ferroelectric liquid crystal molecules in combination with a polarizing element has been proposed by Clark and Lagerwall ( JP-A-56-107216, U.S. Pat. No. 4,367,924.
No. etc.). This ferroelectric liquid crystal generally has a non-helical chiral smectic C phase (SmC * ) or H phase (SmH * ) in a specific temperature range, and in this state, it has a first phase in response to an applied electric field. Has an optical stable state and a second optical stable state, and has the property of maintaining that state when no electric field is applied, that is, bistability, and has a quick response to changes in the electric field. Therefore, it is expected to be widely used for high-speed and memory type display elements, and in particular, due to its function, application to a large-screen, high-definition display is expected.
【0003】このような双安定状態が付与されたカイラ
ルスメクチック液晶素子は、一般的に、液晶層が2μm
以下の極めて薄い膜厚で形成され、実用上、−10〜5
0℃の広い温度範囲で画像出しが可能であることが必要
である。In a chiral smectic liquid crystal device provided with such a bistable state, the liquid crystal layer is generally 2 μm.
It is formed with the following extremely thin film thickness and is practically -10 to 5
It is necessary that images can be displayed in a wide temperature range of 0 ° C.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、一般
に、カイラルスメクチック液晶は、低温になるにつれて
粘性係数ηが大きくなり、そのために、液晶に電界を印
加した際の応答速度τが遅くなってしまうという問題が
ある。このために、低温側では、大画面で高精細なディ
スプレーでの画像表示のスピードが遅くなってしまうこ
とになる。However, in general, a chiral smectic liquid crystal has a problem that the viscosity coefficient η becomes larger as the temperature becomes lower, so that the response speed τ when an electric field is applied to the liquid crystal becomes slower. There is. Therefore, on the low temperature side, the speed of image display on a large-screen, high-definition display becomes slow.
【0005】したがって、本発明の目的は、液晶素子に
おいて、このような問題点を解決し特にカイラルスメク
チック液晶を用いた液晶素子における応答速度の温度依
存性を改善し、画像表示のスピードが遅くならないよう
することにある。Therefore, an object of the present invention is to solve the above problems in a liquid crystal device, improve the temperature dependence of the response speed particularly in a liquid crystal device using a chiral smectic liquid crystal, and not slow down the image display speed. To do so.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
本発明では、2枚の対向した電極基板間にカイラルスメ
クチック液晶層を保持してなる液晶素子において、カイ
ラルスメクチック液晶の45℃における誘電率異方性Δ
ε(45℃)と20℃における誘電率異方性Δε(20
℃)とは、下記数2式を満足するようにしている。In order to achieve the above object, according to the present invention, in a liquid crystal element having a chiral smectic liquid crystal layer held between two opposing electrode substrates, the dielectric constant of the chiral smectic liquid crystal at 45 ° C. Anisotropy Δ
ε (45 ° C) and dielectric anisotropy at 20 ° C Δε (20
C) means that the following expression 2 is satisfied.
【0007】[0007]
【数2】 [Equation 2]
【0008】[0008]
【作用】通常、カイラルスメクチック液晶の電界印加時
の応答速度τは、印加される電圧をE、粘性係数をη、
自発分極をPS とすれば、下記数3式で表される。In general, the response speed τ of a chiral smectic liquid crystal when an electric field is applied is such that the applied voltage is E, the viscosity coefficient is η,
If the spontaneous polarization is P S , it can be expressed by the following formula 3.
【0009】[0009]
【数3】 この数3式は、自発分極トルクと粘性トルクという2つ
のトルクのバランスの条件から容易に導出される(例え
ば、岡野、小林、共編、「液晶」、培風館、153ペー
ジ参照)。数3式から、応答速度τの温度特性を改善す
るためには、低温での粘性を小さくすること、および、
低温での自発分極PS を大きくすることが必要である。
自発分極PS は、低温では大きくなるという性質がある
ため、粘性係数ηを低温で小さくするすることが必須で
ある。ところが、通常、粘性係数ηは、低温でかなり大
きくなるため、粘性係数ηを小さくすることは容易では
ない。[Equation 3] This equation 3 is easily derived from the condition of the balance between the two torques of spontaneous polarization torque and viscous torque (see, for example, Okano, Kobayashi, co-editing, “Liquid Crystal”, Baifukan, p. From the equation (3), in order to improve the temperature characteristic of the response speed τ, the viscosity at low temperature should be reduced, and
It is necessary to increase the spontaneous polarization P S at low temperature.
Since the spontaneous polarization P S has the property of increasing at low temperatures, it is essential to reduce the viscosity coefficient η at low temperatures. However, since the viscosity coefficient η usually becomes considerably large at low temperatures, it is not easy to reduce the viscosity coefficient η.
【0010】そこで、本発明者らは、粘性以外に応答速
度の温度依存特性を改善できる物性値が他にないかどう
かを検討したところ、誘電率異方性Δεの温度特性を改
善すれば、応答速度の改善に効果があることを発見し
た。以下、これについて説明する。Therefore, the present inventors have examined whether there is any other physical property value that can improve the temperature-dependent characteristic of the response speed other than the viscosity, and if the temperature characteristic of the dielectric anisotropy Δε is improved, It was discovered that it is effective in improving the response speed. This will be described below.
【0011】前記数3式は、自発分極トルクと粘性トル
クという2つのトルクバランスの条件から導出された
が、本発明者らはさらに誘電率異方性トルクも加えて計
算と考察を行い、上記3つのトルクバランスの条件より
容易に、下記数4式を得た。The above equation (3) was derived from the two torque balance conditions of spontaneous polarization torque and viscous torque. The present inventors further calculated and considered the dielectric anisotropy torque, The following equation 4 was obtained easily from the three torque balance conditions.
【0012】[0012]
【数4】 ここで、ε0 は真空の誘電率、Δεは誘電率異方性の大
きさ、Θはカイラルスメクチック液晶のコーン角であ
る。従来は、数3式を用いて自発分極PS と応答速度τ
を実験的に求めて粘性係数ηを算出していたが、Δεを
も考慮する場合は数4式を用いて、粘性係数ηを算出す
べきである。[Equation 4] Here, ε 0 is the dielectric constant of vacuum, Δε is the magnitude of the dielectric anisotropy, and Θ is the cone angle of the chiral smectic liquid crystal. Conventionally, the spontaneous polarization P S and the response speed τ are calculated using the equation (3).
Although the viscosity coefficient η was calculated experimentally, the viscosity coefficient η should be calculated using Equation 4 when Δε is also taken into consideration.
【0013】PS E≫ε0 ΔεE2 sin2 Θが成立す
ると数4式は数3式に帰着するが、Δε、E、Θの値に
よっては成立しないこともあり得る。そこで、本発明者
らはより正確な数4式を用いて考察を進めた。When P S E >> ε 0 ΔεE 2 sin 2 Θ holds, the equation (4) is reduced to the equation (3), but it may not hold depending on the values of Δε, E, and Θ. Therefore, the present inventors proceeded with the consideration by using the more accurate equation (4).
【0014】応答速度の温度依存性の指標として、高温
と低温での2点の温度を、それぞれT2 、T1 としたと
きの応答速度の比τ(T1 )/τ(T2 )を用いると、
数4式より、下記数5式を得る。As an index of the temperature dependence of the response speed, the ratio τ (T 1 ) / τ (T 2 ) of the response speeds when the temperatures at two points of high temperature and low temperature are T 2 and T 1 , respectively. When used,
The following equation 5 is obtained from the equation 4.
【0015】[0015]
【数5】 そこで、誘電率異方性Δεに注目して、応答速度τの温
度特性を改善するという目的をもって以下のような考察
がなされた。[Equation 5] Therefore, the following consideration was made with a view to improving the temperature characteristic of the response speed τ, paying attention to the dielectric anisotropy Δε.
【0016】数5式の左辺の値を小さくするためには、
上述のように、まず粘性係数ηを低温でも小さくするこ
とが必要であるが、これは容易ではない。In order to reduce the value on the left side of Equation 5,
As described above, first, it is necessary to reduce the viscosity coefficient η even at a low temperature, but this is not easy.
【0017】次に、自発分極PS は低温で大きくなるの
で、応答速度τの温度特性改善には有利に作用する。コ
ーン角Θも低温で大きくなるので、自発分極PS と同様
な効果を有すると一応は考えられるが、その際、誘電率
異方性Δεの符号が問題になってくる。一般に、誘電率
異方性Δεの大きさは、温度依存性があり、温度の値に
よっては、符号が変わることもあり得るからでる。この
ことの定式化は「S.Chandrasekhar著
“Liquidcrystal”、Cambridge
University press、59ページ」で
行われている。つまり、誘電率異方性Δεは、液晶分子
の長軸方向の比誘電率および液晶分子の長軸に垂直な方
向の比誘電率を用いれば、下記数6式で表されるが、多
くのカイラルスメクチック液晶について長軸方向の比誘
電率と長軸に垂直な方向の比誘電率の温度特性を測定し
たところ、長軸方向の比誘電率は、温度低下とともに小
さくなるのに対して、長軸に垂直な方向の比誘電率は、
温度依存性があまりないことが判明した。Next, since the spontaneous polarization P S becomes large at low temperatures, it has an advantageous effect on improving the temperature characteristics of the response speed τ. Since the cone angle Θ also increases at low temperature, it is considered that it has the same effect as the spontaneous polarization P S , but at that time, the sign of the dielectric anisotropy Δε becomes a problem. This is because the magnitude of the dielectric anisotropy Δε generally depends on the temperature, and the sign may change depending on the temperature value. The formulation of this is described in “Liquid crystal” by S. Chandrasekhar, Cambridge.
"University press, page 59". That is, the dielectric anisotropy Δε can be expressed by the following formula 6 using the relative permittivity in the long axis direction of liquid crystal molecules and the relative permittivity in the direction perpendicular to the long axis of liquid crystal molecules. For chiral smectic liquid crystals, the temperature characteristics of the relative permittivity in the long-axis direction and the relative permittivity in the direction perpendicular to the long-axis were measured. The relative permittivity in the direction perpendicular to the axis is
It turned out that there is not much temperature dependence.
【0018】[0018]
【数6】 このことにより、多くのカイラルスメクチック液晶で
は、高温側でΔε(T2)>0、低温側でΔε(T1)<0とな
る。この場合、数5式の右辺は、分子が大きくなり、分
母が小さくなるので、右辺全体として大きくなり、応答
速度τの温度特性は悪くなるという作用を及ぼすので、
誘電率異方性Δεの温度変化は、あまり大きくすべきで
ないという結論を得る。もし、高温側のΔε(T2)も低温
側のΔε(T1)も共に負の場合は、Δε(T1)<Δε(T2)<
0となるので、数5式の右辺はかなり小さくなって温度
特性改善にはかなり有効である。[Equation 6] As a result, in many chiral smectic liquid crystals, Δε (T 2 )> 0 on the high temperature side and Δε (T 1 ) <0 on the low temperature side. In this case, since the numerator is large and the denominator is small on the right side of Equation 5, the entire right side is large, and the temperature characteristic of the response speed τ is deteriorated.
We conclude that the temperature change of the dielectric anisotropy Δε should not be too large. If both Δε (T 2 ) on the high temperature side and Δε (T 1 ) on the low temperature side are negative, Δε (T 1 ) <Δε (T 2 ) <
Since it becomes 0, the right side of the equation (5) becomes considerably small, which is quite effective for improving the temperature characteristic.
【0019】そして以上の結果をふまえて、さらに検討
を進めた結果、高温側の温度T2 を45℃、低温側の温
度T1 を20℃としたとき、下記数7式を満足するとき
に限って、応答速度τの温度特性を飛躍的に改善できる
ことが発見された。As a result of further study based on the above results, when the temperature T 2 on the high temperature side is 45 ° C. and the temperature T 1 on the low temperature side is 20 ° C., the following formula 7 is satisfied: It has been discovered that the temperature characteristics of the response speed τ can be dramatically improved.
【0020】[0020]
【数7】 [Equation 7]
【0021】[0021]
【実施例】以下、本発明を実施例に従って具体的に説明
する。2枚の0.7mm厚のガラス板を用意し、それぞ
れのガラス板上にITO膜を形成することにより、電圧
印加用の電極を作成し、さらにこの上にSiO2 を蒸着
させて絶縁層を形成した。さらにこの上に、シランカッ
プリング剤(信越化学(株)製KBM−602)0.2
%イソプロピルアルコール溶液を回転数2000r.
p.m.のスピンナーで15秒間塗布し、表面処理を施
した。この後、120℃にて20分間加熱乾燥処理を施
した。EXAMPLES The present invention will be specifically described below with reference to examples. Two 0.7 mm thick glass plates are prepared, and an ITO film is formed on each glass plate to form electrodes for voltage application, and SiO 2 is vapor-deposited on the electrodes to form an insulating layer. Formed. Furthermore, on this, a silane coupling agent (KBM-602 manufactured by Shin-Etsu Chemical Co., Ltd.) 0.2
% Isopropyl alcohol solution at 2000 rpm.
p. m. Was applied for 15 seconds with the spinner of No. 1 and surface-treated. After that, a heat drying treatment was performed at 120 ° C. for 20 minutes.
【0022】さらに表面処理を行ったこのITO膜付き
のガラス板上に、ポリイミド樹脂前駆体(東レ(株)S
P−510)1.5%ジメチルアセトアミド溶液を回転
数2000r.p.m.のスピンナーで15秒間塗布し
た。この成膜後、60分間、300℃で加熱縮合焼成処
理を施した。このときの塗膜の膜厚は、約250Åであ
った。Further, a polyimide resin precursor (Toray Industries, Inc. S
P-510) 1.5% dimethylacetamide solution was rotated at 2000 rpm. p. m. Was applied for 15 seconds using the spinner of After this film formation, a heat condensation baking treatment was performed at 300 ° C. for 60 minutes. The film thickness of the coating film at this time was about 250Å.
【0023】次に、この焼成後の被膜に、アセテート植
毛布によるラビング処理を行い、その後、イソプロピル
アルコール液で洗浄し、平均粒径2μmのシリカビーズ
を一方のガラス板上に散布し、それぞれのラビング処理
軸が互いに平行となるように接着シール剤(リクソンボ
ンド;チッソ(株)製)を用いてガラス板を貼り合わ
せ、60分間、100℃にて加熱乾燥し、セルを作成し
た。このセルのセル厚をベレック位相板によって測定し
たところ、約2μmであった。Next, the fired coating was rubbed with an acetate flocked cloth and then washed with an isopropyl alcohol solution, and silica beads having an average particle diameter of 2 μm were sprinkled on one of the glass plates. A glass plate was attached using an adhesive sealant (Rixon Bond; manufactured by Chisso Corporation) so that the rubbing treatment axes were parallel to each other, and dried by heating at 100 ° C. for 60 minutes to form a cell. When the cell thickness of this cell was measured with a Berek phase plate, it was about 2 μm.
【0024】このセルにフェニルピリミジンを主成分と
する液晶組成物A〜Hを等方性液体状態で注入し、等方
相から20℃/hで25℃まで徐冷することにより、強
誘電性液晶素子を作成した。Liquid crystal compositions A to H containing phenylpyrimidine as a main component were injected into this cell in an isotropic liquid state and gradually cooled from the isotropic phase to 25 ° C. at 20 ° C./h to obtain ferroelectricity. A liquid crystal element was created.
【0025】この強誘電性液晶素子を使ってピーク・ト
ウ・ピーク電圧Vpp=16Vの電圧印加により直交ニ
コル下での光学的な応答(透過光量変化0〜90%)を
検知して応答速度τを測定した。Using this ferroelectric liquid crystal device, the optical response (change in transmitted light amount 0 to 90%) under orthogonal Nicols is detected by applying a voltage of peak-to-peak voltage Vpp = 16V, and the response speed τ Was measured.
【0026】次に、以下のようにして誘電率の測定を行
った。すなわち、まず、ガラス板上にITO膜を形成
し、その上にポリイミド配向膜(東レ(株)製LP−6
4)を50Åで形成し、ラビング処理により水平配向セ
ルを形成した。一方、ポリイミドの代わりにカップリン
グ剤(チッソ(株)製ODS−E)を用いて垂直配向セ
ルを形成した。Next, the dielectric constant was measured as follows. That is, first, an ITO film was formed on a glass plate, and a polyimide alignment film (LP-6 manufactured by Toray Industries, Inc.) was formed thereon.
4) was formed with 50Å and a horizontally aligned cell was formed by rubbing treatment. On the other hand, a vertical alignment cell was formed using a coupling agent (ODS-E manufactured by Chisso Corporation) instead of polyimide.
【0027】これら2つのセルにそれぞれ上記の強誘電
性液晶を注入し、水平配向セルを用いて液晶分子の長軸
方向の比誘電率を測定し、垂直配向セルを用いて液晶分
子の長軸に垂直な方向の比誘電率を測定した。この測定
は、YHP社のLCRメーター4192Aを用い、0.
5Vsin波、20kHzの条件で行った。The above-mentioned ferroelectric liquid crystal was injected into each of these two cells, the relative permittivity in the major axis direction of the liquid crystal molecules was measured using a horizontal alignment cell, and the major axis of the liquid crystal molecules was aligned using a vertical alignment cell. The relative dielectric constant in the direction perpendicular to was measured. This measurement was performed by using an LCR meter 4192A manufactured by YHP Co.
It was performed under the conditions of 5 V sin wave and 20 kHz.
【0028】以上のようにして、液晶A〜Eについて、
それぞれ、高温側の温度T2 を45℃、低温側の温度T
1 を20℃として、応答速度τ[μsec]、および誘
電率異方性Δεの測定を行った結果を、表1に示す。As described above, for the liquid crystals A to E,
The temperature T 2 on the high temperature side is 45 ° C. and the temperature T 2 on the low temperature side is respectively
Table 1 shows the results of measuring the response speed τ [μsec] and the dielectric anisotropy Δε with 1 set to 20 ° C.
【0029】[0029]
【表1】 この結果から、実施例1〜6の液晶化合物A〜Fの場合
のように、Δε(45℃)−Δε(20℃)の値が0.
7より小さければ、応答速度τの温度特性の指標である
τ(20℃)/τ(45℃)の値が小さくなることがわ
かる。一方、比較例1および2の液晶化合物GおよびH
の場合のように、Δε(45℃)−Δε(20℃)の値
が0.7以上であると、温度特性が急激に悪化してい
る。[Table 1] From these results, as in the case of the liquid crystal compounds A to F of Examples 1 to 6, the value of Δε (45 ° C.) − Δε (20 ° C.) was 0.
It can be seen that if it is smaller than 7, the value of τ (20 ° C.) / Τ (45 ° C.), which is an index of the temperature characteristic of the response speed τ, becomes small. On the other hand, the liquid crystal compounds G and H of Comparative Examples 1 and 2
When the value of Δε (45 ° C.) − Δε (20 ° C.) is 0.7 or more as in the case of 1, the temperature characteristics are rapidly deteriorated.
【0030】以上から、誘電率異方性の温度変化をある
一定値以下にすれば、応答速度の温度依存性を大きく改
善した液晶素子を得ることができることがわかる。From the above, it can be seen that by setting the temperature change of the dielectric anisotropy to a certain value or less, it is possible to obtain a liquid crystal element in which the temperature dependence of the response speed is greatly improved.
【0031】[0031]
【発明の効果】以上説明したように本発明によれば、カ
イラルスメクチック液晶の45℃における誘電率異方性
Δε(45℃)と20℃における誘電率異方性Δε(2
0℃)との差、Δε(45℃)−Δε(20℃)の値が
0.7より小さくなるようにしたため、応答速度の温度
依存性を改善し、低温でも画像表示のスピードが遅くな
らないようすることができる。As described above, according to the present invention, the dielectric anisotropy Δε (45 ° C.) of the chiral smectic liquid crystal at 45 ° C. and the dielectric anisotropy Δε (2 of 20 ° C.
(0 ° C), and the value of Δε (45 ° C) -Δε (20 ° C) is smaller than 0.7, the temperature dependence of the response speed is improved, and the image display speed does not become slow even at low temperatures. You can
Claims (1)
メクチック液晶層を保持してなる液晶素子において、カ
イラルスメクチック液晶の45℃における誘電率異方性
Δε(45℃)と20℃における誘電率異方性Δε(2
0℃)とは、下記数1式を満足することを特徴とする液
晶素子。 【数1】 1. A liquid crystal device comprising a chiral smectic liquid crystal layer held between two opposing electrode substrates, wherein the chiral smectic liquid crystal has a dielectric anisotropy Δε (45 ° C.) at 45 ° C. and a dielectric constant at 20 ° C. Anisotropy Δε (2
0 ° C.) is a liquid crystal element characterized by satisfying the following expression 1. [Equation 1]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23576591A JPH0553152A (en) | 1991-08-23 | 1991-08-23 | Liquid crystal element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23576591A JPH0553152A (en) | 1991-08-23 | 1991-08-23 | Liquid crystal element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0553152A true JPH0553152A (en) | 1993-03-05 |
Family
ID=16990907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23576591A Pending JPH0553152A (en) | 1991-08-23 | 1991-08-23 | Liquid crystal element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0553152A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013088758A (en) * | 2011-10-21 | 2013-05-13 | Japan Display Central Co Ltd | Liquid crystal display device |
-
1991
- 1991-08-23 JP JP23576591A patent/JPH0553152A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013088758A (en) * | 2011-10-21 | 2013-05-13 | Japan Display Central Co Ltd | Liquid crystal display device |
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