JPH0555191A - Cleaning tank - Google Patents
Cleaning tankInfo
- Publication number
- JPH0555191A JPH0555191A JP21349391A JP21349391A JPH0555191A JP H0555191 A JPH0555191 A JP H0555191A JP 21349391 A JP21349391 A JP 21349391A JP 21349391 A JP21349391 A JP 21349391A JP H0555191 A JPH0555191 A JP H0555191A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning tank
- cleaning
- foreign matter
- gas
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
(57)【要約】
【目的】 特に洗浄槽の中央付近に停滞している異物を
効率良く除去し、被洗浄物に対する異物の付着防止が可
能とされる洗浄槽を提供する。
【構成】 ＬＳＩ製造工程における半導体ウェハ１を洗
浄処理する洗浄槽２とされ、洗浄槽２の下方に洗浄液３
を供給する洗浄液供給口４が開口され、その上部に整流
板５が備えられている。そして、洗浄液供給口４から供
給された洗浄液３は整流板５を通って整流され、さらに
外周部よりオーバーフローされる構造となっている。一
方、洗浄槽２の上部にはノズル６が設けられ、気体７が
洗浄槽２の水面に沿って流出される。そして、洗浄槽２
に停滞している異物８が、気体７の流れにより周辺に押
し出されたり、または水面上に起こる対流１２により周
辺に移動させられ、オーバーフローにより除去されるよ
うになっている。
(57) [Summary] [Purpose] To provide a cleaning tank capable of efficiently removing foreign matter stagnating near the center of the cleaning tank and preventing foreign matter from adhering to the object to be cleaned. [Structure] A cleaning tank 2 for cleaning a semiconductor wafer 1 in an LSI manufacturing process is provided, and a cleaning liquid 3 is provided below the cleaning tank 2.
The cleaning liquid supply port 4 for supplying the cleaning liquid is opened, and the rectifying plate 5 is provided above the cleaning liquid supply port 4. The cleaning liquid 3 supplied from the cleaning liquid supply port 4 is rectified through the rectifying plate 5, and is further overflowed from the outer peripheral portion. On the other hand, a nozzle 6 is provided above the cleaning tank 2 so that the gas 7 flows out along the water surface of the cleaning tank 2. And the cleaning tank 2
The foreign matter 8 stagnation is pushed to the periphery by the flow of the gas 7 or moved to the periphery by the convection 12 that occurs on the water surface, and is removed by the overflow.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、洗浄技術に関し、特に
ＬＳＩ製造工程における半導体ウェハの洗浄処理におい
て、異物の付着防止が可能とされる洗浄槽に適用して有
効な技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning technique, and more particularly to a technique effectively applied to a cleaning tank capable of preventing adhesion of foreign matter in a semiconductor wafer cleaning process in an LSI manufacturing process.
【０００２】[0002]
【従来の技術】従来、ＬＳＩ製造工程における半導体ウ
ェハの洗浄装置としては、たとえば半導体ウェハが搬送
および洗浄を兼ねたウェハカセットに収納された状態で
洗浄槽に浸漬され、これによって半導体ウェハの洗浄処
理が行われている。2. Description of the Related Art Conventionally, as a semiconductor wafer cleaning apparatus in an LSI manufacturing process, for example, a semiconductor wafer is immersed in a cleaning tank while being stored in a wafer cassette which is used for both transportation and cleaning. Is being done.
【０００３】たとえば、洗浄槽の構造は、洗浄槽の下方
より洗浄液を供給し、この洗浄液を上面からオーバーフ
ローさせ、これによって洗浄槽内の異物を排出できる構
造となっている。For example, the structure of the cleaning tank is such that the cleaning liquid is supplied from below the cleaning tank, the cleaning liquid overflows from the upper surface, and thereby the foreign matter in the cleaning tank can be discharged.
【０００４】なお、これに類似する技術としては、たと
えば社団法人電子通信学会、昭和５９年１１月３０日発
行、「ＬＳＩハンドブック」Ｐ２３８〜Ｐ２３９の文献
に記載されている。A technique similar to this is described, for example, in the references of "LSI Handbook" P238 to P239, published by the Institute of Electronics and Communication Engineers, November 30, 1984.
【０００５】[0005]
【発明が解決しようとする課題】ところが、前記のよう
な従来技術において、洗浄槽の外周付近は、オーバーフ
ロー液の流れの効果によって異物が効率良く除去される
が、洗浄槽の中央付近では、オーバーフロー液の流れの
効果が低いために異物を完全に除去することができない
という問題がある。However, in the prior art as described above, foreign matters are efficiently removed near the outer periphery of the cleaning tank by the effect of the overflow liquid flow, but overflow near the center of the cleaning tank. There is a problem that the foreign matter cannot be completely removed because the effect of the liquid flow is low.
【０００６】このために、洗浄槽の中央付近に停滞して
いる異物が、半導体ウェハを洗浄槽から出し入れする時
に半導体ウェハに付着し、洗浄効率の低下を招くという
問題がある。For this reason, there is a problem that foreign matter stagnation in the vicinity of the center of the cleaning tank adheres to the semiconductor wafer when the semiconductor wafer is taken in and out of the cleaning tank, resulting in a decrease in cleaning efficiency.
【０００７】そこで、本発明の目的は、洗浄液の水面上
に停滞する異物を除去し、特に洗浄槽の中央付近に停滞
している異物を効率良く除去することができる洗浄槽を
提供することにある。[0007] Therefore, an object of the present invention is to provide a cleaning tank capable of removing foreign matter stagnating on the surface of the cleaning liquid, and particularly efficiently removing foreign matter stagnating near the center of the cleaning tank. is there.
【０００８】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述および添付図面から明らかに
なるであろう。The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
【０００９】[0009]
【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば、
下記のとおりである。Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.
【００１０】すなわち、本発明の洗浄槽は、被洗浄物を
洗浄槽内の洗浄液に浸漬し、洗浄液をオーバーフローさ
せて被洗浄物を洗浄する洗浄槽であって、洗浄槽の上部
に、この洗浄槽の水面に沿って気体をブローするノズル
を設けるものである。That is, the cleaning tank of the present invention is a cleaning tank for immersing an object to be cleaned in the cleaning liquid in the cleaning tank and overflowing the cleaning liquid to clean the object to be cleaned. A nozzle for blowing gas along the water surface of the tank is provided.
【００１１】この場合に、前記被洗浄物の出し入れ時
に、気体のブローを停止可能とするようにしたものであ
る。In this case, the blowing of gas can be stopped when the object to be cleaned is put in or taken out.
【００１２】また、前記気体の圧力および流量を調整可
能とするようにしたものである。Further, the pressure and flow rate of the gas can be adjusted.
【００１３】さらに、前記ノズルの角度および位置を調
整可能とするようにしたものである。Further, the angle and the position of the nozzle can be adjusted.
【００１４】[0014]
【作用】前記した洗浄槽によれば、ブロー用のノズルが
洗浄槽の上部に設けられることにより、洗浄槽の中央付
近に停滞している異物を洗浄槽の周辺に押し出したり、
または洗浄槽の中央付近の水面上に起こる対流で洗浄槽
の周辺に移動させることができる。これにより、洗浄槽
の中央付近に停滞している異物を効率良く除去し、被洗
浄物に対する異物の付着を防止することができる。According to the above-mentioned cleaning tank, the blow nozzle is provided at the upper part of the cleaning tank, so that the foreign matter stagnation near the center of the cleaning tank is pushed out to the periphery of the cleaning tank,
Alternatively, it can be moved to the periphery of the cleaning tank by convection that occurs on the water surface near the center of the cleaning tank. As a result, it is possible to efficiently remove the foreign matter staying near the center of the cleaning tank and prevent the foreign matter from adhering to the object to be cleaned.
【００１５】この場合に、気体のブローを被洗浄物の出
し入れ時に停止できるので、被洗浄物の生乾燥を防止す
ることができる。In this case, since the blowing of the gas can be stopped when the object to be cleaned is put in or taken out, it is possible to prevent the dry cleaning of the object to be cleaned.
【００１６】また、気体の圧力および流量、さらにノズ
ルの角度および位置を調整できるので、気体を最適な条
件でブローし、洗浄槽に停滞している異物をより一層効
率良く、かつ確実に除去することができる。Further, since the pressure and flow rate of the gas and the angle and position of the nozzle can be adjusted, the gas is blown under the optimum conditions, and the foreign matter stagnation in the cleaning tank is removed more efficiently and surely. be able to.
【００１７】[0017]
【実施例】図１は本発明の一実施例である洗浄槽を示す
断面図である。FIG. 1 is a sectional view showing a cleaning tank which is an embodiment of the present invention.
【００１８】まず、図１により本実施例の洗浄槽の構成
を説明する。First, the construction of the cleaning tank of this embodiment will be described with reference to FIG.
【００１９】本実施例の洗浄槽は、たとえばＬＳＩ製造
工程における半導体ウェハ（被洗浄物）１を洗浄処理す
る洗浄槽２とされ、洗浄槽２の下方に洗浄液３を供給す
る洗浄液供給口４が開口され、またその上部に整流板５
が備えられている。そして、洗浄液供給口４から供給さ
れた洗浄液３は整流板５を通って整流され、さらに洗浄
槽２の外周部よりオーバーフローされる構造となってい
る。The cleaning tank of this embodiment is, for example, a cleaning tank 2 for cleaning a semiconductor wafer (object to be cleaned) 1 in an LSI manufacturing process, and a cleaning liquid supply port 4 for supplying a cleaning liquid 3 is provided below the cleaning tank 2. Opened and rectifying plate 5 on top
Is provided. The cleaning liquid 3 supplied from the cleaning liquid supply port 4 is rectified through the rectifying plate 5, and is further overflowed from the outer peripheral portion of the cleaning tank 2.
【００２０】一方、洗浄槽２の上部にはノズル６が設け
られ、たとえばエアーまたはＮ2 などの気体７が洗浄槽
２の水面に沿って流出される。そして、この気体７の流
れにより洗浄槽２の中央付近に停滞している異物８が、
洗浄槽２の周辺に押し出されたり、または中央付近の水
面上に起こる対流により洗浄槽２の周辺に移動させら
れ、オーバーフローにより洗浄槽２の外に除去されるよ
うになっている。On the other hand, a nozzle 6 is provided above the cleaning tank 2, and a gas 7 such as air or N 2 flows out along the water surface of the cleaning tank 2. The foreign matter 8 stagnating near the center of the cleaning tank 2 due to the flow of the gas 7
It is pushed out to the periphery of the cleaning tank 2, or moved to the periphery of the cleaning tank 2 by convection that occurs on the water surface near the center, and is removed to the outside of the cleaning tank 2 by overflow.
【００２１】次に、本実施例の作用について説明する。Next, the operation of this embodiment will be described.
【００２２】以上のように構成される洗浄槽２におい
て、たとえば薬液処理が終了した複数枚の半導体ウェハ
１を、ウェハカセット９に収納した状態で洗浄槽２内の
洗浄液３に浸漬する。そして、洗浄槽２の洗浄液供給口
４から洗浄液３を供給し、この場合に洗浄液３の流れ１
０は、図１のように整流板５を通って上昇する流れ１０
ａとなり、さらに洗浄槽２の外周部よりオーバーフロー
する流れ１０ｂとなる。In the cleaning tank 2 configured as described above, for example, a plurality of semiconductor wafers 1 that have been subjected to the chemical treatment are immersed in the cleaning liquid 3 in the cleaning tank 2 while being housed in the wafer cassette 9. Then, the cleaning liquid 3 is supplied from the cleaning liquid supply port 4 of the cleaning tank 2, and in this case, the flow 1 of the cleaning liquid 3
0 is a flow 10 rising through the straightening vanes 5 as shown in FIG.
It becomes a, and further becomes a flow 10b that overflows from the outer peripheral portion of the cleaning tank 2.
【００２３】同時に、半導体ウェハ１の洗浄液３への浸
漬後にノズル６から気体７を流出させ、図１のようにノ
ズル６の反対方向へ気流の流れ１１を作り、さらに洗浄
槽２の中央付近の水面上に対流１２を発生させる。これ
により、たとえば従来のように洗浄槽２の中央付近に異
物８が停滞している場合においても、異物８を気体７の
流れ１１により洗浄槽２の周辺に押し出し、また水面上
の対流１２により洗浄槽２の周辺に移動させ、オーバー
フローする洗浄液３と一緒に洗浄槽２の外に流れ落とす
ことができる。At the same time, after immersing the semiconductor wafer 1 in the cleaning liquid 3, the gas 7 is caused to flow out from the nozzle 6 to form an air flow 11 in the direction opposite to the nozzle 6 as shown in FIG. Convection 12 is generated on the water surface. Thereby, even when the foreign matter 8 is stagnant near the center of the cleaning tank 2 as in the conventional case, the foreign matter 8 is pushed out to the periphery of the cleaning tank 2 by the flow 11 of the gas 7 and by the convection 12 on the water surface. It can be moved to the periphery of the cleaning tank 2 and flow out of the cleaning tank 2 together with the overflowing cleaning liquid 3.
【００２４】そして、洗浄終了後に、洗浄槽２の水面上
の異物８が除去された状態でウェハカセット９を洗浄槽
２から引き上げ、ウェハカセット９に収納された状態に
おいて複数枚の半導体ウェハ１を次の処理位置まで搬送
する。この場合に、ノズル６からの気体７の流出を停止
させ、半導体ウェハ１の生乾きを防止することができ
る。以上の動作を繰り返し、半導体ウェハ１の洗浄をウ
ェハカセット９単位で実行する。After the cleaning, the wafer cassette 9 is lifted from the cleaning tank 2 with the foreign matter 8 on the water surface of the cleaning tank 2 removed, and the plurality of semiconductor wafers 1 are stored in the wafer cassette 9. Transport to the next processing position. In this case, the outflow of the gas 7 from the nozzle 6 can be stopped to prevent the semiconductor wafer 1 from being dried. By repeating the above operation, the cleaning of the semiconductor wafer 1 is executed for each wafer cassette 9.
【００２５】従って、本実施例の洗浄槽２によれば、洗
浄液３の水面上に気体７の流れ１１を作り、かつ水面付
近に対流１２を発生させることにより、停滞する異物８
を洗浄液３と共にオーバーフローさせることができるの
で、洗浄液３の水面上に異物８が停留することがなく、
半導体ウェハ１の洗浄槽２への出し入れ時に異物８の付
着を防止することができる。Therefore, according to the cleaning tank 2 of this embodiment, the stagnant foreign matter 8 is generated by forming the flow 11 of the gas 7 on the water surface of the cleaning liquid 3 and generating the convection 12 near the water surface.
Since the cleaning liquid 3 can be overflowed together with the cleaning liquid 3, the foreign matter 8 does not remain on the water surface of the cleaning liquid 3,
It is possible to prevent the foreign matter 8 from adhering when the semiconductor wafer 1 is taken in and out of the cleaning tank 2.
【００２６】以上、本発明者によってなされた発明を実
施例に基づき具体的に説明したが、本発明は前記実施例
に限定されるものではなく、その要旨を逸脱しない範囲
で種々変更可能であることはいうまでもない。The invention made by the present inventor has been specifically described above based on the embodiments, but the present invention is not limited to the embodiments and can be variously modified without departing from the scope of the invention. Needless to say.
【００２７】たとえば、ノズル６からの気体７の流出に
ついては、気体７の圧力および流量を調整することも可
能であり、この場合には気体７を最適な条件で流出する
ことができるので、停滞している異物８を確実に除去す
ることができる。For example, with respect to the outflow of the gas 7 from the nozzle 6, it is possible to adjust the pressure and the flow rate of the gas 7, and in this case, the gas 7 can be outflowed under the optimum conditions, so that the gas is stagnant. It is possible to reliably remove the foreign matter 8 that is being removed.
【００２８】また、気体７についても、エアーまたはＮ
2 などに限定されるものではなく、特に反応性の低い不
活性ガスなどについても広く適用可能である。The gas 7 is also air or N.
The present invention is not limited to 2 and the like, and can be widely applied to inert gas with low reactivity.
【００２９】さらに、ノズル６の角度、位置および構
造、そして気体７の流出口の形状などについても、効率
的かつ確実な異物８の除去が可能となるように調整およ
び変形可能であることは言うまでもない。Further, it is needless to say that the angle, position and structure of the nozzle 6 and the shape of the outlet of the gas 7 can be adjusted and deformed so that the foreign matter 8 can be removed efficiently and surely. Yes.
【００３０】以上の説明では、主として本発明者によっ
てなされた発明をその利用分野であるＬＳＩ製造工程に
おける半導体ウェハ１の洗浄槽２に適用した場合につい
て説明したが、これに限定されるものではなく、たとえ
ば磁気ディスクなどの他の被洗浄物の洗浄槽についても
広く適用可能である。In the above description, the invention mainly made by the present inventor is applied to the cleaning tank 2 for the semiconductor wafer 1 in the LSI manufacturing process which is the field of use thereof, but the invention is not limited to this. It is also widely applicable to a cleaning tank for other objects to be cleaned such as a magnetic disk.
【００３１】[0031]
【発明の効果】本願において開示される発明のうち、代
表的なものによって得られる効果を簡単に説明すれば、
下記のとおりである。The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.
【００３２】(1).洗浄槽の上部に、この洗浄槽の水面に
沿って気体をブローするノズルを設けることにより、洗
浄槽の中央付近に停滞している異物を洗浄槽の周辺に押
し出したり、または洗浄槽の中央付近の水面上に起こる
対流で洗浄槽の周辺に移動させることができるので、洗
浄槽の水面上に停滞している異物を効率良く除去し、被
洗浄物に対する異物の付着防止が可能となる。(1) By providing a nozzle for blowing gas along the water surface of the cleaning tank at the upper part of the cleaning tank, foreign matter stagnant near the center of the cleaning tank can be pushed out to the periphery of the cleaning tank. , Or convection that occurs on the surface of the water near the center of the cleaning tank can be moved to the periphery of the cleaning tank, so foreign matter that has stagnated on the surface of the cleaning tank can be efficiently removed and foreign matter adheres to the object to be cleaned. Prevention is possible.
【００３３】(2).被洗浄物の出し入れ時に、気体のブロ
ーを停止可能とすることにより、被洗浄物の生乾燥を防
止することができるので、効率の良い洗浄が可能とな
る。(2). When the object to be cleaned can be taken in and out, the blow of gas can be stopped, so that the object to be cleaned can be prevented from being dried, so that efficient cleaning can be performed.
【００３４】(3).気体の圧力および流量、またはノズル
の角度および位置を調整可能とすることにより、気体を
最適な条件でブローすることができるので、洗浄槽に停
滞している異物をより一層効率良く、かつ確実に除去す
ることが可能となる。(3) The gas can be blown under optimum conditions by making it possible to adjust the pressure and flow rate of the gas, or the angle and position of the nozzle, so that the foreign matter that has stagnated in the cleaning tank can be further removed. It becomes possible to remove more efficiently and surely.
【００３５】(4).前記(1) 〜(3) により、特にＬＳＩ製
造工程における半導体ウェハの洗浄処理において、半導
体ウェハに対する異物の付着を防止することができるの
で、洗浄効率および歩留りの向上が可能とされる洗浄槽
を得ることができる。(4) Due to the above (1) to (3), it is possible to prevent foreign matters from adhering to the semiconductor wafer, especially in the semiconductor wafer cleaning process in the LSI manufacturing process, so that the cleaning efficiency and the yield are improved. It is possible to obtain a cleaning bath that is possible.
【図１】本発明の一実施例である洗浄槽を示す概略断面
図である。FIG. 1 is a schematic sectional view showing a cleaning tank which is an embodiment of the present invention.
１ 半導体ウェハ（被洗浄物） ２ 洗浄槽 ３ 洗浄液 ４ 洗浄液供給口 ５ 整流板 ６ ノズル ７ 気体 ８ 異物 ９ ウェハカセット １０，１０ａ，１０ｂ 流れ １１ 流れ １２ 対流 1 semiconductor wafer (object to be cleaned) 2 cleaning tank 3 cleaning liquid 4 cleaning liquid supply port 5 straightening plate 6 nozzle 7 gas 8 foreign matter 9 wafer cassette 10, 10a, 10b flow 11 flow 12 convection
Claims (4)
該洗浄液をオーバーフローさせて前記被洗浄物を洗浄す
る洗浄槽であって、前記洗浄槽の上部に、該洗浄槽の水
面に沿って気体をブローするノズルを設けることを特徴
とする洗浄槽。1. Immersing an object to be cleaned in a cleaning liquid in a cleaning tank,
A cleaning tank for cleaning the object to be cleaned by overflowing the cleaning liquid, wherein a nozzle for blowing gas along the water surface of the cleaning tank is provided above the cleaning tank.
のブローを停止可能とすることを特徴とする請求項１記
載の洗浄槽。2. The cleaning tank according to claim 1, wherein the blowing of the gas can be stopped when the object to be cleaned is put in or taken out.
することを特徴とする請求項１または２記載の洗浄槽。3. The cleaning tank according to claim 1 or 2, wherein the pressure and flow rate of the gas can be adjusted.
とすることを特徴とする請求項１、２または３記載の洗
浄槽。4. The cleaning tank according to claim 1, wherein the angle and position of the nozzle can be adjusted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21349391A JPH0555191A (en) | 1991-08-26 | 1991-08-26 | Cleaning tank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21349391A JPH0555191A (en) | 1991-08-26 | 1991-08-26 | Cleaning tank |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0555191A true JPH0555191A (en) | 1993-03-05 |
Family
ID=16640116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21349391A Pending JPH0555191A (en) | 1991-08-26 | 1991-08-26 | Cleaning tank |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0555191A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5806543A (en) * | 1994-11-15 | 1998-09-15 | Ohmi; Tadahiro | Wet station, and method of and apparatus for wet cleaning using said wet station |
| US5921257A (en) * | 1996-04-24 | 1999-07-13 | Steag Microtech Gmbh | Device for treating substrates in a fluid container |
| KR20010070779A (en) * | 2001-06-07 | 2001-07-27 | 박용석 | Rectangular nozzle apparatus for cleaning glass substarte for liquid crystal display |
| WO2015114762A1 (en) | 2014-01-29 | 2015-08-06 | 三菱重工メカトロシステムズ株式会社 | Electrostatic precipitator, charge control program for electrostatic precipitator, and charge control method for electrostatic precipitator |
-
1991
- 1991-08-26 JP JP21349391A patent/JPH0555191A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5806543A (en) * | 1994-11-15 | 1998-09-15 | Ohmi; Tadahiro | Wet station, and method of and apparatus for wet cleaning using said wet station |
| US5921257A (en) * | 1996-04-24 | 1999-07-13 | Steag Microtech Gmbh | Device for treating substrates in a fluid container |
| KR20010070779A (en) * | 2001-06-07 | 2001-07-27 | 박용석 | Rectangular nozzle apparatus for cleaning glass substarte for liquid crystal display |
| WO2015114762A1 (en) | 2014-01-29 | 2015-08-06 | 三菱重工メカトロシステムズ株式会社 | Electrostatic precipitator, charge control program for electrostatic precipitator, and charge control method for electrostatic precipitator |
| KR20160104697A (en) | 2014-01-29 | 2016-09-05 | 미츠비시 히타치 파워 시스템즈 칸쿄 솔루션 가부시키가이샤 | Electrostatic precipitator, charge control program for electrostatic precipitator, and charge control method for electrostatic precipitator |
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