JPH055587A - Cylindrical heating device and semiconductor manufacturing method - Google Patents

Abstract

PURPOSE:To improve quality, reliability and productivity of a product particularly in manufacture of semiconductor by extending a uniform temperature range in a heating furnace. CONSTITUTION:Self-sealable heat insulating members 3 for supporting a reaction tube 2, are provided at both ends of a cylindrical heating furnace 1. The member 3 has a driver which has a plurality of circular-arc-shaped heat insulators 4 each having an axis coincident with the axis of the furnace 1 as an elastic heat insulating layer 4' provided on the circular-arc surface in contact with end faces in contact with each other and with the reaction tube to move radially in the furnace 1 along housings 5 installed at both ends of the furnace 1.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION This invention relates to cylindrical heating devices, and more particularly to heat sealing of heating devices useful in semiconductor manufacturing. In recent years, with high integration of semiconductor devices, precise control of each parameter has been required. In particular, in the chemical vapor deposition and impurity diffusion steps, it is necessary to maintain the inside of the reaction tube at a predetermined temperature and evenly in order to improve product quality and reliability. To this end, it is necessary to improve the heat sealing between the heating device and the reaction tube at both ends, reduce the temperature difference between the central portion and both ends of the furnace, and make the uniform heating region as long as possible.

[0002]

2. Description of the Related Art In a conventional cylindrical heating furnace in which a reaction tube is inserted and heated, quartz wool or the like is packed in a gap between the reaction tube at the end of the furnace to prevent inflow of outside air and release of heat from the furnace. .. However, in this method, it takes time to attach and detach the reaction tube, which causes uneven temperature distribution in the reaction tube, which causes variations in the quality of semiconductor products and limits the soaking length in the reaction tube. It was a factor that hindered the improvement of sex.

[0003]

DISCLOSURE OF THE INVENTION The present invention facilitates the attachment and detachment of a reaction tube and improves the heat sealing of the end portion of a cylindrical heating furnace, thereby expanding the uniform temperature region in the reaction tube and manufacturing it. The purpose is to improve the quality and productivity of semiconductors.

[0004]

[Means for Solving the Problems] The above problem has a self-sealing heat insulating member 3 for supporting a reaction tube 2 at both ends of a cylindrical heating furnace 1. A plurality of arc-shaped heat insulating materials 4 each having an axis coinciding with the axis, with elastic heat insulating layers 4 ′ attached to the end surfaces contacting each other and the arc surfaces contacting the reaction tube, and installed at both ends of the heating furnace 1. A drive unit 7 for moving in the radial direction of the heating furnace 1 along the guide 5,
It can be solved by a cylindrical heating device characterized by having 8; 9.

[0005]

In the cylindrical heating device 1 according to the embodiment of the present invention shown in a schematic sectional view in FIG. 1, the arc-shaped heat insulating material 4 for sealing the end portion is used for the heating furnace by the shape memory alloy spring 9 of the driving portion. It can move in the radial direction. Therefore, during heating, not only the temperature inside the furnace can be made uniform, but also the reaction tube can be easily attached and detached. In particular, in a semiconductor manufacturing process, a shape memory alloy that operates between vapor phase growth temperature and impurity diffusion temperature and room temperature can be advantageously used if it is developed, but for the time being, the cylinder 7 and the piston 8 can be used as a heat insulating material. 4 may be driven.

[0006]

EXAMPLE 1 A reactor 1 has a heater 12 on a side wall refractory material 11 surrounded by a housing 10, and an end of the furnace has a heat insulating member 3 as shown in FIGS. 2 and 3. .. Guides 5 are provided at both ends of the housing 10, and the self-sealing heat insulating member 3 sandwiched by the guides 5 is supported by a shape memory alloy spring 9 which is a drive unit.

The heat insulating member 3 is composed of four arc-shaped heat insulating materials 4, and has elastic heat insulating layers 4'on the end surfaces which are in contact with each other and the arc surface which is in contact with the reaction tube. At room temperature, the space between the reaction tube and the reaction tube is widened to facilitate the attachment / detachment.

Embodiment 2 As shown in FIGS. 4 and 5, it is the same as the device of Embodiment 1 except that the heat insulating member 3 provided at the end of the furnace is driven by the cylinder 7 and the piston 8. .. This apparatus can introduce a pressurized fluid from a conduit (not shown) into the cylinder 7, drive the piston 8, and move the heat insulating member 3 in the radial direction toward the axis of the reaction furnace 1. In addition, it is advantageous to put a heat insulating padding 6 in the guide 5 to ensure heat insulating property.

Example 3 A cylindrical heating apparatus similar to the apparatus of Example 2 was used, except that the integral structure type reactor shown in FIG. 6 was replaced by the split structure type shown in FIG. A chemical vapor deposition film was formed on a semiconductor substrate.

Wafers are arranged in a reaction tube by a conventional method, and SiH ₄ 200 ml / min and N ₂ O are used as reaction gases.
Flowing 1.5 l / min, keeping the furnace temperature at 500 ℃,
An O ₂ film was formed. The resulting film is homogeneous on every wafer, and the quality and reliability of the final product are high,
Moreover, since the soaking length can be increased, the number of film formations per one time can be increased more than before.

[0011]

According to the present invention, the uniform temperature range region in the cylindrical heating device can be widened and the reaction tube can be easily attached and detached. If it is used for semiconductor production, the product quality and reliability can be improved. Therefore, the work can be simplified and the productivity can be improved.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a cylindrical heating device according to an embodiment of the present invention.

2 is a detailed cross-sectional view of the end of the device of FIG.

3 is a cutaway side view of the end of the device of FIG.

FIG. 4 is a detailed cross-sectional view of an end portion of a cylindrical heating device according to another embodiment of the present invention.

5 is a cutaway side view of the end of the device of FIG.

FIG. 6 is a cutaway perspective view of an end of a monolithic cylindrical reactor.

FIG. 7 is a cutaway perspective view of an end of a split structure type cylindrical reactor.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Cylindrical heating furnace 2 ... Reaction tube 3 ... Self-sealing type heat insulating member 4 ... Arc-shaped heat insulating material 4 '... Elastic heat insulating layer 5 ... Housing 6 ... Heat insulating filling and guide 7 ... Cylinder 8 ... Piston 9 ... Shape memory alloy spring 10 ... Heating furnace outer cylinder 11 ... Side wall refractory material 12 ... Heater

Claims (1)

Claims: 1. A self-sealing heat insulating member (3) for supporting a reaction tube (2) is provided at both ends of a cylindrical heating furnace (1),
The heat insulating member (3) is a plurality of arc-shaped heat insulating materials (4) having an axis coinciding with the axis of the heating furnace (1) and elastically deformed on the end surfaces contacting each other and the arc surfaces contacting the reaction tube. A drive unit (7, 8; 9) provided with a heat insulating layer (4 ') and for moving in the radial direction of the heating furnace (1) along guides (5) installed at both ends of the heating furnace (1). A cylindrical heating device comprising: 2. Device according to claim 1, wherein the drive is a shape memory alloy spring (9). 3. Device according to claim 1, wherein the drive is a cylinder (7) and a piston (8). 4. A method of manufacturing a semiconductor, wherein a heating process for a wafer is performed by using the cylindrical heating device according to claim 3.