JPH0557355B2 - - Google Patents

Info

Publication number
JPH0557355B2
JPH0557355B2 JP59281448A JP28144884A JPH0557355B2 JP H0557355 B2 JPH0557355 B2 JP H0557355B2 JP 59281448 A JP59281448 A JP 59281448A JP 28144884 A JP28144884 A JP 28144884A JP H0557355 B2 JPH0557355 B2 JP H0557355B2
Authority
JP
Japan
Prior art keywords
frequency coil
gas
pressure
induction heating
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59281448A
Other languages
Japanese (ja)
Other versions
JPS61159574A (en
Inventor
Saneya Noda
Yasushi Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP59281448A priority Critical patent/JPS61159574A/en
Publication of JPS61159574A publication Critical patent/JPS61159574A/en
Publication of JPH0557355B2 publication Critical patent/JPH0557355B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高周波誘導加熱によるたて型気相反
応装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vertical gas phase reactor using high frequency induction heating.

〔従来の技術〕[Conventional technology]

気相反応装置において、高周波コイルを用いた
高周波誘導加熱が広く用いられている。例えば、
エピタキシー装置においてこのような高周波誘導
加熱が広く採用されている。
High-frequency induction heating using a high-frequency coil is widely used in gas-phase reactors. for example,
Such high frequency induction heating is widely used in epitaxy equipment.

ところがたて型で高周波誘導加熱により気相反
応させる場合に、減圧式にすると、異常放電の問
題が生じる。
However, when a vertical type is used to perform a gas phase reaction using high-frequency induction heating, if a reduced pressure type is used, the problem of abnormal discharge occurs.

例えば、たて型気相反応装置の1種であるパン
ケーキ型たて型装置は、第3図に示す如く高周波
コイル2′が、ベルジヤ11′(通例石英製)によ
り画成される反応炉1′の内部に位置するため、
炉内圧力を減圧化すると、高周波コイル2′も減
圧下に置かれることになり、従つて異常放電を招
くことになる。異常放電が起こると負荷インピー
ダンスが大きく変化し、放電が不安定となり、発
振機が破損することもある。(第1図中、3′はカ
ーボン支持台、4′はウエハ、5′は石英カバー、
矢印はガスの流れである。) 実際上、炉内圧力を100〜200Torr程度の圧力
にした場合には、放電なしで1100℃以上に加熱す
ることは困難であり、放電の問題は避けられな
い。それ程減圧せず、200Torr以上の圧力の高い
範囲では、放電の問題はあまりないが、減圧式に
するためにはやはり放電の問題を解決する必要が
ある。
For example, a pancake-type vertical reactor, which is a type of vertical gas-phase reactor, is a reactor in which a high-frequency coil 2' is defined by a bell gear 11' (usually made of quartz), as shown in FIG. Since it is located inside 1',
When the pressure inside the furnace is reduced, the high-frequency coil 2' is also placed under reduced pressure, resulting in abnormal discharge. When abnormal discharge occurs, the load impedance changes significantly, the discharge becomes unstable, and the oscillator may be damaged. (In Figure 1, 3' is a carbon support, 4' is a wafer, 5' is a quartz cover,
Arrows are gas flows. ) In practice, when the pressure inside the furnace is set to about 100 to 200 Torr, it is difficult to heat the furnace to over 1100°C without electrical discharge, and the problem of electrical discharge is unavoidable. In a high pressure range of 200 Torr or more, where the pressure is not reduced that much, there is not much of a problem with discharge, but in order to make it a pressure reduction type, it is still necessary to solve the problem of discharge.

結局、従来の高周波誘導加熱による気相反応装
置では、真空度が高くなると(例えばP
100Torrになると)、放電が起こりやすくなるた
め、実際にはP100Torrでの気相成長は困難
で、事実上出来なかつたものである。
As a result, in conventional gas-phase reactors using high-frequency induction heating, when the degree of vacuum increases (for example, P
In practice, vapor phase growth at P100 Torr is difficult and virtually impossible, since discharge is more likely to occur at P100 Torr.

〔発明の目的〕[Purpose of the invention]

本発明は、減圧下での高周波誘導加熱が可能な
たて型気相反応装置を提供することを目的とす
る。
An object of the present invention is to provide a vertical gas phase reactor capable of high-frequency induction heating under reduced pressure.

〔発明の構成〕[Structure of the invention]

本発明の高周波誘導加熱によるたて型気相反応
装置は、気相反応が行われる部分と高周波コイル
が位置する部分とを分けることにより、両部分が
異なる圧力になることを可能ならしめた構成とす
る。
The vertical gas-phase reaction device using high-frequency induction heating of the present invention has a configuration in which the part where the gas-phase reaction is performed and the part where the high-frequency coil is located are separated, allowing the two parts to have different pressures. shall be.

〔発明の作用〕[Action of the invention]

上記構成の結果、気相反応が行われる反応炉
と、異常放電の原因となる高周波コイル部とを分
けたため、炉内を減圧しても、高周波コイル部分
は任意の圧力、即ち炉内圧より高い圧力(例えば
常圧とか、低圧)にできるため、高周波コイルの
位置する部分が減圧化されることで発生していた
異常放電を防止できる。このため、減圧下での高
周波誘導加熱による気相反応が可能となる。
As a result of the above configuration, the reactor where the gas phase reaction takes place is separated from the high-frequency coil section that causes abnormal discharge, so even if the pressure inside the furnace is reduced, the high-frequency coil section will be at an arbitrary pressure, that is, higher than the furnace internal pressure. Since the pressure can be maintained at normal pressure or low pressure, it is possible to prevent abnormal discharge that would otherwise occur due to reduced pressure in the area where the high-frequency coil is located. Therefore, a gas phase reaction by high frequency induction heating under reduced pressure becomes possible.

合わせて、上記両部分の分離により、炉そのも
のの容量を小さくすることも可能となり、このた
め一般に石英から造られるベルジヤを小さくでき
る。かつ、炉内パージが短くできる。また、高周
波コイルから汚染物質たる金属が炉内に入ること
が抑制でき、ウエハなどが金属によつて汚染され
ることを防止できる。かつ、高周波コイル部のパ
ージガスを、安い窒素にすることもできるように
なる。
In addition, by separating the two parts, the capacity of the furnace itself can be reduced, and therefore the bell gear, which is generally made of quartz, can be made smaller. Moreover, the furnace purge time can be shortened. Further, it is possible to suppress metal contaminants from entering the furnace from the high-frequency coil, and it is possible to prevent wafers and the like from being contaminated by metal. In addition, the purge gas for the high-frequency coil section can be replaced by inexpensive nitrogen.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例について、図面を参照
して説明する。
An embodiment of the present invention will be described below with reference to the drawings.

第1図に示すのは、本発明をいわゆるパンケー
キ型たて型炉に適用した例である。
FIG. 1 shows an example in which the present invention is applied to a so-called pancake-type vertical furnace.

本例においては、反応炉1の外側に高周波コイ
ル2を設置することにより、気相反応が行われる
反応炉1と、高周波コイル2が位置する部分とを
分ける。
In this example, by installing the high-frequency coil 2 outside the reactor 1, the reactor 1 where the gas phase reaction is performed is separated from the part where the high-frequency coil 2 is located.

加熱すべきウエハ等を載置するグラフアイト・
サセプタ3は、ワークコイルである高周波コイル
2に近接するように、炉内に設置する。
Graphite on which wafers etc. to be heated are placed
The susceptor 3 is installed in the furnace so as to be close to the high frequency coil 2, which is a work coil.

本例ではステンレスベルジヤ11a(水冷式)
と、石英製インナーベルジヤ11とにより反応炉
1が構成されており、石英ノズル4から反応ガス
(水素やシラン系ガス)が炉内に送られる構成に
なつている。
In this example, stainless steel bell gear 11a (water-cooled type)
and a quartz inner bell gear 11 constitute a reactor 1, and a reactant gas (hydrogen or silane gas) is sent into the reactor from a quartz nozzle 4.

上記のように、高周波コイル2を反応炉1の外
側に設置することにより両者を分離したので、減
圧下で気相反応を行わせることができ、しかもそ
の場合でも高周波コイル2はその減圧の影響を受
けないので、放電などの問題は生じない。従つ
て、反応を100Torr以下の減圧条件で行つても、
高周波コイル2は常圧(乃至は低圧)下に置くこ
とができ、減圧下での気相反応が可能となる。
As mentioned above, the high-frequency coil 2 is installed outside the reactor 1 to separate the two, so the gas phase reaction can be performed under reduced pressure, and even in that case, the high-frequency coil 2 is affected by the effect of the reduced pressure Therefore, problems such as discharge do not occur. Therefore, even if the reaction is carried out under reduced pressure conditions of 100 Torr or less,
The high frequency coil 2 can be placed under normal pressure (or low pressure), allowing gas phase reactions to occur under reduced pressure.

本例の構成にあつては、高周波コイル2から汚
染物質たる金属が炉内に入ることも抑制できウエ
ハなどが金属によつて汚染されることを防止でき
る。高周波コイル部のパージガスを、安い窒素に
することもできる。また、高周波コイル2を外に
出した分、たて方向(第1図の上下方向)の長さ
を小さくしてもよいので、炉そのものの容量を小
さくすることも可能である。このためベルジヤ
(特に石英製ベルジヤ11)を小さくできて有利
である。かつ、炉内パージが短くできる。
With the configuration of this example, it is possible to suppress metal contaminants from entering the furnace from the high frequency coil 2, and to prevent wafers and the like from being contaminated by metal. Cheap nitrogen can also be used as the purge gas for the high frequency coil section. Furthermore, since the length of the high-frequency coil 2 in the vertical direction (vertical direction in FIG. 1) may be reduced by extending the high-frequency coil 2 to the outside, it is also possible to reduce the capacity of the furnace itself. Therefore, it is advantageous that the bell gear (especially the quartz bell gear 11) can be made small. Moreover, the furnace purge time can be shortened.

第2図に示すのは、本発明の別の実施例であ
る。この例は、ベルジヤ11,11aで画成され
る空間内に、特に高周波コイル2の収納部21を
形成し、この収納部21を気相反応が行われる反
応部分1aとを気密に隔絶して、双方の圧力が異
なることを可能としたものである。
Shown in FIG. 2 is another embodiment of the invention. In this example, a storage section 21 for the high-frequency coil 2 is formed in a space defined by the bell gears 11 and 11a, and this storage section 21 is airtightly isolated from the reaction section 1a where the gas phase reaction is performed. , which made it possible for the pressures on both sides to be different.

本例も、前記例と同様の作用効果を示す。かつ
本例では、高周波コイル2の部分の圧力の制御が
一層確実にできる。第2図中、前記例と同様の構
成部分については、同じ符号を付した。
This example also exhibits the same effects as the previous example. In addition, in this example, the pressure in the high frequency coil 2 can be controlled more reliably. In FIG. 2, the same reference numerals are given to the same components as in the above example.

なお当然のことではあるが、本発明は図示した
例にのみ限定されるものではない。
It should be noted that, as a matter of course, the present invention is not limited to the illustrated example.

〔発明の効果〕〔Effect of the invention〕

上述の如く、本発明のたて型気相反応装置は、
高周波コイルの放電の問題を解決して、減圧下で
の高周波誘導加熱による気相反応が可能となつた
ものである。
As mentioned above, the vertical gas phase reactor of the present invention includes:
By solving the problem of high-frequency coil discharge, it became possible to perform gas-phase reactions using high-frequency induction heating under reduced pressure.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図は、各々本発明の一実施例を
示す断面図である。第3図は従来例を示す。 1,1a……反応炉(気相反応部)、2……高
周波コイル、21……高周波コイル収納部。
FIG. 1 and FIG. 2 are sectional views each showing an embodiment of the present invention. FIG. 3 shows a conventional example. 1, 1a... Reaction furnace (gas phase reaction section), 2... High frequency coil, 21... High frequency coil storage section.

Claims (1)

【特許請求の範囲】 1 高周波誘導加熱によるたて型気相反応装置に
おいて、気相反応が行われる部分と高周波コイル
が位置する部分とを分けることにより、両部分が
異なる圧力になることを可能ならしめた高周波誘
導加熱気相反応装置。 2 気相反応が行われる反応炉内を減圧し、かつ
高周波コイルを常圧下または炉内圧より高い圧力
下とした特許請求の範囲第1項記載の高周波誘導
加熱気相反応装置。
[Claims] 1. In a vertical gas phase reaction device using high frequency induction heating, by separating the part where the gas phase reaction takes place and the part where the high frequency coil is located, it is possible to have different pressures in both parts. A well-developed high-frequency induction heating gas phase reactor. 2. The high-frequency induction heating gas-phase reactor according to claim 1, wherein the pressure inside the reactor in which the gas-phase reaction is carried out is reduced, and the high-frequency coil is placed under normal pressure or under a pressure higher than the pressure inside the furnace.
JP59281448A 1984-12-31 1984-12-31 Reactor for vapor phase reaction by high frequency induction heating Granted JPS61159574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59281448A JPS61159574A (en) 1984-12-31 1984-12-31 Reactor for vapor phase reaction by high frequency induction heating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59281448A JPS61159574A (en) 1984-12-31 1984-12-31 Reactor for vapor phase reaction by high frequency induction heating

Publications (2)

Publication Number Publication Date
JPS61159574A JPS61159574A (en) 1986-07-19
JPH0557355B2 true JPH0557355B2 (en) 1993-08-23

Family

ID=17639313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59281448A Granted JPS61159574A (en) 1984-12-31 1984-12-31 Reactor for vapor phase reaction by high frequency induction heating

Country Status (1)

Country Link
JP (1) JPS61159574A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1271233B (en) * 1994-09-30 1997-05-27 Lpe EPITAXIAL REACTOR EQUIPPED WITH FLAT DISCOID SUSCEPECTOR AND HAVING GAS FLOW PARALLEL TO THE SUBSTRATES
US6002109A (en) 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
CN102277603A (en) * 2011-08-03 2011-12-14 深圳大学 Device and method of preparing coating or thin film by virtue of induction heating/electro-deposition

Also Published As

Publication number Publication date
JPS61159574A (en) 1986-07-19

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