JPH0559990B2 - - Google Patents

Info

Publication number: JPH0559990B2
Authority: JP; Japan
Prior art keywords: thin film; temperature; sample substrate; compound gas; light
Prior art date: 1985-06-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP14173185A

Other languages

English (en)

Japanese (ja)

Other versions

JPS624871A (ja

Inventor

Hiroyuki Yokoyama

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-06-28

Filing date

1985-06-28

Publication date

1993-09-01

1985-06-28 Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd

1985-06-28 Priority to JP14173185A priority Critical patent/JPS624871A/ja

1987-01-10 Publication of JPS624871A publication Critical patent/JPS624871A/ja

1993-09-01 Publication of JPH0559990B2 publication Critical patent/JPH0559990B2/ja

Status Granted legal-status Critical Current

Links

239000010409 thin film Substances 0.000 claims description 57
239000000758 substrate Substances 0.000 claims description 46
238000006243 chemical reaction Methods 0.000 claims description 36
150000001875 compounds Chemical class 0.000 claims description 30
238000000034 method Methods 0.000 claims description 28
230000005284 excitation Effects 0.000 claims description 26
238000010438 heat treatment Methods 0.000 claims description 17
238000000059 patterning Methods 0.000 claims description 13
230000015572 biosynthetic process Effects 0.000 claims description 12
230000001678 irradiating effect Effects 0.000 claims description 9
230000000977 initiatory effect Effects 0.000 claims description 6
238000001704 evaporation Methods 0.000 claims description 2
239000010408 film Substances 0.000 description 28
239000007789 gas Substances 0.000 description 22
238000002230 thermal chemical vapour deposition Methods 0.000 description 12
238000000151 deposition Methods 0.000 description 7
230000000694 effects Effects 0.000 description 7
239000002184 metal Substances 0.000 description 6
229910052751 metal Inorganic materials 0.000 description 6
239000004065 semiconductor Substances 0.000 description 6
230000008021 deposition Effects 0.000 description 5
238000010586 diagram Methods 0.000 description 5
239000012212 insulator Substances 0.000 description 4
238000006552 photochemical reaction Methods 0.000 description 4
238000005516 engineering process Methods 0.000 description 3
238000004519 manufacturing process Methods 0.000 description 3
235000008529 Ziziphus vulgaris Nutrition 0.000 description 2
244000126002 Ziziphus vulgaris Species 0.000 description 2
238000003795 desorption Methods 0.000 description 2
150000002739 metals Chemical class 0.000 description 2
238000000206 photolithography Methods 0.000 description 2
239000010453 quartz Substances 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
230000005068 transpiration Effects 0.000 description 2
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
125000000217 alkyl group Chemical group 0.000 description 1
150000001728 carbonyl compounds Chemical class 0.000 description 1
238000005234 chemical deposition Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
150000004820 halides Chemical class 0.000 description 1
150000004678 hydrides Chemical class 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
230000001939 inductive effect Effects 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
230000006911 nucleation Effects 0.000 description 1
238000010899 nucleation Methods 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
229920002120 photoresistant polymer Polymers 0.000 description 1
238000005240 physical vapour deposition Methods 0.000 description 1
239000002994 raw material Substances 0.000 description 1
238000001179 sorption measurement Methods 0.000 description 1
241000894007 species Species 0.000 description 1

Landscapes

Chemical Vapour Deposition (AREA)

JP14173185A 1985-06-28 1985-06-28 光照射薄膜パタ−ニング方法 Granted JPS624871A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP14173185A JPS624871A (ja)	1985-06-28	1985-06-28	光照射薄膜パタ−ニング方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP14173185A JPS624871A (ja)	1985-06-28	1985-06-28	光照射薄膜パタ−ニング方法

Publications (2)

Publication Number	Publication Date
JPS624871A JPS624871A (ja)	1987-01-10
JPH0559990B2 true JPH0559990B2 (de)	1993-09-01

Family

ID=15298897

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP14173185A Granted JPS624871A (ja)	1985-06-28	1985-06-28	光照射薄膜パタ−ニング方法

Country Status (1)

Country	Link
JP (1)	JPS624871A (de)

1985
- 1985-06-28 JP JP14173185A patent/JPS624871A/ja active Granted

Also Published As

Publication number	Publication date
JPS624871A (ja)	1987-01-10

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