JPH0562454B2 - - Google Patents

Info

Publication number
JPH0562454B2
JPH0562454B2 JP58200989A JP20098983A JPH0562454B2 JP H0562454 B2 JPH0562454 B2 JP H0562454B2 JP 58200989 A JP58200989 A JP 58200989A JP 20098983 A JP20098983 A JP 20098983A JP H0562454 B2 JPH0562454 B2 JP H0562454B2
Authority
JP
Japan
Prior art keywords
growth
vapor phase
epitaxial
phase growth
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58200989A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6094723A (ja
Inventor
Yukio Noda
Yukitoshi Kushiro
Juichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP58200989A priority Critical patent/JPS6094723A/ja
Publication of JPS6094723A publication Critical patent/JPS6094723A/ja
Publication of JPH0562454B2 publication Critical patent/JPH0562454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Chemical Vapour Deposition (AREA)
JP58200989A 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置 Granted JPS6094723A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58200989A JPS6094723A (ja) 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58200989A JPS6094723A (ja) 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Publications (2)

Publication Number Publication Date
JPS6094723A JPS6094723A (ja) 1985-05-27
JPH0562454B2 true JPH0562454B2 (da) 1993-09-08

Family

ID=16433650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58200989A Granted JPS6094723A (ja) 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Country Status (1)

Country Link
JP (1) JPS6094723A (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060272577A1 (en) * 2005-06-03 2006-12-07 Ming Mao Method and apparatus for decreasing deposition time of a thin film
JP7660816B2 (ja) * 2021-10-12 2025-04-14 国立研究開発法人産業技術総合研究所 高性能多接合太陽電池の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352356A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Deposition prevention method in hot wall type reaction furnace

Also Published As

Publication number Publication date
JPS6094723A (ja) 1985-05-27

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