JPS6094723A - 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置 - Google Patents

化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Info

Publication number
JPS6094723A
JPS6094723A JP58200989A JP20098983A JPS6094723A JP S6094723 A JPS6094723 A JP S6094723A JP 58200989 A JP58200989 A JP 58200989A JP 20098983 A JP20098983 A JP 20098983A JP S6094723 A JPS6094723 A JP S6094723A
Authority
JP
Japan
Prior art keywords
growth
chamber
vapor phase
inert gas
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58200989A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0562454B2 (da
Inventor
Yukio Noda
野田　行雄
Yukitoshi Kushiro
久代　行俊
Yuichi Matsushima
松島　裕一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP58200989A priority Critical patent/JPS6094723A/ja
Publication of JPS6094723A publication Critical patent/JPS6094723A/ja
Publication of JPH0562454B2 publication Critical patent/JPH0562454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Chemical Vapour Deposition (AREA)
JP58200989A 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置 Granted JPS6094723A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58200989A JPS6094723A (ja) 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58200989A JPS6094723A (ja) 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Publications (2)

Publication Number Publication Date
JPS6094723A true JPS6094723A (ja) 1985-05-27
JPH0562454B2 JPH0562454B2 (da) 1993-09-08

Family

ID=16433650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58200989A Granted JPS6094723A (ja) 1983-10-28 1983-10-28 化合物半導体多層構造のエピタキシヤル気相成長方法及び装置

Country Status (1)

Country Link
JP (1) JPS6094723A (da)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006132920A1 (en) * 2005-06-03 2006-12-14 Veeco Instruments, Inc. Method and apparatus for decreasing deposition time of a thin film
JP2023057589A (ja) * 2021-10-12 2023-04-24 国立研究開発法人産業技術総合研究所 高性能多接合太陽電池の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352356A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Deposition prevention method in hot wall type reaction furnace

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352356A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Deposition prevention method in hot wall type reaction furnace

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006132920A1 (en) * 2005-06-03 2006-12-14 Veeco Instruments, Inc. Method and apparatus for decreasing deposition time of a thin film
JP2023057589A (ja) * 2021-10-12 2023-04-24 国立研究開発法人産業技術総合研究所 高性能多接合太陽電池の製造方法

Also Published As

Publication number Publication date
JPH0562454B2 (da) 1993-09-08

Similar Documents

Publication Publication Date Title
KR970008339B1 (ko) 화학증착에 의한 과포화 희토류 원소 도핑 반도체층
US4181544A (en) Molecular beam method for processing a plurality of substrates
US5410167A (en) Semiconductor device with reduced side gate effect
US4883020A (en) Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor
US4239955A (en) Effusion cells for molecular beam epitaxy apparatus
JPH06132236A (ja) 半導体装置の製造方法
US4608097A (en) Method for producing an electronically passivated surface on crystalline silicon using a fluorination treatment and an organic overlayer
Kukimoto et al. Selective area control of material properties in laser-assisted MOVPE of GaAs and AlGaAs
US4948751A (en) Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor
US3994755A (en) Liquid phase epitaxial process for growing semi-insulating GaAs layers
US5122482A (en) Method for treating surface of silicon
JP2002539327A (ja) 基板表面への金属酸化物の化学的気相成長法による成膜方法および装置
JPH0562454B2 (da)
US4028147A (en) Liquid phase epitaxial process for growing semi-insulating GaAs layers
JP2642096B2 (ja) 化合物半導体薄膜の形成方法
JPH05145093A (ja) 半導体結晶への水銀拡散法
JP2656029B2 (ja) 結晶成長装置
JPS62214616A (ja) 有機金属気相成長装置
GB2202236A (en) Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition
KR100942146B1 (ko) 펄스 가스 유동 증착방법, 그 장치 및 이를 이용한에피택셜 웨이퍼의 제작 방법
US20060243195A1 (en) Epitaxy with compliant layers of group-V species
Miyata et al. Intermittent ultraviolet irradiation for silicon selective epitaxial growth
KR20040070255A (ko) 비 ⅲ-ⅴ 기판상의 ⅲ-ⅴ 반도체층 증착방법
JPH04252023A (ja) シリコン結晶の選択的成長方法
JP2577543B2 (ja) 単結晶薄膜成長装置