JPH0563012B2 - - Google Patents

Info

Publication number
JPH0563012B2
JPH0563012B2 JP61049637A JP4963786A JPH0563012B2 JP H0563012 B2 JPH0563012 B2 JP H0563012B2 JP 61049637 A JP61049637 A JP 61049637A JP 4963786 A JP4963786 A JP 4963786A JP H0563012 B2 JPH0563012 B2 JP H0563012B2
Authority
JP
Japan
Prior art keywords
semiconductor
film
mask
layer
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61049637A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62206880A (ja
Inventor
Masaki Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP61049637A priority Critical patent/JPS62206880A/ja
Publication of JPS62206880A publication Critical patent/JPS62206880A/ja
Publication of JPH0563012B2 publication Critical patent/JPH0563012B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP61049637A 1986-03-07 1986-03-07 ヘテロバイポ−ラトランジスタの製造方法 Granted JPS62206880A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61049637A JPS62206880A (ja) 1986-03-07 1986-03-07 ヘテロバイポ−ラトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61049637A JPS62206880A (ja) 1986-03-07 1986-03-07 ヘテロバイポ−ラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS62206880A JPS62206880A (ja) 1987-09-11
JPH0563012B2 true JPH0563012B2 (da) 1993-09-09

Family

ID=12836727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61049637A Granted JPS62206880A (ja) 1986-03-07 1986-03-07 ヘテロバイポ−ラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS62206880A (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996029740A1 (fr) * 1995-03-17 1996-09-26 Hitachi, Ltd. Dispositif a semi-conducteur et son procede de production
US6657281B1 (en) * 2000-08-03 2003-12-02 Agere Systems Inc. Bipolar transistor with a low K material in emitter base spacer regions

Also Published As

Publication number Publication date
JPS62206880A (ja) 1987-09-11

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