JPH0563068U - Resin-sealed light emitter - Google Patents
Resin-sealed light emitterInfo
- Publication number
- JPH0563068U JPH0563068U JP010447U JP1044792U JPH0563068U JP H0563068 U JPH0563068 U JP H0563068U JP 010447 U JP010447 U JP 010447U JP 1044792 U JP1044792 U JP 1044792U JP H0563068 U JPH0563068 U JP H0563068U
- Authority
- JP
- Japan
- Prior art keywords
- resin
- light emitting
- light
- sealing resin
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(57)【要約】
【目的】 レンズ径を小さくしたときの正面強度の低下
をなくし、狭指向性および高正面強度を実現する。
【構成】 発光半導体素子2がマウントされる凹部1a
内を、封止用樹脂4よりも屈折率が小さい樹脂5で封止
する。封止用樹脂4と樹脂5との界面を凹面とする。発
光半導体素子2で発せられた光を、封止用樹脂4と樹脂
5との界面で集光して、封止用樹脂4のレンズに導く。
(57) [Abstract] [Purpose] Achieves narrow directivity and high front strength without reducing the front strength when the lens diameter is reduced. [Structure] Recessed portion 1a on which light emitting semiconductor element 2 is mounted
The inside is sealed with a resin 5 having a smaller refractive index than the sealing resin 4. The interface between the sealing resin 4 and the resin 5 is a concave surface. Light emitted from the light emitting semiconductor element 2 is condensed at the interface between the sealing resin 4 and the resin 5 and guided to the lens of the sealing resin 4.
Description
【0001】[0001]
本考案は、発光半導体素子を透光性樹脂で封止した樹脂封止型発光体に関する 。 The present invention relates to a resin-sealed light emitting body in which a light emitting semiconductor element is sealed with a translucent resin.
【0002】[0002]
発光型表示装置等に使用される代表的な樹脂封止型発光体を図5に示す。この 樹脂封止型発光体は、2本のリードフレーム1,1を有する。一方のリードフレ ーム1の先端部には、凹部1aが設けられており、ここにマウントされた発光半 導体素子2が、他方のリードフレーム1に対してワイヤボンディングされている 。そして、凹部1a内の発光半導体素子2を中心にして、リードフレーム1,1 の先端部が封止用樹脂4内に埋め込まれている。封止用樹脂4は、先端面が半球 状に形成されて、集光用の凸レンズを構成している。 FIG. 5 shows a typical resin-sealed light-emitting body used in a light-emitting display device and the like. This resin-sealed light emitter has two lead frames 1, 1. A recess 1a is provided at the tip of one of the lead frames 1, and the light emitting semiconductor element 2 mounted therein is wire-bonded to the other lead frame 1. Then, with the light emitting semiconductor element 2 in the recess 1a as the center, the tip portions of the lead frames 1, 1 are embedded in the sealing resin 4. The end surface of the sealing resin 4 is formed in a hemispherical shape to form a convex lens for condensing light.
【0003】 発光半導体素子2あるいは素子マウント部の凹部1aから発する光は、封止用 樹脂4により構成されたレンズにより集光されて、所望の指向性および正面強度 を示す。このレンズによる集光は、L値(発光面からレンズ中心までの距離)と レンズ径に支配される。指向性および正面強度は、この2因子によりほぼ決定さ れ、一般には、光が全てレンズ内に入る場合においては、レンズ径が小さくなる に連れて指向性が次第に狭くなり、正面強度が上がる。図6にこの指向特性を示 す。レンズ径と指向性との関係を利用して、図7に示すように、封止用樹脂4の 正面の中央部のみをレンズ4aにした狭指向性、高正面強度の樹脂封止型発光体 も開発されている。Light emitted from the light emitting semiconductor element 2 or the concave portion 1a of the element mounting portion is condensed by the lens formed of the sealing resin 4 and exhibits desired directivity and frontal strength. Condensation by this lens is governed by the L value (distance from the light emitting surface to the center of the lens) and the lens diameter. The directivity and the frontal strength are substantially determined by these two factors. Generally, when all the light enters the lens, the directivity gradually narrows and the frontal strength increases as the lens diameter decreases. Figure 6 shows this directional pattern. Utilizing the relationship between the lens diameter and the directivity, as shown in FIG. 7, a resin-sealed light-emitting body having a narrow directivity and a high front strength, in which only the central portion of the front surface of the sealing resin 4 is a lens 4a. Has also been developed.
【0004】[0004]
しかしながら、従来の樹脂封止型発光体では、レンズ径がある値を越えて小さ くなると、発光半導体素子あるいは素子マウント部の凹部から発する光の一部が レンズに入射しなくなる(図7参照)。その結果、正面強度の低下を招く。また 、電極が中心に位置する発光半導体素子を使用した場合、素子の電極部分が発光 しないので、レンズ径を小さくして指向性を狭めると、その指向性が、図8に示 すような2山型となる。従って、この場合も正面強度が低下する。 However, in the conventional resin-sealed light-emitting body, when the lens diameter becomes smaller than a certain value, a part of the light emitted from the recess of the light-emitting semiconductor element or the element mount part does not enter the lens (see FIG. 7). .. As a result, the front strength is reduced. In addition, when a light emitting semiconductor element whose electrode is located at the center is used, the electrode portion of the element does not emit light. Therefore, if the lens diameter is reduced to narrow the directivity, the directivity becomes 2 as shown in FIG. It becomes a mountain type. Therefore, also in this case, the front strength is lowered.
【0005】 本考案はかかる事情に鑑みて創案されたものであり、レンズ径を小さくした場 合の正面強度の低下を防ぐことができる樹脂封止型発光体を提供することを目的 とする。The present invention was devised in view of such circumstances, and an object of the present invention is to provide a resin-sealed light emitting body capable of preventing a decrease in frontal strength when the lens diameter is reduced.
【0006】[0006]
本考案にかかる樹脂封止型発光体は、凹部内に発光半導体素子がマウントされ た樹脂封止型発光体において、前記凹部内を、封止用樹脂よりも低屈折率の樹脂 により封止し、その樹脂と前記封止用樹脂との界面を、発光半導体素子の側に窪 ませた凹面としたことを特徴としている。 The resin-sealed light-emitting device according to the present invention is a resin-sealed light-emitting device in which a light-emitting semiconductor element is mounted in the recess, and the recess is sealed with a resin having a lower refractive index than the sealing resin. The interface between the resin and the sealing resin is a concave surface that is recessed toward the light emitting semiconductor element side.
【0007】[0007]
以下、図面を参照して本考案の実施例を説明する。図1は本考案の一実施例を 示す樹脂封止型発光体の縦断面図、図2は図1の樹脂封止型発光体の指向特性を 示すグラフである。 Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a vertical cross-sectional view of a resin-sealed light emitting body showing an embodiment of the present invention, and FIG. 2 is a graph showing directional characteristics of the resin-sealed light emitting body of FIG.
【0008】 樹脂封止型発光体は、2本のリードフレーム1,1を有する。一方のリードフ レーム1の先端部には、凹部1aが設けられており、ここにマウントされた発光 半導体素子2が、他方のリードフレーム1に対して金線3によりワイヤボンディ ングされている。リードフレーム1,1の先端部は、凹部1a内を除き、封止用 樹脂4内に埋め込まれている。封止用樹脂4は、凹部1aの正面に位置する先端 面中央部が半球状に突出されて、集光用の小径凸レンズ4aを構成している。封 止用樹脂4の屈折率は、例えば1.5である。The resin-sealed light emitting body has two lead frames 1, 1. A recess 1a is provided at the tip of one lead frame 1, and the light emitting semiconductor element 2 mounted therein is wire bonded to the other lead frame 1 by a gold wire 3. The tip portions of the lead frames 1 and 1 are embedded in the sealing resin 4 except in the recess 1a. The encapsulating resin 4 has a semi-spherical projection at the center of the tip surface located in front of the concave portion 1a to form a small-diameter convex lens 4a for condensing light. The refractive index of the sealing resin 4 is, for example, 1.5.
【0009】 リードフレーム1の凹部1a内には、封止用樹脂4よりも低屈折率の樹脂5が 充填されている。封止用樹脂4の屈折率が1.5の場合、樹脂5としては、応力 緩和用のプリコート樹脂(屈折率1.4)を使用することができる。樹脂5は、 凹部1a内の発光半導体素子2を封止し、封止用樹脂4に密着している。封止用 樹脂4と樹脂5との界面は、発光半導体素子2の側に窪んだ凹面になっている。 この凹面は、例えば樹脂5の表面張力を利用して形成することができる。A resin 5 having a lower refractive index than the sealing resin 4 is filled in the recess 1 a of the lead frame 1. When the sealing resin 4 has a refractive index of 1.5, a stress-releasing pre-coat resin (refractive index 1.4) can be used as the resin 5. The resin 5 seals the light emitting semiconductor element 2 in the recess 1 a and is in close contact with the sealing resin 4. The interface between the sealing resin 4 and the resin 5 is a concave surface that is recessed toward the light emitting semiconductor element 2 side. This concave surface can be formed by utilizing the surface tension of the resin 5, for example.
【0010】 本樹脂封止型発光体において、発光半導体素子2から発した光は、直接あるい は凹部1aの内面で反射して、凹部1a内の樹脂5を通過し、封止用樹脂4に入 射する。封止用樹脂4と樹脂5との界面は、凹面になっており、且つ、樹脂5の 屈折率は、封止用樹脂4の屈折率よりも小さいので、樹脂5から封止用樹脂4に 入射する光は、界面で集光される。つまり、樹脂5は集光用疑似レンズとして機 能する。そのため、従来の樹脂封止型発光体では封止用樹脂4のレンズ4aから はみ出す光も、レンズ4a内に導くことができる。従って、レンズ径を小さくし た場合の正面強度の低下が防止され、狭指向性および高正面強度が実現される。 また、発光半導体素子2の中心に電極が位置する場合でも、封止用樹脂4と樹脂 5との界面の集光機能により、指向性の2山傾向(図8参照)が緩和され、正面 強度の増加が図られる。In this resin-sealed light-emitting body, the light emitted from the light-emitting semiconductor element 2 is reflected directly or on the inner surface of the recess 1 a, passes through the resin 5 in the recess 1 a, and is sealed by the sealing resin 4. Inject into. Since the interface between the sealing resin 4 and the resin 5 is a concave surface, and the refractive index of the resin 5 is smaller than that of the sealing resin 4, the resin 5 is changed to the sealing resin 4. The incident light is condensed at the interface. That is, the resin 5 functions as a condensing pseudo lens. Therefore, in the conventional resin-sealed light-emitting body, the light protruding from the lens 4a of the sealing resin 4 can also be guided into the lens 4a. Therefore, it is possible to prevent a decrease in frontal strength when the lens diameter is reduced, and to realize narrow directivity and high frontal strength. Even when the electrode is located at the center of the light emitting semiconductor element 2, the bidirectional tendency of the directivity (see FIG. 8) is alleviated by the light condensing function of the interface between the sealing resin 4 and the resin 5, and the front strength is reduced. Can be increased.
【0011】 図3は本考案の他の実施例を示す樹脂封止型発光体の縦断面図である。本樹脂 封止型発光体は、SMD(Surface Mount Device)型であり、めっきによるパタ ーン6を形成した絶縁基板7を有する。絶縁基板7の表面には、発光半導体素子 2をマウントするための凹部7aが設けられている。凹部7a内の発光半導体素 子2は、パターン6に対して金線3によりワイヤボンディングされている。凹部 7a内には、封止用樹脂4よりも屈折率が小さい樹脂5が充填され、その封止用 樹脂4との界面は、凹面とされている。なお、封止用樹脂4は、絶縁基板7の表 面に積層され、中心部が凸レンズ4aとされている。本樹脂封止型発光体におい ても、封止用樹脂4と樹脂5との界面の集光機能により、狭指向性および高正面 強度が実現される。FIG. 3 is a vertical cross-sectional view of a resin-sealed light emitter showing another embodiment of the present invention. This resin-sealed light-emitting body is an SMD (Surface Mount Device) type and has an insulating substrate 7 on which a pattern 6 is formed by plating. A concave portion 7 a for mounting the light emitting semiconductor element 2 is provided on the surface of the insulating substrate 7. The light emitting semiconductor element 2 in the recess 7 a is wire-bonded to the pattern 6 by the gold wire 3. A resin 5 having a smaller refractive index than the sealing resin 4 is filled in the recess 7a, and the interface with the sealing resin 4 is a concave surface. The sealing resin 4 is laminated on the surface of the insulating substrate 7 and has a convex lens 4a at the center. Also in the present resin-sealed light-emitting body, narrow directivity and high front strength are realized by the light-collecting function at the interface between the sealing resin 4 and the resin 5.
【0012】 図4は本考案の更に別の実施例を示す縦断面図である。前述の実施例が封止用 樹脂4の正面の一部をレンズとしているのに対し、本実施例は、封止用樹脂4の 正面全体をレンズとしている。FIG. 4 is a vertical sectional view showing still another embodiment of the present invention. In the embodiment described above, a part of the front surface of the sealing resin 4 is used as a lens, whereas in the present embodiment, the entire front surface of the sealing resin 4 is used as a lens.
【0013】[0013]
以上、本考案にかかる樹脂封止型発光体による場合には、発光半導体素子がマ ウントされた凹部内を、封止用樹脂よりも低屈折率の樹脂により封止し、その樹 脂と前記封止用樹脂との界面を凹面としたことにより、封止用樹脂によるレンズ の入射側に疑似凹レンズが形成され、集光機能が付加されるので、そのレンズ径 が小さくても、発光光量の全量をレンズに入射させることができ、正面強度を更 にあげることができる。また、発光半導体素子の中心に電極が位置する場合でも 、疑似レンズの集光機能により、指向性の2山傾向が緩和され、正面強度の増加 が図られる。従って、狭指向性および高正面強度が実現される。 As described above, in the case of the resin-sealed light emitting device according to the present invention, the inside of the recess in which the light emitting semiconductor element is mounted is sealed with a resin having a lower refractive index than the sealing resin, and the resin and the By making the interface with the sealing resin a concave surface, a pseudo-concave lens is formed on the incident side of the lens by the sealing resin, and a condensing function is added, so even if the lens diameter is small, The entire amount can be made incident on the lens, and the frontal strength can be further increased. Further, even when the electrode is located at the center of the light emitting semiconductor element, the light condensing function of the pseudo lens alleviates the tendency of two directivity peaks and increases the frontal strength. Therefore, narrow directivity and high frontal strength are realized.
【図1】本考案の一実施例を示す樹脂封止型発光体の縦
断面図である。FIG. 1 is a vertical cross-sectional view of a resin-sealed light emitting body showing an embodiment of the present invention.
【図2】図1の樹脂封止型発光体の指向特性を示すグラ
フである。FIG. 2 is a graph showing directional characteristics of the resin-sealed light emitting device of FIG.
【図3】本考案の他の実施例を示す樹脂封止型発光体の
縦断面図である。FIG. 3 is a vertical cross-sectional view of a resin-sealed light emitting body showing another embodiment of the present invention.
【図4】本考案の更に別の実施例を示す縦断面図であ
る。FIG. 4 is a vertical sectional view showing still another embodiment of the present invention.
【図5】従来の樹脂封止型発光体の縦断面図である。FIG. 5 is a vertical sectional view of a conventional resin-sealed light emitting body.
【図6】従来の樹脂封止型発光体の指向特性を示すグラ
フである。FIG. 6 is a graph showing directional characteristics of a conventional resin-sealed light emitting body.
【図7】従来の狭指向性および高正面強度を狙った樹脂
封止型発光体の縦断面図である。FIG. 7 is a vertical sectional view of a conventional resin-sealed light emitting device aiming at narrow directivity and high frontal strength.
【図8】発光半導体素子の中心に電極が位置する場合の
指向性を示すグラフである。FIG. 8 is a graph showing directivity when an electrode is located at the center of a light emitting semiconductor element.
1 リードフレーム 1a 凹部 2 発光半導体素子 4 封止用樹脂 5 凹部内の樹脂 7 絶縁基板 7a 凹部 DESCRIPTION OF SYMBOLS 1 Lead frame 1a Recess 2 Light emitting semiconductor element 4 Resin 5 for encapsulation 7 Resin in recess 7 Insulating substrate 7a Recess
Claims (1)
た樹脂封止型発光体において、前記凹部内を、封止用樹
脂よりも低屈折率の樹脂により封止し、その樹脂と前記
封止用樹脂との界面を、発光半導体素子の側に窪んだ凹
面としたことを特徴とする樹脂封止型発光体。1. A resin-sealed light-emitting body having a light-emitting semiconductor element mounted in a recess, wherein the recess is sealed with a resin having a refractive index lower than that of a sealing resin. A resin-sealed light-emitting body, characterized in that the interface with the resin for use is a concave surface depressed toward the light-emitting semiconductor element side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP010447U JPH0563068U (en) | 1992-01-31 | 1992-01-31 | Resin-sealed light emitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP010447U JPH0563068U (en) | 1992-01-31 | 1992-01-31 | Resin-sealed light emitter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0563068U true JPH0563068U (en) | 1993-08-20 |
Family
ID=11750405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP010447U Pending JPH0563068U (en) | 1992-01-31 | 1992-01-31 | Resin-sealed light emitter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0563068U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088457A (en) * | 1994-06-23 | 1996-01-12 | Nec Corp | Photo coupler |
| JP2003031858A (en) * | 2001-05-15 | 2003-01-31 | Lumileds Lighting Us Llc | Semiconductor LED flip chip with low refractive index filling |
| JP2005159276A (en) * | 2003-10-28 | 2005-06-16 | Matsushita Electric Works Ltd | Semiconductor light emitting device and manufacturing method thereof |
| US7026756B2 (en) | 1996-07-29 | 2006-04-11 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device with blue light LED and phosphor components |
| WO2006095609A1 (en) * | 2005-03-10 | 2006-09-14 | Citizen Electronics Co., Ltd. | Lighting device |
| JP2011522405A (en) * | 2008-05-30 | 2011-07-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optoelectronic modules and optoelectronic devices |
| WO2012008600A1 (en) * | 2010-07-14 | 2012-01-19 | 岩谷産業株式会社 | Led package device |
| JP2014220312A (en) * | 2013-05-07 | 2014-11-20 | 三菱電機株式会社 | Led display device and picture display device |
| JP6297741B1 (en) * | 2017-03-31 | 2018-03-20 | 旭化成エレクトロニクス株式会社 | Optical device and manufacturing method thereof |
-
1992
- 1992-01-31 JP JP010447U patent/JPH0563068U/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088457A (en) * | 1994-06-23 | 1996-01-12 | Nec Corp | Photo coupler |
| US7329988B2 (en) | 1996-07-29 | 2008-02-12 | Nichia Corporation | Light emitting device with blue light LED and phosphor components |
| US9130130B2 (en) | 1996-07-29 | 2015-09-08 | Nichia Corporation | Light emitting device and display comprising a plurality of light emitting components on mount |
| US7026756B2 (en) | 1996-07-29 | 2006-04-11 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device with blue light LED and phosphor components |
| US7071616B2 (en) | 1996-07-29 | 2006-07-04 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device with blue light led and phosphor components |
| US7126274B2 (en) | 1996-07-29 | 2006-10-24 | Nichia Corporation | Light emitting device with blue light LED and phosphor components |
| US7215074B2 (en) | 1996-07-29 | 2007-05-08 | Nichia Corporation | Light emitting device with blue light led and phosphor components |
| US7362048B2 (en) | 1996-07-29 | 2008-04-22 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device with blue light led and phosphor components |
| US7531960B2 (en) | 1996-07-29 | 2009-05-12 | Nichia Corporation | Light emitting device with blue light LED and phosphor components |
| JP2003031858A (en) * | 2001-05-15 | 2003-01-31 | Lumileds Lighting Us Llc | Semiconductor LED flip chip with low refractive index filling |
| JP2005159276A (en) * | 2003-10-28 | 2005-06-16 | Matsushita Electric Works Ltd | Semiconductor light emitting device and manufacturing method thereof |
| WO2006095609A1 (en) * | 2005-03-10 | 2006-09-14 | Citizen Electronics Co., Ltd. | Lighting device |
| JP2011522405A (en) * | 2008-05-30 | 2011-07-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optoelectronic modules and optoelectronic devices |
| JP2012023189A (en) * | 2010-07-14 | 2012-02-02 | Iwatani Internatl Corp | Led package device |
| CN102986045A (en) * | 2010-07-14 | 2013-03-20 | 岩谷产业株式会社 | LED package device |
| WO2012008600A1 (en) * | 2010-07-14 | 2012-01-19 | 岩谷産業株式会社 | Led package device |
| JP2014220312A (en) * | 2013-05-07 | 2014-11-20 | 三菱電機株式会社 | Led display device and picture display device |
| JP6297741B1 (en) * | 2017-03-31 | 2018-03-20 | 旭化成エレクトロニクス株式会社 | Optical device and manufacturing method thereof |
| US10529885B2 (en) | 2017-03-31 | 2020-01-07 | Asahi Kasei Microdevices Corporation | Optical device and method for manufacturing the same |
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