JPH056334B2 - - Google Patents
Info
- Publication number
- JPH056334B2 JPH056334B2 JP20803683A JP20803683A JPH056334B2 JP H056334 B2 JPH056334 B2 JP H056334B2 JP 20803683 A JP20803683 A JP 20803683A JP 20803683 A JP20803683 A JP 20803683A JP H056334 B2 JPH056334 B2 JP H056334B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- composite target
- sputtering
- magnetic thin
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002131 composite material Substances 0.000 claims description 14
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 11
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は主として垂直熱磁気記録方式において
記録媒体として用いられる磁性薄膜の製造方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention mainly relates to a method for manufacturing a magnetic thin film used as a recording medium in a perpendicular thermomagnetic recording system.
垂直熱磁気記録方式とはガラス、セラミツク
ス、プラスチツク等の非磁性体からなる基材上に
磁性薄膜からなる垂直磁化可能な記録媒体を形成
せしめ、該記録媒体表面にレーザ光線を照射して
照射部分をキユリー点近傍、もしくは補償点近傍
に加熱し、この部分を含む該記録媒体領域にバイ
アス磁界をかけることによつてこの部分の磁化を
他の部分とは逆の方向に配向せしめることにより
熱磁気的に情報の書き込みを行い、該情報の読み
出しには別の直線偏向したレーザ光線を該記録媒
体表面にあて、該表面からの反射光を検光子を介
して光学的に検出することによる。即ち該レーザ
光線は情報が書き込まれている該記録媒体位置に
おいてカー効果によつて偏光面が回転するので、
読み出しの際は上記偏光面の回転を検出すること
になる。上記偏光面の回転角度をカー回転角Θk
と言う。 The perpendicular thermomagnetic recording method involves forming a perpendicularly magnetizable recording medium made of a magnetic thin film on a base material made of a non-magnetic material such as glass, ceramics, or plastic, and irradiating the surface of the recording medium with a laser beam to detect the irradiated area. Thermomagnetic In order to read the information, another linearly polarized laser beam is applied to the surface of the recording medium, and the reflected light from the surface is optically detected via an analyzer. That is, since the plane of polarization of the laser beam is rotated by the Kerr effect at the position of the recording medium where information is written,
During readout, the rotation of the plane of polarization is detected. The rotation angle of the above polarization plane is the Kerr rotation angle Θk
Say.
従来から上記記録媒体を構成する磁性薄膜の材
料としてGd−Fe非晶質合金が用いられている。
最近該Gd−Fe非晶質合金に更にBiを添加してGd
−Fe−Bi非晶質合金とするΘkが増大して良好な
SN比が得られることが判明した。該Gd−Fe−
Bi非晶質合金からなる磁性薄膜を形成するには
第1図に示すようにFe基板1上にGd小片2およ
びBi小片3を適宜配置した複合ターゲツト10
を用い、これに荷電してGd−Fe−Bi合金をスパ
ツタリングし基材上にGd−Fe−Bi非晶質合金層
を作製する方法が考えられる。しかしBiの融点
は低く(271.3℃)、該複合ターゲツト10を用い
ればスパツタリング中にBiが溶融してしまつて
所定の組成のGd−Fe−Bi非晶質合金層が得られ
ない。しかしGd−Fe−Bi合金は極めて脆く単独
のターゲツトとして用いることは出来ない。更に
Gd−Fe合金も同様に脆くターゲツトの一要素と
して用いることは出来ない。 Gd--Fe amorphous alloys have conventionally been used as a material for magnetic thin films constituting the recording medium.
Recently, Bi was further added to the Gd-Fe amorphous alloy, and Gd
−Fe−Bi amorphous alloy with increased Θk and good
It was found that the signal-to-noise ratio could be obtained. The Gd-Fe-
To form a magnetic thin film made of a Bi amorphous alloy, as shown in FIG.
A conceivable method is to sputter a Gd-Fe-Bi alloy by sputtering the Gd-Fe-Bi alloy by charging the Gd-Fe-Bi amorphous alloy layer on the base material. However, the melting point of Bi is low (271.3 DEG C.), and if the composite target 10 is used, Bi will melt during sputtering, making it impossible to obtain a Gd--Fe--Bi amorphous alloy layer with a predetermined composition. However, the Gd-Fe-Bi alloy is extremely brittle and cannot be used as a single target. Furthermore
Gd-Fe alloys are similarly brittle and cannot be used as target elements.
本発明は上記従来の問題点を解決することを目
的とし、Gd、Fe、Biからなる複合ターゲツトを
基材上にスパツタリングしてGd−Fe−Bi非晶質
合金からなる磁性薄膜を製造する方法において、
前記複合ターゲツトを、Gd−Bi合金からなる要
素とFeからなる要素との組み合わせ、もしくは
Fe−Bi合金からなる要素とGdからなる要素との
組み合わせによつて構成したことを骨子とするも
のである。 The present invention aims to solve the above conventional problems, and is a method for manufacturing a magnetic thin film made of a Gd-Fe-Bi amorphous alloy by sputtering a composite target made of Gd, Fe, and Bi onto a base material. In,
The composite target is a combination of an element made of Gd-Bi alloy and an element made of Fe, or
The main feature is that it is composed of a combination of an element made of Fe-Bi alloy and an element made of Gd.
本発明においては上記骨子によりGd、Fe、Bi
からなる複合ターゲツトにおいて、その一要素を
Gd−Bi合金もしくはFe−Bi合金とし、これら合
金は融点が高くかつ脆くないから取扱い易く、ま
た融点の低いBi単独要素や脆くて取扱かい困難
なGd−Fe合金要素は全く存在せず、所定の組成
のGd−Fe−Bi非晶質合金からなる磁性薄膜がス
パツタリングによつて容易に得られるのである。 In the present invention, according to the above outline, Gd, Fe, Bi
In a complex target consisting of
Gd-Bi alloy or Fe-Bi alloy is used, and these alloys have a high melting point and are not brittle, so they are easy to handle, and there is no single Bi element with a low melting point or Gd-Fe alloy element, which is brittle and difficult to handle. A magnetic thin film made of a Gd-Fe-Bi amorphous alloy with a composition of 1 can be easily obtained by sputtering.
本発明を以下に詳細に説明する。 The invention will be explained in detail below.
本発明の複合ターゲツトの一実施例を第2図に
示す。該複合ターゲツト20は円板状の基板11
と、該基板11上に配置される小片12の各要素
からなる。そして本発明において各要素は下記の
組成を有する。 An embodiment of the composite target of the present invention is shown in FIG. The composite target 20 includes a disk-shaped substrate 11.
and a small piece 12 arranged on the substrate 11. In the present invention, each element has the following composition.
基板11 小片12
ケース1 Fe Gd−Bi
2 Gd−Bi Fe
3 Gd Fe−Bi
4 Fe−Bi Gd
上記のようにいづれのケースにおいても融点の
低いBi単独要素、あるいは脆いGd−Fe要素は存
在しない。そしてGd−Bi合金は脆くなく融点は
975℃以上であり、Fe−Bi合金もまた脆くなく融
点はほぼFeと同じであり、したがつて本発明に
かかる複合ターゲツト20を第3図に示すように
スパツタリング室21の電極22の背板22A上
に記載しシヤツタ23を介してホルダー24に支
持される基板25と相対させ、通気孔26を介し
てアルゴンガス、ネオンガス等の不活性ガスによ
つて室21内を置換した上で電極22を介して該
複合ターゲツト20に荷電してシヤツタ23を開
けば基材25の表面には所定の組成のGd−Fe−
Bi非晶質合金層がスパツタリングされる。なお
基材25としてはプラスチツク、セラミツクス、
ガラス等の材料が用いられる。 Substrate 11 Small piece 12 Case 1 Fe Gd-Bi 2 Gd-Bi Fe 3 Gd Fe-Bi 4 Fe-Bi Gd As mentioned above, in all cases, there is no Bi element with a low melting point or a brittle Gd-Fe element. . And the Gd-Bi alloy is not brittle and its melting point is
975°C or higher, and the Fe-Bi alloy is also not brittle and has a melting point almost the same as Fe. Therefore, the composite target 20 according to the present invention is used as a back plate of the electrode 22 in the sputtering chamber 21 as shown in FIG. 22A and supported by a holder 24 through a shutter 23, and after replacing the inside of the chamber 21 with an inert gas such as argon gas or neon gas through a ventilation hole 26, the electrode 22 When the composite target 20 is charged and the shutter 23 is opened, Gd-Fe- of a predetermined composition is deposited on the surface of the base material 25.
A Bi amorphous alloy layer is sputtered. Note that the base material 25 may be plastic, ceramics,
Materials such as glass are used.
上記実施例の他、複合ターゲツトにおいて基板
11表面に所定の個数の嵌合孔を設け、該嵌合孔
に小片12を密接すれば基板11上で小片12が
ずれることなく、有利にスパツタリングを行い得
る。 In addition to the above embodiments, if a predetermined number of fitting holes are provided on the surface of the substrate 11 in the composite target and the small pieces 12 are brought into close contact with the fitting holes, sputtering can be advantageously performed without the small pieces 12 shifting on the substrate 11. obtain.
第1図は従来の複合ターゲツトの斜視図、第2
図は本発明の複合ターゲツトの一実施例の斜視
図、第3図はスパツタリング説明図である。
図中、11……基板、12……小片、20……
複合ターゲツト。
Figure 1 is a perspective view of a conventional composite target, Figure 2 is a perspective view of a conventional composite target;
The figure is a perspective view of an embodiment of the composite target of the present invention, and FIG. 3 is an explanatory view of sputtering. In the figure, 11... substrate, 12... small piece, 20...
Composite target.
Claims (1)
上にスパツタリングしてGd−Fe−Bi非晶質合金
からなる磁性薄膜を製造する方法において、前記
複合ターゲツトを、Gd−Bi合金からなる要素と
Feからなる要素との組み合わせ、もしくはFe−
Bi合金からなる要素とGdからなる要素との組み
合わせによつて構成したことを特徴とする磁性薄
膜の製造方法。1. A method for producing a magnetic thin film made of a Gd-Fe-Bi amorphous alloy by sputtering a composite target made of Gd, Fe, and Bi onto a base material, in which the composite target is made of an element made of a Gd-Bi alloy.
Combination with element consisting of Fe or Fe-
1. A method for producing a magnetic thin film, characterized in that it is constructed by a combination of an element made of Bi alloy and an element made of Gd.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20803683A JPS60100418A (en) | 1983-11-04 | 1983-11-04 | Manufacturing method of magnetic thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20803683A JPS60100418A (en) | 1983-11-04 | 1983-11-04 | Manufacturing method of magnetic thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60100418A JPS60100418A (en) | 1985-06-04 |
| JPH056334B2 true JPH056334B2 (en) | 1993-01-26 |
Family
ID=16549590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20803683A Granted JPS60100418A (en) | 1983-11-04 | 1983-11-04 | Manufacturing method of magnetic thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60100418A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6118107A (en) * | 1984-07-04 | 1986-01-27 | Ricoh Co Ltd | Non-crystalline magneto-optical layer |
| JP5162883B2 (en) * | 2005-11-24 | 2013-03-13 | 株式会社リコー | Sputtering target for recording layer formation of optical recording medium, manufacturing method thereof, and manufacturing method of optical recording medium |
-
1983
- 1983-11-04 JP JP20803683A patent/JPS60100418A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60100418A (en) | 1985-06-04 |
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