JPH0563439B2 - - Google Patents

Info

Publication number
JPH0563439B2
JPH0563439B2 JP59179684A JP17968484A JPH0563439B2 JP H0563439 B2 JPH0563439 B2 JP H0563439B2 JP 59179684 A JP59179684 A JP 59179684A JP 17968484 A JP17968484 A JP 17968484A JP H0563439 B2 JPH0563439 B2 JP H0563439B2
Authority
JP
Japan
Prior art keywords
amorphous silicon
single crystal
thin film
silicon
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59179684A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6158879A (ja
Inventor
Hidekazu Okabayashi
Shuichi Saito
Kohei Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59179684A priority Critical patent/JPS6158879A/ja
Publication of JPS6158879A publication Critical patent/JPS6158879A/ja
Publication of JPH0563439B2 publication Critical patent/JPH0563439B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP59179684A 1984-08-29 1984-08-29 シリコン薄膜結晶の製造方法 Granted JPS6158879A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59179684A JPS6158879A (ja) 1984-08-29 1984-08-29 シリコン薄膜結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59179684A JPS6158879A (ja) 1984-08-29 1984-08-29 シリコン薄膜結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS6158879A JPS6158879A (ja) 1986-03-26
JPH0563439B2 true JPH0563439B2 (sr) 1993-09-10

Family

ID=16070060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59179684A Granted JPS6158879A (ja) 1984-08-29 1984-08-29 シリコン薄膜結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS6158879A (sr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2698147B2 (ja) * 1989-02-10 1998-01-19 三洋電機株式会社 Ｓｏｉ構造の形成方法
JP2762097B2 (ja) * 1989-02-20 1998-06-04 三洋電機株式会社 Ｓｏｉ膜の形成方法
JP2762103B2 (ja) * 1989-03-20 1998-06-04 三洋電機株式会社 Ｓｏｉ膜の形成方法
FR2646860B1 (fr) * 1989-05-15 1996-07-19 Sanyo Electric Co Procede pour la formation d'une structure soi
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US5663077A (en) 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
JP3221473B2 (ja) 1994-02-03 2001-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2007329200A (ja) * 2006-06-06 2007-12-20 Toshiba Corp 半導体装置の製造方法
JP2013258188A (ja) * 2012-06-11 2013-12-26 Hitachi Kokusai Electric Inc 基板処理方法と半導体装置の製造方法、および基板処理装置
JP7341052B2 (ja) * 2019-12-26 2023-09-08 東京エレクトロン株式会社 膜形成方法及び膜形成装置

Also Published As

Publication number Publication date
JPS6158879A (ja) 1986-03-26

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