JPH0564224B2 - - Google Patents
Info
- Publication number
- JPH0564224B2 JPH0564224B2 JP60219594A JP21959485A JPH0564224B2 JP H0564224 B2 JPH0564224 B2 JP H0564224B2 JP 60219594 A JP60219594 A JP 60219594A JP 21959485 A JP21959485 A JP 21959485A JP H0564224 B2 JPH0564224 B2 JP H0564224B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- ppm
- weight
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
Landscapes
- Wire Bonding (AREA)
Description
（産業上の利用分野）
本発明は半導体のチツプ電極と外部リード部と
を接続するために使用するタイヤボンデイング用
銅線に関するものである。
（従来の技術とその問題点）
従来、ボンデイング用線としては、Au線及び
Al線等が使用されてきた。
しかしながら、Au線は極めて高価な上に、シ
リコンチツプのAl電極との間に脆い金属間化合
物を形成しやすく、ワイヤーの剥離を起す欠点が
あつた。
一方、Al線はボール形状の不安定やループ形
状の不良及びボンデイング時にキヤピラリーが詰
りやすいため、ボンデイング特性の低下をきたす
という不具合があつた。
（発明が解決しようとする技術的課題）
以上の問題を解決するための本発明の技術的課
題は、低価格であると共にボール形状が安定し、
且つネツク切れ及びシリコン（Si）のチツプ割れ
等を起さない引張強度の強いボンデイング用線を
提供することである。
（技術的課題を達成するための技術的手段）
以上の技術的課題を達成するための本発明の技
術的手段は、99.99wt％以上の高純度無酸素銅に、
第３周期元素中よりマグネシウム（Mg）、アル
ミニウム（Al）、リン（Ｐ）の１種又は２種以上
を３〜40重量ppm含有せしめたことであり、その
添加量が３重量ppm未満だと効果が認められず、
40重量ppmを越えると電気抵抗が増大すると共
に、硬くなつてチツプ割れ等を生ずる。
（発明の効果）
本発明は以上の様な構成にしたことにより、下
記の効果を有する。
低価格のボンデイング用Cu線を提供するこ
とができる。
添加元素のMg，Al，Ｐが銅の脱酸作用をす
るので、ボール作製時における酸化を防止し、
清浄な真球形状が得られ、且つボンデイング作
業中におけるチツプ割れやネツク切れを防止し
て引張強度の向上を図ることが出来る。依つ
て、ボンデイング特性大なるCu線を提供し得
る。
（実施例）
表(1)−ａ〜ｃに示す試料No.１〜130は99.99wt％
以上の高純度無酸素銅（Cu）に、マグネシウム
（Mg）、アルミニウム（Al）、リン（Ｐ）、シリコ
ン（Si）、カルシウム（Ca）の１種又は２種以上
を表中記載量含有せしめたCu合金を溶解鋳造し、
線引加工により直径30μの極細線ボンデイング用
Cu線としたものである。
表(2)−ａ〜ｃに示す試料No.１〜130は99.99wt％
以上の高純度無酸素銅（Cu）に、マグネシウム
（Mg）、アルミニウム（Al）、リン（Ｐ）、シリコ
ン（Si）、カルシウム（Ca）の１種又は２種以上
を表中記載量含有せしめたCu合金を溶解鋳造し、
線引加工により直径30μの極細線ボンデイング用
Cu線としたものである。
ここにいう、高純度無酸素銅とは、99.99％以
上の純度で且つ酸素濃度５重量ppm以下の銅をい
う。各試料の添加元素及び添加量は表中に示す通
りである。
また、比較品は99.99wt％または99.995wt％の
Alに1wt％のSiを含有せしめたAl合金を溶解鋳造
し、線引加工により所定径の極細ボンデイング用
Al線としたものである。
これら各試料及び比較品について、ボール作製
の際のボール形状及びボンデイング時のチツプ割
れ、ネツク切れについて試験を行つた。結果を表
中に示す。
(Industrial Application Field) The present invention relates to a tire bonding copper wire used to connect a semiconductor chip electrode and an external lead portion. (Conventional technology and its problems) Conventionally, Au wire and
Al wire etc. have been used. However, the Au wire is extremely expensive and has the disadvantage that it tends to form brittle intermetallic compounds with the Al electrode of the silicon chip, causing the wire to peel off. On the other hand, Al wire has problems such as unstable ball shape, poor loop shape, and capillary clogging during bonding, resulting in deterioration of bonding characteristics. (Technical Problems to be Solved by the Invention) The technical problems of the present invention to solve the above problems are to achieve low cost, stable ball shape,
Another object of the present invention is to provide a bonding wire with high tensile strength that does not cause neck breakage or silicon (Si) chip cracking. (Technical means for achieving the technical problem) The technical means of the present invention for achieving the above technical problem is to use high purity oxygen-free copper of 99.99wt% or more,
One or more of magnesium (Mg), aluminum (Al), and phosphorus (P) among the third period elements is contained in an amount of 3 to 40 ppm by weight, and if the amount added is less than 3 ppm by weight, No effect was observed,
If it exceeds 40 ppm by weight, the electrical resistance will increase and it will become hard and cause chip cracking. (Effects of the Invention) By having the above configuration, the present invention has the following effects. We can provide low-cost Cu wire for bonding. The additive elements Mg, Al, and P deoxidize copper, preventing oxidation during ball production.
A clean true spherical shape can be obtained, chip cracking and neck breakage can be prevented during bonding work, and tensile strength can be improved. Therefore, it is possible to provide a Cu wire with excellent bonding characteristics. (Example) Samples No. 1 to 130 shown in Table (1)-a to c are 99.99 wt%
The above high-purity oxygen-free copper (Cu) contains one or more of magnesium (Mg), aluminum (Al), phosphorus (P), silicon (Si), and calcium (Ca) in the amounts listed in the table. melted and cast Cu alloy,
For bonding ultra-fine wire with a diameter of 30μ by wire drawing processing
It is made of Cu wire. Sample Nos. 1 to 130 shown in Table (2)-a to c are 99.99wt%
The above high-purity oxygen-free copper (Cu) contains one or more of magnesium (Mg), aluminum (Al), phosphorus (P), silicon (Si), and calcium (Ca) in the amounts listed in the table. melted and cast Cu alloy,
For bonding ultra-fine wire with a diameter of 30μ by wire drawing processing
It is made of Cu wire. The term "high purity oxygen-free copper" as used herein refers to copper with a purity of 99.99% or more and an oxygen concentration of 5 ppm or less by weight. The added elements and amounts of each sample are shown in the table. In addition, the comparison product is 99.99wt% or 99.995wt%
For ultra-fine bonding of a specified diameter by melting and casting an Al alloy containing 1wt% Si and wire-drawing it.
It is made of Al wire. These samples and comparative products were tested for ball shape during ball manufacture, chip cracking during bonding, and neck breakage. The results are shown in the table.
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】【table】
【表】
表(1)、(2)の結果から、99.99wt％以上の高純度
無酸素銅に、Mg，Al，Ｐの１種又は２種以上
を３〜40重量ppm含有せしめた、Ca，Siの何
れか１種とMg，Al，Ｐの１種又は２種以上とを
３〜40重量ppm含有せしめた、Ca及びSiと、
Mg，Al，Ｐの１種又は２種以上とを３〜40重量
ppm含有せしめた各々の本発明実施品が、所望の
効果を奏することを確認できた。[Table] From the results in Tables (1) and (2), it is clear that Ca , Si containing 3 to 40 ppm by weight of one or more of Mg, Al, and P;
3 to 40 weight of one or more of Mg, Al, and P
It was confirmed that each of the products of the present invention containing ppm exhibited the desired effects.
Claims (1)
期元素中よりマグネシウム（Mg）、アルミニウ
ム（Al）、リン（Ｐ）の１種又は２種以上を３〜
40重量ppm含有せしめたことを特徴とする半導体
素子のボンデイング用銅線。 ２ 99.99wt％以上の高純度無酸素銅に、カルシ
ウム（Ca）、シリコン（Si）の何れか１種と、マ
グネシウム（Mg）、アルミニウム（Al）、リン
（Ｐ）の１種又は２種以上とを３〜40重量ppm含
有せしめたことを特徴とする半導体素子のボンデ
イング用銅線。 ３ 99.99wt％以上の高純度無酸素銅に、カルシ
ウム（Ca）及びシリコン（Si）と、マグネシウ
ム（Mg）、アルミニウム（Al）、リン（Ｐ）の１
種又は２種以上を３〜40重量ppm含有せしめたこ
とを特徴とする半導体素子のボンデイング用銅
線。[Claims] 1 99.99wt% or more of high-purity oxygen-free copper containing 3 to 3 or more of one or more of magnesium (Mg), aluminum (Al), and phosphorus (P) from the third period elements.
A copper wire for bonding semiconductor devices, characterized by containing 40 ppm by weight. 2 High purity oxygen-free copper of 99.99wt% or more, one of calcium (Ca), silicon (Si), and one or more of magnesium (Mg), aluminum (Al), and phosphorus (P). A copper wire for bonding a semiconductor device, characterized in that it contains 3 to 40 ppm by weight of 3 High purity oxygen-free copper of 99.99wt% or more, calcium (Ca), silicon (Si), magnesium (Mg), aluminum (Al), phosphorus (P)
A copper wire for bonding a semiconductor device, characterized in that the copper wire contains 3 to 40 ppm by weight of one or more species.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60219594A JPS6280241A (en) | 1985-10-01 | 1985-10-01 | Copper wire for bonding semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60219594A JPS6280241A (en) | 1985-10-01 | 1985-10-01 | Copper wire for bonding semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6280241A JPS6280241A (en) | 1987-04-13 |
| JPH0564224B2 true JPH0564224B2 (en) | 1993-09-14 |
Family
ID=16737979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60219594A Granted JPS6280241A (en) | 1985-10-01 | 1985-10-01 | Copper wire for bonding semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6280241A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01159338A (en) * | 1987-12-15 | 1989-06-22 | Fujikura Ltd | Copper wire rod for extra fine wire |
| US8610291B2 (en) | 2006-08-31 | 2013-12-17 | Nippon Steel & Sumikin Materials Co., Ltd. | Copper alloy bonding wire for semiconductor device |
| JP5109881B2 (en) * | 2008-09-04 | 2012-12-26 | 住友金属鉱山株式会社 | Copper bonding wire |
| JP4482605B1 (en) * | 2009-01-23 | 2010-06-16 | 田中電子工業株式会社 | High purity Cu bonding wire |
| WO2011129256A1 (en) * | 2010-04-14 | 2011-10-20 | タツタ電線株式会社 | Bonding wire |
| KR20150097808A (en) * | 2013-01-11 | 2015-08-26 | 센주긴조쿠고교 가부시키가이샤 | Cu BALL |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5678357U (en) * | 1979-11-09 | 1981-06-25 | ||
| JPS5929093A (en) * | 1982-08-10 | 1984-02-16 | Power Reactor & Nuclear Fuel Dev Corp | How to remove scale |
| JPS59139663A (en) * | 1983-01-31 | 1984-08-10 | Mitsubishi Metal Corp | Cu-alloy fine wire for wire bonding on semiconductor device |
| JPS6120693A (en) * | 1984-07-06 | 1986-01-29 | Toshiba Corp | Bonding wire |
| JPS61163194A (en) * | 1985-01-09 | 1986-07-23 | Toshiba Corp | Bonding wire for semiconductor element |
-
1985
- 1985-10-01 JP JP60219594A patent/JPS6280241A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6280241A (en) | 1987-04-13 |
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