JPH056834A - Formation method of laminated magnetic film - Google Patents
Formation method of laminated magnetic filmInfo
- Publication number
- JPH056834A JPH056834A JP1887891A JP1887891A JPH056834A JP H056834 A JPH056834 A JP H056834A JP 1887891 A JP1887891 A JP 1887891A JP 1887891 A JP1887891 A JP 1887891A JP H056834 A JPH056834 A JP H056834A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- magnetic
- laminated
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000015572 biosynthetic process Effects 0.000 title abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 49
- 239000010409 thin film Substances 0.000 claims abstract description 46
- 150000004767 nitrides Chemical class 0.000 claims abstract description 22
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 14
- 239000000956 alloy Substances 0.000 claims abstract description 14
- 239000002344 surface layer Substances 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 20
- 238000005121 nitriding Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000004907 flux Effects 0.000 abstract description 18
- 239000011162 core material Substances 0.000 abstract description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 53
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 4
- 240000006909 Tilia x europaea Species 0.000 description 4
- 235000011941 Tilia x europaea Nutrition 0.000 description 4
- 239000004571 lime Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- -1 SiO 2 or Al 2 O 3 Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、積層磁性体膜の形成方
法に関し、特に磁気ディスク装置、ＶＴＲ等に用いられ
る磁気ヘッド、磁気ヘッドのコア材料に適した積層磁性
体膜の形成方法に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a laminated magnetic film, and more particularly to a method of forming a laminated magnetic film suitable for a magnetic head used in a magnetic disk device, a VTR or the like and a core material of the magnetic head. .
【０００２】[0002]
【従来の技術および課題】磁気ヘッドは、その記録時に
おける磁気飽和を防止するために高飽和磁束密度を有す
る材料により形成することが必要である。また、ヘッド
の再生効率の面から、低保磁力、高透磁率の特性を有す
る材料から形成することがことも必要である。2. Description of the Related Art A magnetic head must be formed of a material having a high saturation magnetic flux density in order to prevent magnetic saturation during recording. Further, from the viewpoint of reproducing efficiency of the head, it is also necessary to form it from a material having characteristics of low coercive force and high magnetic permeability.
【０００３】高飽和磁束密度を有する磁性材料として
は、鉄が知られている。しかしながら、鉄はスパッタリ
ング、蒸着等の通常の成膜技術を用いて多結晶膜を形成
させた場合には、保磁力が大きく磁気ヘッド材料として
使用することが難しい。Iron is known as a magnetic material having a high saturation magnetic flux density. However, iron has a large coercive force and is difficult to use as a magnetic head material when a polycrystalline film is formed by using a normal film forming technique such as sputtering or vapor deposition.
【０００４】また、Ｆｅの軟磁気特性の改善のためにＦ
ｅを主成分とする合金の開発が進められている。しかし
ながら、これらの合金の中で飽和磁束密度が１．８Ｔ以
上の材料の多くは保磁力が大きく、磁気ヘッド材料とし
ては特性的に十分満足するものではない。Further, in order to improve the soft magnetic properties of Fe, F
Development of alloys containing e as a main component is in progress. However, among these alloys, most of the materials having a saturation magnetic flux density of 1.8 T or more have a large coercive force, and are not sufficiently satisfactory in characteristics as magnetic head materials.
【０００５】このようなことから、軟磁気特性を改善す
る方法としてＦｅと他の化合物、金属とを積層する方法
が試みられている。例えば、Ｆｅ薄膜と積層される薄膜
としてＳｉＯ2 、Ａｌ2 Ｏ3 などの非磁性化合物、Ａ
ｌ、Ａｇ、Ｃｕなどの非磁性金属、Ｃｏ、Ｎｉ、Ｆｅ−
Ｎｉ合金などの磁性金属が用いられている。Under these circumstances, a method of laminating Fe with another compound or a metal has been attempted as a method of improving the soft magnetic characteristics. For example, as a thin film laminated with a Fe thin film, a non-magnetic compound such as SiO 2 or Al 2 O 3 , A
l, Ag, Cu and other non-magnetic metals, Co, Ni, Fe-
A magnetic metal such as a Ni alloy is used.
【０００６】しかしながら、前記薄膜は飽和磁束密度が
磁性金属においてもＦｅの飽和磁束密度以下であるた
め、必然的に積層膜の飽和磁束密度がＦｅよりも低くな
り、保磁力を低下させることができるものの、磁気ヘッ
ド材料としては十分満足するものではない。However, since the saturation magnetic flux density of the thin film is less than that of Fe even in a magnetic metal, the saturation magnetic flux density of the laminated film is inevitably lower than that of Fe and the coercive force can be lowered. However, it is not a satisfactory magnetic head material.
【０００７】[0007]
【発明が解決しようとする課題】本発明は、前記従来の
問題点を解消するためになされたもので、低保磁力、高
透磁率および高飽和磁束密度の特性を有する積層磁性膜
の形成方法を提供しようとするものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and is a method for forming a laminated magnetic film having characteristics of low coercive force, high permeability and high saturation magnetic flux density. Is to provide.
【０００８】[0008]
【課題を解決するための手段】本発明は、Ｆｅ薄膜また
はＦｅを主成分とする合金薄膜を成膜した後に前記薄膜
の表面層を窒化して窒化層を形成する工程とを繰り返す
ことを特徴とする積層磁性体膜の形成方法である。前記
Ｆｅを主成分とする合金としては、例えばＦｅ−Ｃｏ合
金、Ｆｅ−Ｎｉ合金等を挙げることができる。The present invention is characterized in that the steps of forming an Fe thin film or an alloy thin film containing Fe as a main component and then nitriding the surface layer of the thin film to form a nitride layer are repeated. And a method of forming a laminated magnetic film. Examples of the alloy containing Fe as a main component include Fe—Co alloy and Fe—Ni alloy.
【０００９】前記Ｆｅ薄膜またはＦｅを主成分とする合
金薄膜の厚さは、１００〜５００オングストローム
（Ａ）とすることが望ましい。この理由は、前記薄膜の
厚さを１００Ａ未満にすると飽和磁束密度が低下する恐
れがあり、一方前記薄膜の厚さが５００Ａを越えるＦｅ
薄膜等の結晶粒の粗大化などの原因によって保磁力が大
きくなる恐れがある。前記窒化処理としては、低温で窒
化層を形成することが可能なＮ2 プラズマまたはＮ2 イ
オンを前記薄膜表面に照射する方法を用いることが望ま
しい。The thickness of the Fe thin film or the alloy thin film containing Fe as a main component is preferably 100 to 500 angstrom (A). The reason for this is that if the thickness of the thin film is less than 100 A, the saturation magnetic flux density may decrease, while the thickness of the thin film exceeds 500 A Fe.
The coercive force may increase due to the coarsening of crystal grains of a thin film or the like. As the nitriding treatment, it is desirable to use a method of irradiating the surface of the thin film with N 2 plasma or N 2 ions capable of forming a nitride layer at a low temperature.
【００１０】前記窒化層の厚さは、１０〜２００オング
ストローム（Ａ）とすることが望ましい。この理由は、
前記窒化層の厚さを１０Ａ未満にすると保磁力を低くす
る作用を十分達成することが困難となり、一方前記窒化
層の厚さが２００Ａを越えると飽和磁束密度の低下が大
きくなる恐れがある。The thickness of the nitride layer is preferably 10 to 200 Å (A). The reason for this is
If the thickness of the nitride layer is less than 10 A, it becomes difficult to sufficiently achieve the action of lowering the coercive force. On the other hand, if the thickness of the nitride layer exceeds 200 A, the saturation magnetic flux density may be greatly reduced.
【００１１】[0011]
【作用】本発明によれば、Ｆｅ薄膜またはＦｅを主成分
とする合金薄膜を成膜した後に前記薄膜の表面層を窒化
して窒化層を形成する工程を繰り返すことによって、Ｆ
ｅ単体の磁性体膜に比べて飽和磁束密度が高く、かつ低
保持力の軟磁気特性を有し、しかも内部応力が低減され
た積層磁性体膜を形成することができる。According to the present invention, the steps of forming an Fe thin film or an alloy thin film containing Fe as a main component and then nitriding the surface layer of the thin film to form a nitride layer are repeated.
It is possible to form a laminated magnetic film having a high saturation magnetic flux density, a low coercive force, and a soft magnetic characteristic as compared with a magnetic film made of e alone, and having reduced internal stress.
【００１２】すなわち、Ｆｅ窒化物層をＦｅ薄膜または
Ｆｅを主成分とする合金薄膜と共に積層した場合、高飽
和磁束密度で低保磁力の積層磁性体膜を作製することが
可能である。しかしながら、前記Ｆｅ窒化物層をＮ2 ガ
スを使用した反応性スパッタリングや反応性蒸着などの
方法で前記Ｆｅ薄膜またはＦｅを主成分とする合金薄膜
と共に積層した場合、得られた積層磁性体膜の内部応力
が大きくなるため、期待したほどの保磁力の低下が見ら
れないという問題がある。これに対し、本発明のように
成膜したＦｅ薄膜またはＦｅを主成分とする合金薄膜の
表面層を窒化して窒化層を形成することによって、窒化
層の形成に起因する内部応力の増大を防止できる。その
結果、前記薄膜の表面層を窒化して窒化層を形成する工
程を繰り返すことによって、Ｆｅ単体の磁性体膜に比べ
て飽和磁束密度が高く、かつ低保持力の軟磁気特性を有
し、内部応力を低減した積層磁性体膜を形成できる。That is, when the Fe nitride layer is laminated with the Fe thin film or the alloy thin film containing Fe as a main component, it is possible to produce a laminated magnetic film having a high saturation magnetic flux density and a low coercive force. However, when the Fe nitride layer is laminated with the Fe thin film or the alloy thin film containing Fe as a main component by a method such as reactive sputtering or reactive vapor deposition using N 2 gas, the obtained laminated magnetic film is Since the internal stress increases, there is a problem that the expected decrease in coercive force is not observed. On the other hand, by nitriding the surface layer of the Fe thin film or the alloy thin film containing Fe as a main component formed as in the present invention to form a nitride layer, the internal stress due to the formation of the nitride layer is increased. It can be prevented. As a result, by repeating the step of nitriding the surface layer of the thin film to form a nitride layer, the saturation magnetic flux density is higher than that of the magnetic film made of only Fe, and the soft magnetic characteristics have low coercive force, A laminated magnetic film with reduced internal stress can be formed.
【００１３】[0013]
【実施例】以下、本発明の実施例を詳細に説明する。 実施例１EXAMPLES Examples of the present invention will be described in detail below. Example 1
【００１４】まず、コーニング社製７０５９のガラスか
らなる基板上に、Ｆｅターゲットを用い直流マグネトロ
ンスパッタリングによりＦｅ薄膜を成膜した。この時、
Ａｒガス圧は、３×１０-3torr、成膜速度は３Ａ／ｓｅ
ｃとした。つづいて、前記Ｆｅ薄膜にＥＣＲＮ2 プラズ
マを照射してプラズマ窒化を行なった。この時、Ｎ2圧
力は０．５ｍtorr、マイクロ波圧力は４００Ｗとした。
このような処理により厚さ２００ＡのＦｅ薄膜に５０Ａ
のＦｅ窒化層が形成された。次いで、前記操作を繰り返
して全厚さが５０００Ａの積層膜を前記基板上に形成し
た。
比較例１First, an Fe thin film was formed on a substrate made of Corning 7059 glass by DC magnetron sputtering using an Fe target. This time,
Ar gas pressure is 3 × 10 −3 torr, film formation rate is 3 A / se
c. Subsequently, the Fe thin film was irradiated with ECRN 2 plasma for plasma nitriding. At this time, the N 2 pressure was 0.5 mtorr and the microwave pressure was 400 W.
With such a treatment, a Fe thin film with a thickness of 200 A has a thickness of 50 A.
Fe nitride layer was formed. Then, the above operation was repeated to form a laminated film having a total thickness of 5000 A on the substrate. Comparative Example 1
【００１５】実施例１と同様な基板上に、電子銃加熱方
式によりＦｅを真空蒸着した。この時のＦｅの成膜速度
は、３Ａ／ｓｅｃとした。つづいて、電子銃加熱方式に
よりＦｅを真空蒸着すると共に、Ｎ2 ガスを導入する反
応性蒸着によりＦｅ窒化膜を成膜した。この時、Ｎ2 ガ
ス圧力は２×１０-5torr、成膜速度は０．５Ａ／ｓｅｃ
とした。このような処理により厚さ２００ＡのＦｅ薄膜
と５０ＡのＦｅ窒化膜とが形成された。次いで、前記操
作を繰り返して全厚さが５０００Ａの積層膜を前記基板
上に形成した。
比較例２Fe was vacuum-deposited on the same substrate as in Example 1 by the electron gun heating method. The Fe deposition rate at this time was 3 A / sec. Subsequently, Fe was vacuum-deposited by an electron gun heating method, and a Fe nitride film was formed by reactive vapor deposition in which N 2 gas was introduced. At this time, the N 2 gas pressure was 2 × 10 −5 torr and the film formation rate was 0.5 A / sec.
And By such a treatment, a 200 A thick Fe thin film and a 50 A Fe nitride film were formed. Then, the above operation was repeated to form a laminated film having a total thickness of 5000 A on the substrate. Comparative example 2
【００１６】実施例１と同様な直流マグネトロンスパッ
タリングにより基板上に、Ｆｅ薄膜を成膜した。つづい
て、反応性スパッタリングにより前記Ｆｅ薄膜上にＦｅ
窒化膜を成膜した。この時、Ｆｅターゲットを使用し、
Ｎ2 流量／Ａｒ流量の比が０．２のＡｒとＮ2 の混合ガ
スを使用し、その全圧力を３×１０-3torrとした。この
ような処理により厚さ２００ＡのＦｅ薄膜と５０ＡのＦ
ｅ窒化膜とが形成された。次いで、前記操作を繰り返し
て全厚さが５０００Ａの積層膜を前記基板上に形成し
た。An Fe thin film was formed on the substrate by the same DC magnetron sputtering as in Example 1. Then, Fe is deposited on the Fe thin film by reactive sputtering.
A nitride film was formed. At this time, using a Fe target,
A mixed gas of Ar and N 2 having an N 2 flow rate / Ar flow rate ratio of 0.2 was used, and the total pressure thereof was set to 3 × 10 −3 torr. By such treatment, a Fe thin film with a thickness of 200 A and an F thin film with a thickness of 50 A
An e-nitride film was formed. Then, the above operation was repeated to form a laminated film having a total thickness of 5000 A on the substrate.
【００１７】得られた各積層膜について、飽和磁束密
度、保磁力及び膜の応力を測定した。その結果を下記表
１に示す。なお、膜の応力は成膜前後の基板の反りを測
定することにより求めた。
前記表１から明らかなように実施例１により得られた
積層膜は、比較例１、２の積層膜に比べて低残留応力で
低保磁力であることがわかる。
実施例２The saturation magnetic flux density, the coercive force, and the stress of the film were measured for each of the obtained laminated films. The results are shown in Table 1 below. The stress of the film was determined by measuring the warp of the substrate before and after film formation. As is clear from Table 1 above, the laminated film obtained in Example 1 has lower residual stress and lower coercive force than the laminated films of Comparative Examples 1 and 2. Example 2
【００１８】実施例１と同様な方法により下記表２に示
すようにＦｅ薄膜の厚さおよびＦｅ窒化層の厚さを変化
させ、かつ全膜厚が約５０００Ａになるように積層数
（２種の膜を１層として計算）を変化させて１２種の積
層膜を前記ガラス基板上に形成した。By the same method as in Example 1, the thickness of the Fe thin film and the thickness of the Fe nitride layer were changed as shown in Table 2 below, and the number of layers (two types) was set so that the total film thickness was about 5000A. The film of (1) was calculated as one layer, and 12 kinds of laminated films were formed on the glass substrate by changing.
【００１９】得られた各積層膜について、飽和磁束密度
および保磁力を測定した。その結果を下記表２に併記し
た。なお、下記表２のＮｏ１３は、Ｆｅのみからなる膜
である。
The saturation magnetic flux density and the coercive force of each obtained laminated film were measured. The results are also shown in Table 2 below. No. 13 in Table 2 below is a film made of only Fe.
【００２０】前記表２に明らかなようにＮｏ１３のＦｅ
単層膜の保磁力は、１０Ｏｅ以上であるが、Ｆｅ薄膜と
Ｆｅ窒化層を所定の膜厚比で積層することによって、保
磁力は３Ｏｅ以下に低下し、しかも軟磁気特性もＦｅ単
層膜より優れた積層膜を形成できることがわかる。As is apparent from Table 2, No 13 Fe
The coercive force of the single layer film is 10 Oe or more, but the coercive force is reduced to 3 Oe or less by stacking the Fe thin film and the Fe nitride layer at a predetermined film thickness ratio, and the soft magnetic property is also the Fe single layer film. It can be seen that a more excellent laminated film can be formed.
【００２１】しかしながら、Ｆｅ窒化層の厚さが１０Ａ
未満のＮｏ１の積層膜では、飽和磁束密度の増加が見ら
れるが、保磁力の低下が少ない。また、Ｆｅ窒化層の厚
さが２００Ａを越えるＮｏ６の積層膜、Ｆｅ薄膜の厚さ
が１００Ａ未満のＮｏ７の積層膜では、飽和磁束密度の
低が著しく、保磁力の低かも少ない。更に、Ｆｅ薄膜の
厚さが５００Ａを越えるＮｏ１２の積層膜ではＦｅ薄膜
が厚くなり過ぎて積層の効果が低下し、保磁力の低下が
ほとんど見られなくなる。However, the thickness of the Fe nitride layer is 10 A
In the No. 1 laminated film of less than 1, the saturation magnetic flux density is increased, but the coercive force is not significantly decreased. Further, in the No. 6 laminated film in which the Fe nitride layer thickness exceeds 200 A and in the No. 7 laminated film in which the Fe thin film thickness is less than 100 A, the saturation magnetic flux density is remarkably low, and the coercive force is low. Further, in the No. 12 laminated film in which the thickness of the Fe thin film exceeds 500 A, the Fe thin film becomes too thick and the stacking effect is reduced, so that the coercive force is hardly reduced.
【００２２】[0022]
【発明の効果】以上詳述した如く、本発明によれば高飽
和磁束密度、低保磁力の特性を有し、磁気ヘッドのコア
材等に適した積層磁性膜を形成することができる。した
がって、磁気ヘッドの主磁極膜として用いた場合、０．
２μｍ程度の薄膜にしても磁気飽和を起すことなく、磁
極の先端に強い磁束を発生することができ、超高密度磁
気記録を達成することができる。As described above in detail, according to the present invention, it is possible to form a laminated magnetic film having characteristics of high saturation magnetic flux density and low coercive force and suitable for a core material of a magnetic head and the like. Therefore, when used as the main magnetic pole film of the magnetic head,
Even if the thin film has a thickness of about 2 μm, a strong magnetic flux can be generated at the tip of the magnetic pole without causing magnetic saturation, and super high density magnetic recording can be achieved.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 海老沢 孝 東京都港区西新橋１丁目７番２号 株式会 社ライムズ内 (72)発明者 高橋 純三 東京都港区西新橋１丁目７番２号 株式会 社ライムズ内 (72)発明者 佐野 謙一 東京都港区西新橋１丁目７番２号 株式会 社ライムズ内 (72)発明者 宮川 亜夫 東京都港区西新橋１丁目７番２号 株式会 社ライムズ内 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Takashi Ebisawa 1-7-2 Nishi-Shimbashi, Minato-ku, Tokyo Stock market Inside the company limes (72) Inventor Junzo Takahashi 1-7-2 Nishi-Shimbashi, Minato-ku, Tokyo Stock market Inside the company limes (72) Inventor Kenichi Sano 1-7-2 Nishi-Shimbashi, Minato-ku, Tokyo Stock market Inside the company limes (72) Inventor Ao Miyagawa 1-7-2 Nishi-Shimbashi, Minato-ku, Tokyo Stock market Inside the company limes
Claims (4)
薄膜を成膜した後に前記薄膜の表面層を窒化して窒化層
を形成する工程を繰り返すことを特徴とする積層磁性体
膜の形成方法。1. A method of forming a laminated magnetic film, which comprises repeating a step of forming an Fe thin film or an alloy thin film containing Fe as a main component and then nitriding a surface layer of the thin film to form a nitride layer. .
イオンを前記薄膜表面に照射することによりなされるこ
とを特徴とする請求項１記載の積層磁性体膜の形成方
法。2. The nitriding treatment is N 2 plasma or N 2
The method for forming a laminated magnetic film according to claim 1, wherein the method is performed by irradiating the surface of the thin film with ions.
薄膜の厚さは、１００〜５００オングストローム（Ａ）
であることを特徴とする請求項１記載の積層磁性体膜の
形成方法。3. The thickness of the Fe thin film or the alloy thin film containing Fe as a main component is 100 to 500 angstrom (A).
2. The method for forming a laminated magnetic film according to claim 1, wherein
ストローム（Ａ）であることを特徴とする請求項１記載
の積層磁性体膜の形成方法。4. The method for forming a laminated magnetic film according to claim 1, wherein the nitride layer has a thickness of 10 to 200 angstroms (A).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1887891A JPH056834A (en) | 1991-02-12 | 1991-02-12 | Formation method of laminated magnetic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1887891A JPH056834A (en) | 1991-02-12 | 1991-02-12 | Formation method of laminated magnetic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH056834A true JPH056834A (en) | 1993-01-14 |
Family
ID=11983813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1887891A Pending JPH056834A (en) | 1991-02-12 | 1991-02-12 | Formation method of laminated magnetic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH056834A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001052244A1 (en) * | 2000-01-07 | 2001-07-19 | Storage Technology Corporation | Nitrided elements and method of making same |
| WO2004055784A1 (en) * | 2002-12-18 | 2004-07-01 | Fujitsu Limited | Magnetic thin film and magnetic head using the same |
| US7485378B2 (en) * | 2004-03-19 | 2009-02-03 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic thin film head |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61141114A (en) * | 1984-12-14 | 1986-06-28 | Hitachi Ltd | Magnetic film manufacturing method |
| JPH02263416A (en) * | 1988-12-15 | 1990-10-26 | Matsushita Electric Ind Co Ltd | Method for manufacturing soft magnetic alloy film |
-
1991
- 1991-02-12 JP JP1887891A patent/JPH056834A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61141114A (en) * | 1984-12-14 | 1986-06-28 | Hitachi Ltd | Magnetic film manufacturing method |
| JPH02263416A (en) * | 1988-12-15 | 1990-10-26 | Matsushita Electric Ind Co Ltd | Method for manufacturing soft magnetic alloy film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001052244A1 (en) * | 2000-01-07 | 2001-07-19 | Storage Technology Corporation | Nitrided elements and method of making same |
| US6473960B1 (en) | 2000-01-07 | 2002-11-05 | Storage Technology Corporation | Method of making nitrided active elements |
| US6915559B1 (en) | 2000-01-07 | 2005-07-12 | Storage Technology Corporation | Method of manufacturing a read head |
| WO2004055784A1 (en) * | 2002-12-18 | 2004-07-01 | Fujitsu Limited | Magnetic thin film and magnetic head using the same |
| US7485378B2 (en) * | 2004-03-19 | 2009-02-03 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic thin film head |
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