JPH0571559B2 - - Google Patents
Info
- Publication number
- JPH0571559B2 JPH0571559B2 JP6998088A JP6998088A JPH0571559B2 JP H0571559 B2 JPH0571559 B2 JP H0571559B2 JP 6998088 A JP6998088 A JP 6998088A JP 6998088 A JP6998088 A JP 6998088A JP H0571559 B2 JPH0571559 B2 JP H0571559B2
- Authority
- JP
- Japan
- Prior art keywords
- inner container
- container
- heater
- single crystal
- vapor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6998088A JPH01242489A (ja) | 1988-03-23 | 1988-03-23 | 単結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6998088A JPH01242489A (ja) | 1988-03-23 | 1988-03-23 | 単結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01242489A JPH01242489A (ja) | 1989-09-27 |
| JPH0571559B2 true JPH0571559B2 (fr) | 1993-10-07 |
Family
ID=13418320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6998088A Granted JPH01242489A (ja) | 1988-03-23 | 1988-03-23 | 単結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01242489A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020132491A (ja) * | 2019-02-22 | 2020-08-31 | インパクト エスアー | 単結晶成長装置およびiii−v族半導体単結晶の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0261965U (fr) * | 1988-10-27 | 1990-05-09 |
-
1988
- 1988-03-23 JP JP6998088A patent/JPH01242489A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020132491A (ja) * | 2019-02-22 | 2020-08-31 | インパクト エスアー | 単結晶成長装置およびiii−v族半導体単結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01242489A (ja) | 1989-09-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 15 Free format text: PAYMENT UNTIL: 20081007 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 15 Free format text: PAYMENT UNTIL: 20081007 |