JPH0574643A - Manufacture of soft magnetic thin film - Google Patents

Manufacture of soft magnetic thin film

Info

Publication number
JPH0574643A
JPH0574643A JP23454891A JP23454891A JPH0574643A JP H0574643 A JPH0574643 A JP H0574643A JP 23454891 A JP23454891 A JP 23454891A JP 23454891 A JP23454891 A JP 23454891A JP H0574643 A JPH0574643 A JP H0574643A
Authority
JP
Japan
Prior art keywords
thin film
sputtering gas
soft magnetic
flux density
relationship
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP23454891A
Other languages
Japanese (ja)
Inventor
Masayoshi Ishida
昌義 石田
Hideaki Ono
秀昭 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP23454891A priority Critical patent/JPH0574643A/en
Publication of JPH0574643A publication Critical patent/JPH0574643A/en
Withdrawn legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)

Abstract

(57)【要約】 【目的】20kG以上の飽和磁束密度を有し、かつ優れ
た軟磁気特性を有する磁性薄膜を得る。 【構成】Co≦70at%を含有するFe−Co系合金
薄膜をスパッタリング法により基板上に成膜するに際
し、スパッタリングガス圧力P[Pa]が、Co含有量
x[at%]に対して 0.09+x/400 ≦ P ≦ 0.70 …
(1) の関係を満たす。また好ましくは、スパッタリングガス
がArであり、スパッタリングガス圧力P「Pa]が、
Co含有量x[at%]に対して(1)式の関係と次式 0.07+x/200 ≦ P ≦ 0.20+x/2
00 の関係を同時に満たす。
(57) [Summary] [Object] To obtain a magnetic thin film having a saturation magnetic flux density of 20 kG or more and excellent soft magnetic properties. [Structure] When a Fe—Co based alloy thin film containing Co ≦ 70 at% is formed on a substrate by a sputtering method, the sputtering gas pressure P [Pa] is 0. 09 + x / 400 ≤ P ≤ 0.70 ...
The relationship of (1) is satisfied. Further preferably, the sputtering gas is Ar, and the sputtering gas pressure P “Pa” is
The relationship of the formula (1) with respect to the Co content x [at%] and the following formula 0.07 + x / 200 ≤ P ≤ 0.20 + x / 2
The relationship of 00 is satisfied at the same time.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高い飽和磁束密度と良
好な軟磁性を有するFe−Co系合金軟磁性薄膜の製造
方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an Fe--Co alloy soft magnetic thin film having a high saturation magnetic flux density and good soft magnetism.

【0002】[0002]

【従来の技術】近年、電子機器の小型化に伴い、磁気デ
バイスの薄膜化が追求され、高い飽和磁束密度と優れた
軟磁気特性とを同時に満足する薄膜磁性材料が求められ
らている。高い飽和磁束密度を有する軟磁性材料として
は、Fe−35wt%Co付近の組成を有するFe−C
o系合金が既知の金属系磁性材料の中でも最高の飽和磁
束密度を示すことが知られている。しかしながら、この
合金系の薄膜材料においては、軟磁性の点で満足できる
特性を得ることは困難であった。例えば、H.R.Ph
ilipp and J.J.Tiemann:J.A
ppl.Phys.43(1972)3542によれ
ば、Fe−50wt%Co組成の薄膜においては、磁化
は22kGと高い値を示しているが、その保磁力はバル
ク材料に比べて劣悪な20Oe程度の値である。一方、
各種元素添加によりFe−Co系合金薄膜の軟磁性化が
図られているが、例えば、M.Hayakawa et
al.:IEEE Trans.Magn.,MAG
−23(1987)3092に示されているように、飽
和磁束密度がFe−Coの2元系に比べて顕著に減少す
る問題点があった。
2. Description of the Related Art In recent years, with the miniaturization of electronic equipment, the thinning of magnetic devices has been pursued, and there has been a demand for a thin film magnetic material which simultaneously satisfies a high saturation magnetic flux density and excellent soft magnetic characteristics. As a soft magnetic material having a high saturation magnetic flux density, Fe-C having a composition near Fe-35 wt% Co
It is known that the o-based alloy exhibits the highest saturation magnetic flux density among known metal-based magnetic materials. However, it has been difficult to obtain satisfactory properties in terms of soft magnetism in this alloy-based thin film material. For example, H.264. R. Ph
ilipp and J. J. Tiemann: J. A
ppl. Phys. 43 (1972) 3542, the magnetization of the thin film of Fe-50 wt% Co shows a high value of 22 kG, but its coercive force is about 20 Oe, which is worse than that of the bulk material. on the other hand,
Although softening of the Fe-Co alloy thin film has been attempted by adding various elements, for example, M. Hayaka et
al. : IEEE Trans. Magn. , MAG
As described in -23 (1987) 3092, there is a problem that the saturation magnetic flux density is significantly reduced as compared with the Fe-Co binary system.

【0003】[0003]

【発明が解決しようとする課題】本発明は、上記の問題
点に鑑み、20kG以上の高い飽和磁束密度を確保しつ
つ優れた軟磁気特性を賦写したFe−Co系の薄膜軟磁
性材料の製造方法を提案することを目的とする。
In view of the above problems, the present invention provides a thin film soft magnetic material of Fe--Co system which has excellent soft magnetic characteristics while ensuring a high saturation magnetic flux density of 20 kG or more. The purpose is to propose a manufacturing method.

【0004】[0004]

【課題を解決するための手段】上記の目的のため、Fe
−Co系合金薄膜を種々作製し、磁気特性を調査した結
果、Fe−Co系合金をスパッタリング法によって作製
する方法において、スパッタリングガス圧をFe−Co
の組成比に応じて調整することにより、飽和磁束密度を
低下させることなく軟磁気特性を良好にすることができ
ることを知見した。
For the above purpose, Fe
As a result of investigating the magnetic characteristics by preparing various —Co alloy thin films, in the method of preparing the Fe—Co alloy by the sputtering method, the sputtering gas pressure was set to Fe—Co.
It was found that the soft magnetic characteristics can be improved without reducing the saturation magnetic flux density by adjusting according to the composition ratio of.

【0005】即ち、本発明は、Co≦70at%を含有
するFe−Co系合金薄膜をスパッタリング法により基
板上に成膜する方法において、スパッタリングガス圧力
P[Pa]が、Co含有量x[at%]に対して 0.09+x/400 ≦ P ≦ 0.70 …(1) の関係を満たすことを特徴とする軟磁性薄膜の製造方法
であり、また、この方法において、スパッタリングガス
がArであり、スパッタリングガス圧力P[Pa]が、
Co含有量x[at%]に対して上記(1)式の関係と
(2)式 0.07+x/200 ≦ P ≦ 0.20+x/200 …(2) の関係を同時に満たすことを特徴とする軟磁性薄膜の製
造方法である。
That is, according to the present invention, in the method of forming the Fe—Co alloy thin film containing Co ≦ 70 at% on the substrate by the sputtering method, the sputtering gas pressure P [Pa] is the Co content x [at]. %] With respect to 0.09 + x / 400 ≤ P ≤ 0.70 (1), and in this method, the sputtering gas is Ar. , The sputtering gas pressure P [Pa] is
It is characterized in that the relation of the above formula (1) and the relation of the formula (2) 0.07 + x / 200 ≦ P ≦ 0.20 + x / 200 (2) are simultaneously satisfied with respect to the Co content x [at%]. It is a method of manufacturing a soft magnetic thin film.

【0006】[0006]

【作用】以下に、合金素材の成分組成を限定した理由を
説明する。以下、at%を単に%で表示する。FeにC
oを添加すると飽和磁束密度Bsが増大し、前述のよう
に35%Co前後の組成において約24.5kGの最大
値をとり、さらにCo含有量を増加させるとその値は減
少するが、70%以下である場合にはFeを超えるBs
を示す。しかし70%を超える場合にはBsがFeの値
を下回って高飽和磁束密度の目的を達成することができ
ないため、Co含有量は70%以下の範囲とした。
[Function] The reason why the composition of the alloy material is limited will be described below. Hereinafter, at% is simply expressed as%. Fe to C
When o is added, the saturation magnetic flux density Bs increases, and takes a maximum value of about 24.5 kG in the composition around 35% Co as described above, and when the Co content is further increased, the value decreases, but 70% Bs exceeding Fe when:
Indicates. However, when it exceeds 70%, Bs falls below the value of Fe and the purpose of high saturation magnetic flux density cannot be achieved. Therefore, the Co content is set to 70% or less.

【0007】また、Fe−Co系合金薄膜は、電気抵抗
率を増大させて高周波特性を良好にし、また耐食性を向
上させる効果がある、Al,Si,Ti,V,Cr,M
n,Nb,Mo,Ta,Wの一種以上を含有してもよ
い。しかしながら、これ等の元素を合計5%を超えて含
有する場合には飽和磁束密度の低下が著しいために、こ
れらの元素含有量の合計は5%以下とすることが望まし
い。また、Fe及びCoの合計のうち15%までをNi
で置換した場合には、飽和磁束密度を著しく低下させる
ことなく耐食性を付与できるので、上記の範囲内でNi
を含有させることができる。
Further, the Fe-Co alloy thin film has the effects of increasing the electrical resistivity, improving the high frequency characteristics, and improving the corrosion resistance. Al, Si, Ti, V, Cr, M
One or more of n, Nb, Mo, Ta and W may be contained. However, when the total content of these elements exceeds 5%, the saturation magnetic flux density is remarkably lowered, so that the total content of these elements is preferably 5% or less. In addition, up to 15% of the total of Fe and Co is Ni.
In the case of substituting with, the corrosion resistance can be imparted without significantly lowering the saturation magnetic flux density.
Can be included.

【0008】本発明にかかる薄膜の製造方法としては、
直流又は高周波スパッタ法等の成膜法が適合する。スパ
ッタリングガスとしてはAr,Xeその他の不活性ガス
又はそれらの混合ガスであってよい。前記のように、ス
パッタリングガス圧力をCo含有量に応じて調節するこ
とにより、保磁力低下、透磁率増大など、Fe−Co薄
膜の軟磁気特性を向上させることができる。
The thin film manufacturing method according to the present invention includes:
Film forming methods such as direct current or high frequency sputtering are suitable. The sputtering gas may be Ar, Xe, another inert gas, or a mixed gas thereof. As described above, by adjusting the sputtering gas pressure according to the Co content, it is possible to improve the soft magnetic properties of the Fe—Co thin film such as a decrease in coercive force and an increase in magnetic permeability.

【0009】[0009]

【実施例】以下実施例に即して説明する。 〔実施例1〕表1に示す種々の組成比からなるFe−C
o系合金ターゲットを用い、スパッタリングガスとして
Arを用いて直流スパッタリング法によってガラス基板
上に成膜した。Ar圧は、0.12〜1.0Paの範囲
で変化させた。膜厚は基板中心部分で約2000Åとし
た。作製した薄膜試料の基板中心部分から直径約6mm
の試験片を切り出し、直流磁気特性を振動試料型磁力計
を用いて測定した。この測定より求められた保持力およ
び飽和磁束密度を表1中に示す。この測定結果より、ス
パッタリングガス圧力が前述した(1)式の範囲内であ
る場合に保磁力が良好となることが明らかである。
[Examples] Examples will be described below. [Example 1] Fe-C having various composition ratios shown in Table 1
A film was formed on a glass substrate by a direct current sputtering method using an o-based alloy target and Ar as a sputtering gas. The Ar pressure was changed in the range of 0.12 to 1.0 Pa. The film thickness was about 2000Å in the central part of the substrate. About 6 mm in diameter from the center of the substrate of the thin film sample
The test piece of No. 1 was cut out and the DC magnetic characteristics were measured using a vibrating sample magnetometer. Table 1 shows the coercive force and the saturation magnetic flux density obtained from this measurement. From this measurement result, it is clear that the coercive force becomes good when the sputtering gas pressure is within the range of the above-mentioned formula (1).

【0010】[0010]

【表1】 [Table 1]

【0011】〔実施例2〕実施例1のNo.1〜4の組
成からなるFe−Co系合金ターゲットを用いて、直流
スパッタリング法によってガラス基板上に成膜した。ス
パッタリングガスはArとし、Ar圧は0.10〜1.
0Paの範囲とした。膜厚は基板中心部分で約2000
Åとした。作成した薄膜試料の基板中心部分から直径約
6mmの試験片を切り出し、300℃、1hrの熱処理
を真空中で施しこの試験片の直流磁気特性を振動試料型
磁力計を用いて測定した。この測定により求められた保
磁力の値を図1に示す。この測定結果より、スパッタリ
ングガス圧力が前述した(2)式の範囲内にある場合に
保磁力が極めて良好となることが明らかである。
[Embodiment 2] No. 1 of the first embodiment. A Fe-Co alloy target having a composition of 1 to 4 was used to form a film on a glass substrate by a DC sputtering method. The sputtering gas is Ar, and the Ar pressure is 0.10 to 1.
The range was 0 Pa. The film thickness is about 2000 at the center of the substrate.
Å A test piece having a diameter of about 6 mm was cut out from the center of the substrate of the prepared thin film sample, heat-treated at 300 ° C. for 1 hr in vacuum, and the DC magnetic characteristics of the test piece were measured using a vibrating sample magnetometer. The value of the coercive force obtained by this measurement is shown in FIG. From this measurement result, it is apparent that the coercive force becomes extremely good when the sputtering gas pressure is within the range of the above-mentioned formula (2).

【0012】[0012]

【発明の効果】以上に述べたように、本発明の磁性薄膜
は高い飽和磁束密度と優れた磁気特性を同時に有するた
め、これを利用して電子機器用磁気デバイスの小型化、
高性能化を図ることができ、産業上の利益が大きい。
As described above, since the magnetic thin film of the present invention has a high saturation magnetic flux density and excellent magnetic properties at the same time, it can be used to downsize a magnetic device for electronic equipment,
Higher performance can be achieved and industrial profit is great.

【図面の簡単な説明】[Brief description of drawings]

【図1】Co含有量、Ar圧および保磁力の関係を示す
グラフである。
FIG. 1 is a graph showing the relationship between Co content, Ar pressure and coercive force.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 Co≦70at%を含有するFe−Co
系合金薄膜をスパッタリング法により基板上に成膜する
に際し、スパッタリングガス圧力P[Pa]が、Co含
有量x[at%]に対して 0.09+x/400 ≦ P ≦ 0.70 …(1) の関係を満たすことを特徴とする軟磁性薄膜の製造方
法。
1. Fe-Co containing Co ≦ 70 at%.
When a system alloy thin film is formed on a substrate by a sputtering method, the sputtering gas pressure P [Pa] is 0.09 + x / 400 ≤ P ≤ 0.70 with respect to the Co content x [at%] (1) The method of manufacturing a soft magnetic thin film, characterized in that
【請求項2】 請求項1記載の製造方法において、スパ
ッタリングガスがArであり、スパッタリングガス圧力
P「Pa]が、Co含有量x[at%]に対して前記
(1)式の関係と次式 0.07+x/200 ≦ P ≦ 0.20+x/200 の関係を同時に満たすことを特徴とする軟磁性薄膜の製
造方法。
2. The manufacturing method according to claim 1, wherein the sputtering gas is Ar, and the sputtering gas pressure P “Pa” is as follows with respect to the Co content x [at%] and the relationship of the equation (1). A method of manufacturing a soft magnetic thin film, which simultaneously satisfies the relationship of formula 0.07 + x / 200 ≦ P ≦ 0.20 + x / 200.
JP23454891A 1991-09-13 1991-09-13 Manufacture of soft magnetic thin film Withdrawn JPH0574643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23454891A JPH0574643A (en) 1991-09-13 1991-09-13 Manufacture of soft magnetic thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23454891A JPH0574643A (en) 1991-09-13 1991-09-13 Manufacture of soft magnetic thin film

Publications (1)

Publication Number Publication Date
JPH0574643A true JPH0574643A (en) 1993-03-26

Family

ID=16972752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23454891A Withdrawn JPH0574643A (en) 1991-09-13 1991-09-13 Manufacture of soft magnetic thin film

Country Status (1)

Country Link
JP (1) JPH0574643A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007297688A (en) * 2006-05-02 2007-11-15 Sanyo Special Steel Co Ltd FeCo-based target material
JP2008121071A (en) * 2006-11-13 2008-05-29 Sanyo Special Steel Co Ltd Soft magnetic FeCo target material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007297688A (en) * 2006-05-02 2007-11-15 Sanyo Special Steel Co Ltd FeCo-based target material
JP2008121071A (en) * 2006-11-13 2008-05-29 Sanyo Special Steel Co Ltd Soft magnetic FeCo target material

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Effective date: 19981203