JPH0577321B2 - - Google Patents
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- JPH0577321B2 JPH0577321B2 JP63239135A JP23913588A JPH0577321B2 JP H0577321 B2 JPH0577321 B2 JP H0577321B2 JP 63239135 A JP63239135 A JP 63239135A JP 23913588 A JP23913588 A JP 23913588A JP H0577321 B2 JPH0577321 B2 JP H0577321B2
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- resistance
- thin film
- concentration
- alloy
- aluminum
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Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えば薄膜抵抗器、抵抗ネツトワ
ーク、熱印字素子の発熱体、その他に用いられる
電気抵抗材料に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to electrically resistive materials used, for example, in thin film resistors, resistance networks, heating elements of thermal printing elements, and others.
薄膜抵抗器に従来から用いられているニツケ
ル・クロム合金やタンタル化合物等の薄膜抵抗材
料の比抵抗は、セラミツク基板上で0.2ｍΩ・cm
程度と小さく、従つてこれを用いたチツプ抵抗器
等のような小型の抵抗器では高い抵抗値を得るの
が困難であつた。例えばこのようなチツプ抵抗器
の抵抗値の上限は数十ＫΩ〜百ＫΩであつた。
The specific resistance of thin film resistive materials such as nickel-chromium alloys and tantalum compounds conventionally used in thin film resistors is 0.2 mΩ・cm on a ceramic substrate.
Therefore, it has been difficult to obtain a high resistance value with a small resistor such as a chip resistor using this resistor. For example, the upper limit of the resistance value of such a chip resistor is several tens of kilohms to one hundred kilohms.
また、熱印字素子の発熱体のために比抵抗の大
きな薄膜材料が幾つか開発されてはいるが、その
抵抗温度係数は数百ppm／deg以上と著しく大き
く、従つてこれを精密抵抗器に用いることはでき
ない。一例を示せば、Ta−Si−Ｃ系材料では、
比抵抗は4.2ｍΩ・cm程度と比較的大きいものの、
抵抗温度係数が−600ppm／deg程度と著しく大
きい。 In addition, although some thin film materials with high resistivity have been developed for the heating elements of thermal printing elements, their temperature coefficients of resistance are extremely large, at several hundred ppm/deg or more, and therefore it is difficult to use them as precision resistors. It cannot be used. For example, in Ta-Si-C material,
Although the specific resistance is relatively large at around 4.2mΩ・cm,
The temperature coefficient of resistance is extremely large at around -600ppm/deg.
一方、チツプ抵抗器に従来から多用されている
厚膜抵抗材料は、極めて高い抵抗値が容易に得ら
れるものの、信頼性や長期の安定性に乏しく、ま
た抵抗温度係数も大きいため、高精度・高信頼性
を要求される用途には適用できない。例えば、
TaBa系材料やLaB6系材料では、150℃で1000時
間放置による抵抗値変化率は１％程度と比較的大
きく、また抵抗温度係数も150〜250ppm／deg程
度と比較的大きい。 On the other hand, although thick film resistive materials, which have traditionally been widely used in chip resistors, can easily obtain extremely high resistance values, they lack reliability and long-term stability, and have a large resistance temperature coefficient. It cannot be applied to applications that require high reliability. for example,
For TaBa-based materials and LaB 6 -based materials, the rate of change in resistance value when left at 150° C. for 1000 hours is relatively large, about 1%, and the temperature coefficient of resistance is also relatively large, about 150 to 250 ppm/deg.
そこでこの発明は、比抵抗が大きく、しかも抵
抗温度係数が小さく、かつ耐環境性に優れた電気
抵抗材料を提供することを目的とする。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an electrical resistance material that has a large specific resistance, a small temperature coefficient of resistance, and excellent environmental resistance.
この発明の電気抵抗材料は、Cr−Al−Ｂ−Ｏ
系のものであり、アルミニウムを10ないし40原子
％含むクロム・アルミニウム合金にホウ素を30な
いし70原子％添加した三元合金に対して、酸素を
10ないし30原子％添加した組成をしている。
The electrical resistance material of this invention is Cr-Al-B-O
It is a ternary alloy made by adding 30 to 70 at% boron to a chromium-aluminum alloy containing 10 to 40 at% aluminum, and oxygen is added to it.
It has a composition with 10 to 30 atomic percent added.
上記三元合金は、換言すれば、その（クロム、
アルミニウム、ホウ素）の組成比（原子％）が、
第１図に示す三成分組成図におけるＡ６３，７，
３０、Ｂ２７，３，７０、Ｃ１８，１２，７０お
よびＤ４２，２８，３０の４点で囲まれる領域内
にあると言うこともできる。 In other words, the above ternary alloy (chromium,
The composition ratio (atomic %) of aluminum, boron) is
A63,7 in the ternary composition diagram shown in Figure 1,
30, B27, 3, 70, C18, 12, 70, and D42, 28, 30.
ここで、クロム・アルミニウム合金中のアルミ
ニウム濃度を10〜40at（原子）％の範囲に限定し
たのは、アルミニウム濃度が10at％未満では比抵
抗が小さく、また40at％を越えると抵抗温度係数
が著しく負方向に増大すると共に熱処理による電
気的特性の変化も大きくなるからである。 Here, we limited the aluminum concentration in the chromium-aluminum alloy to a range of 10 to 40 at% (atomic)% because when the aluminum concentration is less than 10 at%, the specific resistance is small, and when it exceeds 40 at%, the temperature coefficient of resistance becomes significant. This is because as it increases in the negative direction, the change in electrical characteristics due to heat treatment also increases.
また、三元合金中のホウ素濃度を30〜70at％の
範囲に限定したのは、ホウ素濃度が30at％未満で
は比抵抗が小さく、また70at％を越えると抵抗温
度係数が負方向に大きく増大するからである。 In addition, the reason why the boron concentration in the ternary alloy is limited to a range of 30 to 70 at% is that when the boron concentration is less than 30 at%, the specific resistance is small, and when it exceeds 70 at%, the temperature coefficient of resistance increases significantly in the negative direction. It is from.
また、当該電気抵抗材料中の酸素濃度を10〜
30at％の範囲に限定したのは、酸素濃度が10at％
未満では比抵抗が小さく、また30at％を越えると
抵抗温度係数が負方向に大きく増大するからであ
る。更に、酸素濃度が10at％未満では耐環境性も
悪化する。 In addition, the oxygen concentration in the electrical resistance material is 10~
The range of 30 at% is limited to 10 at% oxygen concentration.
This is because if it is less than 30 at%, the specific resistance is small, and if it exceeds 30 at%, the temperature coefficient of resistance increases greatly in the negative direction. Furthermore, if the oxygen concentration is less than 10 at%, the environmental resistance will also deteriorate.
20at％のアルミニウムを含んだクロム・アルミ
ニウム二元合金ターゲツトの表面にホウ素の粒を
並べて三元系としたターゲツトを用い、酸素を添
加したアルゴンガスによりスパツタリングを行
い、種々の組成のCr−Al−Ｂ−Ｏ系電気抵抗材
料の薄膜をセラミツク基板上に堆積させた。この
薄膜におけるクロム・アルミニウム合金に対する
ホウ素の濃度はクロム・アルミニウム二元合金タ
ーゲツトの表面に並べるホウ素の量を変えること
により、また、クロムとアルミニウムとの組成比
は20at％のアルミニウムを含んだクロム・アルミ
ニウム二元合金ターゲツトの表面にクロムあるい
はアルミニウムを追加することにより、更に、
Cr−Al−Ｂ三元合金に対する酸素濃度はアルゴ
ンガスに添加する酸素の濃度を変化させることに
より調整した。このCr−Al−Ｂ−Ｏ系薄膜電気
抵抗材料の電気的特性と耐環境性を図面に基づい
て説明する。
Using a ternary system target with boron grains arranged on the surface of a chromium-aluminum binary alloy target containing 20at% aluminum, sputtering was performed with oxygen-added argon gas to create Cr-Al- of various compositions. A thin film of B--O based electrically resistive material was deposited on a ceramic substrate. The concentration of boron relative to the chromium-aluminum alloy in this thin film can be adjusted by changing the amount of boron arranged on the surface of the chromium-aluminum binary alloy target. By adding chromium or aluminum to the surface of the aluminum binary alloy target,
The oxygen concentration for the Cr-Al-B ternary alloy was adjusted by changing the concentration of oxygen added to the argon gas. The electrical characteristics and environmental resistance of this Cr-Al-B-O based thin film electrical resistance material will be explained based on the drawings.
第２図は、セラミツク基板上に堆積させて薄膜
化したCr−Al−Ｂ−Ｏ系電気抵抗材料における
電気的特性の三元合金中のホウ素濃度依存性の一
例を示す図であり、このときのCr−Al合金中の
アルミニウム濃度は20at％、薄膜中の酸素濃度は
15〜30at％であつた。 FIG. 2 is a diagram showing an example of the dependence of the electrical properties on the boron concentration in the ternary alloy in a Cr-Al-B-O based electrical resistance material deposited on a ceramic substrate to form a thin film. The aluminum concentration in the Cr-Al alloy is 20 at%, and the oxygen concentration in the thin film is
It was 15-30at%.
この図から分かるように、当該Cr−Al−Ｂ−
Ｏ系薄膜は、およそ20at％のホウ素が添加される
ことにより、その比抵抗が減少すると共に抵抗温
度係数（TCR）の絶対値が急減する。しかし、
20〜30at％以上のホウ素濃度域では、ホウ素濃度
の増加に伴い比抵抗が著しく（例えば従来のNi
−Cr合金の一桁以上に）増大するものの、70at
％程度までは抵抗温度係数の絶対値にあまり大き
な変化は生じなく電気抵抗材料として実用的な値
を示す。 As can be seen from this figure, the Cr-Al-B-
When approximately 20 at % of boron is added to an O-based thin film, its specific resistance decreases and the absolute value of its temperature coefficient of resistance (TCR) sharply decreases. but,
In the boron concentration range of 20 to 30 at% or more, the resistivity increases significantly as the boron concentration increases (for example, conventional Ni
- 70 at
%, the absolute value of the temperature coefficient of resistance does not change much and shows a practical value as an electrical resistance material.
更に、これらの薄膜に数百℃での安定化熱処理
（第３図および第４図の熱処理も同様）を施すと、
比抵抗は若干減少するものの、抵抗温度係数の絶
対値は半減し、より高精度の抵抗材料として使用
し得る特性が得られることが分かる。 Furthermore, when these thin films are subjected to stabilization heat treatment at several hundred degrees Celsius (same as the heat treatment shown in Figures 3 and 4),
Although the specific resistance decreases slightly, the absolute value of the temperature coefficient of resistance is halved, indicating that characteristics that can be used as a resistor material with higher precision are obtained.
尚、上記の20〜30at％以上のホウ素濃度域にお
ける薄膜の構造は、Ｘ線回折によれば非晶質化し
ているものと認められ、このような非晶質構造を
維持することが、上記のような優れた電気的特性
を維持する上で好ましいと言える。 In addition, the structure of the thin film in the boron concentration range of 20 to 30 at% or more is recognized to be amorphous according to X-ray diffraction, and it is necessary to maintain such an amorphous structure by the above-mentioned method. This can be said to be preferable in terms of maintaining excellent electrical characteristics such as.
第３図は、セラミツク基板上に堆積させて薄膜
化したCr−Al−Ｂ−Ｏ系電気抵抗材料における
電気的特性のCr−Al合金中のアルミニウム濃度
依存性の一例を示す図であり、このときのCr−
Al合金に対するホウ素濃度は45at％、薄膜中の
酸素濃度は10〜30at％であつた。 FIG. 3 is a diagram showing an example of the dependence of the electrical properties of a Cr-Al-B-O based electrical resistance material deposited on a ceramic substrate into a thin film on the aluminum concentration in the Cr-Al alloy. Cr-
The boron concentration relative to the Al alloy was 45 at%, and the oxygen concentration in the thin film was 10 to 30 at%.
この図から分かるように、当該Cr−Al−Ｂ−
Ｏ系薄膜は、Cr−Al合金中のアルミニウム濃度
が10at％未満では比抵抗が小さく、また40at％を
越えると抵抗温度係数（TCR）が負方向に増大
し熱処理での電気的特性の変化も大きくなる。従
つて、当該アルミニウム濃度は、10〜40at％の範
囲内にするのが好ましい。 As can be seen from this figure, the Cr-Al-B-
O-based thin films have a low specific resistance when the aluminum concentration in the Cr-Al alloy is less than 10 at%, and when it exceeds 40 at%, the temperature coefficient of resistance (TCR) increases in a negative direction and the electrical characteristics change during heat treatment. growing. Therefore, the aluminum concentration is preferably within the range of 10 to 40 at%.
第４図は、セラミツク基板上に堆積させて薄膜
化したCr−Al−Ｂ−Ｏ系電気抵抗材料における
電気的特性の酸素濃度依存性の一例を示す図であ
り、このときの20at％Al−Cr合金に対するホウ
素濃度は55at％であつた。 FIG. 4 is a diagram showing an example of the oxygen concentration dependence of the electrical properties of a Cr-Al-B-O based electrical resistance material deposited on a ceramic substrate to form a thin film. The boron concentration relative to the Cr alloy was 55 at%.
この図から分かるように、当該Cr−Al−Ｂ−
Ｏ系薄膜は、酸素濃度が10at％未満では比抵抗が
小さく、また30at％越えると抵抗温度係数
（TCR）が負方向に大きく増大して、厚膜抵抗材
料と同様の電気的特性を示す。従つて、当該酸素
濃度は、10〜30at％の範囲内にするのが好まし
い。 As can be seen from this figure, the Cr-Al-B-
The O-based thin film has a low specific resistance when the oxygen concentration is less than 10 at%, and when it exceeds 30 at%, the temperature coefficient of resistance (TCR) increases significantly in the negative direction, and exhibits electrical characteristics similar to those of thick film resistive materials. Therefore, the oxygen concentration is preferably within the range of 10 to 30 at%.
第５図は、セラミツク基板上に堆積させて薄膜
化したCr−Al−Ｂ−Ｏ系電気抵抗材料における
電気的特性の耐環境性の一例を示す図であり、こ
のときの20at％Al−Cr合金に対するホウ素濃度
は55at％、薄膜中の酸素濃度は約20at％であつ
た。 FIG. 5 is a diagram showing an example of the environmental resistance of the electrical characteristics of a Cr-Al-B-O based electrical resistance material deposited on a ceramic substrate to form a thin film. The boron concentration in the alloy was 55 at%, and the oxygen concentration in the thin film was about 20 at%.
尚、用いた試片はセラミツク基板上の薄膜表面
が露出したものであり、耐湿性は純水中での煮
沸、また耐酸化性は150℃の空気中での放置によ
る電気抵抗の変化により評価した。ちなみに、こ
の純水煮沸試験は、一般的な抵抗器の評価に適用
される湿中負荷試験（60℃、95％RH、定格負
荷）に比べて４桁以上厳しい試験になる。 The sample used was a thin film surface exposed on a ceramic substrate, and moisture resistance was evaluated by boiling in pure water, and oxidation resistance was evaluated by changes in electrical resistance when left in air at 150°C. did. By the way, this pure water boiling test is four orders of magnitude more severe than the humidity load test (60°C, 95% RH, rated load) that is used to evaluate general resistors.
この図から分かるように、当該Cr−Al−Ｂ−
Ｏ系薄膜は、耐湿・耐酸化性のどちらも時間の経
過と共に電気抵抗が増大するものの、その変化率
は極めて小さく、従つて高安定の抵抗材料である
ことが分かる。 As can be seen from this figure, the Cr-Al-B-
It can be seen that although the electrical resistance of the O-based thin film increases over time in both moisture resistance and oxidation resistance, the rate of change is extremely small, and therefore it is a highly stable resistance material.
第６図は、第５図と同様に耐酸化性と耐湿性と
を調べ、これらの耐環境性に酸素濃度が及ぼす影
響を示したものであり、このときのCr−Al合金
中のアルミニウム濃度は20at％、Cr−Al−Ｂ合
金中のホウ素濃度は41at％であつた。この図か
ら、酸素濃度が減少すると耐環境性が悪化するこ
とが分かる。なお、耐酸化性の150℃での放置時
間を300時間としたのは、第５図で分かるように
抵抗値変化率がほぼ飽和するからである。また耐
湿性の基準とした１時間の純水煮沸は、一般に行
われている湿中負荷試験の10000時間以上に相当
する。 Figure 6 shows the influence of oxygen concentration on these environmental resistances by examining oxidation resistance and moisture resistance in the same way as Figure 5, and the aluminum concentration in the Cr-Al alloy at this time. was 20 at%, and the boron concentration in the Cr-Al-B alloy was 41 at%. From this figure, it can be seen that as the oxygen concentration decreases, the environmental resistance deteriorates. The reason why the oxidation resistance was allowed to stand at 150° C. for 300 hours is because, as can be seen in FIG. 5, the rate of change in resistance value is almost saturated. In addition, one hour of pure water boiling, which is the standard for humidity resistance, is equivalent to more than 10,000 hours of a commonly performed humidity load test.
このような結果と、前述した従来の厚膜抵抗材
料の耐環境性（即ち150℃の1000時間放置で抵抗
値変化率が約１％）を考えると、酸素濃度が10at
％に満たない場合には本発明による材料も従来の
厚膜抵抗材料の特性に近づき、高精度・高信頼性
を要求される用途に適用できないことは容易に類
推できる。 Considering these results and the environmental resistance of the conventional thick film resistor materials mentioned above (i.e., the resistance value change rate is approximately 1% after being left at 150°C for 1000 hours), it is assumed that the oxygen concentration is 10at.
%, it can be easily inferred that the material according to the present invention approaches the characteristics of conventional thick film resistor materials and cannot be applied to applications requiring high precision and high reliability.
尚、上記実施例では、Cr−Al−Ｂ−Ｏ系電気
抵抗材料を薄膜化して作製するのに、制御の比較
的簡単なスパツタリングを用いたが、真空蒸着等
の他の薄膜形成手段を用いても良い。 In the above example, sputtering, which is relatively easy to control, was used to form a thin film of the Cr-Al-B-O based electrical resistance material, but other thin film forming means such as vacuum evaporation could also be used. It's okay.
また、上記実施例では、薄膜を堆積させる基板
にセラミツク基板を用いたが、ガラス基板や表面
に電気絶縁層を設けた金属板等の他の電気絶縁性
基板を用いても良い。ガラス基板を用いれば、周
知のように、比抵抗はセラミツク基板の場合の約
半分になる。 Furthermore, in the above embodiments, a ceramic substrate is used as the substrate on which the thin film is deposited, but other electrically insulating substrates such as a glass substrate or a metal plate provided with an electrically insulating layer on the surface may be used. As is well known, if a glass substrate is used, the specific resistance will be approximately half that of a ceramic substrate.
また、当該Cr−Al−Ｂ−Ｏ系電気抵抗材料は、
上記のように電気絶縁性基板上に薄膜化するよう
にすれば比較的簡単に作製することができるが、
勿論必要に応じて、厚膜化したりバルクとして用
いることも可能である。 In addition, the Cr-Al-B-O based electrical resistance material is
Although it can be produced relatively easily by forming a thin film on an electrically insulating substrate as described above,
Of course, if necessary, it is also possible to make the film thicker or use it as a bulk material.
以上のようにこの発明によれば、比抵抗が大き
く、しかも抵抗温度係数が小さく、かつ耐環境性
に優れた電気抵抗材料が得られる。その場合、当
該電気抵抗材料の構造が非晶質である方が、上記
のような優れた電気的特性を維持する上で好まし
い。
As described above, according to the present invention, an electrical resistance material having a large specific resistance, a small temperature coefficient of resistance, and excellent environmental resistance can be obtained. In this case, it is preferable that the electric resistance material has an amorphous structure in order to maintain the above-mentioned excellent electric properties.
従つて当該電気抵抗材料を用いれば、例えば、
抵抗値が高くかつ高精度・高信頼性のチツプ抵抗
器や高集積抵抗ネツトワーク等の実現が可能にな
る。 Therefore, if the electrical resistance material is used, for example,
It becomes possible to realize chip resistors with high resistance values, high precision, and high reliability, as well as highly integrated resistor networks.
より具体例を示せば、表面実装部品等として用
いられる薄膜チツプ抵抗器の抵抗値の上限が従来
は数十ＫΩ〜百ＫΩ程度であつたものを、当該電
気抵抗材料を用いれば、これを一桁程度増大させ
ることが可能になる。 To give a more specific example, the upper limit of the resistance value of a thin film chip resistor used as a surface mount component, etc., was conventionally about several tens of kilohms to a hundred kilohms, but by using the electrical resistance material, this can be reduced to one. It becomes possible to increase the number of orders of magnitude.
また、従来は厚膜抵抗材料を用いていたため精
度・信頼性の点で劣つていた百ＫΩ程度以上の抵
抗値のチツプ抵抗器も、当該電気抵抗材料を用い
れば、高精度でかつ信頼性の高いものとすること
ができる。 In addition, chip resistors with a resistance value of about 100KΩ or more, which conventionally used thick film resistance materials and were inferior in terms of accuracy and reliability, can be made with high precision and reliability by using this electrical resistance material. It can be made to have a high value.
第１図は、この発明に係る電気抵抗材料におけ
る三元合金の組成比を示す三成分組成図である。
第２図は、セラミツク基板上に堆積させて薄膜化
したCr−Al−Ｂ−Ｏ系電気抵抗材料における電
気的特性の三元合金中のホウ素濃度依存性の一例
を示す図である。第３図は、セラミツク基板上に
堆積させて薄膜化したCr−Al−Ｂ−Ｏ系電気抵
抗材料における電気的特性のCr−Al合金中のア
ルミニウム濃度依存性の一例を示す図である。第
４図は、セラミツク基板上に堆積させて薄膜化し
たCr−Al−Ｂ−Ｏ系電気抵抗材料における電気
的特性の酸素濃度依存性の一例を示す図である。
第５図は、セラミツク基板上に堆積させて薄膜化
したCr−Bl−Ｂ−Ｏ系電気抵抗材料における電
気的特性の耐環境性の一例を示す図である。第６
図は、セラミツク基板上に堆積させて薄膜化した
Cr−Al−Ｂ−Ｏ系電気抵抗材料において、電気
的特性の耐環境性と酸素濃度との関係の一例を示
す図である。
FIG. 1 is a ternary composition diagram showing the composition ratio of the ternary alloy in the electrical resistance material according to the present invention.
FIG. 2 is a diagram showing an example of the dependence of the electrical properties on the boron concentration in the ternary alloy in a Cr--Al--B--O based electrical resistance material deposited on a ceramic substrate to form a thin film. FIG. 3 is a diagram showing an example of the dependence of the electrical properties on the aluminum concentration in the Cr-Al alloy in a Cr-Al-B-O based electrical resistance material deposited on a ceramic substrate to form a thin film. FIG. 4 is a diagram showing an example of the dependence of electrical characteristics on oxygen concentration in a Cr--Al--B--O based electrical resistance material deposited on a ceramic substrate to form a thin film.
FIG. 5 is a diagram showing an example of the environmental resistance of the electrical characteristics of a Cr--Bl--B--O based electrical resistance material deposited on a ceramic substrate to form a thin film. 6th
The figure shows a thin film deposited on a ceramic substrate.
FIG. 2 is a diagram showing an example of the relationship between environmental resistance of electrical properties and oxygen concentration in a Cr-Al-B-O based electrical resistance material.
Claims (1)
ム・アルミニウム合金にホウ素を30ないし70原子
％添加した三元合金に対して、酸素を10ないし30
原子％添加した組成の電気抵抗材料。 ２ 当該材料の構造が非晶質である請求項１記載
の電気抵抗材料。[Claims] 1. A ternary alloy in which 30 to 70 atomic percent of boron is added to a chromium-aluminum alloy containing 10 to 40 atomic percent of aluminum, and 10 to 30 atomic percent of oxygen.
Electrical resistance material with a composition containing atomic percent. 2. The electrical resistance material according to claim 1, wherein the structure of the material is amorphous.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63239135A JPH0287501A (en) | 1988-09-24 | 1988-09-24 | Electric resistance material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63239135A JPH0287501A (en) | 1988-09-24 | 1988-09-24 | Electric resistance material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0287501A JPH0287501A (en) | 1990-03-28 |
| JPH0577321B2 true JPH0577321B2 (en) | 1993-10-26 |
Family
ID=17040294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63239135A Granted JPH0287501A (en) | 1988-09-24 | 1988-09-24 | Electric resistance material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0287501A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2782288B2 (en) * | 1991-06-19 | 1998-07-30 | 進工業株式会社 | Electric resistance material |
| JP6708538B2 (en) * | 2016-12-02 | 2020-06-10 | 公益財団法人電磁材料研究所 | Thin film alloy for strain sensors with excellent thermal stability |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62109301A (en) * | 1985-11-08 | 1987-05-20 | 株式会社日立製作所 | Heat sensitive recording head |
| JPS62165302A (en) * | 1986-01-16 | 1987-07-21 | 進工業株式会社 | High resistance material |
-
1988
- 1988-09-24 JP JP63239135A patent/JPH0287501A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0287501A (en) | 1990-03-28 |
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