JPH0580158B2 - - Google Patents

Info

Publication number
JPH0580158B2
JPH0580158B2 JP58182728A JP18272883A JPH0580158B2 JP H0580158 B2 JPH0580158 B2 JP H0580158B2 JP 58182728 A JP58182728 A JP 58182728A JP 18272883 A JP18272883 A JP 18272883A JP H0580158 B2 JPH0580158 B2 JP H0580158B2
Authority
JP
Japan
Prior art keywords
conductivity type
diffusion region
gate
type
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58182728A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6074678A (ja
Inventor
Shigenori Yakushiji
Susumu Yasaka
Tsukasa Hatsutori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58182728A priority Critical patent/JPS6074678A/ja
Publication of JPS6074678A publication Critical patent/JPS6074678A/ja
Publication of JPH0580158B2 publication Critical patent/JPH0580158B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP58182728A 1983-09-30 1983-09-30 半導体装置 Granted JPS6074678A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58182728A JPS6074678A (ja) 1983-09-30 1983-09-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58182728A JPS6074678A (ja) 1983-09-30 1983-09-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS6074678A JPS6074678A (ja) 1985-04-26
JPH0580158B2 true JPH0580158B2 (2) 1993-11-08

Family

ID=16123401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58182728A Granted JPS6074678A (ja) 1983-09-30 1983-09-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS6074678A (2)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62122272A (ja) * 1985-11-22 1987-06-03 Toshiba Corp 半導体装置
JPH0758776B2 (ja) * 1986-08-22 1995-06-21 株式会社日立製作所 複合半導体装置
JPS6384067A (ja) * 1986-09-27 1988-04-14 Toshiba Corp 半導体装置の製造方法
JPS63181376A (ja) * 1987-01-23 1988-07-26 Toshiba Corp 半導体装置
JPS63182861A (ja) * 1987-01-26 1988-07-28 Toshiba Corp ゼロクロス型サイリスタ
JP2656731B2 (ja) * 1994-08-05 1997-09-24 株式会社日立製作所 複合半導体装置
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58105572A (ja) * 1981-12-18 1983-06-23 Sanken Electric Co Ltd ゼロクロス光サイリスタ

Also Published As

Publication number Publication date
JPS6074678A (ja) 1985-04-26

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