JPH0581073B2 - - Google Patents

Info

Publication number
JPH0581073B2
JPH0581073B2 JP60181901A JP18190185A JPH0581073B2 JP H0581073 B2 JPH0581073 B2 JP H0581073B2 JP 60181901 A JP60181901 A JP 60181901A JP 18190185 A JP18190185 A JP 18190185A JP H0581073 B2 JPH0581073 B2 JP H0581073B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
guard ring
base region
zener diode
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60181901A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6243184A (ja
Inventor
Shuzo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP60181901A priority Critical patent/JPS6243184A/ja
Publication of JPS6243184A publication Critical patent/JPS6243184A/ja
Publication of JPH0581073B2 publication Critical patent/JPH0581073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/20Breakdown diodes, e.g. avalanche diodes
    • H10D8/25Zener diodes 

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP60181901A 1985-08-21 1985-08-21 低雑音型ツエナ−ダイオ−ド Granted JPS6243184A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60181901A JPS6243184A (ja) 1985-08-21 1985-08-21 低雑音型ツエナ−ダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60181901A JPS6243184A (ja) 1985-08-21 1985-08-21 低雑音型ツエナ−ダイオ−ド

Publications (2)

Publication Number Publication Date
JPS6243184A JPS6243184A (ja) 1987-02-25
JPH0581073B2 true JPH0581073B2 (2) 1993-11-11

Family

ID=16108863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60181901A Granted JPS6243184A (ja) 1985-08-21 1985-08-21 低雑音型ツエナ−ダイオ−ド

Country Status (1)

Country Link
JP (1) JPS6243184A (2)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2666743B2 (ja) * 1994-11-22 1997-10-22 日本電気株式会社 定電圧ダイオード

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437591A (en) * 1977-08-30 1979-03-20 Nec Corp Zener diode

Also Published As

Publication number Publication date
JPS6243184A (ja) 1987-02-25

Similar Documents

Publication Publication Date Title
JP4500891B1 (ja) Pinダイオード
US12125924B2 (en) Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing method thereof
JPH07283405A (ja) 半導体装置の保護回路
JP2000049360A (ja) 半導体装置
US4617583A (en) Gate turn-off thyristor
JPH0766975B2 (ja) 複合型ダイオード装置
KR920002088B1 (ko) 게이트 턴 오프 다이리스터(gate turn-off thyristor)
JPH0581073B2 (2)
US3519898A (en) High power semiconductor device having a plurality of emitter regions
JP3623687B2 (ja) ショットキバリアダイオード及びその製造方法
US20040012034A1 (en) Planar diac
JPH0465552B2 (2)
JPH0195568A (ja) 半導体装置
JP2002246610A (ja) 半導体素子
JP2937099B2 (ja) 2方向性2端子サイリスタ
US3906545A (en) Thyristor structure
JP2002237605A (ja) 半導体素子
JPS6364060B2 (2)
JP2002246611A (ja) 半導体素子
JPS63260078A (ja) 過電圧自己保護型サイリスタ
US3624464A (en) Peripheral gate scr with annular ballast segment for more uniform turn on
JP2802970B2 (ja) プレ−ナ型二端子双方向性サイリスタ
JPH0412673Y2 (2)
JP2754947B2 (ja) 半導体装置
JPS6115376A (ja) 基準電圧ダイオ−ド