JPS6243184A - 低雑音型ツエナ−ダイオ−ド - Google Patents

低雑音型ツエナ−ダイオ−ド

Info

Publication number
JPS6243184A
JPS6243184A JP60181901A JP18190185A JPS6243184A JP S6243184 A JPS6243184 A JP S6243184A JP 60181901 A JP60181901 A JP 60181901A JP 18190185 A JP18190185 A JP 18190185A JP S6243184 A JPS6243184 A JP S6243184A
Authority
JP
Japan
Prior art keywords
base region
current
semiconductor substrate
breakdown
guard ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60181901A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0581073B2 (2
Inventor
Shuzo Ito
伊藤　修三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP60181901A priority Critical patent/JPS6243184A/ja
Publication of JPS6243184A publication Critical patent/JPS6243184A/ja
Publication of JPH0581073B2 publication Critical patent/JPH0581073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP60181901A 1985-08-21 1985-08-21 低雑音型ツエナ−ダイオ−ド Granted JPS6243184A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60181901A JPS6243184A (ja) 1985-08-21 1985-08-21 低雑音型ツエナ−ダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60181901A JPS6243184A (ja) 1985-08-21 1985-08-21 低雑音型ツエナ−ダイオ−ド

Publications (2)

Publication Number Publication Date
JPS6243184A true JPS6243184A (ja) 1987-02-25
JPH0581073B2 JPH0581073B2 (2) 1993-11-11

Family

ID=16108863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60181901A Granted JPS6243184A (ja) 1985-08-21 1985-08-21 低雑音型ツエナ−ダイオ−ド

Country Status (1)

Country Link
JP (1) JPS6243184A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612568A (en) * 1994-11-22 1997-03-18 Nec Corporation Low-noise zener diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437591A (en) * 1977-08-30 1979-03-20 Nec Corp Zener diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437591A (en) * 1977-08-30 1979-03-20 Nec Corp Zener diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612568A (en) * 1994-11-22 1997-03-18 Nec Corporation Low-noise zener diode

Also Published As

Publication number Publication date
JPH0581073B2 (2) 1993-11-11

Similar Documents

Publication Publication Date Title
US4484206A (en) Zener diode with protective PN junction portions
JPH07283405A (ja) 半導体装置の保護回路
US12125924B2 (en) Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing method thereof
US4617583A (en) Gate turn-off thyristor
JPH08505984A (ja) 半導体装置用の螺旋状不活性縁構造
US4500900A (en) Emitter ballast resistor configuration
JPS6243184A (ja) 低雑音型ツエナ−ダイオ−ド
KR100491851B1 (ko) 반도체장치 및 그 제조방법
JPH0465552B2 (2)
JPH0195568A (ja) 半導体装置
JPH0677472A (ja) サージ防護素子
JPH0770742B2 (ja) 半導体装置
JP2002246610A (ja) 半導体素子
JP2937099B2 (ja) ２方向性２端子サイリスタ
JPS6364060B2 (2)
JPS63260078A (ja) 過電圧自己保護型サイリスタ
JPH0281468A (ja) 入力保護回路
US3624464A (en) Peripheral gate scr with annular ballast segment for more uniform turn on
JPS6115376A (ja) 基準電圧ダイオ−ド
JPH04350974A (ja) 半導体装置
JPH09307000A (ja) 半導体装置
JPH05152585A (ja) 定電圧ダイオード
JPH0462964A (ja) 半導体集積回路
JP3155870B2 (ja) 過電圧自己保護型半導体装置
JPS5910071B2 (ja) 半導体制御整流素子